公开(公告)号：US11342453B2

公开(公告)日：2022-05-24

申请号：US16996010

申请日：2020-08-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yanping Shen ,  Haiting Wang ,  Zhiqing Li

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/423

Abstract: Disclosed is a lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a replacement metal gate (RMG) structure that includes a first section, which traverses a semiconductor body at a channel region in a first-type well, and a second section, which is adjacent to the first section and which traverses the semiconductor body at a drain drift region in a second-type well. The RMG structure includes, in both sections, a first-type work function layer and a second-type work function layer on the first-type work function layer. However, the thickness of the first-type work function layer in the first section is greater than the thickness in the second section such that the RMG structure is asymmetric. Thus, threshold voltage (Vt) at the first section is greater than Vt at the second section and the LDMOSFET has a relatively high breakdown voltage (BV). Also disclosed are methods for forming the LDMOSFET.

公开(公告)号：US20220146748A1

公开(公告)日：2022-05-12

申请号：US17094105

申请日：2020-11-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/125 ,  G02B6/122 ,  G02B6/28 ,  G02B6/02

Abstract: Structures with waveguide cores in multiple levels and methods of fabricating a structure that includes waveguide cores in multiple levels. The structure includes a first waveguide core and a second waveguide core positioned in a different level than the first waveguide core. The first waveguide core includes a longitudinal axis and a plurality of segments having a spaced arrangement along the longitudinal axis. The second waveguide core is aligned to extend across the plurality of segments of the first waveguide core.

公开(公告)号：US11322639B2

公开(公告)日：2022-05-03

申请号：US16844606

申请日：2020-04-09

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mark D. Levy ,  Siva P. Adusumilli ,  John J. Ellis-Monaghan ,  Vibhor Jain ,  Ramsey Hazbun ,  Pernell Dongmo ,  Cameron E. Luce ,  Steven M. Shank ,  Rajendran Krishnasamy

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0376

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an avalanche photodiode and methods of manufacture. The structure includes: a substrate material having a trench with sidewalls and a bottom composed of the substrate material; a first semiconductor material lining the sidewalls and the bottom of the trench; a photosensitive semiconductor material provided on the first semiconductor material; and a third semiconductor material provided on the photosensitive semiconductor material.

公开(公告)号：US11322414B2

公开(公告)日：2022-05-03

申请号：US16720084

申请日：2019-12-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Shesh Mani Pandey

IPC: H01L21/8249 ,  H01L27/06 ,  H01L29/08 ,  H01L21/74 ,  H01L29/10 ,  H01L21/265 ,  H01L21/266

Abstract: Bipolar junction transistors include a collector, a base on the collector, and an emitter on the base. The base is between the collector and the emitter. The emitter comprises first portions and a second portion on the base. The first portions of the emitter are between the second portion of the emitter and the base. The first portions and the second portion comprise doped areas that are doped with the same polarity impurity in different concentrations. The base comprises a doped area that is doped with an opposite polarity impurity from the first and second portions of the emitter. The first portions of the emitter extend from the second portion of the emitter into the base. Specifically, the second portion has a bottom surface contacting the base, and the first portions comprise at least two separate impurity regions extending from the bottom surface of the second portion into the base.

公开(公告)号：US11322200B1

公开(公告)日：2022-05-03

申请号：US17120325

申请日：2020-12-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vivek Raj ,  Shivraj G. Dharne ,  Uttam K. Saha ,  Mahbub Rashed

IPC: G11C11/419 ,  G11C11/418 ,  G11C11/412

Abstract: A single-rail memory circuit includes an array of memory cells arranged in rows and columns and peripheral circuitry connected to the array for facilitating read and write operations with respect to selected memory cells. The peripheral circuitry includes, but is not limited to, boost circuits for the rows. Each boost circuit is connected to a wordline for a row and to a discrete voltage supply line for the same row. Each boost circuit for a row is configured to increase the voltage levels on the wordline and the voltage supply line for the row during a read of any selected memory cell within the row. Increasing the voltage levels on the wordline and on the voltage supply line during the read operation effectively boosts the read current. A method of operating the memory circuit reduces the probability of a read fail.

