公开(公告)号：US20130038587A1

公开(公告)日：2013-02-14

申请号：US13301086

申请日：2011-11-21

Applicant: Jun-Yong SONG ,  Jae Hoon Lee

Inventor： Jun-Yong SONG ,  Jae Hoon Lee

IPC: G09G5/00

CPC classification number: G09G5/18 ,  G09G3/20 ,  G09G2300/0408 ,  G09G2310/0267 ,  G09G2310/0283 ,  G09G2310/0286 ,  G09G2310/08

Abstract: A scan driver includes stages dependently connected to each other, where each of the stages outputs a gate signal, where a first scanning start signal is input to a first stage of the stages, where a second scanning start signal is input to a last stage of the stages, where each of the first scanning start signal and the second scanning start signal has one pulse per frame, where the stages sequentially output a gate-on voltage between a time when a pulse of the first scanning start signal for a frame is input to the first stage and a time when a pulse of the second scanning start signal for the frame is input to the last stage, and where the stages output a first low voltage lower than the gate-on voltage after the pulse of the second scanning start signal for the frame is input to the last stage.

Abstract translation: 扫描驱动器包括依赖于彼此连接的级，其中每个级输出门信号，其中第一扫描开始信号被输入到级的第一级，其中第二扫描开始信号被输入到最后级 其中第一扫描开始信号和第二扫描开始信号中的每一个每帧具有一个脉冲，其中级在输入帧的第一扫描开始信号的脉冲的时间之间顺序地输出栅极导通电压 到第一级，并且将帧的第二扫描开始信号的脉冲输入到最后级的时间，并且其中级在第二扫描开始的脉​​冲之后输出低于栅极导通电压的第一低电压 帧的信号被输入到最后阶段。

公开(公告)号：US20130032821A1

公开(公告)日：2013-02-07

申请号：US13351967

申请日：2012-01-17

Applicant: Jae Hoon LEE

Inventor： Jae Hoon LEE

IPC: H01L29/872 ,  H01L21/329 ,  H01L29/205

CPC classification number: H01L29/872 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/8611

Abstract: A Schottky barrier diode (SBD) is provided, which improves electrical characteristics and optical characteristics by securing high crystallinity by including an n-gallium nitride (GaN) layer and a GaN layer which are doped with aluminum (Al). In addition, by providing a p-GaN layer on the Al-doped GaN layer, a depletion layer may be formed when a reverse current is applied, thereby reducing a leakage current. The SBD may be manufactured by etching a part of the Al-doped GaN layer and growing a p-GaN layer from the etched part of the Al-doped GaN layer. Therefore, a thin film crystal is not damaged, thereby increasing reliability. Also, since dedicated processes for ion implantation and thermal processing are not necessary, simplified process and reduced cost may be achieved.

Abstract translation: 提供肖特基势垒二极管（SBD），其通过包括掺杂有铝（Al）的氮化镓（GaN）层和GaN层来确保高结晶度而改善电特性和光学特性。 此外，通过在Al掺杂的GaN层上设置p-GaN层，当施加反向电流时可以形成耗尽层，从而减少漏电流。 可以通过蚀刻Al掺杂的GaN层的一部分并且从Al掺杂的GaN层的蚀刻部分生长p-GaN层来制造SBD。 因此，薄膜晶体不被损坏，从而增加可靠性。 此外，由于不需要用于离子注入和热处理的专用工艺，可以实现简化的工艺和降低的成本。

公开(公告)号：US20130027378A1

公开(公告)日：2013-01-31

申请号：US13331360

申请日：2011-12-20

Applicant: Jae Hoon LEE ,  Whee-Won LEE

Inventor： Jae Hoon LEE ,  Whee-Won LEE

IPC: G09G5/00

CPC classification number: G11C19/28 ,  G09G3/3677 ,  G09G2310/0286

Abstract: A display panel includes: gate and data lines; pixels connected to the gate and data lines; and a stage includes: a pull-up driver including an output terminal of the stage and which outputs a gate-on voltage, an output pull-down unit which pulls down an output terminal of the stage, a reset unit which changes a voltage of a second node into a low voltage based on a voltage of the output terminal of the stage, a first node pull-up unit which changes a first node into a high voltage based on a gate-on voltage from a previous stage, a first node pull-down unit which changes the first node into the low voltage based on the gate-on voltage from a subsequent stage, and a first node reset unit which changes the voltage of the first node into the low voltage based on the voltage of the second node.

