公开(公告)号：US07814276B2

公开(公告)日：2010-10-12

申请号：US11943228

申请日：2007-11-20

Applicant: Yen-Chin Lin ,  Hsin-Chung Wang ,  Chun-Hung Lin

Inventor： Yen-Chin Lin ,  Hsin-Chung Wang ,  Chun-Hung Lin

IPC: G06F12/00

CPC classification number: G06F12/0804 ,  G06F12/0886 ,  G06F2212/2022

Abstract: The present invention provides a data cache architecture interposed between a host and a flash memory, the data cache architecture comprising: a buffer memory, receiving data from the host; a memory controller, deploying the data in the buffer memory; and a data cache memory, controlled by the memory controller according to a cache algorithm. The data cache architecture and the cache algorithm used in the data cache architecture can be used to minimize the program/erase count of the NAND type flash device.

Abstract translation: 本发明提供一种插入在主机和闪速存储器之间的数据高速缓存架构，所述数据高速缓存架构包括：缓冲存储器，从所述主机接收数据; 存储器控制器，将数据部署在缓冲存储器中; 以及由存储器控制器根据高速缓存算法控制的数据高速缓冲存储器。 可以使用数据高速缓存架构中使用的数据高速缓存结构和缓存算法来最小化NAND型闪存设备的编程/擦除计数。

公开(公告)号：US07496763B2

公开(公告)日：2009-02-24

申请号：US10998722

申请日：2004-11-30

Applicant: Li-Kuo Chiu ,  Ming-Shun Chen ,  Mao Yuan Ku ,  Yng-Tsang Chen ,  Bruce C. S. Chou

Inventor： Li-Kuo Chiu ,  Ming-Shun Chen ,  Mao Yuan Ku ,  Yng-Tsang Chen ,  Bruce C. S. Chou

IPC: G06F21/00

CPC classification number: G06F21/79 ,  G06F21/32 ,  G06F2221/2115

Abstract: A memory storage device includes a host interface to be connected to a terminal host, a controller connected to the host interface, and a fingerprint sensor and a memory module both connected to the controller. The controller communicates with the terminal host by handshakes and causes the terminal host to automatically run a suitable driver and a suitable application program from the memory module to the terminal host. The terminal host receives an instruction from a user through the driver and the program and informs the controller to control the fingerprint sensor to read to-be-recognized fingerprint data of the user. The terminal host utilizes the application program to process and judge whether or not the to-be-recognized fingerprint data substantially matches with template fingerprint data stored in the memory module, and further enables a specific block of the memory module to be accessed by the terminal host according to a matching result.

Abstract translation: 存储器存储设备包括要连接到终端主机的主机接口，连接到主机接口的控制器以及连接到控制器的指纹传感器和存储器模块。 控制器通过握手与终端主机进行通信，并使终端主机自动运行适当的驱动程序和适当的应用程序，从存储模块到终端主机。 终端主机通过驱动程序和程序接收用户的指令，并通知控制器控制指纹传感器读取用户的被识别指纹数据。 终端主机利用应用程序来处理和判断被识别的指纹数据是否与存储在存储器模块中的模板指纹数据基本匹配，并且还使得存储器模块的特定块可被终端访问 主机根据匹配结果。

公开(公告)号：US07447925B2

公开(公告)日：2008-11-04

申请号：US11306702

申请日：2006-01-09

Applicant: Chien-Chu Chan

Inventor： Chien-Chu Chan

IPC: G06F1/00 ,  G06F1/26

CPC classification number: G06F1/305 ,  G11C5/143

Abstract: A method of state maintenance for a flash storage card system. The method includes using a plurality of signals, including a working voltage signal, a low voltage detection (LVD) signal, an LVD interrupt signal, a firmware polling signal, an LVD interrupt reset signal. The LVD signal responds to a voltage level of the working voltage at a preset voltage level. The LVD interrupt signal responds to the level of the LVD signal. After the LVD signal returns to the high level state and the firmware polling signal does the polling action to the LVD interrupt signal, then the LVD interrupt reset signal is issued to reset the LVD interrupt signal.

Abstract translation: 一种闪存卡系统的状态维护方法。 该方法包括使用多个信号，包括工作电压信号，低电压检测（LVD）信号，LVD中断信号，固件轮询信号，LVD中断复位信号。 LVD信号以预设电压电平响应工作电压的电压电平。 LVD中断信号响应LVD信号的电平。 在LVD信号返回到高电平状态并且固件轮询信号对LVD中断信号进行轮询动作之后，发出LVD中断复位信号以复位LVD中断信号。

公开(公告)号：US07227232B2

公开(公告)日：2007-06-05

申请号：US10509908

申请日：2003-04-28

Applicant: Jhyy-Cheng Liou ,  Chin-Hsi Lin

Inventor： Jhyy-Cheng Liou ,  Chin-Hsi Lin

IPC: H01L29/76 ,  G11C17/00

CPC classification number: H01L27/11233 ,  H01L27/112 ,  H01L27/11226 ,  H01L27/1126

Abstract: A contactless Mask ROM is described, comprising a plurality of MOS-type memory cells. The memory cells include a plurality of first memory cells and a plurality of second memory cells. The first memory cells have a first channel conductivity so that they are depletion-mode MOS transistors, and the second memory cells have a second channel conductivity so that they are enhanced-mode MOS transistors. In the contactless Mask ROM, a memory cell shares two diffusions with two adjacent memory cells that are aligned with the memory cell along a first direction.

