公开(公告)号：US20110247734A1

公开(公告)日：2011-10-13

申请号：US13141099

申请日：2009-12-28

Applicant: Jae-Seung Lee ,  Sang-Yoon Lee ,  Hoe-Young Jung ,  Byoung-Ju Park

Inventor： Jae-Seung Lee ,  Sang-Yoon Lee ,  Hoe-Young Jung ,  Byoung-Ju Park

IPC: C21D6/00 ,  C22C38/04 ,  C22C38/06 ,  C22C38/48 ,  C22C38/14 ,  C22C38/42 ,  C22C38/46 ,  C22C38/02 ,  C22C38/12

CPC classification number: C22C38/02 ,  C22C38/32 ,  C22C38/54

Abstract: Decarburization-restrained steel and manufacturing method thereof are disclosed. Steel includes a boron (B)-concentrated layer formed on its surface to prevent carbon of the steel from being in contact with oxygen in atmosphere to thus restrain decarburization of the steel. The steel includes a boron-concentrated layer with a thickness of 3 mm or larger formed on the surface of the steel. The method of manufacturing decarburization-restrained steel includes cooling steel containing 0.001 wt % to 0.02 wt % of boron (B) at a cooling speed of 0.5° C./s to 25° C./s at an austenite+ferrite two-phase region.

Abstract translation: 脱碳钢抑制钢及其制造方法。 钢包括在其表面上形成的硼（B） - 富集层，以防止钢中的碳与大气中的氧接触，从而抑制钢的脱碳。 该钢包含形成在钢表面上的厚度为3mm以上的硼浓缩层。 制造脱碳抑制钢的方法包括：以奥氏体+铁素体相的0.5℃/秒〜25℃/秒的冷却速度含有0.001重量％〜0.02重量％的硼（B）的冷却钢 地区。

公开(公告)号：US20110233539A1

公开(公告)日：2011-09-29

申请号：US13064466

申请日：2011-03-28

Applicant: Jong-Baek Seon ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Sang-Yoon Lee ,  Bon-Won Koo

Inventor： Jong-Baek Seon ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Sang-Yoon Lee ,  Bon-Won Koo

IPC: H01L29/02 ,  H01L21/20 ,  B32B9/00 ,  B32B7/02

CPC classification number: H01L29/12 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24975

Abstract: Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

Abstract translation: 氧化物薄膜，包括氧化物薄膜的电子器件和制造氧化物薄膜的方法，包括（A）应用包含锌（Zn），铟（In）和锡（Sn）中的至少一种的氧化物前体溶液的方法， （B）对氧化物前体溶液进行热处理以形成氧化物层，（C）重复步骤（A）和（B）以形成多个氧化物层。

公开(公告)号：US08017245B2

公开(公告)日：2011-09-13

申请号：US11128309

申请日：2005-05-13

Applicant: Sang Yoon Lee ,  Jong Jin Park ,  Yi Yeol Lyu ,  Bon Won Koo ,  Young Hun Byun ,  Eun Mi Seo

Inventor： Sang Yoon Lee ,  Jong Jin Park ,  Yi Yeol Lyu ,  Bon Won Koo ,  Young Hun Byun ,  Eun Mi Seo

IPC: H01L23/29

CPC classification number: H01L21/02126 ,  C08G77/04 ,  C08K5/057 ,  C08K5/56 ,  C08L83/04 ,  C09D183/06 ,  H01B3/18 ,  H01L21/02172 ,  H01L21/02186 ,  H01L21/02282 ,  H01L21/3122 ,  H01L51/0052 ,  H01L51/0537 ,  Y10T428/31504 ,  Y10T428/31663 ,  C08L2666/02

Abstract: A composition for preparing an organic insulator, the composition comprising (i) at least one organic-inorganic hybrid material; (ii) at least one organometallic compound and/or organic polymer; and (iii) at least one solvent for dissolving the above two components, so that an organic insulator using the same has a low threshold voltage and driving voltage, and high charge carrier mobility and Ion/Ioff ratio, thereby enhancing insulator characteristics. Further, the preparation of organic insulating film can be carried out by wet process, so that simplification of the process and cut of cost are achieved.

