公开(公告)号：US20080311513A1

公开(公告)日：2008-12-18

申请号：US11505324

申请日：2006-08-17

Applicant: Jong Jin Park ,  Eun Jeong Jeong ,  Sang Yoon Lee

Inventor： Jong Jin Park ,  Eun Jeong Jeong ,  Sang Yoon Lee

IPC: G03C1/52

CPC classification number: G03F7/165 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0047 ,  G03F7/016 ,  G03F7/027 ,  Y10S430/117

Abstract: A photosensitive metal nanoparticle and a method of forming a conductive pattern using the same, wherein a self-assembled monolayer of a thiol compound or isocyanide compound having a terminal reactive group is formed on a surface of the metal nanoparticle and a photosensitive group is introduced to the terminal reactive group. The photosensitive metal nanoparticles can easily form a conductive film or pattern having excellent conductivity upon exposure to UV, and thus can be applied for antistatic washable sticky mats or shoes, conductive polyurethane printer rollers, electromagnetic interference shielding, etc.

Abstract translation: 感光性金属纳米粒子及使用其形成导电图案的方法，其中在金属纳米粒子的表面上形成硫醇化合物的自组装单层或具有末端反应性基团的异氰化物化合物，并将光敏基团引入到 终端反应组。 感光金属纳米粒子可以容易地形成在暴露于紫外线时具有优异导电性的导电膜或图案，因此可用于抗静电可洗涤粘性垫或鞋，导电聚氨酯打印辊，电磁干扰屏蔽等。

公开(公告)号：US20080299702A1

公开(公告)日：2008-12-04

申请号：US12110744

申请日：2008-04-28

Applicant: Kyoung-seok SON ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Ji-sim JUNG

Inventor： Kyoung-seok SON ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Ji-sim JUNG

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L29/7869

Abstract: A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

Abstract translation: 本文提供了一种ZnO基薄膜晶体管（TFT）。 还提供了一种用于制造TFT的方法。 ZnO基TFT对通道层中存在的氧浓度非常敏感。 为了防止对底栅TFT的沟道层的损坏，并且为了避免由于对沟道层的损坏而产生的深负阈值电压，制造ZnO基TFT的方法包括形成蚀刻停止层或钝化层 层，其包含不稳定或不完全结合的氧，并且退火层以在氧化物层和沟道层之间引起界面反应并降低载流子浓度。

公开(公告)号：US20080197345A1

公开(公告)日：2008-08-21

申请号：US11976127

申请日：2007-10-22

Applicant: Joo Young Kim ,  Eun Kyung Lee ,  Sang Yoon Lee

Inventor： Joo Young Kim ,  Eun Kyung Lee ,  Sang Yoon Lee

IPC: H01L51/50 ,  B05D3/00 ,  C08F26/06 ,  H01L51/40

CPC classification number: C08F212/32 ,  C08F212/14 ,  H01L51/0036 ,  H01L51/052 ,  C08F222/36 ,  C08F2222/404

Abstract: Disclosed herein is a copolymer, which may include side chains which may decrease the surface energy of an insulating layer, thereby improving the alignment of a semiconductor material, and side chains including photoreactive functional groups having an increased degree of cross-linking, thereby improving the characteristics of an organic thin film transistor manufactured using the same, an organic insulating layer composition including the copolymer, an organic insulating layer, an organic thin film transistor, an electronic device including the same and methods of fabricating the same. According to the copolymer of example embodiments, the surface energy of an insulating layer may be decreased, so that the alignment of a semiconductor material may be improved, thereby improving the threshold voltage and charge mobility and decreasing the generation of hysteresis at the time of driving the transistor.

Abstract translation: 本文公开了共聚物，其可以包括侧链，其可以降低绝缘层的表面能，从而改善半导体材料的对准，以及包括具有增加的交联度的光反应性官能团的侧链，从而改善 使用其制造的有机薄膜晶体管的特征，包括共聚物的有机绝缘层组合物，有机绝缘层，有机薄膜晶体管，包含该共聚物的有机绝缘层组合物，包含其的电子器件及其制造方法。 根据实施例的共聚物，可以降低绝缘层的表面能，从而可以提高半导体材料的取向，从而提高阈值电压和电荷迁移率，并减少驱动时滞后的产生 晶体管。

公开(公告)号：US20080191198A1

公开(公告)日：2008-08-14

申请号：US11898977

申请日：2007-09-18

Applicant: Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

Inventor： Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

IPC: H01L51/10

CPC classification number: H01L51/0049 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566 ,  Y10S977/745

Abstract: An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.

