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公开(公告)号：US11936288B2
公开(公告)日：2024-03-19
申请号：US17548754
申请日：2021-12-13
Applicant: STMicroelectronics (Tours) SAS , STMicroelectronics LTD
Inventor： Ghafour Benabdelaziz , Laurent Gonthier
CPC classification number: H02M1/4208 , H02M7/1557 , H02M7/217 , H02M1/322
Abstract: An AC capacitor is coupled to a totem-pole type PFC circuit. In response to detection of a power input disconnection, the PFC circuit is controlled to discharge the AC capacitor. The PFC circuit includes a resistor and a first MOSFET and a second MOSFET coupled in series between DC output nodes with a common node coupled to the AC capacitor. When the disconnection event is detected, one of the first and second MOSFETs is turned on to discharge the AC capacitor with a current flowing through the resistor and the turned on MOSFET. Furthermore, a thyristor may be simultaneously turned on, with the discharge current flowing through a series coupling of the MOSFET, resistor and thyristor. Disconnection is detected by detecting a zero-crossing failure of an AC power input voltage or lack of input voltage decrease or input current increase in response to MOSFET turn on for a DC input.
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公开(公告)号：US11881358B2
公开(公告)日：2024-01-23
申请号：US17839189
申请日：2022-06-13
Applicant: STMICROELECTRONICS (TOURS) SAS
Inventor： Mohamed Boufnichel
Abstract: A vertical capacitor includes a stack of layers conformally covering walls of a first material. The walls extend from a substrate made of a second material different from the first material.
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公开(公告)号：US20240022242A1
公开(公告)日：2024-01-18
申请号：US18373083
申请日：2023-09-26
Applicant: STMicroelectronics (Tours) SAS
Inventor： Romain PICHON , Yannick HAGUE
CPC classification number: H03K17/136 , H03K17/76 , H03K17/305
Abstract: A control device includes a triac and a first diode that is series-connected between the triac and a first terminal of the device that is configured to be connected to a cathode gate of a thyristor. A second terminal of the control device is configured to be connected to an anode of the thyristor. The triac has a gate connected to a third terminal of the device that is configured to receive a control signal. The thyristor is a component part of one or more of a rectifying bridge circuit, an in-rush current limiting circuit or a solid-state relay circuit.
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公开(公告)号：US20240021701A1
公开(公告)日：2024-01-18
申请号：US18349041
申请日：2023-07-07
Applicant: STMicroelectronics (Tours) SAS
Inventor： Aurelie ARNAUD , Julien LADROUE
IPC: H01L29/66 , H01L29/866 , H01L29/861
CPC classification number: H01L29/66106 , H01L29/866 , H01L29/8611 , H01L29/66128 , H01L29/66136 , H01L21/02315
Abstract: The present description concerns a method for manufacturing a protection device against overvoltages, comprising the following successive steps: a) epitaxially forming, on a semiconductor substrate, a semiconductor layer; b) submitting the upper surface of the semiconductor layer to a fluorinated-plasma process; and c) forming an electrically-insulating layer over and contacting the upper surface of the semiconductor layer.
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公开(公告)号：US20240021604A1
公开(公告)日：2024-01-18
申请号：US18478465
申请日：2023-09-29
Inventor： Mathieu ROUVIERE , Arnaud YVON , Mohamed SAADNA , Vladimir SCARPA
IPC: H01L27/06 , H01L21/02 , H01L21/8252 , H01L29/20 , H01L29/40 , H01L29/66 , H01L29/778 , H01L29/872
CPC classification number: H01L27/0629 , H01L21/0254 , H01L21/8252 , H01L27/0605 , H01L29/2003 , H01L29/40 , H01L29/66212 , H01L29/66462 , H01L29/7786 , H01L29/872
Abstract: A monolithic component includes a field-effect power transistor and at least one first Schottky diode inside and on top of a gallium nitride substrate.