Abstract translation: 显示面板包括：门和数据线; 连接到门和数据线的像素; 并且载台包括：上拉驱动器，其包括所述载波台的输出端子，并输出栅极导通电压;输出下拉单元，其拉低所述载波台的输出端子;复位单元， 基于所述级的输出端子的电压的第二节点变为低电压;第一节点上拉单元，其基于来自前一级的栅极导通电压将第一节点改变为高电压;第一节点 下拉单元，其基于来自后续级的栅极导通电压将第一节点改变为低电压;以及第一节点复位单元，其基于第二节点的电压将第一节点的电压改变为低电压 节点。

公开(公告)号：US08361816B2

公开(公告)日：2013-01-29

申请号：US11634106

申请日：2006-12-06

Applicant: Jae Hoon Lee ,  Jung Hee Lee ,  Hyun Ick Cho ,  Dae Kil Kim ,  Jae Chul Ro

Inventor： Jae Hoon Lee ,  Jung Hee Lee ,  Hyun Ick Cho ,  Dae Kil Kim ,  Jae Chul Ro

IPC: H01L21/00

CPC classification number: H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/22

Abstract: A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.

Abstract translation: 制造垂直GaN基LED的方法包括在硅衬底上形成氮化物基缓冲层; 在氮化物基缓冲层上依次形成p型GaN层，有源层和n型GaN层; 在n型GaN层上形成n电极; 在n电极上形成电镀种子层; 在电镀种子层上形成结构支撑层; 通过湿蚀刻去除硅衬底，并通过过蚀刻在p型GaN层的表面上形成粗糙度; 在形成有粗糙度的p型GaN层上形成p电极。

公开(公告)号：US20130017657A1

公开(公告)日：2013-01-17

申请号：US13543553

申请日：2012-07-06

Applicant: Jae Hoon LEE

Inventor： Jae Hoon LEE

IPC: H01L21/336

CPC classification number: H01L21/28264 ,  H01L21/0237 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02639 ,  H01L29/517 ,  H01L29/66522 ,  H01L29/78

Abstract: A power device manufacturing method is provided. The power device manufacturing method may perform patterning of regions on which a source electrode and a drain electrode are to be formed, may regrow n+-gallium nitride (GaN) and p+-GaN in the patterned regions and thus, a thin film crystal may not be damaged. Also, a doping concentration of n+-GaN or p+-GaN may be adjusted, an ohmic resistance in the source electrode region and the drain electrode region may decrease, and a current density may increase. The power device manufacturing method may regrow n+-GaN and p+-GaN at a high temperature after an n-GaN layer and a p-GaN layer are patterned. Accordingly, a thin film crystal may not be damaged and thus, a reliability may be secured, and an annealing process may not be additionally performed and thus, a process may be simplified and a cost may be reduced.

Abstract translation: 提供了一种功率器件制造方法。 功率器件制造方法可以对要形成源电极和漏电极的区域进行图案化，可以在图案化区域中重新生长n + - 氮化镓（GaN）和p + -GaN，因此薄膜晶体可能不会 被损坏 此外，可以调节n + -GaN或p + -GaN的掺杂浓度，源电极区域和漏电极区域中的欧姆电阻可能降低，并且电流密度可能增加。 在n-GaN层和p-GaN层被图案化之后，功率器件制造方法可以在高温下再生n + -GaN和p + -GaN。 因此，薄膜晶体可能不会被损坏，因此可以确保可靠性，并且可以不额外地执行退火处理，因此可以简化处理并且可以降低成本。

公开(公告)号：US20130015465A1

公开(公告)日：2013-01-17

申请号：US13547996

申请日：2012-07-12

Applicant: Jae-hoon LEE

Inventor： Jae-hoon LEE

IPC: H01L33/32

CPC classification number: H01L33/40 ,  H01L33/025 ,  H01L33/32

Abstract: A nitride light-emitting device includes an N-type nitride semiconductor layer; an active layer disposed on the N-type nitride semiconductor layer; and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor includes a heterojunction structure having a GaN layer and an N-type AlxInyGaN layer that is doped with an N-type dopant, and a two-dimensional electron gas (2DEG) layer formed in an interface between the GaN layer and the N-type AlxInyGaN layer.

Abstract translation: 氮化物发光器件包括N型氮化物半导体层; 设置在所述N型氮化物半导体层上的有源层; 以及设置在有源层上的P型氮化物半导体层。 P型氮化物半导体包括具有GaN层的异质结结构和掺杂有N型掺杂剂的N型Al x In y GaN层，以及形成在GaN层之间的界面中的二维电子气（2DEG）层 和N型Al x In y GaN层。

公开(公告)号：US08354307B2

公开(公告)日：2013-01-15

申请号：US12922934

申请日：2009-01-20

Applicant: Jae-Hoon Lee

Inventor： Jae-Hoon Lee

IPC: G01N15/06 ,  G01N33/00 ,  G01N33/48

CPC classification number: G01N27/3276 ,  G01N33/54373 ,  Y10T436/11 ,  Y10T436/25 ,  Y10T436/2575