Abstract translation: 描述了一种非接触式掩模ROM，包括多个MOS型存储单元。 存储单元包括多个第一存储单元和多个第二存储单元。 第一存储单元具有第一通道导电性，使得它们是耗尽型MOS晶体管，并且第二存储单元具有第二沟道电导率，使得它们是增强型MOS晶体管。 在非接触式掩模ROM中，存储器单元与沿着第一方向与存储器单元对准的两个相邻存储器单元共享两个扩散。

公开(公告)号：US07200038B2

公开(公告)日：2007-04-03

申请号：US11162731

申请日：2005-09-21

Applicant: Chien-Hsing Lee ,  Chin-Hsi Lin ,  Jhyy-Cheng Liou

Inventor： Chien-Hsing Lee ,  Chin-Hsi Lin ,  Jhyy-Cheng Liou

IPC: G11C11/34 ,  G11C16/04

CPC classification number: G11C16/3468

Abstract: The invention is directed to a layout of nonvolatile memory device. The memory cell has a gate electrode, a first doped electrode, and a second doped electrode. The first doped electrode is coupled to the bit line. The gate electrode is coupled to one separated word line. A shared coupled capacitor structure is coupled between all of memory cells of the adjacent bit lines from the second doped electrode. The capacitor structure has at least two floating-gate MOS capacitors. Each floating-gate MOS capacitor has a floating-gate transistor having a floating gate, a first S/D region and a second S/D region; and a MOS capacitor coupled to the floating gate. The first S/D region is coupled to the second doped electrode of the corresponding one of the transistor memory cells, and the second S/D region is shared with an adjacent one of the floating-gate transistor.

Abstract translation: 本发明涉及非易失性存储器件的布局。 存储单元具有栅电极，第一掺杂电极和第二掺杂电极。 第一掺杂电极耦合到位线。 栅电极耦合到一个分离的字线。 共享耦合电容器结构耦合在来自第二掺杂电极的相邻位线的所有存储单元之间。 电容器结构具有至少两个浮栅MOS电容器。 每个浮栅MOS电容器具有浮置晶体管，其具有浮置栅极，第一S / D区域和第二S / D区域; 以及耦合到浮动栅极的MOS电容器。 第一S / D区域耦合到相应一个晶体管存储单元的第二掺杂电极，并且第二S / D区域与浮置栅晶体管的相邻一个共享。

公开(公告)号：US07114051B2

公开(公告)日：2006-09-26

申请号：US10160519

申请日：2002-06-01

Applicant: Morris Guu ,  Yin Guei Chen

Inventor： Morris Guu ,  Yin Guei Chen

IPC: G06F12/06

CPC classification number: G06F21/80 ,  G06F3/0601 ,  G06F12/1466 ,  G06F2003/0694 ,  G06F2003/0697

Abstract: A method for partitioning a memory mass storage device is disclosed. The partition task is performed by the controller within the memory mass storage device. Firstly, the controller partitions the logical space of the memory storage device into multiple areas, each area belonging to a particular drive. Secondly, the controller partitions the logical space of the memory storage device into a public area and a security area, both areas belonging to the same drive. Finally, the controller partitions the logical space of the memory storage device into multiple areas, which include public areas and security areas and belong to multiple drives.

公开(公告)号：US20210195340A1

公开(公告)日：2021-06-24

申请号：US16719941

申请日：2019-12-18

Applicant: Solid State System Co., Ltd.

Inventor： Tsung-Min Hsieh ,  Cheng-Wei Tsai ,  Chien-Hsing Lee

IPC: H04R19/04 ,  B81C1/00 ,  H04R1/22 ,  H04R7/18 ,  B81B3/00 ,  H04R19/00 ,  H04R7/08

Abstract: In an embodiment, the invention provides a structure of MEMS microphone includes a substrate of semiconductor, having a first opening in the substrate. A dielectric layer is disposed on the substrate, having a dielectric opening. A diaphragm is within the dielectric opening and held by the dielectric layer at a peripheral region, wherein the diaphragm has a diaphragm opening. A back-plate is disposed on the dielectric layer, over the diaphragm. A protruding structure is disposed on the back-plate, protruding toward the diaphragm. At least one air valve plate is affixed on an end of the protruding structure within the diaphragm opening of the diaphragm. The air valve plate is activated when suffering an air flow with a pressure.