Abstract translation: 一种用于制备有机绝缘体的组合物，所述组合物包含（i）至少一种有机 - 无机混合材料; （ii）至少一种有机金属化合物和/或有机聚合物; 和（iii）用于溶解上述两种组分的至少一种溶剂，使得使用该溶剂的有机绝缘体具有低阈值电压和驱动电压，以及高的载流子迁移率和离子/离子比，从而提高绝缘体特性。 此外，有机绝缘膜的制备可以通过湿法进行，从而实现了工艺的简化和成本的削减。

公开(公告)号：US20110175064A1

公开(公告)日：2011-07-21

申请号：US12656225

申请日：2010-01-21

Applicant: Do-Hwan Kim ,  Sang-Yoon Lee ,  Kwanghee Lee ,  Sung Heum Park ,  Shinuk Cho ,  Jae-kwan Lee ,  Alan J. Heeger

Inventor： Do-Hwan Kim ,  Sang-Yoon Lee ,  Kwanghee Lee ,  Sung Heum Park ,  Shinuk Cho ,  Jae-kwan Lee ,  Alan J. Heeger

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5036 ,  H01L27/3209 ,  H01L51/50 ,  H01L51/5048 ,  H01L51/5203 ,  H01L51/56

Abstract: A light emitting device may include a first electrode on a substrate, a first emission layer on the first electrode, a buffer layer on the first emission layer, a middle electrode on the buffer layer, a second emission layer on the middle electrode, and a second electrode on the second emission layer. The buffer layer may include a material selected from the group consisting of a metal oxide, a polyelectrolyte, and a combination thereof. The first emission layer, buffer layer, middle electrode, and second emission layer may be fabricated using a wet process.

Abstract translation: 发光装置可以包括基板上的第一电极，第一电极上的第一发射层，第一发射层上的缓冲层，缓冲层上的中间电极，中间电极上的第二发射层，以及 第二电极在第二发射层上。 缓冲层可以包括选自金属氧化物，聚电解质及其组合的材料。 可以使用湿法制造第一发射层，缓冲层，中间电极和第二发射层。

公开(公告)号：US20110104617A1

公开(公告)日：2011-05-05

申请号：US12929151

申请日：2011-01-04

Applicant: Jin Young Kim ,  Soon Taik Hwang ,  Young Hun Byun ,  Euk Che Hwang ,  Sang Yoon Lee

Inventor： Jin Young Kim ,  Soon Taik Hwang ,  Young Hun Byun ,  Euk Che Hwang ,  Sang Yoon Lee

IPC: G03F7/20

CPC classification number: G03F7/0043 ,  G03F7/0042

Abstract: An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01˜10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness, and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.

Abstract translation: 含有含Ag的有机金属化合物（I），含有Au，Pd或Ru的有机金属化合物（II）和含有Ti，Ta，Cr，Mo，Ru，Ni，Pd，Cu的有机金属化合物（III）的有机金属组合物 ，Au或Al，其中有机金属化合物（II）和（III）的金属组分分别以有机金属化合物（I）中的Ag的量为0.01〜10摩尔％，和 使用其形成金属合金图案的方法。 可以通过简化的制造工艺获得银合金图案，该图案具有增强的耐热性，粘合性和化学稳定性。 该方法可以应用于制造用于LCD和用于柔性显示器或平板显示器的LCD和金属布线（栅极，源极，漏极）的反射膜，并且还可用于制造无CMP的镶嵌加工和无PR的ITO膜沉积。

公开(公告)号：US20110089409A1

公开(公告)日：2011-04-21

申请号：US12926951

申请日：2010-12-20

Applicant: Jong Il Park ,  Kook Min Han ,  Sang Yoon Lee ,  Eun Jeong Jeong

Inventor： Jong Il Park ,  Kook Min Han ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC: H01L51/30 ,  H01L51/46 ,  C08F228/06

CPC classification number: C08G61/123 ,  C08G61/124 ,  C08G61/125 ,  C08G61/126 ,  H01L51/0043 ,  H01L51/0545 ,  Y02E10/549

Abstract: Disclosed herein are an alternating copolymer of phenylene vinylene and biarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and biarylene vinylene.

Abstract translation: 本文公开了亚苯基亚乙烯基和双亚乙烯基亚乙烯基的交替共聚物，其制备方法和包括其的有机薄膜晶体管。 有机薄膜晶体管由于其有机活性层由亚苯基亚乙烯基和亚乙烯基亚乙烯基的交替共聚物形成，因此保持低截止漏电流并实现高导通/截止电流比和高电荷迁移率。

公开(公告)号：US07915610B2

公开(公告)日：2011-03-29

申请号：US12615315

申请日：2009-11-10

Applicant: Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/10

CPC classification number: H01L29/7869

Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near the surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

Abstract translation: 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US07906206B2

公开(公告)日：2011-03-15

申请号：US11204102

申请日：2005-08-16

Applicant: Jong Jin Park ,  Hyun Jung Park ,  Bon Won Koo ,  Sang Yoon Lee ,  Lyong Sun Pu ,  Kakimoto Masaaki

