公开(公告)号：US06828610B2

公开(公告)日：2004-12-07

申请号：US10626447

申请日：2003-07-23

Applicant: Thomas Anthony ,  Lung Tran ,  Manish Sharma

Inventor： Thomas Anthony ,  Lung Tran ,  Manish Sharma

IPC: H01L31062

CPC classification number: G11C11/16 ,  Y10S257/902

Abstract: A magnetic tunnel junction is fabricated by forming pinned and sense layers; and re-setting a magnetization vector of at least one of the layers.

Abstract translation: 通过形成固定和感应层制造磁性隧道结; 并重新设定至少一层的磁化矢量。

公开(公告)号：US06781906B2

公开(公告)日：2004-08-24

申请号：US10299501

申请日：2002-11-19

Applicant: Frederick Perner ,  Lung Tran

Inventor： Frederick Perner ,  Lung Tran

IPC: G11C702

CPC classification number: G11C7/062 ,  G11C7/067 ,  G11C11/16 ,  G11C2207/063 ,  G11C2207/2254

Abstract: A memory cell sensor including an integrator for sensing a logical state of a memory cell. An integrator calibration circuit provides a corrective bias to the integrator, the corrective bias being based upon a difference between an initial integrator output value and a reference value. Another embodiment includes a method of sensing a logical state of a memory cell. The memory cell being sensed by an integrator. The method includes determining an initial integrator output value when a corrective bias of the integrator is zeroed, generating a correction value by comparing the initial integrator output value to a reference value, and applying the correction value to the corrective bias of the integrator.

Abstract translation: 一种存储单元传感器，包括用于感测存储单元的逻辑状态的积分器。 积分器校准电路为积分器提供校正偏置，校正偏置基于初始积分器输出值和参考值之间的差异。 另一个实施例包括一种感测存储器单元的逻辑状态的方法。 存储器单元被积分器感测。 该方法包括当积分器的校正偏置为零时确定初始积分器输出值，通过将初始积分器输出值与参考值进行比较产生校正值，并将校正值应用于积分器的校正偏置。

公开(公告)号：US06750491B2

公开(公告)日：2004-06-15

申请号：US10029694

申请日：2001-12-20

Applicant: Manish Sharma ,  Thomas C. Anthony ,  Lung Tran

Inventor： Manish Sharma ,  Thomas C. Anthony ,  Lung Tran

IPC: H01L2976

CPC classification number: G11C11/16

Abstract: A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.

Abstract translation: 磁存储器件包括第一和第二铁磁层。 每个铁磁层具有可以在两个方向中的任一方向上取向的磁化。 第一铁磁层具有比第二铁磁层更高的矫顽力。 磁存储器件还包括用于与第二铁磁层形成闭合磁通路径的结构。

公开(公告)号：US06456524B1

公开(公告)日：2002-09-24

申请号：US10000636

申请日：2001-10-31

Applicant: Frederick A. Perner ,  Lung Tran

Inventor： Frederick A. Perner ,  Lung Tran

IPC: G11C1100

CPC classification number: G11C11/5678 ,  G11C11/16 ,  G11C11/5692 ,  G11C13/0004

Abstract: A data storage device that includes a novel resistive cross point memory cell array and a method of making the data storage device are described. The resistive cross point memory cell array enables high-density fabrication and high-speed operation with isolation diodes that have practical dimensions and current density characteristics. In addition, the data storage device includes a novel equipotential isolation circuit that substantially avoids parasitic currents that otherwise might interfere with the sensing of the resistance state of the memory cells. In one aspect, the memory cells of the resistive cross point memory cell array are arranged into multiple groups of two or more memory cells. The memory cells of each group are connected between a respective word line and a common isolation diode that is coupled to a bit line.

Abstract translation: 描述了包括新型电阻交叉点存储单元阵列的数据存储装置和制造数据存储装置的方法。 电阻式交叉点存储单元阵列能够实现具有实际尺寸和电流密度特性的隔离二极管的高密度制造和高速操作。 此外，数据存储装置包括一种新颖的等电位隔离电路，其基本上避免了寄生电流，否则可能干扰对存储器单元的电阻状态的感测。 在一个方面，电阻交叉点存储单元阵列的存储单元被布置成两组或更多个存储单元。 每组的存储单元连接在相应的字线和耦合到位线的公共隔离二极管之间。

