中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

59 records (took 0.018 seconds)

    Direct coupled biasing circuit for high frequency applications
    21.
    发明授权
    Direct coupled biasing circuit for high frequency applications 有权

    公开(公告)号：US10476486B2

    公开(公告)日：2019-11-12

    申请号：US15646776

    申请日：2017-07-11

    Applicant: Tensorcom, Inc.

    Inventor： Zaw Soe ,  KhongMeng Tham

    IPC: H03K3/012 ,  H03K17/56 ,  H01Q1/50 ,  H04B5/00 ,  G05F3/16

    Abstract: This invention eliminates the need for “capacitor coupling” or “transformer coupling,” and the associated undesirable parasitic capacitance and inductance associated with these coupling techniques when designing high frequency (˜60 GHz) circuits. At this frequency, the distance between two adjacent stages needs to be minimized. A resonant circuit in series with the power or ground leads is used to isolate a biasing signal from a high frequency signal. The introduction of this resonant circuit allows a first stage to be “directly coupled” to a next stage using a metallic trace. The “direct coupling” technique passes both the high frequency signal and the biasing voltage to the next stage. The “direct coupling” approach overcomes the large die area usage when compared to either the “AC coupling” or “transformer coupling” approach since neither capacitors nor transformers are required to transfer the high frequency signals between stages.

    Method and apparatus of an input resistance of a passive mixer to broaden the input matching bandwidth of a common source/gate LNA
    22.
    发明授权
    Method and apparatus of an input resistance of a passive mixer to broaden the input matching bandwidth of a common source/gate LNA 有权

    公开(公告)号：US10461703B2

    公开(公告)日：2019-10-29

    申请号：US15884966

    申请日：2018-01-31

    Applicant: Tensorcom, Inc.

    Inventor： Zaw Soe

    IPC: H04B1/16 ,  H03F3/19 ,  H03F1/22 ,  H03F1/42 ,  H03F3/387 ,  H03F3/193 ,  H03D7/12 ,  H03D7/14 ,  H03D7/16 ,  H03F3/45 ,  H04L27/38

    Abstract: A common-source Low Noise Amplifier (LNA) comprises a first spiral inductor coupled to a source of a first transistor, a second spiral inductor coupled to a drain of a second transistor, and a third inductor connecting the first transistor to the second transistor. The third inductor is configurable to enable a first capacitance to be coupled in parallel to form a bandpass filter. The first spiral inductor is configurable to enable a second capacitance to be coupled in parallel to form a resonant circuit. A variation of the LNA further includes a drain of a third transistor coupled to a gate of a fourth transistor with a first width, a source of the third transistor coupled to the resonant circuit, and an oscillator clock configured to operate at a first frequency that enables the third transistor, wherein the third transistor presents a first impedance to the resonant circuit, causing the resonant circuit to have a first bandwidth.

    Method and apparatus to detect LO leakage and image rejection using a single transistor
    26.
    发明授权
    Method and apparatus to detect LO leakage and image rejection using a single transistor 有权
    使用单个晶体管检测LO泄漏和图像抑制的方法和装置

    公开(公告)号：US09450537B2

    公开(公告)日：2016-09-20

    申请号：US14467075

    申请日：2014-08-25

    Applicant: Tensorcom, Inc.

    Inventor： KhongMeng Tham ,  Huainan Ma ,  Zaw Soe ,  Ricky Lap Kei Cheung

    IPC: G06G7/12 ,  H03D3/00 ,  H03D7/16

    CPC classification number: H04B1/0475 ,  H03C2200/0058 ,  H03D3/008 ,  H03D3/009 ,  H03D7/125 ,  H03D7/165 ,  H04B1/04 ,  H04B1/0458 ,  H04B2001/0408

    Abstract: LO leakage and Image are common and undesirable effects in typical transmitters. Typically, thirty complex hardware and algorithms are used to calibrate and reduce these two impairments. A single transistor that draws essentially no de current and occupies a very small area, is used to detect the LO leakage and Image Rejection signals. The single transistor operating as a square law device, is used to mix the signals at the input and output ports of the power amplifier (PA). The mixed signal generated by the single transistor enables the simultaneous calibration of the LO leakage and Image Rejection.

