公开(公告)号：US20110227064A1

公开(公告)日：2011-09-22

申请号：US13064366

申请日：2011-03-22

Applicant: Kyung-Bae Park ,  Myung-Kwan Ryu ,  Jong-Baek Seon ,  Sang-Yoon Lee ,  Bon-Won Koo

Inventor： Kyung-Bae Park ,  Myung-Kwan Ryu ,  Jong-Baek Seon ,  Sang-Yoon Lee ,  Bon-Won Koo

IPC: H01L29/12 ,  H01L21/04

CPC classification number: H01L29/7869 ,  H01L29/4908

Abstract: Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

Abstract translation: 薄膜晶体管，包括设置在漏电极和源电极之间的半导体沟道; 以及栅极绝缘层，其设置在所述半导体沟道和栅电极之间，其中所述半导体沟道包括第一金属氧化物，所述栅极绝缘层包括第二金属氧化物，并且所述第二金属氧化物的至少一种金属至少与 第一金属氧化物的一种金属，薄膜晶体管的制造方法以及包括薄膜晶体管的半导体器件。

公开(公告)号：US08003729B2

公开(公告)日：2011-08-23

申请号：US12081452

申请日：2008-04-16

Applicant: Joo Young Kim ,  Myung Sup Jung ,  Sang Yoon Lee

Inventor： Joo Young Kim ,  Myung Sup Jung ,  Sang Yoon Lee

IPC: C08G63/48

CPC classification number: H01L51/052 ,  H01L51/0036 ,  H01L51/0545

Abstract: An organic insulator composition including a crosslinking agent and a hydroxyl group-containing oligomer or hydroxyl group-containing polymer is provided. A dielectric film and an organic thin film transistor (OTFT) using an organic insulator composition are also provided. A dielectric film may include a compound having hydroxyl group-containing oligomers or hydroxyl group-containing polymers linked by crosslinking using a crosslinking agent having at least two vinyl ether groups. An organic thin film transistor may include a gate electrode on a substrate, a gate insulating layer on the gate electrode, source and drain electrodes on the gate insulating layer and an organic semiconductor layer contacting the gate insulating layer, wherein the gate insulating layer includes an dielectric film as described above.

Abstract translation: 提供了包含交联剂和含羟基的低聚物或含羟基的聚合物的有机绝缘体组合物。 还提供了使用有机绝缘体组合物的电介质膜和有机薄膜晶体管（OTFT）。 电介质膜可以包括具有含羟基的低聚物或含羟基聚合物的化合物，其通过使用具有至少两个乙烯基醚基团的交联剂进行交联而连接。 有机薄膜晶体管可以包括基板上的栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的源极和漏极以及与栅极绝缘层接触的有机半导体层，其中栅极绝缘层包括 如上所述的介电膜。

公开(公告)号：US07994071B2

公开(公告)日：2011-08-09

申请号：US11633008

申请日：2006-12-04

Applicant: Bon Won Koo ,  Sang Yoon Lee ,  Jung Seok Hahn ,  Joo Young Kim

Inventor： Bon Won Koo ,  Sang Yoon Lee ,  Jung Seok Hahn ,  Joo Young Kim

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L51/052 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0545

Abstract: Disclosed are compositions for forming organic insulating films and methods for forming organic insulating films using one or more of the compositions. The compositions include at least one ultraviolet (UV) curing agent, at least one water-soluble polymer and at least one water-soluble fluorine compound, and the method includes applying the composition to a substrate to form a coating layer, irradiating the coating layer with UV light to form an exposed layer and developing the exposed layer with an aqueous developing solution to obtain an organic insulating film and/or pattern. Also disclosed are organic thin film transistors comprising an organic insulating film formed by one of the methods using one of the compositions that may exhibit improved hysteresis performance and/or acceptable surface properties without the need for additional processing, thereby simplifying the fabrication process.

