VAPOR DEPOSITION OF TUNGSTEN FILMS

    公开(公告)号:US20210404060A1

    公开(公告)日:2021-12-30

    申请号:US17353356

    申请日:2021-06-21

    Abstract: Vapor deposition methods for depositing tungsten-containing thin films are provided. In some embodiments a substrate is contacted with a vapor phase first reactant comprising a tungsten precursor, such as a tungsten oxyhalide, a second reactant such as CO, and a third reactant such as H2. In some embodiments a substrate is contacted with a vapor phase first reactant comprising a tungsten precursor, such as a tungsten hexacarbonyl, a second reactant comprising a first oxidant, such as H2O, and a third reactant comprising a reducing agent, such as CO. In some embodiments the deposition process is an ALD process.

    Formation of boron-doped titanium metal films with high work function

    公开(公告)号:US10083836B2

    公开(公告)日:2018-09-25

    申请号:US14808979

    申请日:2015-07-24

    CPC classification number: H01L21/28562 H01L21/28088 H01L21/32051

    Abstract: A method for forming a Boron doped metallic film, such as Titanium Boron Nitride, is disclosed. The method allows for creation of the metallic film with a high work function and low resistivity, while limiting the increase in effective oxide thickness. The method comprises a thin metallic layer deposition step as well as a Boron-based gas pulse step. The Boron-based gas pulse deposits Boron and allows for the removal of excess halogens within the metallic film. The steps may be repeated in order to achieve a desired thickness of the metallic film.

    Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus

    公开(公告)号:US11976361B2

    公开(公告)日:2024-05-07

    申请号:US17714383

    申请日:2022-04-06

    Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

    METHODS FOR DEPOSITING A TRANSITION METAL NITRIDE FILM ON A SUBSTRATE BY ATOMIC LAYER DEPOSITION AND RELATED DEPOSITION APPARATUS

    公开(公告)号:US20190003052A1

    公开(公告)日:2019-01-03

    申请号:US15636307

    申请日:2017-06-28

    Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

    Semiconductor reaction chamber with plasma capabilities
    9.
    发明授权
    Semiconductor reaction chamber with plasma capabilities 有权
    具有等离子体能力的半导体反应室

    公开(公告)号:US09018111B2

    公开(公告)日:2015-04-28

    申请号:US13948055

    申请日:2013-07-22

    Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.

    Abstract translation: 一种处理室,包括具有处理区域的反应室,与处理区域连通的处理气体入口,与处理气体入口连通的第一激发物质生成区域和与处理气体入口连通的第二退出物质生成区域 。 一种处理衬底的方法,包括以下步骤:在处理区域内加载衬底,激活第一激发物种生成区以在第一脉冲期间向处理区域提供第一激发物质前体,以及激活第二激发物质产生区 在第二脉冲期间将不同于第一激发物质前体的第二激发物质前体提供给处理区域。

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