公开(公告)号：US20150287912A1

公开(公告)日：2015-10-08

申请号：US14612323

申请日：2015-02-03

Applicant: Jong-Chul PARK ,  Byoung-Jae BAE ,  Shin-Jae KANG ,  Young-Seok CHOI

Inventor： Jong-Chul PARK ,  Byoung-Jae BAE ,  Shin-Jae KANG ,  Young-Seok CHOI

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

Abstract: In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An upper portion of the preliminary first free layer pattern is removed to form a first free layer pattern. A second free layer and a tunnel barrier layer are sequentially formed on the first free layer pattern. The second free layer is partially oxidized to form a second free layer pattern. A fixed layer structure is formed on the tunnel barrier layer.

Abstract translation: 在制造MRAM器件的方法中，在衬底上形成顺序堆叠的下电极和初步第一自由层图案。 去除初始第一自由层图案的上部以形成第一自由层图案。 在第一自由层图案上依次形成第二自由层和隧道势垒层。 第二自由层被部分氧化以形成第二自由层图案。 在隧道势垒层上形成固定层结构。

公开(公告)号：US08392632B2

公开(公告)日：2013-03-05

申请号：US12031284

申请日：2008-02-14

Applicant: Hye-Jeong Kim ,  Do-Young Lee ,  Hyun-Gu Lee ,  Byoung-Jae Bae ,  Young-Taek Kim

Inventor： Hye-Jeong Kim ,  Do-Young Lee ,  Hyun-Gu Lee ,  Byoung-Jae Bae ,  Young-Taek Kim

IPC: G06F3/00

CPC classification number: G06F13/387 ,  H04L69/22 ,  H04W80/04 ,  H04W88/02

Abstract: Provided is a method and an apparatus for processing data at a high speed by a UE for data communication. In the method, received data is divided into a header and payload information, which are then stored in different memories. In the method, header processing and payload data processing can be performed in parallel, and two memory devices can perform parallel processing without sharing a bus.

Abstract translation: 提供了一种用于数据通信的UE高速处理数据的方法和装置。 在该方法中，接收到的数据被分成头部和有效载荷信息，然后存储在不同的存储器中。 在该方法中，可以并行执行报头处理和有效负载数据处理，并且两个存储器件可以在不共享总线的情况下执行并行处理。

公开(公告)号：US20130005112A1

公开(公告)日：2013-01-03

申请号：US13429546

申请日：2012-03-26

Applicant: Byoung-jae Bae ,  Sung-lae Cho ,  Jin-il Lee ,  Hye-young Park ,  Do-hyung Kim

Inventor： Byoung-jae Bae ,  Sung-lae Cho ,  Jin-il Lee ,  Hye-young Park ,  Do-hyung Kim

IPC: H01L21/02 ,  C01B21/092

CPC classification number: H01L45/06 ,  C23C16/305 ,  C23C16/45534 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  H01L45/1691

Abstract: In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.

公开(公告)号：US20120326110A1

公开(公告)日：2012-12-27

申请号：US13495178

申请日：2012-06-13

Applicant: Gyu-Hwan OH ,  Byoung-Jae Bae ,  Dong-Hyun Im ,  Doo-Hwan Park

Inventor： Gyu-Hwan OH ,  Byoung-Jae Bae ,  Dong-Hyun Im ,  Doo-Hwan Park

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675 ,  H01L45/1683

Abstract: A phase change memory device includes an impurity region on a substrate, the impurity region being in an active region, a metal silicide pattern at least partially buried in the impurity region, a diode on the impurity region, a lower electrode on the diode, a phase change layer pattern on the lower electrode, and an upper electrode on the phase change layer pattern.

Abstract translation: 相变存储器件包括衬底上的杂质区域，有源区域中的杂质区域，至少部分地埋在杂质区域中的金属硅化物图案，杂质区域上的二极管，二极管上的下电极， 下电极上的相变层图案，以及相变层图案上的上电极。

公开(公告)号：US08263963B2

公开(公告)日：2012-09-11

申请号：US13082557

申请日：2011-04-08

Applicant: Young-Lim Park ,  Sung-Lae Cho ,  Byoung-Jae Bae ,  Jin-Il Lee ,  Hye-Young Park

Inventor： Young-Lim Park ,  Sung-Lae Cho ,  Byoung-Jae Bae ,  Jin-Il Lee ,  Hye-Young Park

IPC: H01L47/00 ,  H01L29/40

CPC classification number: H01L45/144 ,  C23C16/34 ,  C23C16/45536 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/126 ,  H01L45/143 ,  H01L45/1616 ,  H01L45/1683

Abstract: Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.

