Image reading device capable of performing shading correction
    21.
    发明授权
    Image reading device capable of performing shading correction 失效
    能够进行阴影校正的图像读取装置

    公开(公告)号:US5500745A

    公开(公告)日:1996-03-19

    申请号:US162975

    申请日:1993-12-08

    CPC classification number: H04N1/401

    Abstract: A digitized image data produced by reading a certain scanning line portion of a shading correction plate by an image sensor is stored in a buffer memory as digital data B. A digital comparator compares, on a pixel-by-pixel basis, the digital data B with new digital data A produced by reading another scanning line portion apart from the above portion by a distance of a plurality of scanning lines. This comparison is repeated while the reading line portion on the correction plate is changed until a difference between the data B and the new data A becomes smaller than a predetermined value for all the pixels. The data of one scanning line finally stored in the buffer memory is transferred to a shading correction data memory.

    Abstract translation: 通过由图像传感器读取阴影校正板的某个扫描线部分而产生的数字化图像数据作为数字数据B存储在缓冲存储器中。数字比较器在逐像素的基础上比较数字数据B 具有通过从多个扫描线的距离读出与上述部分分开的另一个扫描线部分而产生的新的数字数据A. 当校正板上的读取线部分改变直到数据B和新数据A之间的差变为小于所有像素的预定值时,重复该比较。 最后存储在缓冲存储器中的一条扫描线的数据被传送到阴影校正数据存储器。

    Photo mask and semiconductor device manufacturing method
    25.
    发明授权
    Photo mask and semiconductor device manufacturing method 失效
    光掩模和半导体器件的制造方法

    公开(公告)号:US07183128B2

    公开(公告)日:2007-02-27

    申请号:US10323969

    申请日:2002-12-20

    CPC classification number: G03F1/30 G03F7/70433

    Abstract: A photo mask which is used for exposure of an isolated pattern and a dense pattern for a semiconductor substrate. The photo mask includes a transparent substrate, a pair of first patterns, a first assistant pattern and a plurality of second patterns. The pair of first patterns is separated from each other by a first distance, wherein one of the first pattern is arranged at one side of the isolated pattern, and another of the first pattern is arranged at another side. The first assistant pattern is provided apart from the one of the first pattern by the first distance. In the plurality of second patterns, each of the linear patterns is sandwiched between two of the second patterns that are adjacent to each other. One of the linear patterns is separated from adjacent the other of the linear patterns by a predetermined distance. A phase of light transmitted through the one of the first pattern and a phase of light transmitted through the assistant pattern are opposite to each other. A phase of light transmitted through one of the second patterns and a phase of light transmitted through another of the second patterns adjacent to the one of the second pattern are opposite to each other.

    Abstract translation: 用于暴露隔离图案的照相掩模和用于半导体衬底的致密图案。 光掩模包括透明基板,一对第一图案,第一辅助图案和多个第二图案。 所述一对第一图案彼此分开第一距离,其中所述第一图案中的一个布置在所述隔离图案的一侧,并且所述第一图案中的另一个布置在另一侧。 第一辅助图案与第一图案之一分开设置第一距离。 在多个第二图案中,每个线性图案被夹在彼此相邻的两个第二图案之间。 线性图案中的一个与另一个线性图案相隔一预定距离。 通过第一图案中的一个透射的光的相位和透过辅助图案的光的相位彼此相反。 通过第二图案之一透射的光的相位和透过与第二图案之一相邻的另一个第二图案的光的相位彼此相反。

    ROTATION ANGLE DETECTING DEVICE
    28.
    发明申请
    ROTATION ANGLE DETECTING DEVICE 失效
    旋转角度检测装置

    公开(公告)号:US20060119353A1

    公开(公告)日:2006-06-08

    申请号:US11289647

    申请日:2005-11-30

    CPC classification number: G01D5/145

    Abstract: A rotation angle detecting device includes a magnet (4), a magnetic substance unit (5), and a non-contact magnetic detection element (7). The magnet (4) rotates with an object to be measured and includes two ends magnetized so as to have opposite polarities. The magnetic substance unit (5) forms a predetermined air gap with the two ends of the magnet (4) and is divided into magnetic members (6) so as to provide plane symmetry with respect to a vertical plane perpendicularly crossing a rotational center axis of the magnet (4) to form a magnetic detection gap (9) by the division. The non-contact magnetic detection element (7) is provided in the magnetic detection gap (9) between the magnetic members (6) so as to output a signal corresponding to a density of a magnetic flux passing through the magnetic detection gap (9). The rotation angle of the object to be measured is detected based on the output signal from the magnetic detection element (7). The magnetic members (6) include reverse warp parts (34) so that the air gap suddenly increases when the magnet (4) rotates at a predetermined rotation angle from a state where the air gap is minimum in a direction in which the air gap increases.

