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    NOP instruction compressing apparatus and method in a VLIW machine
    21.
    发明授权
    NOP instruction compressing apparatus and method in a VLIW machine 有权
    NOI指令压缩装置和方法在VLIW机器中

    公开(公告)号：US09286074B2

    公开(公告)日：2016-03-15

    申请号：US12912533

    申请日：2010-10-26

    Applicant: Tai-Song Jin ,  Dong-Hoon Yoo ,  Bernhard Egger ,  Won-Sub Kim ,  Jin-Seok Lee ,  Sun-Hwa Kim ,  Hee-Jin Ahn

    Inventor： Tai-Song Jin ,  Dong-Hoon Yoo ,  Bernhard Egger ,  Won-Sub Kim ,  Jin-Seok Lee ,  Sun-Hwa Kim ,  Hee-Jin Ahn

    IPC: G06F9/318 ,  G06F9/38 ,  G06F9/30

    CPC classification number: G06F9/3822 ,  G06F9/30076 ,  G06F9/3017 ,  G06F9/3853

    Abstract: An instruction compressing apparatus and method for a parallel processing computer such as a very long instruction word (VLIW) computer, are provided. The instruction compressing apparatus includes a bundle code generating unit, an instruction compressing unit, and an instruction converting unit. The bundle code generating unit may generate a bundle code in response to an input of instructions to be compressed. The bundle code may indicate whether a current instruction group is terminated, and also whether an instruction group following the current instruction group is a no-operation (NOP) instruction group. The instruction compressing unit may remove a NOP instruction and/or a NOP instruction group from the input instructions according to the generated bundle code. The instruction converting unit may include the generated bundle code in the remaining instructions which have not been removed by the instruction compressing unit.

    Abstract translation: 提供了一种用于并行处理计算机例如非常长的指令字（VLIW）计算机的指令压缩装置和方法。 指令压缩装置包括束代码生成单元，指令压缩单元和指令转换单元。 捆绑代码生成单元可以响应于要压缩的指令的输入而生成捆绑代码。 捆绑码可以指示当前指令组是否终止，以及当前指令组之后的指令组是否是无操作（NOP）指令组。 指令压缩单元可以根据所生成的包代码从输入指令中去除NOP指令和/或NOP指令组。 指令转换单元可以包括尚未被指令压缩单元去除的剩余指令中的生成的捆绑代码。

    Apparatus for manufacturing polysilicon based electron-beam melting using dummy bar and method of manufacturing polysilicon using the same
    22.
    发明授权
    Apparatus for manufacturing polysilicon based electron-beam melting using dummy bar and method of manufacturing polysilicon using the same 有权
    使用虚拟棒制造基于多晶硅的电子束熔化的装置和使用其制造多晶硅的方法

    公开(公告)号：US08997524B2

    公开(公告)日：2015-04-07

    申请号：US13464488

    申请日：2012-05-04

    Applicant: Bo Yun Jang ,  Jin Seok Lee ,  Joon Soo Kim ,  Young Soo Ahn

    Inventor： Bo Yun Jang ,  Jin Seok Lee ,  Joon Soo Kim ,  Young Soo Ahn

    IPC: C01B33/037 ,  C30B13/22

    CPC classification number: C01B33/037 ,  B01J6/007 ,  B01J19/085 ,  B01J2219/00135 ,  C30B13/22

    Abstract: Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.

    Abstract translation: 制造高纯度多晶硅的方法和装置。 该装置包括真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 硅熔融单元，其放置在对应于第一电子枪的第一电子束照射区域上，并且通过第一电子束将粉末原料硅熔化; 以及放置在对应于第二电子枪的第二电子束照射区域上的单向凝固单元。 单向凝固单元在其中设置有向下驱动的起始块，以沿向下方向转移熔融硅，并在其下侧形成有冷却通道。 起始块包括具有连接到虚拟棒的上部的硅按钮的虚拟棒。

