公开(公告)号：US06793559B2

公开(公告)日：2004-09-21

申请号：US10072413

申请日：2002-02-05

Applicant: Mingming Fang ,  Christopher C. Streinz ,  Shumin Wang

Inventor： Mingming Fang ,  Christopher C. Streinz ,  Shumin Wang

IPC: B24B100

CPC classification number: G11B23/505 ,  B24B37/044

Abstract: A method for polishing computer rigid disks comprising bringing at least one surface of the rigid disk into contact with a polishing pad and applying a composition to the rigid disk comprising at least one hydroxylamine additive and colloidal silica to give polished rigid disk.

Abstract translation: 一种用于抛光计算机刚性盘的方法，包括使刚性盘的至少一个表面与抛光垫接触并将组合物施加到包含至少一种羟胺添加剂和胶体二氧化硅的刚性盘中以提供抛光刚性盘。

公开(公告)号：US06646348B1

公开(公告)日：2003-11-11

申请号：US09609480

申请日：2000-07-05

Applicant: Steven K. Grumbine ,  Shumin Wang

Inventor： Steven K. Grumbine ,  Shumin Wang

IPC: H01L2348

CPC classification number: C09G1/02 ,  C09K3/1463 ,  C09K3/1472 ,  H01L21/3212

Abstract: Polishing compositions comprising at least one soluble silane compound and at least one abrasive that are useful for polishing substrate surface features.

Abstract translation: 抛光组合物，其包含至少一种可溶性硅烷化合物和至少一种可用于抛光基材表面特征的研磨剂。

公开(公告)号：US06447371B2

公开(公告)日：2002-09-10

申请号：US09800009

申请日：2001-03-06

Applicant: Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

Inventor： Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

IPC: B24B100

CPC classification number: C23F3/00 ,  C09G1/02 ,  H01L21/3212

Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

Abstract translation: 本发明是包括研磨剂，氧化剂，配位剂，成膜剂和有机氨基化合物的第一CMP浆料，包括研磨剂，氧化剂和乙酸的第二研磨浆料，其中重量比 氧化剂至乙酸为至少10，并且依次使用第一和第二抛光浆料的方法来抛光含有铜并含有钽或氮化钽或钽或氮化钽的基板。

公开(公告)号：US06316365B1

公开(公告)日：2001-11-13

申请号：US09728779

申请日：2000-12-01

Applicant: Shumin Wang ,  Homer Chou

Inventor： Shumin Wang ,  Homer Chou

IPC: H01L21302

CPC classification number: H01L21/3212 ,  C09G1/02 ,  H01L21/31053

Abstract: The present invention provides a method for chemically-mechanically polishing a substrate comprising tantalum and a conductive metal (other than tantalum). The method comprises (a) applying to the substrate a conductive metal-selective polishing composition and a metal oxide abrasive, (b) selectively removing at least a portion of the conductive metal as compared to the tantalum from the substrate, (c) applying to the substrate a tantalum-selective polishing composition and a metal oxide abrasive, and (d) removing at least a portion of the tantalum as compared to the conductive metal from the substrate. In one embodiment, the conductive metal-selective polishing composition is any such polishing composition, and the tantalum-selective polishing composition comprises a persulfate compound and a passivation film-forming agent for the conductive metal. In another embodiment, the conductive metal-selective polishing composition comprises a persulfate compound and optionally a passivation film-forming agent for the conductive metal, and the conductive metal-selective polishing composition or the polishing process is adjusted to render the conductive metal-selective polishing composition a tantalum-selective polishing composition, such as described above.

Abstract translation: 本发明提供了一种用于化学机械抛光包含钽和导电金属（不同于钽）的衬底的方法。 该方法包括（a）将导电金属选择性抛光组合物和金属氧化物研磨剂施加到基底上，（b）与来自衬底的钽相比，选择性地除去导电金属的至少一部分，（c）施加到 所述衬底是钽选择性抛光组合物和金属氧化物磨料，以及（d）与所述衬底的导电金属相比，去除所述钽的至少一部分。 在一个实施方案中，导电金属选择性抛光组合物是任何这种抛光组合物，并且钽选择性抛光组合物包含用于导电金属的过硫酸盐化合物和钝化膜形成剂。 在另一个实施方案中，导电金属选择性抛光组合物包含过硫酸盐化合物和任选的用于导电金属的钝化膜形成剂，并且调节导电金属选择性抛光组合物或抛光工艺以使导电金属选择性抛光 组成如上所述的钽选择性抛光组合物。

公开(公告)号：US6063306A

公开(公告)日：2000-05-16

申请号：US105555

申请日：1998-06-26

Applicant: Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

Inventor： Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  H01L21/00

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/3212

Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

Abstract translation: 本发明是包括研磨剂，氧化剂，配位剂，成膜剂和有机氨基化合物的第一CMP浆料，包括研磨剂，氧化剂和乙酸的第二研磨浆料，其中重量比 氧化剂至乙酸为至少10，并且依次使用第一和第二抛光浆料的方法来抛光含有铜并含有钽或氮化钽或钽或氮化钽的基板。

公开(公告)号：US6033596A

公开(公告)日：2000-03-07

申请号：US800562

申请日：1997-02-18

Applicant: Vlasta Brusic Kaufman ,  Shumin Wang

Inventor： Vlasta Brusic Kaufman ,  Shumin Wang

IPC: C09G1/02 ,  C09K13/00 ,  C09K13/06

CPC classification number: C09G1/02

Abstract: A chemical mechanical polishing slurry comprising a first oxidizer of urea hydrogen peroxide, a second oxidizer, an organic acid, and an abrasive, and a method for using the chemical mechanical polishing slurry to remove titanium, titanium nitride, and an aluminum alloy containing layer from a substrate.