Abstract translation: 公开了用于形成有机绝缘膜的组合物和使用一种或多种组合物形成有机绝缘膜的方法。 该组合物包括至少一种紫外线（UV）固化剂，至少一种水溶性聚合物和至少一种水溶性氟化合物，并且该方法包括将该组合物施用于基材以形成涂层，照射该涂层 用UV光形成曝光层，并用含水显影液显影曝光层，得到有机绝缘膜和/或图案。 还公开了有机薄膜晶体管，其包括通过使用可以显示出改进的滞后性能和/或可接受的表面性质的组合物之一的方法之一形成的有机绝缘膜，而不需要额外的处理，从而简化了制造工艺。

公开(公告)号：US20110180803A1

公开(公告)日：2011-07-28

申请号：US12929453

申请日：2011-01-26

Applicant: Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Kyung-bae Park

Inventor： Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Kyung-bae Park

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78696

Abstract: Thin film transistors (TFTs) and methods of manufacturing the same. A TFT may include a floating channel on a surface of a channel and spaced apart from a source and a drain, and an insulating layer formed on the floating channel and designed to determine a distance between the floating channel and the source or the drain.

Abstract translation: 薄膜晶体管（TFT）及其制造方法。 TFT可以包括在沟道的表面上并与源极和漏极间隔开的浮动沟道，以及形成在浮动沟道上并被设计成确定浮动沟道与源极或漏极之间的距离的绝缘层。

公开(公告)号：US20110117104A1

公开(公告)日：2011-05-19

申请号：US11908249

申请日：2006-03-10

Applicant: Hyo Jeong Hong ,  Kyung Soo Inn ,  Nam Kyu Lim ,  Jung Whan Kim ,  Keun Soo Kim ,  Sang Yoon Lee ,  Se Yeon Kim ,  Hyun Jung Kang ,  Mee Sook Oh

Inventor： Hyo Jeong Hong ,  Kyung Soo Inn ,  Nam Kyu Lim ,  Jung Whan Kim ,  Keun Soo Kim ,  Sang Yoon Lee ,  Se Yeon Kim ,  Hyun Jung Kang ,  Mee Sook Oh

IPC: A61K39/40 ,  C07K16/12 ,  C12N5/16 ,  C07H21/00 ,  A61P31/04

CPC classification number: C07K16/1278 ,  A61K2039/505 ,  C07K2317/24 ,  C07K2317/34 ,  C07K2317/565 ,  C07K2317/567 ,  C07K2317/76 ,  C07K2317/77

Abstract: Disclosed is a monoclonal antibody having very high affinity to anthrax toxin and potent toxin-neutralizing activity. Also disclosed are a composition for neutralizing anthrax toxin comprising the antibody and a kit for detecting anthrax toxin.

Abstract translation: 公开了对炭疽毒素具有非常高的亲和力和有效的毒素中和活性的单克隆抗体。 还公开了用于中和包含抗体的炭疽毒素的组合物和用于检测炭疽毒素的试剂盒。

公开(公告)号：US07943985B2

公开(公告)日：2011-05-17

申请号：US12219661

申请日：2008-07-25

Applicant: Tae-sang Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Tae-sang Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631

Abstract: Oxide semiconductor thin film transistors (TFT) and methods of manufacturing the same are provided. The methods include forming a channel layer on a substrate, forming source and drain electrodes at opposing sides of the channel layer, and oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer, reducing carriers on the surface of the channel layer. Due to the oxidizing agent treatment of the surface of the channel layer, excessive carriers that are generated naturally, or during the manufacturing process, may be more effectively controlled.

Abstract translation: 提供氧化物半导体薄膜晶体管（TFT）及其制造方法。 所述方法包括在衬底上形成沟道层，在沟道层的相对侧形成源极和漏极，并且通过将氧化材料与沟道层的表面相接触来氧化沟道层的表面， 通道层的表面。 由于氧化剂处理通道层的表面，可以更有效地控制天然产生的过量载体或制造过程中产生的过量载体。

公开(公告)号：US20110098486A1

公开(公告)日：2011-04-28

申请号：US12929078

申请日：2010-12-29

Applicant: Eun Jeong Jeong ,  Hyun Sik Moon ,  Jeong Il Park ,  Sang Yoon Lee

Inventor： Eun Jeong Jeong ,  Hyun Sik Moon ,  Jeong Il Park ,  Sang Yoon Lee

IPC: C07D495/02 ,  H01L51/40

CPC classification number: H01L51/0056 ,  C07D495/04 ,  C07F7/0812 ,  H01L51/0058 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

Abstract: Disclosed are a novel aromatic enediyne derivative, an organic semiconductor thin film using the same, and an electronic device. Example embodiments pertain to an aromatic enediyne derivative which enables the formation of a chemically and electrically stable and reliable semiconductor thin film using a solution process, e.g., spin coating and/or spin casting, at about room temperature when applied to devices, an organic semiconductor thin film using the same, and an electronic device including the organic semiconductor thin film. A thin film having a relatively large area may be formed through a solution process, therefore simplifying the manufacturing process and decreasing the manufacturing cost. Moreover, it is possible to provide an organic semiconductor that may be effectively applied to various fields including organic thin film transistors, electroluminescent devices, solar cells, and memory.