    Apparatus for manufacturing silicon substrate for solar cell using continuous casting and having contacting solidification and stress relieving regions
    23.
    发明授权
    Apparatus for manufacturing silicon substrate for solar cell using continuous casting and having contacting solidification and stress relieving regions 有权
    用于使用连续铸造制造用于太阳能电池的硅衬底并具有接触固化和应力消除区域的装置

    公开(公告)号：US08968471B2

    公开(公告)日：2015-03-03

    申请号：US13115588

    申请日：2011-05-25

    Applicant: Bo-Yun Jang ,  Jin-Seok Lee ,  Joon-Soo Kim

    Inventor： Bo-Yun Jang ,  Jin-Seok Lee ,  Joon-Soo Kim

    IPC: C30B15/06 ,  B22D11/045 ,  C01B33/037 ,  C30B11/00 ,  C30B28/10 ,  C30B29/06

    CPC classification number: B22D11/045 ,  C01B33/037 ,  C30B11/001 ,  C30B11/003 ,  C30B28/10 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T117/1092

    Abstract: The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate.

    Abstract translation: 本公开内容提供一种使用连续铸造制造用于太阳能电池的硅衬底的装置，其可以提高硅衬底的质量，生产率和能量转换效率。 该装置包括：坩埚单元，被配置为接收原料硅并具有排出口;加热单元，设置在坩埚单元的外壁和外部底表面，并加热坩埚单元以形成熔融硅;铸造单元， 硅进入硅衬底，冷却单元快速冷却硅衬底;以及转移单元，其设置在冷却单元的一端并转移硅衬底。 铸造单元包括具有限定在其中以与排出口水平连接的铸造空间的铸造单元主体和预热铸造单元主体以控制硅基板的凝固温度的辅助加热机构。

    Apparatus for manufacturing high purity polysilicon using electron-beam melting and method of manufacturing high purity polysilicon using the same
    25.
    发明授权
    Apparatus for manufacturing high purity polysilicon using electron-beam melting and method of manufacturing high purity polysilicon using the same 有权
    使用电子束熔化制造高纯度多晶硅的装置和使用其制造高纯度多晶硅的方法

    公开(公告)号：US08794035B2

    公开(公告)日：2014-08-05

    申请号：US13464416

    申请日：2012-05-04

    Applicant: Bo Yun Jang ,  Jin Seok Lee ,  Joon Soo Kim ,  Young Soo Ahn

    Inventor： Bo Yun Jang ,  Jin Seok Lee ,  Joon Soo Kim ,  Young Soo Ahn

    IPC: C01B33/037 ,  C30B13/22

    CPC classification number: C01B33/037 ,  C30B11/003 ,  C30B13/22 ,  C30B29/06

    Abstract: Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.

    Abstract translation: 用于制造高纯度多晶硅的装置和方法。 该装置包括保持真空气氛的真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 放置在对应于第一电子枪的第一电子束照射区域上的硅熔融单元，其中粉状原料硅由第一电子束放置和熔化; 以及放置在与第二电子枪相对应的第二电子束照射区域上的单向凝固单元，并且经由流道连接到硅熔融单元。 单向凝固单元在其下部形成有冷却通道，并且在其中设置有向下驱动的起始块。

    Processing apparatus
    26.
    发明授权
    Processing apparatus 有权
    处理装置

    公开(公告)号：US08758513B2

    公开(公告)日：2014-06-24

    申请号：US11639224

    申请日：2006-12-15

    Applicant: Jin Seok Lee ,  Hyuk Sang Yoon ,  Hwan Kyu Yoo ,  Byeong Eok Hwang

    Inventor： Jin Seok Lee ,  Hyuk Sang Yoon ,  Hwan Kyu Yoo ,  Byeong Eok Hwang

    IPC: C23F1/00 ,  C23C16/00

    CPC classification number: H01L21/67173 ,  C23C14/50 ,  C23C14/568

    Abstract: A processing apparatus includes a loading chamber; a buffer chamber connected to the loading chamber; a first process chamber connected to the buffer chamber; and an unloading chamber connected to the first process chamber, wherein a processing path through the processing apparatus is a forward in-line path in a direction through the loading chamber, the buffer chamber, the first process chamber, and the unloading chamber.