    Abstract translation: LO泄漏和图像在典型的发射器中是常见的和不良影响。 通常，使用三十个复杂的硬件和算法来校准和减少这两个损伤。 基本上没有去电流并占据非常小的面积的单个晶体管用于检测LO泄漏和图像抑制信号。 作为平方律器件工作的单个晶体管用于混合功率放大器（PA）输入和输出端口的信号。 由单个晶体管产生的混合信号可以同时校准LO泄漏和图像抑制。

    Method and apparatus of an architecture to switch equalization based on signal delay spread
    27.
    发明授权
    Method and apparatus of an architecture to switch equalization based on signal delay spread 有权
    基于信号延迟扩展来切换均衡的架构的方法和装置

    公开(公告)号：US09391817B2

    公开(公告)日：2016-07-12

    申请号：US14223516

    申请日：2014-03-24

    Applicant: Tensorcom, Inc.

    Inventor： Ricky Lap Kei Cheung

    IPC: H03H7/30 ,  H03H7/40 ,  H03K5/159 ,  H04L25/03 ,  H04L27/26 ,  H04L25/02

    CPC classification number: H04L25/03159 ,  H04L25/0212 ,  H04L25/03019 ,  H04L27/2647 ,  H04L2025/03414

    Abstract: The 60 GHz channel between the transmitter and receiver can have AWGN characteristics allowing a Time Domain Equalizer (TDE) to be used at the receiver instead of a Frequency Domain Equalizer (FDE). The complexity of performing matrix inversion on a received signal is reduced when directional antennas are used in a 60 GHz system. Incorporating the TDE in place of the FDE saves almost an order of magnitude in power dissipation. For portable units, such a savings is beneficial since the battery life can be extended. The signal quality of wireless channel is based on the characteristics of the received signal to switch the equalization operation from a system performing FDE to TDE and vice versa. The receiver adapts to the received signal to reduce the power dissipation of the system.

    Abstract translation: 发射机和接收机之间的60 GHz信道可以具有AWGN特性，允许在接收机而不是频域均衡器（FDE）使用时域均衡器（TDE）。 当在60GHz系统中使用定向天线时，对接收信号执行矩阵反演的复杂度降低。 结合TDE代替FDE节省了功耗的几乎一个数量级。 对于便携式设备，这样的节省是有益的，因为电池寿命可以延长。 无线信道的信号质量基于接收信号的特性，以将均衡操作从执行FDE的系统切换到TDE，反之亦然。 接收机适应接收到的信号，以减少系统的功耗。

    Method and Apparatus to Detect LO Leakage and Image Rejection using a Single Transistor
    28.
    发明申请
    Method and Apparatus to Detect LO Leakage and Image Rejection using a Single Transistor 有权
    使用单晶体管检测LO泄漏和图像抑制的方法和装置

    公开(公告)号：US20160056764A1

    公开(公告)日：2016-02-25

    申请号：US14467075

    申请日：2014-08-25

    Applicant: Tensorcom, Inc.

    Inventor： KhongMeng Tham ,  Huainan Ma ,  Zaw Soe ,  Ricky Lap Kei Cheung

    IPC: H03D7/14

    CPC classification number: H04B1/0475 ,  H03C2200/0058 ,  H03D3/008 ,  H03D3/009 ,  H03D7/125 ,  H03D7/165 ,  H04B1/04 ,  H04B1/0458 ,  H04B2001/0408

    Abstract: LO leakage and Image are common and undesirable effects in typical transmitters. Typically, thirty complex hardware and algorithms are used to calibrate and reduce these two impairments. A single transistor that draws essentially no de current and occupies a very small area, is used to detect the LO leakage and Image Rejection signals. The single transistor operating as a square law device, is used to mix the signals at the input and output ports of the power amplifier (PA). The mixed signal generated by the single transistor enables the simultaneous calibration of the LO leakage and Image Rejection.

    Abstract translation: LO泄漏和图像在典型的发射器中是常见的和不良影响。 通常，使用三十个复杂的硬件和算法来校准和减少这两个损伤。 基本上没有去电流并占据非常小的面积的单个晶体管用于检测LO泄漏和图像抑制信号。 作为平方律器件工作的单个晶体管用于混合功率放大器（PA）输入和输出端口的信号。 由单个晶体管产生的混合信号可以同时校准LO泄漏和图像抑制。

    Direct Coupled Biasing Circuit for High Frequency Applications
    29.
    发明申请
    Direct Coupled Biasing Circuit for High Frequency Applications 有权
    直接耦合偏置电路用于高频应用

    公开(公告)号：US20150357999A1

    公开(公告)日：2015-12-10

    申请号：US14828955

    申请日：2015-08-18

    Applicant: TENSORCOM, INC.

