公开(公告)号：US20020053358A1

公开(公告)日：2002-05-09

申请号：US09992191

申请日：2001-11-06

Applicant: Fujikoshi Machinery Corp.

Inventor： Yasuhide Denda ,  Yoshio Nakamura ,  Yoshinobu Nishimoto ,  Makoto Nakajima ,  Tsuyoshi Hasegawa ,  Norihiko Moriya

IPC: B08B003/02

CPC classification number: B24B37/08 ,  B08B3/024 ,  B08B15/04 ,  B08B2203/0229 ,  B24B53/017 ,  Y10S134/902

Abstract: The method of the present invention cleans abrasive faces of an upper abrasive plate and a lower abrasive plate of an abrasive machine. The method is executed by a cleaning device including: a nozzle for jetting water; a brush for preventing the jetted water from scattering in the air, the brush enclosing the nozzle; and another brush for closing a gap between the preventing brush and an outer edge of the upper abrasive plate, the method is characterized by the steps of: jetting water from the nozzle toward the abrasive face of the upper abrasive plate; moving the nozzle toward the outer edge of the upper abrasive plate; and closing the gap by the closing brush when the gap is formed between the preventing brush and the outer edge of the upper abrasive plate.

Abstract translation: 本发明的方法清洗研磨机的上磨料板和下研磨板的磨料面。 该方法由清洁装置执行，该清洁装置包括：用于喷射水的喷嘴; 用于防止喷射水在空气中飞散的刷子，刷子包围喷嘴; 以及用于封闭防磨刷和上磨料板的外边缘之间的间隙的另一刷子，其特征在于以下步骤：从喷嘴向上磨料板的研磨面喷射水; 将喷嘴移向上磨料板的外边缘; 并且当在防磨刷和上磨料板的外边缘之间形成间隙时，通过闭合刷闭合间隙。

公开(公告)号：US20010003883A1

公开(公告)日：2001-06-21

申请号：US09737006

申请日：2000-12-14

Applicant: Fujikoshi Machinery Corp.

Inventor： Yasuhide Denda ,  Hisato Kuroiwa ,  Masanori Furukawa ,  Yoshio Nakamura

IPC: B24B007/04

CPC classification number: B24B37/30 ,  H01L21/30625

Abstract: The abrasive machine is capable of preventing deformation and bad abrasion of an abrasive cloth, maintaining flatness of an abrasive face of an abrasive plate and improving abrading accuracy. The abrasive machine comprises the abrasive plate and a holding unit for holding a work piece. In the holding unit, an inner head has a first concave section. An outer head has a second concave section. A holding plate is provided in the first concave section. An elastic holding member forms a first chamber. An outer enclosing member is provided to the outer head. An inner enclosing member is provided between the outer enclosing member and the inner head. A pressing member presses the abrasive face of the abrasive plate and encloses the holding plate. An elastic ring member a second chamber. A pressurizing unit pressurizes the chambers so as to press the work piece and the pressing member onto the abrasive face.

Abstract translation: 研磨机能够防止研磨布的变形和磨损不良，保持研磨板的研磨面的平坦度并提高研磨精度。 研磨机包括研磨板和用于保持工件的保持单元。 在保持单元中，内头部具有第一凹部。 外头部具有第二凹部。 保持板设置在第一凹部中。 弹性保持构件形成第一室。 外包装件设置在外头部。 内封闭构件设置在外封闭构件和内头之间。 按压构件按压研磨板的研磨面并包围保持板。 弹性环构件，第二室。 加压单元对腔室加压，以将工件和按压构件按压到研磨面上。

公开(公告)号：US20250036107A1

公开(公告)日：2025-01-30

申请号：US18756329

申请日：2024-06-27

Applicant: Fujikoshi Machinery Corp.

Inventor： Tomohito Nakazawa

IPC: G05B19/418 ,  G06F21/60

Abstract: A control device for controlling operations of semiconductor wafer production devices for each of target wafers includes a storage unit, a command data generation unit, a reception data generation unit, and a communication unit, the command data generation unit associates transmission destination address with an operation recipe to generate command data representing an operation condition of one semiconductor wafer production device which is to operate or in operation, and the reception data generation unit obtains log data at a predetermined time interval from the semiconductor wafer production device via the communication unit, associate the log data with second steps of log items in series to generate reception data representing an operation state of the semiconductor wafer production device in operation or a wafer state.

