公开(公告)号：US20140231941A1

公开(公告)日：2014-08-21

申请号：US14182660

申请日：2014-02-18

Applicant: Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

Inventor： Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

IPC: H01L43/02

CPC classification number: H01F10/3254 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/325 ,  H01F10/3286 ,  H01L27/228

Abstract: Magnetoresistive structures, memory devices including the same, and methods of manufacturing the magnetoresistive structures and the memory devices, include a plurality of free layers each having a magnetization direction that is changeable, a separation layer covering at least two of the plurality of free layers, and at least one pinned layer opposing the plurality of free layers. The separation layer is between the at least one pinned layer and the plurality of free layers. The at least one pinned layer has a magnetization direction that is fixed.

Abstract translation: 磁阻结构，包括其的存储器件以及制造磁阻结构和存储器件的方法包括多个具有可变化的磁化方向的自由层，分离层覆盖多个自由层中的至少两个， 以及与多个自由层相对的至少一个钉扎层。 分离层位于至少一个钉扎层和多个自由层之间。 所述至少一个钉扎层具有固定的磁化方向。

公开(公告)号：US20140211552A1

公开(公告)日：2014-07-31

申请号：US14162144

申请日：2014-01-23

Applicant: Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

Inventor： Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

IPC: G11C11/16 ,  H01L43/02

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/18 ,  H01L27/222 ,  H01L43/08

Abstract: A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.

Abstract translation: 使用旋转门厅效应的存储器件以及制造和操作存储器件的方法包括将第一工作电流施加到存储器件的位线，使得自旋电流被施加到耦合到磁性隧道结（MTJ）的单元 由于位线中的材料而导致位线，其中位线经由MTJ单元电连接到字线，并且字线与位线相交。

公开(公告)号：US08614014B2

公开(公告)日：2013-12-24

申请号：US12662215

申请日：2010-04-06

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo ,  Ji-young Bae

IPC: G11B5/66 ,  G11C19/02

CPC classification number: G11B5/72 ,  G11B5/7325 ,  G11C11/14

Abstract: A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (β).

Abstract translation: 一种磁存储器件包括其中分别在磁性层的上表面和下表面上形成不同非磁性层的轨道。 两个非磁性层中的一个包括原子序数大于或等于12的元素。因此，磁性层具有相对高的非绝热性（β）。

公开(公告)号：US08427246B2

公开(公告)日：2013-04-23

申请号：US12929932

申请日：2011-02-25

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

IPC: H01L29/00

CPC classification number: H01L43/12 ,  H01L43/08 ,  H03B15/006

Abstract: Oscillators and methods of manufacturing and operating the same are provided, the oscillators include a pinned layer, a free layer and a barrier layer having at least one filament between the pinned layer and the free layer. The pinned layer may have a fixed magnetization direction. The free layer corresponding to the pinned layer. The at least one filament in the barrier layer may be formed by applying a voltage between the pinned layer and the free layer. The oscillators may be operated by inducing precession of a magnetic moment of at least one region of the free layer that corresponds to the at least one filament, and detecting a resistance change of the oscillator due to the precession.

Abstract translation: 提供了振荡器和制造和操作振荡器的方法，振荡器包括钉扎层，自由层和在被钉扎层和自由层之间具有至少一根细丝的阻挡层。 被钉扎层可以具有固定的磁化方向。 对应于钉扎层的自由层。 可以通过在被钉扎层和自由层之间施加电压来形成阻挡层中的至少一个细丝。 振荡器可以通过引起对应于至少一根灯丝的自由层的至少一个区域的磁矩的进动并且检测由于进动而引起的振荡器的电阻变化来操作。

公开(公告)号：US08233305B2

公开(公告)日：2012-07-31

申请号：US12458249

申请日：2009-07-07

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T29/49069

Abstract: A magnetic structure includes a first portion and a plurality of second portions. The first portion extends in a first direction. The plurality of second portions extend from ends of the first portion in a second direction. The first and second directions are perpendicular to one another. Two magnetic domains magnetized in directions opposite to each other and a magnetic domain wall between the magnetic domains are formed in the magnetic structure.

