公开(公告)号：US12094686B2

公开(公告)日：2024-09-17

申请号：US18188255

申请日：2023-03-22

申请人： ASM IP HOLDING B.V.

发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC分类号： H01L21/311 ,  C23F1/12 ,  C23G5/00 ,  H01J37/32 ,  H01L21/3213

CPC分类号： H01J37/32009 ,  C23F1/12 ,  C23G5/00 ,  H01L21/31116 ,  H01L21/32135

摘要： Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

公开(公告)号：US20240222135A1

公开(公告)日：2024-07-04

申请号：US18398598

申请日：2023-12-28

申请人： ASM IP Holding B.V.

发明人： Daniele Chiappe ,  Viraj Madhiwala ,  Eva E. Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Vincent Vandalon ,  Anirudhan Chandrasekaran

IPC分类号： H01L21/3205 ,  H01L21/02 ,  H01L21/3213

CPC分类号： H01L21/32051 ,  H01L21/02068 ,  H01L21/02118 ,  H01L21/32135

摘要： Methods for forming selective passivation layers on a dielectric surface relative to a metallic surface employing a chalcogenide layer are disclosed. Methods for utilizing selective passivation layers for depositing target films as also disclosed. Exemplary structures that include selective passivation layers are further disclosed.

公开(公告)号：US20240213033A1

公开(公告)日：2024-06-27

申请号：US18544516

申请日：2023-12-19

申请人： ASM IP Holding B.V.

发明人： YongGyu Han ,  Marko Tuominen ,  Shaoren Deng ,  Vincent Vandalon ,  Kranthi Kumar Vaidyula ,  Nadadur Veeraraghavan Srinath

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/027 ,  H01L21/67

CPC分类号： H01L21/31144 ,  H01J37/32899 ,  H01L21/0271 ,  H01L21/31116 ,  H01L21/67069 ,  H01J2237/3341

摘要： The current disclosure relates to methods and assemblies for selectively etching a material from a first surface of a substrate relative to a second surface of the same substrate. The second surface of the substrate is covered by an organic polymer layer and the first surface is etched by a reactive species generated from NF3-containing plasma. The current disclosure further relates to semiconductor structures and devices formed by using the methods or assemblies of the disclosure.

公开(公告)号：US20230374671A1

公开(公告)日：2023-11-23

申请号：US18357856

申请日：2023-07-24

申请人： ASM IP HOLDING B.V.

发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC分类号： C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

CPC分类号： C23F4/02 ,  C23F1/12 ,  H01L21/32135 ,  C09K13/00 ,  H01L21/31122 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138

摘要： Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US11776807B2

公开(公告)日：2023-10-03

申请号：US17451912

申请日：2021-10-22

申请人： ASM IP HOLDING B.V.

发明人： Lingyun Jia ,  Viljami J. Pore ,  Marko Tuominen ,  Sun Ja Kim ,  Oreste Madia

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/3065 ,  C23C16/30

CPC分类号： H01L21/02274 ,  C23C16/30 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4554 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02216 ,  H01L21/3065

摘要： Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.

公开(公告)号：US20230178371A1

公开(公告)日：2023-06-08

申请号：US18061260

申请日：2022-12-02

申请人： ASM IP Holding, B.V.

发明人： Shaoren Deng ,  David Kurt De Roest ,  Marko Tuominen

IPC分类号： H01L21/033 ,  H01L21/3213

CPC分类号： H01L21/0337 ,  H01L21/0332 ,  H01L21/32139 ,  C23C16/45529

摘要： The disclosure relates to methods of depositing an etch-stop layer on a patterned hard mask is disclosed. The method comprises providing a substrate comprising the patterned hard mask in a reaction chamber, selectively depositing passivation material on the first material; and selectively depositing an etch-stop layer on the on the second material. The patterned hard mask comprises a first material and a second material, and the second material forms partially the surface of the substrate. The disclosure further relates to a semiconductor structure, to a device and to a deposition assembly.

公开(公告)号：US11654454B2

公开(公告)日：2023-05-23

申请号：US17820180

申请日：2022-08-16

申请人： ASM IP HOLDING B.V.

发明人： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC分类号： C23C16/455 ,  H01L51/00 ,  B05D1/00

CPC分类号： B05D1/60 ,  C23C16/45525 ,  H01L51/001

摘要： Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

公开(公告)号：US20220235460A1

公开(公告)日：2022-07-28

申请号：US17580832

申请日：2022-01-21

申请人： ASM IP Holding B.V.

发明人： Marko Tuominen ,  Viljami Pore

IPC分类号： C23C16/458 ,  C23C16/509 ,  C23C16/517 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56

摘要： Systems for depositing materials and related methods are described. The systems allow condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.

公开(公告)号：US20220084817A1

公开(公告)日：2022-03-17

申请号：US17472981

申请日：2021-09-13

申请人： ASM IP Holding B.V.

发明人： Varun Sharma ,  Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Charles Dezelah ,  Michael Givens ,  Tom Blomberg

IPC分类号： H01L21/02

摘要： The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

公开(公告)号：US11094535B2

公开(公告)日：2021-08-17

申请号：US15892728

申请日：2018-02-09

申请人： ASM IP HOLDING B.V.

发明人： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/56 ,  H01L21/67 ,  H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/32 ,  H01L21/027 ,  H01L21/321 ,  H01L21/3105

摘要： Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.