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    Non-Volatile Memory Device
    25.
    发明申请
    Non-Volatile Memory Device 审中-公开
    非易失性存储器件

    公开(公告)号：US20120146120A1

    公开(公告)日：2012-06-14

    申请号：US13236368

    申请日：2011-09-19

    Applicant: Jung-In Han ,  Sang Eun Lee ,  Hyouk Sang Yun ,  Tong-Hyun Shin ,  June-Ui Song ,  Hae-Bum Lee ,  Bong-Yong Lee

    Inventor： Jung-In Han ,  Sang Eun Lee ,  Hyouk Sang Yun ,  Tong-Hyun Shin ,  June-Ui Song ,  Hae-Bum Lee ,  Bong-Yong Lee

    IPC: H01L29/78 ,  H01L27/088

    CPC classification number: H01L27/11521 ,  H01L27/11519

    Abstract: A non-volatile memory device includes memory cell active regions and common source active regions extending in parallel on a semiconductor substrate, a self aligned source active region disposed on the semiconductor substrate that intersects the memory cell active regions and the common source active regions and connects the memory cell active regions to the common source active regions, word lines disposed on the memory cell active regions and the common source active regions that intersect the memory cell active regions and the common source active regions, and memory cell transistors formed by the intersection of the word lines and the memory cell active regions, and common source line transistors formed by the intersection of the word lines and the common source active regions, wherein source and drain regions of each of the common source line transistors are separated from each other in the semiconductor substrate.

    Abstract translation: 非易失性存储器件包括在半导体衬底上平行延伸的存储器单元有源区和共同源极有源区，设置在半导体衬底上的自对准源有源区，与存储单元有源区和公共源有源区相交，并连接 存储单元有效区域到公共源极活性区域，位于存储单元有源区域上的字线和与存储单元有源区域和公共源极有源区域相交的公共源极有源区， 字线和存储单元有源区，以及由字线和公共源有源区的交叉形成的公共源极线晶体管，其中每个公共源极线晶体管的源极和漏极区彼此分离 半导体衬底。

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