Abstract:
A method of manufacturing a thin film transistor (TFT), a TFT manufactured by the method, a method of manufacturing an organic light-emitting display apparatus that includes the TFT, a display including the TFT. By including a buffer layer below and an insulating layer above a silicon layer for the TFT, the silicon layer can be crystallized without being exposed to air, so that contamination can be prevented. Also, due to the overlying insulating layer, the silicon layer can be patterned without directly contacting photoresist. The result is a TFT with uniform and improved electrical characteristics, and an improved display apparatus.
Abstract:
A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer.
Abstract:
A method of crystallizing a silicon layer and a method of manufacturing a thin film transistor using the same, the method of crystallizing the silicon layer including forming an amorphous silicon layer on a substrate; performing a hydrophobicity treatment on a surface of the amorphous silicon layer so as to obtain a hydrophobic surface thereon; forming a metallic catalyst on the amorphous silicon layer that has been subjected to the hydrophobicity treatment; and heat-treating the amorphous silicon layer including the metallic catalyst thereon to crystallize the amorphous silicon layer into a polycrystalline silicon layer.
Abstract:
Provided is a method of identifying an ActiveX control distribution site, detecting a security vulnerability in an ActiveX control and immunizing the same. A security vulnerability existing in an ActiveX control may be automatically detected, effects brought on by the corresponding security vulnerability may be measured, and abuse of the detected security vulnerability in a user PC to be protected may be immediately prevented. Therefore, since the user PC may be protected regardless of a security patch, it is anticipated that security problems in the Internet environment caused by imprudent use of the ActiveX control may be significantly enhanced.
Abstract:
Provided is an Electromagnetic Bandgap (EBG) structure, particularly, a resonator and a bandpass filter having an overlay EBG structure, and a method of manufacturing the resonator. The resonator is manufactured by forming a transmission line and ground plates on a substrate, arranging a plurality of reflector units at regular intervals along the longitudinal direction of the transmission line, and removing at least one reflector among the plurality of reflectors, thus forming a common resonating mode. Therefore, since reflector units constructing capacitance components are separated from a substrate, it is possible to prevent electromagnetic waves from leaking out of the substrate and ensure a high Q characteristic in a high frequency environment due to a resonating unit formed between the reflector units.
Abstract:
An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.
Abstract:
An RFID reader control system and method is provided. A protocol for controlling an RFID reader and an RFID reader control unit of a mobile phone is defined. Messages, information, commands, responses, and notification are constructed and transmitted between the RPM reader and the RFID reader control unit.
Abstract:
A door opening device decreasing operational stages of a driving motor when opening a door and a refrigerator having the door opening device are disclosed. The door opening device selectively opens a first door and a second door and includes an operating member which selectively pressurizes the first door and the second door to be opened by rotation, a rotating cam including a plurality of protruding portions which contact the operating member to rotate the operating member and a plurality of depressed portions which are spaced apart from the operating member, the protruding portions and the depressed portions being formed alternately along a rotational direction of the rotating cam, a driving motor rotating the rotating cam in a forward direction and a reverse direction, and a return part returning the operating member to an initial position after at least one of the first door and the second door is opened.
Abstract:
An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.
Abstract:
A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.