Abstract translation: 提供了一种相变存储器件和形成相变存储器件的方法。 该方法包括通过向基底提供反应性基团来形成相变材料层。 反应性基团可以包括相变材料和氮的前体。

公开(公告)号：US20120040508A1

公开(公告)日：2012-02-16

申请号：US13188981

申请日：2011-07-22

Applicant: Gyu-Hwan Oh ,  Sung-Lae Cho ,  Byoung-Jae Bae ,  Ik-Soo Kim ,  Dong-Hyun Im ,  Doo-Hwan Park ,  Kyoung-Ha Eom ,  Sung-Un Kwon ,  Chul-Ho Shin ,  Sang-Sup Jeong

Inventor： Gyu-Hwan Oh ,  Sung-Lae Cho ,  Byoung-Jae Bae ,  Ik-Soo Kim ,  Dong-Hyun Im ,  Doo-Hwan Park ,  Kyoung-Ha Eom ,  Sung-Un Kwon ,  Chul-Ho Shin ,  Sang-Sup Jeong

IPC: H01L47/00

CPC classification number: H01L45/1683 ,  H01L27/2463 ,  H01L45/06

Abstract: A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.

Abstract translation: 形成基板上的导电图案。 形成具有露出导电图案的开口的绝缘层。 底部电极形成在导电图案和开口的第一侧壁上。 在底部电极和开口的第二侧壁上形成间隔物。 间隔件和底部电极形成为低于绝缘层的顶表面。 数据存储插头形成在底部电极和间隔件上。 数据存储插头具有与底部电极的侧壁对准的第一侧壁和与间隔件的侧壁对准的第二侧壁。 在数据存储插头上形成位线。

公开(公告)号：US07803654B2

公开(公告)日：2010-09-28

申请号：US11862779

申请日：2007-09-27

Applicant: Jin-il Lee ,  Sung-lae Cho ,  Hye-young Park ,  Byoung-Jae Bae ,  Young-Lim Park

Inventor： Jin-il Lee ,  Sung-lae Cho ,  Hye-young Park ,  Byoung-Jae Bae ,  Young-Lim Park

IPC: H01L21/00

CPC classification number: H01L27/2409 ,  G11C13/0004 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1683

Abstract: Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. Formation of an integrated circuit memory cell include forming a first electrode on a substrate. An insulation layer is formed on the substrate with an opening that exposes at least a portion of a first electrode. An amorphous variable resistivity material is formed on the first electrode and extends away from the first electrode along sidewalls of the opening. A crystalline variable resistivity material is formed in the opening on the amorphous variable resistivity material. A second electrode is formed on the crystalline variable resistivity material.

Abstract translation: 公开了制造集成电路存储单元和集成电路存储单元的方法。 集成电路存储单元的形成包括在基板上形成第一电极。 在基板上形成具有露出第一电极的至少一部分的开口的绝缘层。 非晶可变电阻率材料形成在第一电极上，并沿着开口的侧壁远离第一电极延伸。 在非晶可变电阻率材料的开口中形成结晶可变电阻率材料。 在结晶可变电阻率材料上形成第二电极。

公开(公告)号：US07796648B2

公开(公告)日：2010-09-14

申请号：US12248408

申请日：2008-10-09

Applicant: Yang-Ick Joo ,  Soeng-Hun Kim ,  Byoung-Jae Bae

Inventor： Yang-Ick Joo ,  Soeng-Hun Kim ,  Byoung-Jae Bae

IPC: H04J3/24

CPC classification number: H04W28/065

Abstract: An apparatus and method for generating and parsing a MAC PDU in a mobile communication system are provided in which LCIDs of MAC SDUs to be multiplexed are checked, the length of an LF is determined for each of the MAC SDUs, referring to LF lengths predetermined for the LCIDs, a MAC header including the LCIDs and LFs of the determined lengths for the MAC SDUs is generated, and a MAC PDU is generated by attaching the MAC header to payload including the MAC SDUs. During the MAC header generation, if a padding size required for the MAC PDU generation calculated taking into account the absence of a last LF in the MAC header is larger than the length of the last LF, the last LF is included in the MAC header, the required padding size is recalculated, taking into account the inclusion of the last LF, and a padding is added according to the re-calculated padding size.