Abstract translation: 包括尿素过氧化氢的第一氧化剂，第二氧化剂，有机酸和研磨剂的化学机械抛光浆料，以及使用化学机械抛光浆料从钛，氮化钛和含铝合金层中除去的方法 底物。

公开(公告)号：US08125225B2

公开(公告)日：2012-02-28

申请号：US12449514

申请日：2008-02-13

Applicant: Alan P. Koretsky ,  Jeff H. Duyn ,  Shumin Wang ,  Hellmut Merkic

Inventor： Alan P. Koretsky ,  Jeff H. Duyn ,  Shumin Wang ,  Hellmut Merkic

IPC: G01V3/00

CPC classification number: A61K33/245 ,  A61K31/29 ,  A61K45/06

Abstract: An apparatus for imaging includes: a main magnet to generate a substantially uniform main B0 magnetic field through an examination region; and a coil system including a first coil layer and a second coil layer disposed substantially parallel to the first coil layer with a defined air gap in a radial direction, the first coil layer including a first coil array, the second coil layer including a second coil array, the first and second coil arrays being coupled and cooperating to selectively produce a prespecified B1 magnetic field within the examination region.

Abstract translation: 用于成像的装置包括：主磁体，用于通过检查区域产生基本上均匀的主B0磁场; 以及包括第一线圈层和第二线圈层的线圈系统，所述第一线圈层和第二线圈层基本上平行于具有限定的气隙的径向方向设置的第一线圈层，所述第一线圈层包括第一线圈阵列，所述第二线圈层包括第二线圈 阵列，第一和第二线圈阵列被耦合并配合以在检查区域内选择性地产生预定的B1磁场。

公开(公告)号：US20090095320A1

公开(公告)日：2009-04-16

申请号：US11920248

申请日：2006-05-12

Applicant: Shumin Wang ,  Chris Chang Yu

Inventor： Shumin Wang ,  Chris Chang Yu

IPC: B08B3/08 ,  G03F7/42 ,  B08B3/12 ,  B08B1/04

CPC classification number: G03F7/423

Abstract: A new composition for removing a photoresist layer and a method for using the same are disclosed. The composition comprises a polar solvent and an oxidant. The composition according to the present invention comprises chemical substances with less toxicity and flammability at lower contents, which makes it more friendly to environment and decreases the expense for disposing the chemical waste. The method for using the composition shortens the time for cleaning and removes the residue more completely, thereby enhancing the electrical conductivity.

Abstract translation: 公开了一种用于除去光致抗蚀剂层的新组合物及其使用方法。 该组合物包含极性溶剂和氧化剂。 根据本发明的组合物包含毒性较小且易燃性低的化学物质，使其对环境更加友好，并降低处理化学废物的费用。 使用该组合物的方法缩短了清洗时间，更完全地除去残留物，从而提高导电性。

公开(公告)号：US07381648B2

公开(公告)日：2008-06-03

申请号：US10616335

申请日：2003-07-09

Applicant: Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

Inventor： Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

IPC: H01L21/302

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463

Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.

Abstract translation: 包含氧化剂，络合剂，研磨剂和任选的表面活性剂的化学机械抛光浆料以及使用化学机械抛光浆料去除铜合金，钛，氮化钛，钽和氮化钽的层的方法 从底物。 浆料不包括单独的成膜剂。

公开(公告)号：US07044836B2

公开(公告)日：2006-05-16

申请号：US10419580

申请日：2003-04-21

Applicant: Fred F. Sun ,  Bin Lu ,  Ethan K. Lightle ,  Shumin Wang

Inventor： Fred F. Sun ,  Bin Lu ,  Ethan K. Lightle ,  Shumin Wang

IPC: B24B1/00

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: The invention provides a method of polishing a substrate, which method comprises the steps of (i) providing a polishing composition, (ii) providing a substrate comprising at least one metal layer, and (iii) abrading at least a portion of the metal layer with the polishing composition to polish the substrate. The polishing composition comprises an abrasive and a liquid carrier, wherein the abrasive comprises metal oxide particles having a surface with a silane compound adhered to a portion thereof and a polymer adhered to the silane compound and wherein the polymer is selected from the group consisting of water-soluble polymers and water-emulsifiable polymers. The invention also provides a polishing composition as described above, wherein the total amount of abrasive particles present in the polishing composition is no greater than about 20% by weight of the polishing composition, and the metal oxide particles do not comprise zirconia.

Abstract translation: 本发明提供一种抛光基材的方法，该方法包括以下步骤：（i）提供抛光组合物，（ii）提供包括至少一个金属层的基材，和（iii）研磨金属层的至少一部分 用抛光组合物抛光底物。 抛光组合物包括研磨剂和液体载体，其中磨料包含金属氧化物颗粒，其表面具有粘附到其一部分上的硅烷化合物，和聚合物粘附到硅烷化合物上，并且其中聚合物选自水 可溶性聚合物和水可乳化聚合物。 本发明还提供了如上所述的抛光组合物，其中存在于抛光组合物中的磨料颗粒的总量不大于抛光组合物的约20重量％，并且金属氧化物颗粒不包含氧化锆。