公开(公告)号：US20090263162A1

公开(公告)日：2009-10-22

申请号：US12481310

申请日：2009-06-09

Applicant: Manish Sharma ,  Lung Tran

Inventor： Manish Sharma ,  Lung Tran

IPC: G03G15/10

CPC classification number: H04L45/00 ,  G03G15/10 ,  G03G15/224 ,  G03G15/225 ,  G03G15/6585 ,  H04L45/24 ,  H04L45/245 ,  H04L45/60 ,  H05K3/1266 ,  H05K3/207 ,  H05K2201/0257 ,  H05K2203/0126 ,  H05K2203/0517 ,  Y02D50/30

Abstract: The invention provides a printed circuit board (PCB) printing system. In a particular embodiment, the system includes a liquid electrophotographic printing device. At least one supplier of electrically conductive ink supplying electrically conductive ink to the electrophotographic printing device is also provided. In addition, at least one supplier of dielectric ink supplying dielectric ink to the electrophotographic printing device is also provided. The liquid electrophotographic printing device is operable to apply the electrically conductive ink and the dielectric ink to a provided substrate such that substantially immiscible boundary delineation occurs at any points of contact between the applied electrically conducive ink and the applied dielectric ink. An appropriate method of use for the rendering of a printed circuit board is also provided.

Abstract translation: 本发明提供一种印刷电路板（PCB）印刷系统。 在特定实施例中，系统包括液体电子照相印刷装置。 还提供了向电子照相打印装置供应导电油墨的导电油墨的至少一个供应商。 此外，还提供了向电子照相打印装置供应电介质油墨的至少一个介电油墨供应商。 液体电子照相打印装置可操作以将导电油墨和电介质油墨施加到所提供的基底上，使得在施加的电导墨和所施加的电介质墨之间的任何接触点处发生基本上不混溶的边界描绘。 还提供了适用于印刷电路板的再现的方法。

公开(公告)号：US07560215B2

公开(公告)日：2009-07-14

申请号：US10958007

申请日：2004-10-04

Applicant: Manish Sharma ,  Lung Tran

Inventor： Manish Sharma ,  Lung Tran

IPC: G03G15/10

CPC classification number: H04L45/00 ,  G03G15/10 ,  G03G15/224 ,  G03G15/225 ,  G03G15/6585 ,  H04L45/24 ,  H04L45/245 ,  H04L45/60 ,  H05K3/1266 ,  H05K3/207 ,  H05K2201/0257 ,  H05K2203/0126 ,  H05K2203/0517 ,  Y02D50/30

Abstract: The invention provides a printed circuit board (PCB) printing system. In a particular embodiment, the system includes a liquid electrophotographic printing device. At least one supplier of electrically conductive ink supplying electrically conductive ink to the electrophotographic printing device is also provided. In addition, at least one supplier of dielectric ink supplying dielectric ink to the electrophotographic printing device is also provided. The liquid electrophotographic printing device is operable to apply the electrically conductive ink and the dielectric ink to a provided substrate such that substantially immiscible boundary delineation occurs at any points of contact between the applied electrically conducive ink and the applied dielectric ink. An appropriate method of use for the rendering of a printed circuit board is also provided.

Abstract translation: 本发明提供一种印刷电路板（PCB）印刷系统。 在特定实施例中，系统包括液体电子照相印刷装置。 还提供了向电子照相打印装置供应导电油墨的导电油墨的至少一个供应商。 此外，还提供了向电子照相打印装置供应电介质油墨的至少一个介电油墨供应商。 液体电子照相打印装置可操作以将导电油墨和电介质油墨施加到所提供的基底上，使得在所施加的电导墨和所施加的电介质墨之间的任何接触点处发生基本上不混溶的边界描绘。 还提供了适用于印刷电路板的再现的方法。

公开(公告)号：US20050094458A1

公开(公告)日：2005-05-05

申请号：US10661448

申请日：2003-09-11

Applicant: James Eaton ,  Frederick Perner ,  Lung Tran ,  Kenneth Eldredge

Inventor： James Eaton ,  Frederick Perner ,  Lung Tran ,  Kenneth Eldredge

IPC: H01L27/105 ,  G11C7/00 ,  G11C11/00 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L43/08

CPC classification number: G11C11/16

Abstract: A method for making magnetic random access memories (MRAM) isolates each and every memory cell in an MRAM array during operation until selected. Some embodiments use series connected diodes for such electrical isolation. Only a selected one of the memory cells will then conduct current between respective ones of the bit and word lines. A better, more uniform distribution of read and data-write data access currents results to all the memory cells. In another embodiment, this improvement is used to increase the number of rows and columns to support a larger data array. In a further embodiment, such improvement is used to increase operating margins and reduce necessary data-write voltages and currents.