公开(公告)号：US20160360417A1

公开(公告)日：2016-12-08

申请号：US15242613

申请日：2016-08-22

Applicant: Solid State System Co., Ltd.

Inventor： Tai-Yao Lee ,  Ting-Chung Hu

IPC: H04W12/08 ,  H04L29/06 ,  G06F3/06

CPC classification number: H04W12/08 ,  G06F3/0622 ,  G06F3/0637 ,  G06F3/0673 ,  G06F12/0246 ,  G06F12/14 ,  G06F21/79 ,  G06F2212/7209 ,  H04L63/083 ,  H04L63/105 ,  H04L63/107 ,  H04W4/80 ,  H04W12/00503 ,  H04W12/06

Abstract: A mobile storage device with access control includes a portable storage device and an access control device. The access control device has a non-volatile memory for storing an access-control setting information. If the access-control setting information has already been set with required parameters and when the portable storage device with the access control device is connected to a master equipment, the portable storage device is automatically switched to a secured private zone for the master equipment to access the secured private zone. Further, an agreement to recognize the access-control setting information is made in each time of access if the access control device requires the agreement.

Abstract translation: 具有访问控制的移动存储设备包括便携式存储设备和访问控制设备。 访问控制装置具有用于存储访问控制设置信息的非易失性存储器。 如果访问控制设置信息已经被设置为所需参数，并且当具有访问控制设备的便携式存储设备连接到主设备时，便携式存储设备被自动切换到主设备访问的安全私有区域 安全私人区域。 此外，如果访问控制设备需要协商，则在每次访问时都进行识别访问控制设置信息的协议。

公开(公告)号：US08987842B2

公开(公告)日：2015-03-24

申请号：US13615645

申请日：2012-09-14

Applicant: Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

IPC: H01L29/84 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00158 ,  B81B3/00 ,  B81B3/0013 ,  B81B7/00 ,  B81B2201/0257 ,  B81C1/00 ,  B81C1/00952 ,  H04R19/005 ,  H04R2201/003

Abstract: A MEMS device includes a silicon substrate and a structural dielectric layer. The silicon substrate has a cavity. The structural dielectric layer is disposed on the silicon substrate. The structural dielectric layer has a space above the cavity of the silicon substrate and holds a plurality of structure elements within the space, including: a conductive backplate, over the silicon substrate, having a plurality of venting holes and a plurality of protrusion structures on top of the conductive backplate; and a diaphragm, located above the conductive backplate by a distance, wherein a chamber is formed between the diaphragm and the conductive backplate, and is connected to the cavity of the silicon substrate through the venting holes. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate and a second side of the diaphragm is exposed to an environment space.

Abstract translation: MEMS器件包括硅衬底和结构介电层。 硅衬底具有空腔。 结构介电层设置在硅衬底上。 所述结构介电层在所述硅衬底的空腔上方具有空间，并且在所述空间内保持多个结构元件，所述结构元件包括：在所述硅衬底上的导电背板，具有多个通气孔和顶部的多个突出结构 的导电背板; 以及隔膜，位于导电背板上方一段距离处，其中在隔膜和导电背板之间形成腔室，并且通过排气孔与硅衬底的空腔连接。 隔膜的第一侧由腔室暴露，并面向导电背板的突出结构，并且隔膜的第二侧暴露于环境空间。

公开(公告)号：US20140077317A1

公开(公告)日：2014-03-20

申请号：US13615645

申请日：2012-09-14

Applicant: Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81C1/00158 ,  B81B3/00 ,  B81B3/0013 ,  B81B7/00 ,  B81B2201/0257 ,  B81C1/00 ,  B81C1/00952 ,  H04R19/005 ,  H04R2201/003

Abstract: A MEMS device includes a silicon substrate and a structural dielectric layer. The silicon substrate has a cavity. The structural dielectric layer is disposed on the silicon substrate. The structural dielectric layer has a space above the cavity of the silicon substrate and holds a plurality of structure elements within the space, including: a conductive backplate, over the silicon substrate, having a plurality of venting holes and a plurality of protrusion structures on top of the conductive backplate; and a diaphragm, located above the conductive backplate by a distance, wherein a chamber is formed between the diaphragm and the conductive backplate, and is connected to the cavity of the silicon substrate through the venting holes. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate and a second side of the diaphragm is exposed to an environment space.

Abstract translation: MEMS器件包括硅衬底和结构介电层。 硅衬底具有空腔。 结构介电层设置在硅衬底上。 所述结构介电层在所述硅衬底的空腔上方具有空间，并且在所述空间内保持多个结构元件，所述结构元件包括：在所述硅衬底上的导电背板，具有多个通气孔和顶部的多个突出结构 的导电背板; 以及隔膜，位于导电背板上方一定距离处，其中在隔膜和导电背板之间形成腔室，并通过排气孔与硅衬底的空腔连接。 隔膜的第一侧由腔室暴露，并面向导电背板的突出结构，并且隔膜的第二侧暴露于环境空间。