公开(公告)号：US11676858B2

公开(公告)日：2023-06-13

申请号：US17362304

申请日：2021-06-29

Applicant: Applied Materials, Inc.

Inventor： Samuel E. Gottheim ,  Eswaranand Venkatasubramanian ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/683 ,  H01L21/02 ,  H01L21/762 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/76837 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32568 ,  H01L21/0217 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/67248 ,  H01L21/6833 ,  H01L21/76224 ,  H01J2237/3321

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high quality gapfill. Some embodiments utilize chemical vapor deposition, plasma vapor deposition, physical vapor deposition and combinations thereof to deposit the gapfill. The gapfill is of high quality and similar in properties to similarly composed bulk materials.

公开(公告)号：US11655537B2

公开(公告)日：2023-05-23

申请号：US17079630

申请日：2020-10-26

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick

IPC: C23C16/04 ,  C23C16/505 ,  H01L21/768

CPC classification number: C23C16/045 ,  C23C16/505 ,  H01L21/76837

Abstract: Methods for filling a substrate feature with a carbon gap fill, while leaving a void, are described. Methods comprise flowing a process gas into a high density plasma chemical vapor deposition (HDP-CVD) chamber, the chamber housing a substrate having at least one feature, the process gas comprising a hydrocarbon reactant, generating a plasma, and depositing a carbon film.

公开(公告)号：US20230090426A1

公开(公告)日：2023-03-23

申请号：US17947318

申请日：2022-09-19

Applicant: Applied Materials, Inc.

Inventor： Sieun Chae ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/477

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region and forming a first layer of material on the substrate. The first layer of material may include silicon oxide. The methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber and forming a plasma of the germanium-containing precursor in the processing region. Forming the plasma of the germanium-containing precursor may be performed at a plasma power of greater than or about 500 W. The methods may include forming a second layer of material on the substrate. The second layer of material may include germanium oxide.

公开(公告)号：US11469097B2

公开(公告)日：2022-10-11

申请号：US17045453

申请日：2019-04-08

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Yang Yang ,  Pramit Manna ,  Kartik Ramaswamy ,  Takehito Koshizawa ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/26 ,  H01L21/033

Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

公开(公告)号：US11462630B2

公开(公告)日：2022-10-04

申请号：US16640580

申请日：2018-08-28

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yi Yang ,  Karthik Janakiraman ,  Abhijit Basu Mallick

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/78

Abstract: Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In some embodiments, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film include halogen atoms. The film may be subsequently annealed to diffuse the dopants into the 3D structures.

公开(公告)号：US20220189824A1

公开(公告)日：2022-06-16

申请号：US17119648

申请日：2020-12-11

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/311 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56

Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material.

公开(公告)号：US20220186365A1

公开(公告)日：2022-06-16

申请号：US17119655

申请日：2020-12-11

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC: C23C16/40

Abstract: Methods for forming coating films comprising germanium oxide are disclosed. In some embodiments, the films are super-conformal to a feature on the surface of a substrate. The films are deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the super-conformal film.

公开(公告)号：US11355354B1

公开(公告)日：2022-06-07

申请号：US17157313

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/00 ,  H01L21/48 ,  H01L21/02

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. The methods may include thermally reacting the silicon-containing precursor, the oxygen-containing precursor, and the carbon-containing precursor at a temperature below about 650° C. The methods may include forming a silicon-and-oxygen-and-carbon-containing layer on the substrate.

公开(公告)号：US20220130658A1

公开(公告)日：2022-04-28

申请号：US17078985

申请日：2020-10-23

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/40

Abstract: Methods for depositing a silicon-containing film on a substrate are described. The method comprises heating a processing chamber to a temperature greater than or equal to 200° C.; maintaining the processing chamber at a pressure of less than or equal to 300 Torr; coflowing a silicon precursor and nitrous oxide (N2O) into the processing chamber, and depositing a conformal silicon-containing film on the substrate. The silicon-containing film has dielectric constant (k-value) in a range of from about 3.8 to about 4.0, has a breakdown voltage of greater than 8 MV/cm at a leakage current of 1 mA/cm2 and has a leakage current of less than 1 nA/cm2 at 2 MV/cm.

公开(公告)号：US20220127718A1

公开(公告)日：2022-04-28

申请号：US17079630

申请日：2020-10-26

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick

IPC: C23C16/04 ,  C23C16/505

Abstract: Methods for filling a substrate feature with a carbon gap fill, while leaving a void, are described. Methods comprise flowing a process gas into a high density plasma chemical vapor deposition (HDP-CVD) chamber, the chamber housing a substrate having at least one feature, the process gas comprising a hydrocarbon reactant, generating a plasma, and depositing a carbon film.