公开(公告)号：US20050094458A1

公开(公告)日：2005-05-05

申请号：US10661448

申请日：2003-09-11

申请人： James Eaton ,  Frederick Perner ,  Lung Tran ,  Kenneth Eldredge

发明人： James Eaton ,  Frederick Perner ,  Lung Tran ,  Kenneth Eldredge

IPC分类号： H01L27/105 ,  G11C7/00 ,  G11C11/00 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L43/08

CPC分类号： G11C11/16

摘要： A method for making magnetic random access memories (MRAM) isolates each and every memory cell in an MRAM array during operation until selected. Some embodiments use series connected diodes for such electrical isolation. Only a selected one of the memory cells will then conduct current between respective ones of the bit and word lines. A better, more uniform distribution of read and data-write data access currents results to all the memory cells. In another embodiment, this improvement is used to increase the number of rows and columns to support a larger data array. In a further embodiment, such improvement is used to increase operating margins and reduce necessary data-write voltages and currents.

摘要翻译： 用于制造磁随机存取存储器（MRAM）的方法在操作期间隔离MRAM阵列中的每个存储单元直到被选择。 一些实施例使用用于这种电隔离的串联连接的二极管。 只有选定的一个存储器单元将在相应的位和字线之间传导电流。 读取和写入数据访问电流的更好，更均匀的分布会导致所有存储单元。 在另一个实施例中，该改进用于增加支持较大数据阵列的行和列的数量。 在另一实施例中，这种改进用于增加操作裕度并减少必要的数据写入电压和电流。

公开(公告)号：US20050237795A1

公开(公告)日：2005-10-27

申请号：US10832912

申请日：2004-04-26

申请人： Frederick Perner ,  Thomas Anthony ,  Robert Walmsley ,  Lung Tran

发明人： Frederick Perner ,  Thomas Anthony ,  Robert Walmsley ,  Lung Tran

IPC分类号： G11C11/16 ,  G11C11/14

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field is established by a first write current flowing from a first voltage potential to a second voltage potential as applied to the first conductor. A second write magnetic field is established by a second write current flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor. The voltage potential of the first conductor is greater than the voltage potential of the second conductor. As a result, a third current, flows from the first conductor through the SVM cell to the second conductor. The SVM cell has an internal resistance such that the flowing current generates heat within the SVM cell. As the SVM cell is self heated, the coercivity of the SVM cell falls below the combined write magnetic fields.

摘要翻译： 在具有其中矫顽力在温度升高时减小的材料的所选择的两个导体自旋阀存储器（SVM）单元上进行热辅助写入操作的方法。 在特定实施例中，当施加到第一导体时，通过从第一电压电位流向第二电压电位的第一写入电流建立第一写入磁场。 第二写入磁场通过施加到第二导体的从第三电压电位流向第四电压电位的第二写入电流来建立。 第一导体的电压电位大于第二导体的电压电位。 结果，第三电流从第一导体流过SVM电池流到第二导体。 SVM单元具有内部电阻，使得流动电流在SVM单元内产生热量。 由于SVM单元是自加热的，所以SVM单元的矫顽力低于组合的写入磁场。

公开(公告)号：US06781906B2

公开(公告)日：2004-08-24

申请号：US10299501

申请日：2002-11-19

申请人： Frederick Perner ,  Lung Tran

发明人： Frederick Perner ,  Lung Tran

IPC分类号： G11C702

CPC分类号： G11C7/062 ,  G11C7/067 ,  G11C11/16 ,  G11C2207/063 ,  G11C2207/2254

摘要： A memory cell sensor including an integrator for sensing a logical state of a memory cell. An integrator calibration circuit provides a corrective bias to the integrator, the corrective bias being based upon a difference between an initial integrator output value and a reference value. Another embodiment includes a method of sensing a logical state of a memory cell. The memory cell being sensed by an integrator. The method includes determining an initial integrator output value when a corrective bias of the integrator is zeroed, generating a correction value by comparing the initial integrator output value to a reference value, and applying the correction value to the corrective bias of the integrator.

