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公开(公告)号：USRE44712E1
公开(公告)日：2014-01-21
申请号：US13288586
申请日：2011-11-03
申请人： Joseph M. Ranish , Khurshed Sorabji
发明人： Joseph M. Ranish , Khurshed Sorabji
IPC分类号： H01J5/48
CPC分类号： H01K1/58 , H01K1/46 , H01L21/67115
摘要： A lamp assembly adapted for use in a substrate thermal processing chamber to heat the substrate to temperatures up to at least about 1100° C. is disclosed. In one embodiment, the lamp assembly comprises a bulb enclosing at least one radiation generating filament attached to a pair of leads, a lamp base configured to receive the pair of leads, a sleeve having a wall thickness of at least about 0.013 inches and a potting compound having a thermal conductivity greater than about 100 W/(K-m).
摘要翻译： 公开了适用于基板热处理室以将基板加热至高达至少约1100℃的温度的灯组件。 在一个实施例中，灯组件包括封闭连接到一对引线的至少一个辐射生成细丝的灯泡，被配置为容纳一对引线的灯座，具有至少约0.013英寸的壁厚的套管和一个灌封 具有大于约100W /（Km）的热导率的化合物。
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22.发明申请Apparatus and Method for Improved Control of Heating and Cooling of Substrates 审中-公开改善基板加热和冷却控制的装置和方法公开(公告)号：US20140004716A1
公开(公告)日：2014-01-02
申请号：US14012473
申请日：2013-08-28
IPC分类号： H01L21/263
CPC分类号： H01L21/2636 , H01L21/67098 , H01L21/67115
摘要： Methods and apparatus for processing substrates and controlling the heating and cooling of substrates are described. A radiation source providing radiation in a first range of wavelengths heats the substrate within a predetermined temperature range, the substrate being absorptive of radiation in a second range of wavelengths within the first range of wavelengths and within the predetermined temperature rang. A filter prevents at least a portion of radiation within the second wavelength range from reaching the substrate.
摘要翻译： 描述了用于处理衬底和控制衬底的加热和冷却的方法和设备。 提供在第一波长范围内的辐射的辐射源将衬底加热到预定温度范围内，所述衬底吸收第一波长范围内的第二波长范围内且在预定温度范围内的辐射。 滤光器防止第二波长范围内的至少一部分辐射到达基板。
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公开(公告)号：US20130178072A1
公开(公告)日：2013-07-11
申请号：US13674737
申请日：2012-11-12
申请人： BALASUBRAMANIAN RAMACHANDRAN , Tae Jung Kim , Jung Hoon Sun , Joung Woo Lee , Hwa Joong Lim , Sang Phil Lee , Joseph M. Ranish
发明人： BALASUBRAMANIAN RAMACHANDRAN , Tae Jung Kim , Jung Hoon Sun , Joung Woo Lee , Hwa Joong Lim , Sang Phil Lee , Joseph M. Ranish
IPC分类号： B08B5/00 , H01L21/324
CPC分类号： B08B5/00 , B08B7/00 , B08B7/0071 , H01L21/324
摘要： A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.
摘要翻译： 一种清洗用于退火掺杂晶圆基板的室的方法。 在一个实施方案中，该方法提供了在通过使一种或多种挥发气体进入退火室中的掺杂衬底的退火处理之后去除在退火室中沉积的掺杂剂，施加热量以挥发退火室中沉积的掺杂剂，并将该室排出 从退火室中除去挥发的掺杂剂。
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公开(公告)号：US08367983B2
公开(公告)日：2013-02-05
申请号：US12483770
申请日：2009-06-12
CPC分类号： H01L21/67115
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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公开(公告)号：US08314371B2
公开(公告)日：2012-11-20
申请号：US12611958
申请日：2009-11-04
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
IPC分类号： H01B1/00
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.
摘要翻译： 描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。 所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。
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公开(公告)号：US20120231633A1
公开(公告)日：2012-09-13
申请号：US13046261
申请日：2011-03-11
申请人： Maurice E. Ewert , Anantha K. Subramani , Umesh M. Kelkar , Chandrasekhar Balasubramanyam , Joseph M. Ranish
发明人： Maurice E. Ewert , Anantha K. Subramani , Umesh M. Kelkar , Chandrasekhar Balasubramanyam , Joseph M. Ranish
CPC分类号： C23C14/5806 , C23C14/34 , C23C14/3435 , C23C14/541 , C23C16/4581 , C23C16/481 , H01J37/3411 , H01J37/3488 , H01L21/02104 , H01L21/28518 , H01L21/2855 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L21/68742 , H01L21/76882
摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.
摘要翻译： 公开了用于处理基材的方法和装置。 该装置是双功能处理室，其可以在基板上进行材料处理和热处理。 该室具有设置在处理位置和室的输送位置之间的环形辐射源。 提升销具有足够的长度以将衬底保持在处理位置，同时衬底支撑件降低到辐射源平面下方以提供衬底的辐射加热。 一种处理在其第一表面中形成的孔的衬底的方法包括在孔的第一表面上沉积材料并通过加热衬底的与第一表面相对的第二表面来回流材料。 然后可以沉积第二种材料，部分地或完全地填充孔。 或者，可以执行循环沉积/回流工艺。
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公开(公告)号：US08249436B2
公开(公告)日：2012-08-21
申请号：US12434239
申请日：2009-05-01
IPC分类号： A21B2/00
CPC分类号： H01L22/26 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L22/10
摘要： Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.
摘要翻译： 本发明的实施例提供了用于降低热处理期间的不均匀性的装置和方法。 一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件被配置为使衬底旋转;传感器组件，被配置为测量衬底的温度 多个位置，以及一个或多个脉冲加热元件，其配置成向处理体积提供脉冲能量。
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公开(公告)号：US20110065276A1
公开(公告)日：2011-03-17
申请号：US12720942
申请日：2010-03-10
申请人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Wei Liu , Johanes F. Swenberg , Shiyu Sun
发明人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Wei Liu , Johanes F. Swenberg , Shiyu Sun
IPC分类号： H01L21/311 , H01L21/3065
CPC分类号： H01L21/76232 , H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
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公开(公告)号：US07867868B2
公开(公告)日：2011-01-11
申请号：US11681343
申请日：2007-03-02
申请人： Joseph M. Ranish , Bruce E. Adams
发明人： Joseph M. Ranish , Bruce E. Adams
IPC分类号： H01L21/336
CPC分类号： H01L21/67115 , H01L21/26513 , H01L21/268 , H01L21/2686 , H01L21/324 , H01L21/6715 , H01L29/66575
摘要： The present invention generally provides an absorber layer using carbon based materials with increased and stabled thermal absorption coefficient and economical methods to produce such an absorber layer. One embodiment of the present invention provides a method for processing a substrate comprising depositing an absorber layer on a top surface of the substrate, wherein the substrate is maintained under a first temperature, annealing the substrate in a thermal processing chamber, wherein the substrate is heated to a second temperature, and the second temperature is higher than the first temperature, and removing the absorber layer from the substrate.
摘要翻译： 本发明通常提供一种使用具有增加和稳定的热吸收系数的碳基材料和生产这种吸收层的经济方法的吸收层。 本发明的一个实施方案提供了一种处理衬底的方法，包括在衬底的顶表面上沉积吸收层，其中将衬底保持在第一温度下，在热处理室中退火衬底，其中衬底被加热 到第二温度，第二温度高于第一温度，并且从基板除去吸收体层。
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公开(公告)号：US20090289053A1
公开(公告)日：2009-11-26
申请号：US12483770
申请日：2009-06-12
CPC分类号： H01L21/67115
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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