公开(公告)号：US12209853B2

公开(公告)日：2025-01-28

申请号：US17604553

申请日：2020-04-09

Applicant: Fujikoshi Machinery Corp.

Inventor： Chihiro Miyagawa ,  Kazutaka Shibuya ,  Kiyohito Aoki

IPC: G01B11/06 ,  G01N21/95 ,  H01L21/304 ,  H01L21/66

Abstract: A non-contact apparatus for measuring wafer thickness includes a monolithic wavelength sweeping semiconductor laser light source having a laser source, a laser control unit that controls the laser source, and a processor to control the laser source to oscillate laser light having a wavelength that changes with a setting profile relative to time; an optical system that guides and emits the laser light onto a wafer; a detection unit that detects an interference light signal of reflected light; an A/D converter that converts the interference light signal detected by the detection unit into a digital signal; and a calculation unit that calculates a thickness of the wafer by analyzing the digital signal from the A/D converter. The processor causes the laser control unit to operate with a clock signal, and to oscillate laser light that performs wavelength-sweeping with the setting profile relative to the time, from the laser source. The A/D converts the interference light signal by generating a sampling clock in synchronization with the clock signal or directly using the clock signal as a sampling clock.

公开(公告)号：US11883924B2

公开(公告)日：2024-01-30

申请号：US18341115

申请日：2023-06-26

Applicant: Fujikoshi Machinery Corp.

Inventor： Masashi Maruta

IPC: B24B37/08 ,  B24B37/005

CPC classification number: B24B37/08 ,  B24B37/005

Abstract: A double-sided polishing apparatus includes: a lower surface plate; an upper surface plate; and a carrier disposed between the lower surface plate and the upper surface plate and holding a disk-shaped workpiece, wherein the carrier is configured to rotate about a center of the lower surface plate and the upper surface plate and to rotate about a center of the carrier, the double-sided polishing apparatus includes a thickness measuring sensor at a fixed position above the upper surface plate or below the lower surface plate or at a movable position in an upper portion of the upper surface plate or a lower portion of the lower surface plate, the carrier includes circular perforations each holding the workpiece at a position eccentric to the center of the carrier, when a central position of any of the perforations preset by a user is defined as a first reference position, with a distance between a center of the upper surface plate or the lower surface plate and a center of any of the perforations preset by the user being shortest or longest, and a position apart from the first reference position by half of a first distance in a direction of the center of the carrier is defined as a second reference position, with the first distance being a predetermined length within 30% of a radius of the perforation, then the thickness measuring sensor is provided in a range of the first distance about the second reference position in a plan view, and the thickness measuring sensor is configured to measure a thickness of the workpiece in a state in which the workpiece is held in the perforation, through a measuring hole provided on the upper surface plate or the lower surface plate closer to a side on which the thickness measuring sensor is disposed.

公开(公告)号：US20230415298A1

公开(公告)日：2023-12-28

申请号：US18341115

申请日：2023-06-26

Applicant: Fujikoshi Machinery Corp.

Inventor： Masashi MARUTA

IPC: B24B37/08 ,  B24B37/005

CPC classification number: B24B37/08 ,  B24B37/005

Abstract: A double-sided polishing apparatus includes: a lower surface plate; an upper surface plate; and a carrier disposed between the lower surface plate and the upper surface plate and holding a disk-shaped workpiece, wherein the carrier is configured to rotate about a center of the lower surface plate and the upper surface plate and to rotate about a center of the carrier, the double-sided polishing apparatus includes a thickness measuring sensor at a fixed position above the upper surface plate or below the lower surface plate or at a movable position in an upper portion of the upper surface plate or a lower portion of the lower surface plate, the carrier includes circular perforations each holding the workpiece at a position eccentric to the center of the carrier, when a central position of any of the perforations preset by a user is defined as a first reference position, with a distance between a center of the upper surface plate or the lower surface plate and a center of any of the perforations preset by the user being shortest or longest, and a position apart from the first reference position by half of a first distance in a direction of the center of the carrier is defined as a second reference position, with the first distance being a predetermined length within 30% of a radius of the perforation, then the thickness measuring sensor is provided in a range of the first distance about the second reference position in a plan view, and the thickness measuring sensor is configured to measure a thickness of the workpiece in a state in which the workpiece is held in the perforation, through a measuring hole provided on the upper surface plate or the lower surface plate closer to a side on which the thickness measuring sensor is disposed.

