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    Method of controlling metal silicide formation
    21.
    发明授权
    Method of controlling metal silicide formation 有权
    控制金属硅化物形成的方法

    公开(公告)号：US07811877B2

    公开(公告)日：2010-10-12

    申请号：US11778252

    申请日：2007-07-16

    Applicant: Sundar Ramamurthy ,  Majeed A. Foad

    Inventor： Sundar Ramamurthy ,  Majeed A. Foad

    IPC: H01L21/8238

    CPC classification number: H01L29/7833 ,  H01L21/26513 ,  H01L21/823814 ,  H01L29/665

    Abstract: Methods of processing silicon substrates to form metal silicide layers thereover having more uniform thicknesses are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate having a plurality of exposed regions comprising silicon, wherein at least two of the plurality of exposed regions have a different rate of formation of a metal silicide layer thereover; doping at least one of the exposed regions to control the rate of formation of a metal silicide layer thereover; and forming a metal silicide layer upon the exposed regions of the substrate, wherein the metal silicide layer has a reduced maximum thickness differential between the exposed regions.

    Abstract translation: 本文提供了处理硅衬底以形成具有更均匀厚度的金属硅化物层的方法。 在一些实施例中，处理衬底的方法包括提供具有包括硅的多个暴露区域的衬底，其中多个暴露区域中的至少两个具有与其上不同的金属硅化物层的形成速率; 掺杂至少一个暴露区域以控制其上的金属硅化物层的形成速率; 以及在所述衬底的所述暴露区域上形成金属硅化物层，其中所述金属硅化物层在所述暴露区域之间具有减小的最大厚度差。

    PULSED LASER ANNEAL SYSTEM ARCHITECTURE
    23.
    发明申请
    PULSED LASER ANNEAL SYSTEM ARCHITECTURE 有权
    脉冲激光神经系统结构

    公开(公告)号：US20090045182A1

    公开(公告)日：2009-02-19

    申请号：US11839436

    申请日：2007-08-15

    Applicant: ALEXANDER N. LERNER ,  Timothy N. Thomas ,  Sundar Ramamurthy

    Inventor： ALEXANDER N. LERNER ,  Timothy N. Thomas ,  Sundar Ramamurthy

    IPC: B23K26/42 ,  B23K26/02

    CPC classification number: H01L21/67109 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67745 ,  H01L21/67748

    Abstract: Embodiments of the present invention provide method and apparatus for annealing semiconductor substrates. One embodiment of the present invention provides a semiconductor processing chamber comprising a first substrate support configured to support a substrate, a second substrate support configured to support a substrate, a shuttle coupled to the first substrate support and configured to move the first substrate support between a processing zone and a first loading zone, wherein the processing zone having a processing volume configured to alternately accommodating the first substrate support and the second substrate support.

    Abstract translation: 本发明的实施例提供了半导体衬底的退火方法和装置。 本发明的一个实施例提供一种半导体处理室，其包括被配置为支撑基板的第一基板支撑件，被配置为支撑基板的第二基板支撑件，耦合到第一基板支撑件的梭子，并被配置成将第一基板支撑件 处理区域和第一装载区域，其中所述处理区域具有被配置为交替地容纳所述第一衬底支撑件和所述第二衬底支撑件的处理容积。

    Cylinder for thermal processing chamber
    24.
    发明授权
    Cylinder for thermal processing chamber 有权
    用于热处理腔的气缸

    公开(公告)号：US07241345B2

    公开(公告)日：2007-07-10

    申请号：US10463129

    申请日：2003-06-16

    Applicant: Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Ho T. Fang

    Inventor： Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Ho T. Fang

    IPC: C23C16/00

    CPC classification number: H01L21/68735 ,  C23C16/045 ,  C23C16/24 ,  H01L21/67115 ,  H01L21/68757

    Abstract: The cylinder includes a core and a coating covering most of the core. The core is made from a heat-resistant or insulating material. The core has inner and outer side walls and opposing first and second ends. The outer side wall is further away from a central longitudinal axis of the cylinder than the inner wall. The first end is configured to contact an edge ring that supports a semiconductor substrate. The coating is substantially opaque to infrared radiation, and covers all external surfaces of the core except for the first end. The core is preferably made from quartz or ceramics, while the coating is preferably made from a polysilicon.