公开(公告)号：US20220131369A1

公开(公告)日：2022-04-28

申请号：US17082182

申请日：2020-10-28

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Alain F. Loiseau ,  Robert J. Gauthier, JR. ,  Souvick Mitra ,  You Li ,  Meng Miao ,  Wei Liang

IPC: H02H9/04 ,  H01L27/02

Abstract: Embodiments of the disclosure provide a circuit structure and method to control electrostatic discharge (ESD) events in a resistor-capacitor (RC) circuit. Circuit structures according to the disclosure may include a trigger transistor coupled in parallel with the RC circuit, and a gate terminal coupled to part of the RC circuit. A mirror transistor coupled in parallel with the RC circuit transmits a current that is less than a current through the trigger transistor. A snapback device has a gate terminal coupled to a source or drain of the mirror transistor, and a pair of anode/cathode terminals coupled in parallel with the RC circuit. A current at the gate terminal of the snapback device, derived from current in the mirror transistor, controls an anode/cathode current flow in the snapback device.

公开(公告)号：US20220128762A1

公开(公告)日：2022-04-28

申请号：US17082291

申请日：2020-10-28

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ryan W. Sporer ,  Karen A. Nummy

IPC: G02B6/122

Abstract: Structures and methods implement an enlarged waveguide. The structure may include a semiconductor-on-insulator (SOI) substrate including a semiconductor-on-insulator (SOI) layer over a buried insulator layer over a semiconductor substrate. An inter-level dielectric (ILD) layer is over the SOI substrate. A first waveguide has a lower surface extending at least partially into the buried insulator layer, which allows vertical enlargement of the waveguide, without increasing the thickness of the ILD layer or increasing the length of interconnects to other devices. The enlarged waveguide may include nitride, and can be implemented with other conventional silicon and nitride waveguides.

公开(公告)号：US11316064B2

公开(公告)日：2022-04-26

申请号：US16887375

申请日：2020-05-29

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. Adusumilli ,  John J. Ellis-Monaghan ,  Mark D. Levy ,  Vibhor Jain ,  Andre Sturm

IPC: H01L31/107 ,  H01L31/105 ,  H01L31/036 ,  H01L31/028 ,  H01L31/0312

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one fin including substrate material, the at least one fin including sidewalls and a top surface; a trench on opposing sides of the at least one fin; a first semiconductor material lining the sidewalls and the top surface of the at least one fin, and a bottom surface of the trench; a photosensitive semiconductor material on the first semiconductor material and at least partially filling the trench; and a third semiconductor material on the photosensitive semiconductor material.

公开(公告)号：US20220115549A1

公开(公告)日：2022-04-14

申请号：US17065862

申请日：2020-10-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Rajendran KRISHNASAMY ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Ramsey HAZBUN

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/103 ,  H01L31/18

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photodiode with an integrated, light focusing elements and methods of manufacture. The structure includes: a trench photodiode comprising a domed structure; and a doped material on the domed structure, the doped material having a concave underside surface.

公开(公告)号：US20220113060A1

公开(公告)日：2022-04-14

申请号：US17556762

申请日：2021-12-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Thomas Huang

IPC: F24H1/00

Abstract: One illustrative energy recovery system disclosed herein includes a facility and a closed chilled water loop including a chilled water stream delivered to the facility and a returning water stream that is received from the facility. In this example, the system also includes a primary heat exchanger having a first fluid side and a second fluid side, the first fluid side is adapted to receive supply water and the second fluid side is adapted to receive at least a portion of the returning return water stream. The primary heat exchanger is adapted to effectuate heat transfer between the supply water flowing in the first fluid side and the returning water stream flowing in the second fluid side.