公开(公告)号：US20220243358A1

公开(公告)日：2022-08-04

申请号：US17555680

申请日：2021-12-20

Applicant: Fujikoshi Machinery Corp. ,  SHINSHU UNIVERSITY

Inventor： Keigo HOSHIKAWA ,  Toshinori TAISHI ,  Takumi KOBAYASHI ,  Yoshio OTSUKA ,  Etsuko OHBA

IPC: C30B11/00 ,  C30B29/16

Abstract: A production apparatus for a metal oxide single crystal according to one aspect of the present invention includes: a furnace having an interior heated to a temperature of 1,500° C. or more in an oxidative atmosphere, a heater heating the interior of the furnace, an inlet pipe being disposed in a lower part of the furnace and connecting an interior and an exterior of the furnace, an exhaust pipe being disposed in an upper part of the furnace and connecting an interior and an exterior of the furnace, a duct being disposed above the furnace, and an exhaust fan and a harmful substance elimination device being disposed in the middle of the duct.

公开(公告)号：US10471565B2

公开(公告)日：2019-11-12

申请号：US15224064

申请日：2016-07-29

Applicant: FUJIKOSHI MACHINERY CORP.

Inventor： Kazutaka Shibuya ,  Yoshio Nakamura

IPC: B24B37/04 ,  H01L21/306 ,  B24B57/02 ,  C23F1/08 ,  C23F1/12 ,  C23F1/14 ,  H01L21/67 ,  H01J37/32 ,  H01L21/02 ,  H01L29/16 ,  H01L29/20

Abstract: The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.

公开(公告)号：US20170306521A1

公开(公告)日：2017-10-26

申请号：US15470547

申请日：2017-03-27

Applicant: SHINSHU UNIVERSITY ,  Fujikoshi Machinery Corp.

Inventor： Keigo HOSHIKAWA ,  Takumi KOBAYASHI ,  Etsuko OHBA ,  Jun YANAGISAWA

IPC: C30B11/00 ,  C30B29/16 ,  H01L21/02

CPC classification number: C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B29/16 ,  H01L21/02565 ,  H01L21/02625

Abstract: The apparatus for producing a gallium oxide crystal relating to the invention contains a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater, the crucible is a crucible containing a Pt-based alloy, the furnace body has an inner wall that is formed as a heat-resistant wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, and the ring shaped heat-resistant members each contain plural divided pieces that are joined to each other to the ring shape.

公开(公告)号：US20170304986A1

公开(公告)日：2017-10-26

申请号：US15512939

申请日：2015-09-24

Applicant: SHIN-ETSU HANDOTAI CO., LTD. ,  FUJIKOSHI MACHINERY CORP.

Inventor： Junichi UENO ,  Michito SATO ,  Kaoru ISHII ,  Hiromi KISHIDA ,  Yosuke KANAI ,  Yuya NAKANISHI

IPC: B24B37/005 ,  H01L21/304 ,  B24B37/10

CPC classification number: B24B37/0053 ,  B24B37/10 ,  B24B37/34 ,  B24B49/12 ,  H01L21/304

Abstract: A polishing apparatus includes: a plurality of polishing heads for holding a wafer, a polishing pad for polishing the wafer, a rotatable turn table having the polishing pad attached thereto, a turn table driving mechanism for rotating the turn table, a plurality of wafer-detecting sensors for detecting coming off of the wafer from the polishing head during polishing, wherein the polishing apparatus has the wafer-detecting sensor disposed above peripheral portions of the respective polishing heads and on each downstream side in a rotation direction of the turn table with respect to the respective polishing heads. The polishing apparatus can detect coming off of a wafer from a polishing head during polishing more rapidly, and can prevent a breakage of the wafer thereby.