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公开(公告)号:US10207236B2
公开(公告)日:2019-02-19
申请号:US15044734
申请日:2016-02-16
Applicant: SunEdison, Inc.
Inventor: Alexis Grabbe , Pramatha Payra
IPC: C01B33/027 , C01B33/029 , B01J8/18 , G01N21/65 , G05D7/00 , C01B33/03 , B01J19/00
Abstract: A gas decomposition reactor for the decomposition of a gas into a mixture of solid and gaseous by-products is disclosed. The gas decomposition reactor includes a reactor vessel, a Raman spectrometer, and a processor. The reactor vessel has an inlet for receiving inlet gas and an exhaust outlet for releasing exhaust gas. The Raman spectrometer is connected with the exhaust outlet for determining a chemical conversion within the reactor chamber and generating a corresponding signal. The processor is connected with the Raman spectrometer to receive the signal from the Raman spectrometer. The processor is capable of comparing the signal with a set of values and calculating differences between the signal and the set of values. The processor is connected with the inlet to regulate a flow of the inlet gas.
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公开(公告)号:US10100428B2
公开(公告)日:2018-10-16
申请号:US14802729
申请日:2015-07-17
Applicant: SunEdison, Inc.
Inventor: Jihong Chen , Tirumani N. Swaminathan
Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.
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公开(公告)号:US20180187329A1
公开(公告)日:2018-07-05
申请号:US15398407
申请日:2017-01-04
Applicant: SunEdison, Inc.
Inventor: Salvador Zepeda , Richard J. Phillips , Christopher Vaughn Luers , Steven Lawrence Kimbel , Harold W. Korb , John D. Holder , Carissima Marie Hudson , Hariprasad Sreedharamurthy , Stephan Haringer , Marco Zardoni
CPC classification number: C30B15/20 , C30B15/002 , C30B15/02 , C30B15/12 , C30B29/06
Abstract: Systems and methods for forming an ingot from a melt are disclosed. A system includes a crucible defining a cavity for receiving the melt, and a first and second barrier to inhibit movement of the melt. A first passageway and a second passageway are arranged to allow the melt located within an outer zone to move into and through a transition zone and into an inner zone. Conditioning members are placed in at least one of the zones and arranged to contact the melt to reduce the number of micro-voids in the melt.
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公开(公告)号:US20180026151A1
公开(公告)日:2018-01-25
申请号:US15540842
申请日:2016-01-05
Applicant: Aditya Janardan DESHPANDE , SUNEDISON, INC.
Inventor: Aditya Janardan Deshpande , Sandeep Rammohan Koppikar , Vikrant Ashok Chaudhari , Eugene Rhee , Dinesh Somabhai Amin
IPC: H01L31/05 , H01L31/054
Abstract: A method for texturing a photovoltaic module ribbon on a photovoltaic cell including a plurality of first electrodes on a first side and a plurality of second electrodes on a second side, and coupling a first photovoltaic module ribbon to the plurality of first electrodes. The method also includes positioning the photovoltaic cell on a textured base having a texture embodied thereon, where the first photovoltaic module ribbon is substantially contacting the texture. The method further includes coupling a second photovoltaic module ribbon to the plurality of second electrodes, and transferring the texture of the textured base to the first ribbon using heat energy released when the second photovoltaic module ribbon is coupled to the plurality of second electrodes.
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公开(公告)号:US09873159B2
公开(公告)日:2018-01-23
申请号:US14983954
申请日:2015-12-30
Applicant: SunEdison, Inc.
Inventor: Omid Rezvanian , Larry Wayne Shive , Rituraj Nandan , Dale A. Witte , Edward Calvin
CPC classification number: B23D65/00 , B23D61/185 , B28D5/045
Abstract: A method for designing a diamond coated wire for use in a wafer slicing system includes adjusting an initial diamond size distribution until an intermediate diamond size distribution is generated, wherein the intermediate diamond size distribution has a corresponding simulated penetration thickness value less than or equal a predetermined penetration thickness value, and wherein penetration thickness is a parameter proportional to a depth of subsurface damage that would occur when slicing an ingot using a diamond coated wire having an associated diamond size distribution. The method may include adjusting the intermediate diamond size distribution until a final diamond size distribution is generated, wherein the final diamond size distribution has a maximum diamond grit size that is substantially equal to a predetermined maximum diamond grit size, and manufacturing the diamond coated wire such that the diamond coated wire has a plurality of diamond grits that fit the final diamond size distribution.
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公开(公告)号:US09863063B2
公开(公告)日:2018-01-09
申请号:US14107743
申请日:2013-12-16
Applicant: SunEdison, Inc.
Inventor: Tirumani N. Swaminathan
CPC classification number: C30B15/12 , C30B11/002 , C30B15/002 , Y10T117/1052
Abstract: A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.
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公开(公告)号:US09850137B2
公开(公告)日:2017-12-26
申请号:US14650959
申请日:2013-12-27
Applicant: SunEdison, Inc.
Inventor: Jia Wei Chew , Baisheng Zou
IPC: C01B33/021 , B01J8/18
CPC classification number: C01B33/021 , B01J8/1809 , B01J2208/00017 , B01J2208/00672 , B01J2219/00247
Abstract: A method of improving the operation of polysilicon fluidized bed reactors is disclosed. The present disclosure is directed to the optimization of axial temperature gradients in gas-solid fluidized bed systems. Varying the width of the particle size distribution in the reactor alters the temperature gradient within the reactor, thereby providing a means of a better control of internal temperature profiles and hence better reactor performance.
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公开(公告)号:US20160333474A1
公开(公告)日:2016-11-17
申请号:US14709856
申请日:2015-05-12
Applicant: SunEdison, Inc.
Inventor: Vivek Tomar , Lee William Ferry , Puneet Gupta , Satish Bhusarapu , Richard G. Schrenker
IPC: C23C16/44 , C23C16/24 , C23C16/442
CPC classification number: C23C16/4409 , B01J3/03 , B01J3/042 , C23C16/24 , C23C16/442
Abstract: Clamping assemblies for sealing an annular chamber and reaction chamber of a reactor system are disclosed. The clamping assemblies may include actuators that are symmetrically arranged in two or more independently controllable groups of actuators.
Abstract translation: 公开了用于密封反应器系统的环形室和反应室的夹紧组件。 夹紧组件可以包括对称地布置在两个或更多个可独立控制的致动器组中的致动器。
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公开(公告)号:US09487406B2
公开(公告)日:2016-11-08
申请号:US14622326
申请日:2015-02-13
Applicant: SunEdison, Inc.
Inventor: Puneet Gupta , Henry F. Erk , Alexis Grabbe
IPC: B01J8/00 , B01J8/18 , B01J19/00 , B01J19/08 , C01B33/00 , C01B33/04 , C01B33/08 , C01B33/10 , C25B1/00 , C01B33/107
CPC classification number: C01B33/043 , B01J8/18 , B01J19/087 , B01J2208/00946 , B01J2219/0803 , C01B33/107 , C01B33/1071 , C01B33/10742 , C25B1/006
Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.
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公开(公告)号:US09394180B2
公开(公告)日:2016-07-19
申请号:US13871205
申请日:2013-04-26
Applicant: SunEdison, Inc.
Inventor: Satish Bhusarapu , Yue Huang , Puneet Gupta
IPC: C01B33/03 , B01J8/24 , C01B33/039 , C01B33/107
CPC classification number: C01B33/03 , B01J8/24 , C01B33/039 , C01B33/10742 , C01B33/10763 , C01B33/10773
Abstract: Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.
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