Abstract: The present invention relates to a method for detecting the presence and/or the reaction of a biomolecule by monitoring changes of electrical property accurately according to the biological, biochemical or chemical reaction of the biomolecule, and a biochip provided for this purpose. The present invention provides a method for detecting the presence and/or the reaction of a biomolecule in a target sample, wherein the reaction of the target sample is performed under known reaction solution, in which a reference fluid having a high dielectric constant such as water is filled into a reaction chamber before the reaction to measure an impedance value or a capacitance value, after completing the reaction, the reaction solution is removed and said reference fluid having a high dielectric constant is refilled to measure an impedance value or a capacitance value, and then the impedance value or the capacitance value measured before and after the reaction is compared with each other.

Abstract translation: 本发明涉及通过根据生物分子的生物学，生物化学或化学反应以及为此目的提供的生物芯片来监测电性能的变化来检测生物分子的存在和/或反应的方法。 本发明提供了用于检测目标样品中生物分子的存在和/或反应的方法，其中靶样品的反应在已知的反应溶液中进行，其中具有高介电常数的参比流体如水 在反应之前填充到反应室中以测量阻抗值或电容值，在完成反应之后，除去反应溶液，并且重新填充具有高介电常数的所述参考流体以测量阻抗值或电容值， 然后将反应前后测得的阻抗值或电容值进行比较。

公开(公告)号：US20120274770A1

公开(公告)日：2012-11-01

申请号：US13458306

申请日：2012-04-27

Applicant: Jae Hoon LEE

Inventor： Jae Hoon LEE

IPC: H04N7/18

CPC classification number: G07C5/0866

Abstract: There is provided a vehicle image recording system including: a vehicle having a receiving space provided therein; a camera installed in the receiving space; a reflective device installed on a window of the vehicle or a ceiling of the vehicle to reflect image information captured from the front or the rear of the vehicle, to the camera; and a fixing member fixing the reflective device to the window or the ceiling.

Abstract translation: 提供一种车辆图像记录系统，包括：具有设置在其中的接收空间的车辆; 摄像机安装在接收空间中; 安装在车辆的窗户或车辆的天花板上的反射装置，以将从车辆的前部或后部捕获的图像信息反射到照相机; 以及将反射装置固定到窗户或天花板上的固定构件。

公开(公告)号：US20120274769A1

公开(公告)日：2012-11-01

申请号：US13437515

申请日：2012-04-02

Applicant: Jae Hoon LEE

Inventor： Jae Hoon LEE

IPC: H04N7/18

CPC classification number: G07C5/0866 ,  B60R1/08

Abstract: There are provided an image recording system for a vehicle and a reflection unit thereof. The image recording system includes a vehicle in which a storage space is provided, a camera that is installed in the storage space, and a reflection unit that is installed on a window or a ceiling of the vehicle to reflect image information from a forward or rearward direction of the vehicle into the camera.

Abstract translation: 提供了一种用于车辆的图像记录系统及其反射单元。 图像记录系统包括其中设置有存储空间的车辆，安装在存储空间中的照相机，以及安装在车辆的窗户或天花板上以从前方或后方反射图像信息的反射单元 车辆的方向进入相机。

公开(公告)号：US08295211B2

公开(公告)日：2012-10-23

申请号：US12269986

申请日：2008-11-13

Applicant: Jae-Hoon Lee ,  Ki-Uk Song ,  Seong-Taek Hwang ,  Byung-Jik Kim

Inventor： Jae-Hoon Lee ,  Ki-Uk Song ,  Seong-Taek Hwang ,  Byung-Jik Kim

IPC: H04J3/00

CPC classification number: H04L5/1469 ,  H04L5/0007 ,  H04L5/0044

Abstract: A method for transmitting/receiving data in an orthogonal frequency division multiple access-time division duplex (OFDMA-TDD) scheme. A first uplink signal and a first downlink signal of a specific band are periodically transmitted/received within a time-divided section. A second uplink signal and a second downlink signal are periodically transmitted/received, and the second signal is of a band other than the specific band, within the time-divided section, wherein, during a time section in which the first downlink signal is transmitted, the second uplink signal is received.

Abstract translation: 一种用于在正交频分多址接入时分双工（OFDMA-TDD）方案中发送/接收数据的方法。 在分时段内周期性地发送/接收特定频带的第一上行链路信号和第一下行链路信号。 周期性地发送/接收第二上行链路信号和第二下行链路信号，并且第二信号是在分时段内的特定频带之外的频带，其中在发送第一下行链路信号的时间段期间 ，接收第二上行链路信号。