    Inventor： Zaw Soe ,  KhongMeng Tham

    IPC: H03K3/012 ,  H01Q1/50 ,  H03K17/56

    CPC classification number: H03K3/012 ,  G05F3/16 ,  H01Q1/50 ,  H03K17/56 ,  H04B5/0075

    Abstract: This invention eliminates the need for “capacitor coupling” or “transformer coupling,” and the associated undesirable parasitic capacitance and inductance associated with these coupling techniques when designing high frequency (˜60 GHz) circuits. At this frequency, the distance between two adjacent stages needs to be minimized. A resonant circuit in series with the power or ground leads is used to isolate a biasing signal from a high frequency signal. The introduction of this resonant circuit allows a first stage to be “directly coupled” to a next stage using a metallic trace. The “direct coupling” technique passes both the high frequency signal and the biasing voltage to the next stage. The “direct coupling” approach overcomes the large die area usage when compared to either the “AC coupling” or “transformer coupling” approach since neither capacitors nor transformers are required to transfer the high frequency signals between stages.

    Abstract translation: 当设计高频（〜60GHz）电路时，本发明消除了对“电容器耦合”或“变压器耦合”的需求以及与这些耦合技术相关联的不期望的寄生电容和电感。 在这个频率下，两个相邻阶段之间的距离需要最小化。 与电源或接地引线串联的谐振电路用于将偏置信号与高频信号隔离开来。 该谐振电路的引入允许使用金属迹线将第一级“直接耦合”到下一级。 “直接耦合”技术将高频信号和偏置电压都通过下一级。 与“交流耦合”或“变压器耦合”方法相比，“直接耦合”方法克服了大的管芯面积使用，因为既不需要电容器也不需要变压器来在级之间传输高频信号。

    Method and apparatus of a crystal oscillator with a noiseless and amplitude based start up control loop
    30.
    发明授权
    Method and apparatus of a crystal oscillator with a noiseless and amplitude based start up control loop 有权
    具有无噪声和振幅的启动控制回路的晶体振荡器的方法和装置

    公开(公告)号：US08816786B2

    公开(公告)日：2014-08-26

    申请号：US13632173

    申请日：2012-10-01

    Applicant: Tensorcom, Inc.

    Inventor： KhongMeng Tham

    IPC: H03L5/00 ,  H03B5/36

    CPC classification number: H03B5/364 ,  H03B5/06 ,  H03B2200/0088 ,  H03B2200/0094 ,  H03B2201/031 ,  H03L5/00

    Abstract: A large gain is used to start up the oscillation of the crystal quickly. Once the oscillation starts, the amplitude is detected. A control circuit determines based on the measured amplitude to disable a low resistance path in the controlled switch array to reduce the applied gain below the power dissipation specification of the crystal. Another technique introduces a mixed-signal controlled power supply multi-path resistive array which tailors the maximum current to the crystal. A successive approximation register converts the amplitude into several partitions and enables/disables one of several power routing paths to the inverter of the oscillator. This allows a better match between the crystal selected by the customer and the on-chip drive circuitry to power up the oscillator without stressing the crystal. The “l/f” noise of the oscillator circuit is minimized by operating transistors in the triode region instead of the linear region.

    Abstract translation: 使用大的增益快速启动晶体振荡。 一旦振荡开始，就检测振幅。 控制电路基于测量的幅度来确定禁用受控开关阵列中的低电阻路径，以将施加的增益降低到低于晶体的功率耗散规格。 另一种技术引入了一种混合信号控制电源多路径电阻阵列，可以调整晶体的最大电流。 逐次逼近寄存器将振幅转换成几个分区，并使能/禁用振荡器的反相器的几个电源路由路径之一。 这允许由客户选择的晶体和片上驱动电路之间更好地匹配，以在不强调晶体的情况下加电振荡器。 通过在三极管区域中操作晶体管而不是线性区域来使振荡器电路的“l / f”噪声最小化。

Patent Agency Ranking