Abstract translation: 提供了一种用于在移动通信系统中生成和解析MAC PDU的装置和方法，其中检查要复用的MAC SDU的LCID，针对每个MAC SDU确定LF的长度，参考为 产生LCID，包括MAC SDU确定的长度的LCID和LF的MAC头，并且通过将MAC报头附加到包括MAC SDU的有效载荷来生成MAC PDU。 在MAC报头生成期间，如果考虑到MAC报头中没有最后一个LF计算的MAC PDU生成所需的填充大小大于最后一个LF的长度，则最后一个LF包含在MAC报头中， 考虑到最后一个LF的包含，重新计算所需的填充大小，并根据重新计算的填充大小添加填充。

公开(公告)号：US07727884B2

公开(公告)日：2010-06-01

申请号：US11779885

申请日：2007-07-19

Applicant: Byoung-Jae Bae ,  Sung-Lae Cho ,  Jin-Il Lee ,  Hye-Young Park ,  Ji-Eun Lim ,  Young-Lim Park

Inventor： Byoung-Jae Bae ,  Sung-Lae Cho ,  Jin-Il Lee ,  Hye-Young Park ,  Ji-Eun Lim ,  Young-Lim Park

IPC: H01L21/4763

CPC classification number: C23C16/30 ,  C23C16/305 ,  C23C16/45531 ,  C23C16/45553 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1683

Abstract: A method includes forming a phase change material layer on a substrate using a deposition process that employs a process gas. The process gas includes a germanium source gas, and the germanium source gas includes at least one of the atomic groups “—N═C═O”, “—N═C═S”, “—N═C═Se”, “—N═C═Te”, “—N═C═Po” and “—C≡N”.

Abstract translation: 一种方法包括使用采用处理气体的沉积工艺在衬底上形成相变材料层。 工艺气体包括锗源气体，锗源气体包括至少一个原子团“-N = C = O”，“-N = C = S”，“-N =C≡Se”，“ -N =C≡Te“，”-N =C≡Po“和”-C≡N“。

公开(公告)号：US20090075420A1

公开(公告)日：2009-03-19

申请号：US12212773

申请日：2008-09-18

Applicant: Byoung-jae BAE ,  Sung-lae CHO ,  Jin-Il LEE ,  Ju-hyung SEO ,  Hye-young PARK

Inventor： Byoung-jae BAE ,  Sung-lae CHO ,  Jin-Il LEE ,  Ju-hyung SEO ,  Hye-young PARK

IPC: H01L45/00

CPC classification number: H01L27/2436 ,  C23C16/305 ,  C23C16/45531 ,  C23C16/45553 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1683 ,  H01L45/1691

Abstract: The method of forming a Te-containing chalcogenide layer includes radicalizing a first source that contains Te to form a radicalized Te source, and forming a Te-containing chalcogenide layer by supplying the radicalized Te source into a reaction chamber. A method fabricating a phase change memory device includes loading a substrate on which a lower electrode is formed into a reaction chamber, radicalizing a first source that contains Te to form a radicalized Te source, forming a phase change material film containing Te on the lower electrode by supplying the radicalized Te source into the reaction chamber, and forming an upper electrode on the phase change material film.

Abstract translation: 形成含Te的硫族化物层的方法包括使包含Te的第一源自由基化以形成自由基化的Te源，并通过将自由基化的Te源供应到反应室中形成含Te的硫族化物层。 制造相变存储器件的方法包括：将其上形成有下电极的衬底加载到反应室中，使包含Te的第一源自由化以形成自由基化的Te源，在下电极上形成含有Te的相变材料膜 通过将激进化的Te源供应到反应室中，并在相变材料膜上形成上电极。