    Abstract translation: 旋转角度检测装置包括磁体(4),磁性体单元(5)和非接触磁性检测元件(7)。 磁体(4)与要测量的物体一起旋转,并且包括被磁化以具有相反极性的两端。 磁性物质单元(5)与磁体(4)的两端形成预定的气隙,并被分成磁性构件(6),以便相对于垂直于垂直于磁体的旋转中心轴 磁体(4)通过分割形成磁检测间隙(9)。 非接触磁检测元件(7)设置在磁性部件(6)之间的磁检测间隙(9)中,以输出与通过磁检测间隙(9)的磁通密度对应的信号, 。 基于来自磁检测元件(7)的输出信号来检测被测量物体的旋转角度。 磁性构件(6)包括反向经线部分(34),使得当磁体(4)在空气间隙增加的方向上从气隙最小的状态以预定的旋转角度旋转时,气隙突然增加 。

    Photomask and pattern forming method used in a thermal flow process and semiconductor integrated circuit fabricated using the thermal flow process
    29.
    发明授权
    Photomask and pattern forming method used in a thermal flow process and semiconductor integrated circuit fabricated using the thermal flow process 有权
    用于热流程的光掩模和图案形成方法以及使用热流程制造的半导体集成电路

    公开(公告)号:US06864021B2

    公开(公告)日:2005-03-08

    申请号:US10341160

    申请日:2003-01-13

    CPC classification number: G03F7/40 G03F1/00 H01L21/31144

    Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

    Abstract translation: 本发明涉及一种用于热流程的光掩模,其中:准备形成多个曝光孔的光掩模; 将抗蚀剂施加到要进行处理的半导体集成电路的层的表面上; 该抗蚀剂通过曝光工艺通过光掩模进行图案化以在抗蚀剂中形成与每个曝光开口相对应的多个开口; 然后加热图案化的抗蚀剂以使每个开口收缩; 其中所述多个曝光开口中的所述曝光开口的至少一部分形成为补偿当所述图案化抗蚀剂被加热以使每个所述开口收缩时在所述开口中发生的各向异性变形的形状。 由于在抗蚀剂中形成的开口预先设置有补偿当开口收缩时发生的变形的形状,所以这些开口在经历收缩和变形之后达到适当的形状。

    Photomask and exposure method using a photomask
    30.
    发明授权
    Photomask and exposure method using a photomask 失效
    光掩模和使用光掩模的曝光方法

    公开(公告)号:US06355382B1

    公开(公告)日:2002-03-12

    申请号:US09473994

    申请日:1999-12-29

    CPC classification number: G03F1/30 G03F1/26 G03F1/36

    Abstract: Disclosed is a photomask in which contrast of light intensity of a pattern to be transferred (main pattern) is enhanced on an image plane while transfer of auxiliary pattern themselves is suppressed. The photomask, which is used in exposure to which is applied four-point illumination method for inverting phase of light that passes through mutually adjacent patterns, has first auxiliary patterns, disposed above and below and to the left and right of a main pattern to be transferred, to thereby provide a transparent substrate with a surface flush with the main pattern or with a difference in level corresponding to a phase difference with respect to the main pattern that is K times 360° (where K is an integer that does not include zero), and second auxiliary patterns disposed at angles of 45° with respect to the main pattern, the second auxiliary patterns providing a difference in level corresponding to a phase difference, with respect to the first auxiliary patterns, that is (2L+1) times 180° (where L is an integer inclusive of zero). The contrast of the first auxiliary patterns is reduced by the second auxiliary patterns, thereby enlarging the depth of focus.

    Abstract translation: 公开了在抑制辅助图案本身的转印的同时,在图像平面上增强要转印的图案(主图案)的光强度的对比度的光掩模。 用于曝光的光掩模应用四点照明方法,用于反转通过相互相邻图案的光的相位相位,具有设置在主图案的上方和下方并且在主图案的左侧和右侧的第一辅助图案 转移,从而提供具有与主图案齐平的透明基板或者相对于主图案相对于主图案的相位差的电平差为K倍360°(其中K是不包括零的整数) )和相对于主图案以45°的角度设置的第二辅助图案,第二辅助图案相对于第一辅助图案提供对应于相位差的电平差,即(2L + 1)倍 180°(其中L是包括零的整数)。 通过第二辅助图案减少第一辅助图案的对比度,从而扩大了聚焦深度。

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