Abstract translation: 有机薄膜晶体管可以包括具有表面改性的碳纳米管和导电聚合物的有机半导体层。 碳纳米管的表面可以用可固化官能团改性，包括环氧乙烷基团和酸酐基团。 可以使用室温溶液法以简单和经济的方式提供相对均匀且相对高度粘合的有机半导体层。 另外，具有有机半导体层的有机薄膜晶体管可以具有相对高的载流子迁移率和相对低的阈值电压。

公开(公告)号：US20080128684A1

公开(公告)日：2008-06-05

申请号：US11819036

申请日：2007-06-25

Applicant: Do Hwan Kim ,  Jung Seok Hahn ,  Sang Yoon Lee ,  Bon Won Koo

Inventor： Do Hwan Kim ,  Jung Seok Hahn ,  Sang Yoon Lee ,  Bon Won Koo

IPC: H01L51/40 ,  H01L51/00

CPC classification number: H01L51/0545 ,  H01L51/0021 ,  H01L51/105

Abstract: Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.

Abstract translation: 公开了通过有机半导体材料的氧化和选择性还原来制造有机薄膜晶体管的方法。 根据该方法，可以保证半导体层与有机薄膜晶体管的源极/漏极之间的界面的稳定性。 因此，通过该方法制造的有机薄膜晶体管可以表现出改进的性能特性，例如最小化或降低的接触电阻和增加的电荷载流子迁移率。

公开(公告)号：US20080116452A1

公开(公告)日：2008-05-22

申请号：US11806742

申请日：2007-06-04

Applicant: Eun Jeong Jeong ,  Hyun Sik Moon ,  Jeong il Park ,  Sang Yoon Lee

Inventor： Eun Jeong Jeong ,  Hyun Sik Moon ,  Jeong il Park ,  Sang Yoon Lee

IPC: H01L51/40 ,  C07D495/02 ,  H01L51/00

CPC classification number: H01L51/0056 ,  C07D495/04 ,  C07F7/0812 ,  H01L51/0058 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

Abstract: Disclosed are a novel aromatic enediyne derivative, an organic semiconductor thin film using the same, and an electronic device. Example embodiments pertain to an aromatic enediyne derivative which enables the formation of a chemically and electrically stable and reliable semiconductor thin film using a solution process, e.g., spin coating and/or spin casting, at about room temperature when applied to devices, an organic semiconductor thin film using the same, and an electronic device including the organic semiconductor thin film. A thin film having a relatively large area may be formed through a solution process, therefore simplifying the manufacturing process and decreasing the manufacturing cost. Moreover, it is possible to provide an organic semiconductor that may be effectively applied to various fields including organic thin film transistors, electroluminescent devices, solar cells, and memory.

Abstract translation: 公开了一种新型芳族烯二炔衍生物，使用其的有机半导体薄膜和电子器件。 示例性实施方案涉及芳族烯二炔衍生物，其能够在施加到器件时在大约室温下使用溶液法（例如旋涂和/或旋转浇铸）形成化学和电稳定且可靠的半导体薄膜，有机半导体 使用其的薄膜，以及包括有机半导体薄膜的电子器件。 可以通过溶液工艺形成具有相对较大面积的薄膜，从而简化制造工艺并降低制造成本。 此外，可以提供可有效地应用于有机薄膜晶体管，电致发光器件，太阳能电池和存储器等各种领域的有机半导体。

公开(公告)号：US20080105866A1

公开(公告)日：2008-05-08

申请号：US11802657

申请日：2007-05-24

Applicant: Eun Jeong Jeong ,  Jung Seok Hahn ,  Jeong Il Park ,  Sang Yoon Lee

Inventor： Eun Jeong Jeong ,  Jung Seok Hahn ,  Jeong Il Park ,  Sang Yoon Lee

IPC: H01L51/40 ,  C07D333/02 ,  C07F9/08 ,  H01L29/08

CPC classification number: H01L51/105 ,  C07F9/14 ,  C07F9/1406 ,  C07F9/572 ,  C07F9/65515 ,  C07F9/655345 ,  H01L51/0541

Abstract: Disclosed is a method of fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes, and an organic semiconductor layer, in which the surface of the metal oxide source/drain electrodes or of the metal oxide source/drain electrodes and gate insulating layer is treated with a self assembled monolayer-forming compound containing a dichlorophosphoryl group. According to the method of example embodiments, the work function of the metal oxide of the source/drain electrodes may be increased to be higher than that with no SAM-forming electrode, thus making it possible to fabricate an improved organic thin film transistor having increased charge mobility.

