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26 条记录 (耗时 0.026 秒)

    Memory cell with resistance-switching layers
    22.
    发明授权
    Memory cell with resistance-switching layers 有权
    具有电阻切换层的存储单元

    公开(公告)号：US08737111B2

    公开(公告)日：2014-05-27

    申请号：US13157191

    申请日：2011-06-09

    申请人： Franz Kreupl ,  Xiying Costa ,  James Kai ,  Raghuveer S. Makala

    发明人： Franz Kreupl ,  Xiying Costa ,  James Kai ,  Raghuveer S. Makala

    IPC分类号： G11C11/00

    CPC分类号： H01L27/2409 ,  G11C11/16 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146

    摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an electric field is applied across the first and second electrodes. An ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.

    摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。 每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧上具有第一和第二电阻切换层，在RSME的任一端具有第一和第二电极。 第一和第二电阻切换层都可以具有双极或单极开关特性。 在存储单元的置位或复位操作中，跨越第一和第二电极施加电场。 离子电流在电阻切换层中流动，有助于切换机构。 由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。 提供了用于RSME不同层的材料和材料的组合。

    Memory cell that includes a carbon-based memory element and methods of forming the same
    23.
    发明授权
    Memory cell that includes a carbon-based memory element and methods of forming the same 有权
    包含碳基记忆元件的记忆单元及其形成方法

    公开(公告)号：US08436447B2

    公开(公告)日：2013-05-07

    申请号：US12765955

    申请日：2010-04-23

    申请人： Pankaj Kalra ,  Raghuveer S. Makala

    发明人： Pankaj Kalra ,  Raghuveer S. Makala

    IPC分类号： H01L21/02

    CPC分类号： H01L27/1021 ,  B82Y10/00 ,  B82Y40/00 ,  G11C13/025 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/28 ,  H01L45/149 ,  H01L51/0048

    摘要： In a first aspect, a memory cell is provided, the memory cell including: (a) a first conducting layer formed above a substrate; (b) a second conducting layer formed above the first conducting layer; (c) a structure formed between the first and second conducting layers, wherein the structure includes a sidewall that defines an opening extending between the first and second conducting layers, and wherein the structure is comprised of a material that facilitates selective, directional growth of carbon nano-tubes; and (d) a carbon-based switching layer that includes carbon nano-tubes formed on the sidewall of the structure. Numerous other aspects are provided.

    摘要翻译： 在第一方面，提供一种存储单元，所述存储单元包括：（a）形成在衬底上的第一导电层; （b）形成在第一导电层上方的第二导电层; （c）形成在第一和第二导电层之间的结构，其中该结构包括限定在第一和第二导电层之间延伸的开口的侧壁，并且其中该结构由促进碳的选择性，定向生长的材料构成 纳米管; 和（d）碳结合层，其包含在该结构侧壁上形成的碳纳米管。 提供了许多其他方面。

    Three dimensional horizontal diode non-volatile memory array and method of making thereof
    24.
    发明授权
    Three dimensional horizontal diode non-volatile memory array and method of making thereof 有权
    三维水平二极管非易失性存储器阵列及其制造方法

    公开(公告)号：US08187932B2

    公开(公告)日：2012-05-29

    申请号：US12905445

    申请日：2010-10-15

    申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Raghuveer S. Makala

    发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Raghuveer S. Makala

    IPC分类号： H01L21/8234

    CPC分类号： H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/249

    摘要： A non-volatile memory device contains a three dimensional stack of horizontal diodes located in a trench in an insulating material, a plurality of storage elements, a plurality of word lines extending substantially vertically, and a plurality of bit lines. Each of the plurality of bit lines has a first portion that extends up along at least one side of the trench and a second portion that extends substantially horizontally through the three dimensional stack of the horizontal diodes. Each of the horizontal diodes is a steering element of a respective non-volatile memory cell of the non-volatile memory device, and each of the plurality of storage elements is located adjacent to a respective steering element.

    摘要翻译： 非易失性存储器件包含位于绝缘材料沟槽中的水平二极管的三维堆叠，多个存储元件，基本垂直延伸的多条字线和多个位线。 多个位线中的每一个具有沿着沟槽的至少一侧向上延伸的第一部分和基本水平延伸穿过水平二极管的三维叠层的第二部分。 每个水平二极管是非易失性存储器件的相应非易失性存储单元的转向元件，并且多个存储元件中的每一个位于相应的转向元件附近。