    Abstract translation: 一种处理装置，包括装载室; 连接到所述装载室的缓冲室; 连接到缓冲室的第一处理室; 以及连接到所述第一处理室的卸载室，其中通过所述处理装置的处理路径是沿着穿过所述装载室，所述缓冲室，所述第一处理室和所述卸载室的方向的前向一线路径。

    ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    27.
    发明申请
    ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    用于液晶显示装置的阵列基板及其制造方法

    公开(公告)号：US20140099736A1

    公开(公告)日：2014-04-10

    申请号：US14102917

    申请日：2013-12-11

    Applicant: Sang-Hyup LEE ,  Jin-Seok LEE

    Inventor： Sang-Hyup LEE ,  Jin-Seok LEE

    IPC: G02F1/1362

    CPC classification number: G02F1/136259 ,  G02F2001/13606 ,  G02F2001/136263 ,  G02F2001/136268 ,  G02F2001/13629 ,  G02F2201/40 ,  H01L27/124 ,  H01L27/1259

    Abstract: A liquid crystal display device includes an array substrate and a color filter substrate, a plurality of gate lines and a plurality of data lines formed on the array substrate such that the gate lines and the data lines intersect each other to define a plurality of pixel regions, a plurality of thin film transistors formed at respective intersections of the gate lines and the data lines, a liquid crystal layer interposed between the array and color filter substrates, and a plurality of repair patterns formed on the first substrate. Each of the plurality of the repair patterns crosses a corresponding one of the data lines, and is along and adjacent to a corresponding one of the gate lines, such that the repair pattern includes protruding ends that protrude from the corresponding data line to repair a defect on the pixel regions.

    Abstract translation: 液晶显示装置包括阵列基板和滤色器基板，形成在阵列基板上的多条栅极线和多条数据线，使得栅极线和数据线彼此相交以限定多个像素区域 形成在栅极线和数据线的各交叉点处的多个薄膜晶体管，插入在阵列和滤色器基板之间的液晶层，以及形成在第一基板上的多个修复图案。 多个修复图案中的每一个都与相应的数据线交叉，并且与相应的一条栅极线相邻并相邻，使得修复图案包括从对应的数据线突出以修复缺陷的突出端 在像素区域上。

    APPARATUS FOR MANUFACTURING POLYSILICON BASED ELECTRON-BEAM MELTING USING DUMMY BAR AND METHOD OF MANUFACTURING POLYSILICON USING THE SAME
    28.
    发明申请
    APPARATUS FOR MANUFACTURING POLYSILICON BASED ELECTRON-BEAM MELTING USING DUMMY BAR AND METHOD OF MANUFACTURING POLYSILICON USING THE SAME 有权
    用于制造基于多晶硅的电子束熔融的装置和使用其制造多晶硅的方法

    公开(公告)号：US20130291596A1

    公开(公告)日：2013-11-07

    申请号：US13464488

    申请日：2012-05-04

    Applicant: Bo Yun Jang ,  Jin Seok Lee ,  Joon Soo Kim ,  Young Soo Ahn

    Inventor： Bo Yun Jang ,  Jin Seok Lee ,  Joon Soo Kim ,  Young Soo Ahn

    IPC: C01B33/02 ,  B01J19/08 ,  C01B33/037

    CPC classification number: C01B33/037 ,  B01J6/007 ,  B01J19/085 ,  B01J2219/00135 ,  C30B13/22

    Abstract: Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.

    Abstract translation: 制造高纯度多晶硅的方法和装置。 该装置包括真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 硅熔融单元，其放置在对应于第一电子枪的第一电子束照射区域上，并且通过第一电子束将粉末原料硅熔化; 以及放置在对应于第二电子枪的第二电子束照射区域上的单向凝固单元。 单向凝固单元在其中设置有向下驱动的起始块，以沿向下方向转移熔融硅，并在其下侧形成有冷却通道。 起始块包括具有连接到虚拟棒的上部的硅按钮的虚拟棒。

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