摘要翻译： 一种存储单元传感器，包括用于感测存储单元的逻辑状态的积分器。 积分器校准电路为积分器提供校正偏置，校正偏置基于初始积分器输出值和参考值之间的差异。 另一个实施例包括一种感测存储器单元的逻辑状态的方法。 存储器单元被积分器感测。 该方法包括当积分器的校正偏置为零时确定初始积分器输出值，通过将初始积分器输出值与参考值进行比较产生校正值，并将校正值应用于积分器的校正偏置。

公开(公告)号：US20060215444A1

公开(公告)日：2006-09-28

申请号：US11089688

申请日：2005-03-24

申请人： Frederick Perner ,  Janice Nickel ,  Lung Tran

发明人： Frederick Perner ,  Janice Nickel ,  Lung Tran

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： An information storage device is provided. The information storage device may be a magnetic random access memory (MRAM) device including a resistive cross point array of spin dependent tunneling (SDT) junctions or magnetic memory elements, with word lines extending along rows of the SDT junctions and bit lines extending along the columns of the SDT junctions. The present design includes a plurality of heating elements connected in series with associated magnetic memory elements, each heating element comprising a diode. Voltage applied to a magnetic memory element and associated heating element causes reverse current to flow through the diode, thereby producing heat from the diode and heating the magnetic memory element, thereby facilitating the write function of the device.

摘要翻译： 提供信息存储装置。 信息存储装置可以是包括自旋相关隧道（SDT）结或磁存储元件的电阻交叉点阵列的磁性随机存取存储器（MRAM）装置，其中字线沿着沿着SDT结的行和沿着 SDT路口的列。 本设计包括与相关联的磁存储元件串联连接的多个加热元件，每个加热元件包括二极管。 施加到磁存储元件和相关联的加热元件的电压导致反向电流流过二极管，从而从二极管产生热量并加热磁存储元件，从而有助于器件的写入功能。

公开(公告)号：US20050073881A1

公开(公告)日：2005-04-07

申请号：US10680483

申请日：2003-10-06

申请人： Lung Tran ,  Frederick Perner

发明人： Lung Tran ,  Frederick Perner

IPC分类号： G11C11/15 ,  G11C11/14 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC分类号： G11C11/16 ,  G11C11/1673

摘要： A data storage device includes a cross point array of resistive memory elements and a plurality of blocking elements. The device is arranged in groups. Each group includes series-connected memory elements and a blocking element. The blocking elements are used to prevent sneak path currents from interfering with sense currents during read operations.

摘要翻译： 数据存储装置包括电阻性存储器元件的交叉点阵列和多个阻塞元件。 设备分组安排。 每个组包括串联存储器元件和阻塞元件。 阻塞元件用于在读取操作期间防止潜行路径电流干扰读出电流。

公开(公告)号：US20090263162A1

公开(公告)日：2009-10-22

申请号：US12481310

申请日：2009-06-09

申请人： Manish Sharma ,  Lung Tran

发明人： Manish Sharma ,  Lung Tran

IPC分类号： G03G15/10

CPC分类号： H04L45/00 ,  G03G15/10 ,  G03G15/224 ,  G03G15/225 ,  G03G15/6585 ,  H04L45/24 ,  H04L45/245 ,  H04L45/60 ,  H05K3/1266 ,  H05K3/207 ,  H05K2201/0257 ,  H05K2203/0126 ,  H05K2203/0517 ,  Y02D50/30

摘要： The invention provides a printed circuit board (PCB) printing system. In a particular embodiment, the system includes a liquid electrophotographic printing device. At least one supplier of electrically conductive ink supplying electrically conductive ink to the electrophotographic printing device is also provided. In addition, at least one supplier of dielectric ink supplying dielectric ink to the electrophotographic printing device is also provided. The liquid electrophotographic printing device is operable to apply the electrically conductive ink and the dielectric ink to a provided substrate such that substantially immiscible boundary delineation occurs at any points of contact between the applied electrically conducive ink and the applied dielectric ink. An appropriate method of use for the rendering of a printed circuit board is also provided.

摘要翻译： 本发明提供一种印刷电路板（PCB）印刷系统。 在特定实施例中，系统包括液体电子照相印刷装置。 还提供了向电子照相打印装置供应导电油墨的导电油墨的至少一个供应商。 此外，还提供了向电子照相打印装置供应电介质油墨的至少一个介电油墨供应商。 液体电子照相打印装置可操作以将导电油墨和电介质油墨施加到所提供的基底上，使得在施加的电导墨和所施加的电介质墨之间的任何接触点处发生基本上不混溶的边界描绘。 还提供了适用于印刷电路板的再现的方法。