Abstract translation: 公开了一种新型芳族烯二炔衍生物，使用其的有机半导体薄膜和电子器件。 示例性实施方案涉及芳族烯二炔衍生物，其能够在施加到器件时在大约室温下使用溶液方法（例如旋涂和/或旋转浇铸）形成化学和电稳定且可靠的半导体薄膜，有机半导体 使用其的薄膜，以及包括有机半导体薄膜的电子器件。 可以通过溶液工艺形成具有相对较大面积的薄膜，从而简化制造工艺并降低制造成本。 此外，可以提供可有效地应用于有机薄膜晶体管，电致发光器件，太阳能电池和存储器等各种领域的有机半导体。

公开(公告)号：US07893190B2

公开(公告)日：2011-02-22

申请号：US12081681

申请日：2008-04-18

Applicant: Jeong Il Park ,  Kook Min Han ,  Sang Yoon Lee ,  Eun Jeong Jeong

Inventor： Jeong Il Park ,  Kook Min Han ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC: C08G75/00

CPC classification number: H01L51/0043 ,  C08F24/00 ,  C08F26/06 ,  C08F28/06 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0545 ,  Y02E10/549

Abstract: Disclosed herein are an alternating copolymer of phenylene vinylene and oligoarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and oligoarylene vinylene.

Abstract translation: 本文公开了亚苯基亚乙烯基和低聚亚芳基亚乙烯基的交替共聚物，其制备方法和包括其的有机薄膜晶体管。 有机薄膜晶体管由于其有机活性层由亚苯基亚乙烯基和低聚亚芳基亚乙烯基的交替共聚物形成，因此保持低截止状态的漏电流并实现高导通/截止电流比和高电荷迁移率。

公开(公告)号：US07851802B2

公开(公告)日：2010-12-14

申请号：US12219265

申请日：2008-07-18

Applicant: Kyung-bae Park ,  Seon-mi Yoon ,  Sang-yoon Lee ,  Jae-young Choi ,  Hyeon-jin Shin ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Kyung-bae Park ,  Seon-mi Yoon ,  Sang-yoon Lee ,  Jae-young Choi ,  Hyeon-jin Shin ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L31/036

CPC classification number: H01L21/02675 ,  H01L21/02532 ,  H01L29/66765 ,  Y10S977/762 ,  Y10S977/778

Abstract: Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.

Abstract translation: 示例性实施例涉及由多晶硅（Si）薄膜形成的多晶硅（Si）薄膜，薄膜晶体管（TFT）及其制造方法。 多晶Si薄膜的制造方法包括在基板上形成由非晶Si形成的有源层，在有源层上涂覆金纳米棒，并将红外线照射到金纳米棒上以结晶活性层。

公开(公告)号：US20100302170A1

公开(公告)日：2010-12-02

申请号：US12789506

申请日：2010-05-28

Applicant: Jun Kyu KANG ,  Sang Yoon LEE ,  Ji Won CHOI ,  Dong Seong SEO

Inventor： Jun Kyu KANG ,  Sang Yoon LEE ,  Ji Won CHOI ,  Dong Seong SEO

IPC: G06F3/02 ,  G09G5/00

CPC classification number: G06F1/1624 ,  G06F3/0233

Abstract: A method of operating an input mode of a mobile terminal having a first input means and a second input means is provided. The method includes: displaying an input screen which is set as a first input mode; determining whether the second input means is in an activated state; and displaying a changed input screen which is set as a second input mode when the second input means is determined to be in an activated state.

Abstract translation: 提供一种操作具有第一输入装置和第二输入装置的移动终端的输入模式的方法。 该方法包括：显示被设置为第一输入模式的输入屏幕; 确定所述第二输入装置是否处于激活状态; 以及当确定所述第二输入装置处于激活状态时，显示被设置为第二输入模式的改变的输入屏幕。