Abstract translation: 公开了一种制造有机薄膜晶体管的方法，其包括基板，栅电极，栅极绝缘层，金属氧化物源极/漏极和有机半导体层，其中金属氧化物源极/漏极的表面或 的金属氧化物源极/漏极和栅极绝缘层用含有二氯磷酰基的自组装单层形成化合物处理。 根据示例性实施例的方法，可以将源/漏电极的金属氧化物的功函数增加到高于没有SAM形成电极的功函数，从而可以制造具有增加的改进的有机薄膜晶体管 充电流动性。

公开(公告)号：US20080076872A1

公开(公告)日：2008-03-27

申请号：US11706985

申请日：2007-02-16

Applicant: Jung Seok Hahn ,  Tae-Sang Kim ,  Bang-Lin Lee ,  Sang-Yoon Lee ,  Eun Kyung Lee

Inventor： Jung Seok Hahn ,  Tae-Sang Kim ,  Bang-Lin Lee ,  Sang-Yoon Lee ,  Eun Kyung Lee

IPC: C08L41/00

CPC classification number: C08L65/00 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0097 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

Abstract: Example embodiments pertain to an organic semiconductor composition, in which low-molecular-weight oligomer compounds are distributed in the spaces of a polymer compound so that the free spaces of the organic semiconductor polymer compound are filled with the low-molecular-weight oligomer compounds upon the formation of an organic semiconductor thin film, thereby increasing π-π stacking effects, and to an organic semiconductor thin film using the same and an organic electronic device employing the thin film. Using the organic semiconductor composition according to example embodiments, a semiconductor thin film and an organic electronic device having improved electrical properties may be manufactured.

Abstract translation: 示例性实施方案涉及有机半导体组合物，其中低分子量低聚物化合物分布在高分子化合物的空间中，使得有机半导体聚合物化合物的自由空间填充有低分子量低聚物化合物 有机半导体薄膜的形成，从而增加pi-pi堆叠效应，以及使用该有机半导体薄膜的有机半导体薄膜和使用该薄膜的有机电子器件。 使用根据示例性实施方案的有机半导体组合物，可以制造具有改善的电性能的半导体薄膜和有机电子器件。

公开(公告)号：US20080067505A1

公开(公告)日：2008-03-20

申请号：US11783136

申请日：2007-04-06

Applicant: Eun Kyung Lee ,  Joo Young Kim ,  Sang Yoon Lee ,  Jung Seok Hahn

Inventor： Eun Kyung Lee ,  Joo Young Kim ,  Sang Yoon Lee ,  Jung Seok Hahn

IPC: H01L51/30 ,  C08G65/38 ,  H01L51/40

CPC classification number: H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  Y10T428/31678

Abstract: Disclosed are a composition comprising an organic insulating polymer in which a photo-reactive functional group showing an increased crosslinking degree is introduced into a side-chain, an organic insulating film comprising the composition, an organic thin film transistor (OTFT) comprising the organic insulating film, an electronic device comprising the organic thin film transistor and methods of fabricating the organic insulating film, the organic thin film transistor and the electronic device. The OTFT comprising the organic insulating film of example embodiments may not show any hysteresis during the driving of the OTFT, and therefore, may exhibit a homogeneous property.

Abstract translation: 公开了一种组合物，其包含其中将具有增加的交联度的光反应性官能团引入侧链的有机绝缘聚合物，包含该组合物的有机绝缘膜，包含有机绝缘体的有机薄膜晶体管（OTFT） 膜，包括有机薄膜晶体管的电子器件和制造有机绝缘膜，有机薄膜晶体管和电子器件的方法。 包含示例性实施例的有机绝缘膜的OTFT在驱动OTFT期间可能不显示任何滞后，因此可以表现出均匀的性质。

公开(公告)号：US20080067503A1

公开(公告)日：2008-03-20

申请号：US11655181

申请日：2007-01-19

Applicant: Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

Inventor： Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

IPC: H01L51/10 ,  H01L51/30 ,  H01L51/40

CPC classification number: H01L51/052 ,  C08G61/124 ,  C08G73/0611 ,  H01L51/0545

Abstract: Disclosed is an insulating organic polymer having side chains that enable the formation of a highly hydrophobic insulating layer with decreased surface energy. Decreased surface energy of an organic insulating layer formed using the insulating organic polymer may lead to an increase in the degree of alignment of a semiconductor material. Therefore, the insulating organic polymer may be used to fabricate an organic thin film transistor having improved characteristics, e.g., decreased threshold voltage and increased charge carrier mobility. Further disclosed are an organic insulating layer formed using the insulating polymer, an organic thin film transistor comprising the insulating layer and a method of fabricating the same, and an electronic device comprising the organic thin film transistor.

Abstract translation: 公开了具有侧链的绝缘有机聚合物，其能够形成具有降低的表面能的高疏水性绝缘层。 使用绝缘性有机聚合物形成的有机绝缘层的表面能的降低可能导致半导体材料的取向度的增加。 因此，绝缘有机聚合物可用于制造具有改进的特性的有机薄膜晶体管，例如降低的阈值电压和增加的电荷载流子迁移率。 还公开了使用绝缘聚合物形成的有机绝缘层，包括该绝缘层的有机薄膜晶体管及其制造方法，以及包含该有机薄膜晶体管的电子器件。