Inventor： Jong Jin Park ,  Hyun Jung Park ,  Bon Won Koo ,  Sang Yoon Lee ,  Lyong Sun Pu ,  Kakimoto Masaaki

IPC: B32B5/16 ,  C08K5/00 ,  H01L51/30

CPC classification number: H01L21/02118 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02282 ,  H01L21/31691 ,  H01L51/0537 ,  Y10T428/25

Abstract: An organic insulator composition comprising a high dielectric constant insulator dispersed in a hyperbranched polymer and an organic thin film transistor using the insulator composition. More specifically, the organic thin film transistor comprises a substrate, a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an organic semiconductor layer wherein the gate insulating layer is made of the organic insulator composition. The use of the insulator composition in the formation of a gate insulating layer allows the gate insulating layer to be uniformly formed by spin coating at room temperature, as well as enables fabrication of an organic thin film transistor simultaneously satisfying the requirements of high charge carrier mobility and low threshold voltage.

Abstract translation: 一种有机绝缘体组合物，其包含分散在超支化聚合物中的高介电常数绝缘体和使用该绝缘体组合物的有机薄膜晶体管。 更具体地，有机薄膜晶体管包括基板，栅电极，栅极绝缘层，源电极，漏电极和有机半导体层，其中栅绝缘层由有机绝缘体组合物制成。 在形成栅极绝缘层中使用绝缘体组合物允许在室温下通过旋涂均匀地形成栅极绝缘层，并且能够制造同时满足高电荷载流子迁移率要求的有机薄膜晶体管 和低阈值电压。

公开(公告)号：US07884358B2

公开(公告)日：2011-02-08

申请号：US11806742

申请日：2007-06-04

Applicant: Eun Jeong Jeong ,  Hyun Sik Moon ,  Jeong Il Park ,  Sang Yoon Lee

Inventor： Eun Jeong Jeong ,  Hyun Sik Moon ,  Jeong Il Park ,  Sang Yoon Lee

IPC: H01L35/24

CPC classification number: H01L51/0056 ,  C07D495/04 ,  C07F7/0812 ,  H01L51/0058 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

Abstract: Disclosed are a novel aromatic enediyne derivative, an organic semiconductor thin film using the same, and an electronic device. Example embodiments pertain to an aromatic enediyne derivative which enables the formation of a chemically and electrically stable and reliable semiconductor thin film using a solution process, e.g., spin coating and/or spin casting, at about room temperature when applied to devices, an organic semiconductor thin film using the same, and an electronic device including the organic semiconductor thin film. A thin film having a relatively large area may be formed through a solution process, therefore simplifying the manufacturing process and decreasing the manufacturing cost. Moreover, it is possible to provide an organic semiconductor that may be effectively applied to various fields including organic thin film transistors, electroluminescent devices, solar cells, and memory.

公开(公告)号：US07884356B2

公开(公告)日：2011-02-08

申请号：US11394085

申请日：2006-03-31

Applicant: Jong-Jin Park ,  Myeong-Suk Kim ,  Tae-Yong Noh ,  Sung-Hun Lee ,  Sang-Yoon Lee ,  Eun-Jeong Jeong

Inventor： Jong-Jin Park ,  Myeong-Suk Kim ,  Tae-Yong Noh ,  Sung-Hun Lee ,  Sang-Yoon Lee ,  Eun-Jeong Jeong

IPC: H01L35/24 ,  H01L51/00

CPC classification number: H01L51/0013 ,  H01L51/0055 ,  Y10S977/788

Abstract: A donor substrate for forming a nano conductive film includes a base substrate and a transferring layer that is disposed on the base substrate. The transferring layer includes nano conductive particles and an organic semiconductor. A method of patterning a nano conductive film is provided, wherein a donor substrate in which nano conductive particles are dispersed by employing an organic semiconductor having low molecular weight as a binder is prepared, and nano conductive particles are patterned on a receptor substrate by employing the donor substrate. The method can be used to prepare patterns of various devices including a display device such as an OLED and an OTFT. Such a device can be prepared simply and economically by preparing a device comprising nano conductive particles and an organic semiconductor in wet basis even without deposition.

Abstract translation: 用于形成纳米导电膜的施主衬底包括基底和设置在基底上的转印层。 转移层包括纳米导电颗粒和有机半导体。 提供一种图案化纳米导电膜的方法，其中通过使用具有低分子量的有机半导体作为粘合剂分散纳米导电颗粒的施主衬底被制备，并且通过使用纳米导电颗粒 供体底物。 该方法可用于准备包括诸如OLED和OTFT的显示装置的各种装置的图案。 这样的器件可以简单且经济地制备，即使在不沉积的情况下通过制备包含纳米导电颗粒和有机半导体的器件也是湿的。