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20 条记录 (耗时 0.02 秒)

    Power train for automatic transmission
    6.
    发明申请
    Power train for automatic transmission 有权
    自动变速箱动力传动系

    公开(公告)号：US20080004154A1

    公开(公告)日：2008-01-03

    申请号：US11512656

    申请日：2006-08-30

    申请人： Sung Hoon Park

    发明人： Sung Hoon Park

    IPC分类号： F16H3/62

    CPC分类号： F16H3/66 ,  F16H2200/0056 ,  F16H2200/0086 ,  F16H2200/201 ,  F16H2200/2046 ,  F16H2200/2048 ,  F16H2200/2051 ,  F16H2200/2097

    摘要： A power train for an automatic transmission having at realizes seven forward speeds and two reverse speeds may include: a first planetary gear set, a second planetary gear set, a third planetary gear, an input shaft, an output gear, and a transmission case. Utilizing arrangements of these components as described herein, such an automatic transmission may be provided with increased durability and more compact size.

    摘要翻译： 用于实现七个前进速度和两个倒档的自动变速器的动力传动系可以包括：第一行星齿轮组，第二行星齿轮组，第三行星齿轮，输入轴，输出齿轮和变速箱。 利用这里描述的这些部件的布置，这种自动变速器可以具有增加的耐久性和更紧凑的尺寸。

    Method for forming capacitor of semiconductor device
    7.
    发明授权
    Method for forming capacitor of semiconductor device 失效
    形成半导体器件电容器的方法

    公开(公告)号：US06893913B2

    公开(公告)日：2005-05-17

    申请号：US10603306

    申请日：2003-06-25

    申请人： Byoung Kwon Ahn ,  Sung Hoon Park

    发明人： Byoung Kwon Ahn ,  Sung Hoon Park

    IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242

    CPC分类号： H01L27/10855 ,  H01L21/3142 ,  H01L21/31637 ,  H01L28/90

    摘要： Disclosed is a method for forming a capacitor of a semiconductor device. The forming method comprises the step of forming an interlayer insulating film on a semiconductor substrate formed with a bit line. A contact plug to be in contact with the substrate is formed within the interlayer insulating film. A storage electrode is formed on the interlayer insulating film in such a manner that the storage electrode comes in contact with the contact plug. A dielectric film composed of a single composite film of Ta2O5(X)Y2O3(1−X) is also formed on the storage electrode according to ALD (Atomic Layer Deposition) technology. A diffusion barrier film is deposited on the dielectric film, and a plate electrode is formed on the diffusion barrier film. The present invention can provide a capacitor having sufficient capacitance necessary for a stable device operation by applying the Ta2O5(X)Y2O3(1−X) single composite film to the dielectric film.

    摘要翻译： 公开了一种形成半导体器件的电容器的方法。 形成方法包括在形成有位线的半导体衬底上形成层间绝缘膜的步骤。 在层间绝缘膜内形成与基板接触的接触塞。 在层间绝缘膜上形成存储电极，使得存储电极与接触插塞接触。 由Ta 2 O 5（X）Y 2 O 3（X）Y 2 O 3（X）的单一复合膜构成的电介质膜（ 1-X）也根据ALD（原子层沉积）技术形成在存储电极上。 在电介质膜上沉积扩散阻挡膜，在扩散阻挡膜上形成平板电极。 本发明可以提供一种电容器，其具有通过施加Ta 2 O 5（X）Y 2 O 2来稳定的器件操作所需的足够电容 3（1-X）单层复合膜到电介质膜。