    Abstract translation: 圆筒包括芯和覆盖芯的大部分的涂层。 芯由耐热或绝缘材料制成。 芯具有内侧壁和外侧壁以及相对的第一和第二端。 外侧壁比内壁更远离圆柱体的中心纵向轴线。 第一端被配置为接触支撑半导体衬底的边缘环。 涂层对于红外辐射基本上是不透明的，并且覆盖除了第一端之外的芯的所有外表面。 芯优选由石英或陶瓷制成，而涂层优选由多晶硅制成。

    Backside rapid thermal processing of patterned wafers
    25.
    发明申请
    Backside rapid thermal processing of patterned wafers 有权
    图案化晶片的背面快速热处理

    公开(公告)号：US20070104470A1

    公开(公告)日：2007-05-10

    申请号：US11610759

    申请日：2006-12-14

    Applicant: Wolfgang Aderhold ,  Sundar Ramamurthy ,  Aaron Hunter

    Inventor： Wolfgang Aderhold ,  Sundar Ramamurthy ,  Aaron Hunter

    IPC: F21V7/00

    CPC classification number: H01L21/67115 ,  F27B17/0025 ,  F27D19/00 ,  F27D21/0014

    Abstract: Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.

    Abstract translation: 公开了诸如快速热处理（RTP）装置和方法的晶片或其它基板的热处理的装置和方法。 辐射灯阵列将辐射引导到晶片的背面以加热晶片。 在一个或多个实施例中，其上形成图案化集成电路的晶片的正面面向辐射反射器。 在一个或多个实施例中，从反射器一侧热温度地监测晶片的温度和反射率。

    Processing multilayer semiconductors with multiple heat sources
    27.
    发明申请
    Processing multilayer semiconductors with multiple heat sources 有权

    公开(公告)号：US20060018639A1

    公开(公告)日：2006-01-26

    申请号：US11187188

    申请日：2005-07-22

    Applicant: Sundar Ramamurthy ,  Andreas Hegedus ,  Randhir Thakur

    Inventor： Sundar Ramamurthy ,  Andreas Hegedus ,  Randhir Thakur

    IPC: A21B2/00

    CPC classification number: H01L21/67103

    Abstract: A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.

    Backside rapid thermal processing of patterned wafers
    28.
    发明授权
    Backside rapid thermal processing of patterned wafers 有权
    图案化晶片的背面快速热处理

    公开(公告)号：US09431278B2

    公开(公告)日：2016-08-30

    申请号：US12193439

    申请日：2008-08-18

    Applicant: Wolfgang Aderhold ,  Sundar Ramamurthy ,  Aaron Hunter

    Inventor： Wolfgang Aderhold ,  Sundar Ramamurthy ,  Aaron Hunter

    IPC: F27B5/14 ,  F26B19/00 ,  H01L21/67 ,  F27B17/00 ,  F27D19/00 ,  F27D21/00

    CPC classification number: H01L21/67115 ,  F27B17/0025 ,  F27D19/00 ,  F27D21/0014

    Abstract: Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.

    Abstract translation: 公开了诸如快速热处理（RTP）装置和方法的晶片或其它基板的热处理的装置和方法。 辐射灯阵列将辐射引导到晶片的背面以加热晶片。 在一个或多个实施例中，其上形成图案化集成电路的晶片的正面面向辐射反射器。 在一个或多个实施例中，从反射器一侧热温度地监测晶片的温度和反射率。

    Water cooled gas injector
    30.
    发明申请
    Water cooled gas injector 失效
    水冷气体注射器

    公开(公告)号：US20120031332A1

    公开(公告)日：2012-02-09

    申请号：US13277385

    申请日：2011-10-20

    Applicant: Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    Inventor： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    IPC: C23C16/00 ,  H01L21/31

    CPC classification number: H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

    Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

    Abstract translation: 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室保持在低于20托的低压，并且有利地将基底保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

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