公开(公告)号：US07560215B2

公开(公告)日：2009-07-14

申请号：US10958007

申请日：2004-10-04

申请人： Manish Sharma ,  Lung Tran

发明人： Manish Sharma ,  Lung Tran

IPC分类号： G03G15/10

CPC分类号： H04L45/00 ,  G03G15/10 ,  G03G15/224 ,  G03G15/225 ,  G03G15/6585 ,  H04L45/24 ,  H04L45/245 ,  H04L45/60 ,  H05K3/1266 ,  H05K3/207 ,  H05K2201/0257 ,  H05K2203/0126 ,  H05K2203/0517 ,  Y02D50/30

摘要： The invention provides a printed circuit board (PCB) printing system. In a particular embodiment, the system includes a liquid electrophotographic printing device. At least one supplier of electrically conductive ink supplying electrically conductive ink to the electrophotographic printing device is also provided. In addition, at least one supplier of dielectric ink supplying dielectric ink to the electrophotographic printing device is also provided. The liquid electrophotographic printing device is operable to apply the electrically conductive ink and the dielectric ink to a provided substrate such that substantially immiscible boundary delineation occurs at any points of contact between the applied electrically conducive ink and the applied dielectric ink. An appropriate method of use for the rendering of a printed circuit board is also provided.

摘要翻译： 本发明提供一种印刷电路板（PCB）印刷系统。 在特定实施例中，系统包括液体电子照相印刷装置。 还提供了向电子照相打印装置供应导电油墨的导电油墨的至少一个供应商。 此外，还提供了向电子照相打印装置供应电介质油墨的至少一个介电油墨供应商。 液体电子照相打印装置可操作以将导电油墨和电介质油墨施加到所提供的基底上，使得在所施加的电导墨和所施加的电介质墨之间的任何接触点处发生基本上不混溶的边界描绘。 还提供了适用于印刷电路板的再现的方法。

公开(公告)号：US07391641B2

公开(公告)日：2008-06-24

申请号：US11285991

申请日：2005-11-23

申请人： Manish Sharma ,  Lung Tran ,  Thomas C. Anthony

发明人： Manish Sharma ,  Lung Tran ,  Thomas C. Anthony

IPC分类号： G11C11/00

CPC分类号： G11C11/15 ,  H01L27/222 ,  H01L43/08

摘要： An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.

摘要翻译： 包括多个存储器单元的示例性存储器阵列，每个存储器单元包括第一铁磁层，通过非磁性分离层与第一铁磁层隔开的第二铁磁层，并且通过非磁性分离层磁耦合到第一铁磁层，并通过 来自第一铁磁层的去磁场，第二铁磁层上方的间隔层，以及间隔层上方的基准层。 第一铁磁层，非磁性分离层和第二铁磁层组合起来作为存储单元的数据层。

公开(公告)号：US20060082526A1

公开(公告)日：2006-04-20

申请号：US10969085

申请日：2004-10-20

申请人： Thomas Anthony ,  Lung Tran ,  Gary Gibson

发明人： Thomas Anthony ,  Lung Tran ,  Gary Gibson

IPC分类号： G09G3/32

CPC分类号： G09G3/3233 ,  G09G3/2011 ,  G09G3/3216 ,  G09G3/3283 ,  G09G2300/06 ,  G09G2300/0809 ,  G09G2300/0885 ,  G09G2310/0205 ,  G09G2310/0262

摘要： A display element includes a variable optical element that changes appearance in response to changes in current, and a programmable resistance in series with the variable optical element. The resistance of the programmable resistance decreases in response to a first current in a first direction. The resistance of the programmable resistance increases in response to a second current in a second direction.

摘要翻译： 显示元件包括响应于电流变化而改变外观的可变光学元件和与可变光学元件串联的可编程电阻。 可编程电阻的电阻响应于第一方向上的第一电流而减小。 可编程电阻的电阻响应于第二方向上的第二电流而增加。

公开(公告)号：US06906941B2

公开(公告)日：2005-06-14

申请号：US10624175

申请日：2003-07-22

申请人： Lung Tran ,  Thomas C. Anthony

发明人： Lung Tran ,  Thomas C. Anthony

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C5/08

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.

摘要翻译： 本发明包括堆叠磁存储器结构。 磁存储器结构包括堆叠磁存储器结构。 第一层包括第一多个磁性隧道结。 形成与第一层相邻的第二层。 第二层包括第二多个磁性隧道结。 层叠的磁存储器结构还包括连接到第一多个磁隧道结中的每一个和第二多个磁性隧道结的公共第一组导体。