公开(公告)号：US11244825B2

公开(公告)日：2022-02-08

申请号：US17028066

申请日：2020-09-22

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04

Abstract: Systems for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.

公开(公告)号：US11242598B2

公开(公告)日：2022-02-08

申请号：US16563473

申请日：2019-09-06

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC: C23C16/455 ,  C23C16/32 ,  H01L29/49

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

公开(公告)号：US20220018016A1

公开(公告)日：2022-01-20

申请号：US17376238

申请日：2021-07-15

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma ,  Roghayyeh Lotfi ,  Jaebeom Lee ,  Eric Christopher Stevens ,  Amit Mishra

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/32 ,  C23C16/30 ,  C23C28/00

Abstract: Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

公开(公告)号：US11227782B2

公开(公告)日：2022-01-18

申请号：US16935280

申请日：2020-07-22

Applicant: ASM IP Holding B.V.

Inventor： Chris G. M. de Ridder

IPC: H01L21/677

Abstract: Vertical batch furnace assembly for processing wafers comprising a cassette handling space, a wafer handling space, and a first wall separating the cassette handling space from the wafer handling space. The first wall has at least one wafer transfer opening in front of which a wafer transfer position for a wafer cassette is provided. The cassette handling space comprises a cassette storage, and a cassette handling mechanism. The cassette storage has a plurality of cassette storage positions and is configured to store a plurality of wafer cassettes. The cassette handling mechanism comprises a first cassette handler which is configured to transfer wafer cassettes between a first set of the cassette storage positions and the wafer transfer position. The cassette handling mechanism is provided with a second cassette handler which is configured to transfer wafer cassettes between a second set of the cassette storage positions and the wafer transfer position.

公开(公告)号：USD940837S1

公开(公告)日：2022-01-11

申请号：US29702865

申请日：2019-08-22

Applicant: ASM IP Holding B.V.

Designer： DongRak Jung ,  JiHwan Ryu ,  HwiMin Nam

公开(公告)号：US20210404060A1

公开(公告)日：2021-12-30

申请号：US17353356

申请日：2021-06-21

Applicant: ASM IP HOLDING B.V.

Inventor： Robert Brennan Milligan ,  Eric James Shero ,  Shankar Swaminathan ,  Bhushan Zope

IPC: C23C16/455 ,  C23C16/06

Abstract: Vapor deposition methods for depositing tungsten-containing thin films are provided. In some embodiments a substrate is contacted with a vapor phase first reactant comprising a tungsten precursor, such as a tungsten oxyhalide, a second reactant such as CO, and a third reactant such as H2. In some embodiments a substrate is contacted with a vapor phase first reactant comprising a tungsten precursor, such as a tungsten hexacarbonyl, a second reactant comprising a first oxidant, such as H2O, and a third reactant comprising a reducing agent, such as CO. In some embodiments the deposition process is an ALD process.

公开(公告)号：US20210399111A1

公开(公告)日：2021-12-23

申请号：US17465127

申请日：2021-09-02

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US11205585B2

公开(公告)日：2021-12-21

申请号：US15611707

申请日：2017-06-01

Applicant: ASM IP Holding B.V.

Inventor： Won Ki Jeong ,  Sung Hoon Jun ,  Dong Rak Jung

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/44 ,  C23C16/455

Abstract: Provided is a substrate processing apparatus in which parts are selectively lifted according to the purpose or subject of maintenance/repair during a maintenance/repair operation. The substrate processing apparatus includes: a chamber; a first cover and a second cover on the chamber; a lifting device connected to the first cover and configured to raise and lower the first cover; and a connection region. When the lifting device and the second cover are connected to each other via the connection region or the first and second covers are connected to each other via the connection region, the first and second covers are raised and lowered by the lifting device.

公开(公告)号：US20210358745A1

公开(公告)日：2021-11-18

申请号：US17390608

申请日：2021-07-30

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie ,  Charles Dezelah ,  Marko Tuominen

IPC: H01L21/02

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US20210358739A1

公开(公告)日：2021-11-18

申请号：US17388773

申请日：2021-07-29

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/56 ,  H01L21/768 ,  H01L21/67 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L23/31 ,  H01L21/32 ,  H01L21/027 ,  H01L21/321 ,  H01L21/3105

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.