Abstract translation: 用于制造磁随机存取存储器（MRAM）的方法在操作期间隔离MRAM阵列中的每个存储单元直到被选择。 一些实施例使用用于这种电隔离的串联连接的二极管。 只有选定的一个存储器单元将在相应的位和字线之间传导电流。 读取和写入数据访问电流的更好，更均匀的分布会导致所有存储单元。 在另一个实施例中，该改进用于增加支持较大数据阵列的行和列的数量。 在另一实施例中，这种改进用于增加操作裕度并减少必要的数据写入电压和电流。

公开(公告)号：US07180770B2

公开(公告)日：2007-02-20

申请号：US11089688

申请日：2005-03-24

Applicant: Frederick A. Perner ,  Janice Nickel ,  Lung Tran

Inventor： Frederick A. Perner ,  Janice Nickel ,  Lung Tran

IPC: G11C11/02

CPC classification number: G11C11/16 ,  G11C11/1675

Abstract: An information storage device is provided. The information storage device may be a magnetic random access memory (MRAM) device including a resistive cross point array of spin dependent tunneling (SDT) junctions or magnetic memory elements, with word lines extending along rows of the SDT junctions and bit lines extending along the columns of the SDT junctions. The present design includes a plurality of heating elements connected in series with associated magnetic memory elements, each heating element comprising a diode. Voltage applied to a magnetic memory element and associated heating element causes reverse current to flow through the diode, thereby producing heat from the diode and heating the magnetic memory element, thereby facilitating the write function of the device.

Abstract translation: 提供信息存储装置。 信息存储装置可以是包括自旋相关隧道（SDT）结或磁存储元件的电阻交叉点阵列的磁性随机存取存储器（MRAM）装置，其中字线沿着沿着SDT结的行和沿着 SDT路口的列。 本设计包括与相关联的磁存储元件串联连接的多个加热元件，每个加热元件包括二极管。 施加到磁存储元件和相关联的加热元件的电压导致反向电流流过二极管，从而从二极管产生热量并加热磁存储元件，从而有助于器件的写入功能。

公开(公告)号：US20050281075A1

公开(公告)日：2005-12-22

申请号：US10871761

申请日：2004-06-17

Applicant: Zhizhang Chen ,  Mark Johnson ,  Lung Tran

Inventor： Zhizhang Chen ,  Mark Johnson ,  Lung Tran

IPC: G11B9/00 ,  G11B9/04 ,  G11C11/00

CPC classification number: G11B9/1409 ,  G11B9/00 ,  G11B9/04 ,  G11B9/14 ,  G11B9/1427 ,  Y10S977/943

Abstract: A semiconductor storage device including a tip electrode, a media electrode and a storage media. The storage media has a storage area configurable to be in one of a plurality of structural states to represent information stored at the storage area, by passing a current through the storage area between the tip electrode and media electrode.

Abstract translation: 一种半导体存储装置，包括尖端电极，介质电极和存储介质。 存储介质具有可配置为处于多个结构状态之一的存储区域，以通过使电流通过尖端电极和介质电极之间的存储区域来表示存储在存储区域的信息。

公开(公告)号：US20050237795A1

公开(公告)日：2005-10-27

申请号：US10832912

申请日：2004-04-26

Applicant: Frederick Perner ,  Thomas Anthony ,  Robert Walmsley ,  Lung Tran

Inventor： Frederick Perner ,  Thomas Anthony ,  Robert Walmsley ,  Lung Tran

IPC: G11C11/16 ,  G11C11/14

CPC classification number: G11C11/16 ,  G11C11/1675

Abstract: A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field is established by a first write current flowing from a first voltage potential to a second voltage potential as applied to the first conductor. A second write magnetic field is established by a second write current flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor. The voltage potential of the first conductor is greater than the voltage potential of the second conductor. As a result, a third current, flows from the first conductor through the SVM cell to the second conductor. The SVM cell has an internal resistance such that the flowing current generates heat within the SVM cell. As the SVM cell is self heated, the coercivity of the SVM cell falls below the combined write magnetic fields.

Abstract translation: 在具有其中矫顽力在温度升高时减小的材料的所选择的两个导体自旋阀存储器（SVM）单元上进行热辅助写入操作的方法。 在特定实施例中，当施加到第一导体时，通过从第一电压电位流向第二电压电位的第一写入电流建立第一写入磁场。 第二写入磁场通过施加到第二导体的从第三电压电位流向第四电压电位的第二写入电流来建立。 第一导体的电压电位大于第二导体的电压电位。 结果，第三电流从第一导体流过SVM电池流到第二导体。 SVM单元具有内部电阻，使得流动电流在SVM单元内产生热量。 由于SVM单元是自加热的，所以SVM单元的矫顽力低于组合的写入磁场。