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Patent Agency Ranking
公开(公告)号：US11824028B2
公开(公告)日：2023-11-21
申请号：US17458070
申请日：2021-08-26
Applicant: STMICROELECTRONICS (TOURS) SAS
Inventor： Olivier Ory , Christophe Lebrere
CPC classification number: H01L24/16 , H01L24/11 , H01L24/13 , H01L24/81 , H01L25/105 , H01L2224/11916 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/8185 , H01L2224/81801
Abstract: The present disclosure relates to a die comprising metal pillars extending from a surface of the die, the height of each pillar being substantially equal to or greater than 20 μm, the pillars being intended to raise the die when fastening the die by means of a bonding material on a surface of a support. The metal pillars being inserted into the bonding material at which point the bonding material is annealed to be cured and hardened solidifying the bonding material to couple the die to the surface of the support.
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公开(公告)号：US20230290770A1
公开(公告)日：2023-09-14
申请号：US18052158
申请日：2022-11-02
Applicant: STMicroelectronics (Tours) SAS , STMicroelectronics S.r.l.
Inventor： Aurelie Arnaud , Andrea Brischetto
IPC: H01L27/02 , H01L29/16 , H01L29/861 , H02H9/04
CPC classification number: H01L27/0248 , H01L29/16 , H01L29/861 , H02H9/046 , H01L27/0255
Abstract: An ESD protection circuit includes a terminal connected to the cathode of a first diode and to the anode of a second diode, where the cathode of the second diode is not made of epitaxial silicon.
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公开(公告)号：US20230198559A1
公开(公告)日：2023-06-22
申请号：US18113796
申请日：2023-02-24
Applicant: STMicroelectronics (Tours) SAS
Inventor： Jean Pierre PROOT , Pascal PAILLET , Francois DUPONT
CPC classification number: H04B1/0458 , H03H7/38 , H04B1/18
Abstract: A circuit device includes a directional coupler with a first port receiving a radiofrequency signal, a second port outputting a signal in response to signal received by the first port, and a third port outputting a signal in response to a reflection of the signal at the second port. An impedance matching network is connected between the second port and an antenna. The impedance matching network includes fixed inductive and capacitive components and a single variable inductive or capacitive component. A diode coupled to the third port of the coupler generates a voltage at a measurement terminal which is processed in order to select and set the inductance or capacitance value of the variable inductive or capacitive component.
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公开(公告)号：US11682981B2
公开(公告)日：2023-06-20
申请号：US16793521
申请日：2020-02-18
Applicant: STMicroelectronics (Tours) SAS
Inventor： Frederic Gautier
IPC: H02M7/219 , H02M7/5387 , G05F3/20 , H02M7/217 , H02M1/00
CPC classification number: H02M7/219 , G05F3/20 , H02M7/217 , H02M7/5387 , H02M1/0032 , H02M7/2195
Abstract: A rectifying element includes a MOS transistor series-connected with a Schottky diode. A bias voltage is applied between the control terminal of the MOS transistor and the terminal of the Schottky diode opposite to the transistor. A pair of the rectifying elements are substituted for diodes of a rectifying bridge circuit. Alternatively, the control terminal bias is supplied from a cross-coupling against the Schottky diodes. In another implementation, the Schottky diodes are omitted and the bias voltage applied to control terminals of the MOS transistors is switched in response to cross-coupled divided source-drain voltages of the MOS transistors. The circuits form components of a power converter.
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公开(公告)号：US11621734B2
公开(公告)日：2023-04-04
申请号：US17321757
申请日：2021-05-17
Applicant: STMicroelectronics (Tours) SAS
Inventor： Jean Pierre Proot , Pascal Paillet , Francois Dupont
Abstract: A circuit device includes a directional coupler with a first port receiving a radiofrequency signal, a second port outputting a signal in response to signal received by the first port, and a third port outputting a signal in response to a reflection of the signal at the second port. An impedance matching network is connected between the second port and an antenna. The impedance matching network includes fixed inductive and capacitive components and a single variable inductive or capacitive component. A diode coupled to the third port of the coupler generates a voltage at a measurement terminal which is processed in order to select and set the inductance or capacitance value of the variable inductive or capacitive component.
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