Abstract translation: 磁性结构包括第一部分和多个第二部分。 第一部分沿第一方向延伸。 多个第二部分在第二方向从第一部分的端部延伸。 第一和第二方向彼此垂直。 在磁性结构中形成两个彼此相反方向磁化的磁畴和磁畴之间的磁畴壁。

公开(公告)号：US20120139069A1

公开(公告)日：2012-06-07

申请号：US13313361

申请日：2011-12-07

Applicant: Kwang-seok Kim ,  U-In Chung ,  Jai-kwang Shin ,  Kee-won Kim ,  Sung-chul Lee ,  Ung-hwan Pi

Inventor： Kwang-seok Kim ,  U-In Chung ,  Jai-kwang Shin ,  Kee-won Kim ,  Sung-chul Lee ,  Ung-hwan Pi

IPC: H01L29/82 ,  H01L21/04

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.

Abstract translation: 磁存储器件的存储节点包括：下磁层，形成在下磁层上的隧道势垒层和形成在隧道势垒上的自由磁层。 自由磁性层具有响应于自旋电流而可切换的磁化方向。 自由磁性层具有围绕形成有自由磁性层的至少一个材料层的盖结构。

公开(公告)号：US20120038430A1

公开(公告)日：2012-02-16

申请号：US13099684

申请日：2011-05-03

Applicant: Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

Inventor： Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

IPC: H03B5/30

CPC classification number: H03B15/006

Abstract: Oscillators and methods of operating the same, the oscillators include a pinned layer having a fixed magnetization direction, a first free layer over the pinned layer, and a second free layer over the first free layer. The oscillators are configured to generate a signal using precession of a magnetic moment of at least one of the first and second free layers.

Abstract translation: 振荡器及其操作方法，振荡器包括具有固定磁化方向的钉扎层，被钉扎层上的第一自由层，以及在第一自由层上的第二自由层。 振荡器被配置为使用第一和第二自由层中的至少一个的磁矩的进动来产生信号。

公开(公告)号：US07924593B2

公开(公告)日：2011-04-12

申请号：US12232660

申请日：2008-09-22

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae

IPC: G11C16/00

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0841

Abstract: Provided are an information storage device and a method of operating the same. The information storage device includes: a magnetic layer having a plurality of magnetic domain regions and a magnetic domain wall interposed between the magnetic domain regions; a first unit disposed on a first region which is one of the plurality of magnetic domain regions for recording information to the first region; a second unit connected to the first unit for inducing a magnetic field so as to record information to the first region.

Abstract translation: 提供了一种信息存储装置及其操作方法。 信息存储装置包括：具有多个磁畴区域的磁性层和介于磁畴区域之间的磁畴壁; 第一单元，设置在作为用于将信息记录到第一区域的多个磁畴区域中的一个的第一区域上; 连接到第一单元的第二单元，用于感应磁场，以便将信息记录到第一区域。

公开(公告)号：US20100157663A1

公开(公告)日：2010-06-24

申请号：US12457908

申请日：2009-06-25

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

IPC: G11C11/00 ,  G11C7/00

CPC classification number: G11C11/1657 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.

Abstract translation: 信息存储装置包括具有磁道和写入/读取单元的存储区域以及连接到存储器区域的控制电路。 第一和第二开关装置连接到磁道的两端，并且第三开关装置连接到写/读单元。 控制电路控制第一至第三开关装置，并向至少一个磁道和写/读单元提供工作电流。

公开(公告)号：US20100135059A1

公开(公告)日：2010-06-03

申请号：US12591774

申请日：2009-12-01

Applicant: Ung-hwan Pi ,  Young-soo Park ,  Sun-ae Seo ,  Young-jin Cho ,  Sung-chul Lee ,  Ji-young Bae

Inventor： Ung-hwan Pi ,  Young-soo Park ,  Sun-ae Seo ,  Young-jin Cho ,  Sung-chul Lee ,  Ji-young Bae

IPC: G11C19/02 ,  G11C11/02

CPC classification number: G11C19/0841 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: Provided are information storage devices using movement of magnetic domain walls and methods of operating information storage devices. An information storage device includes a magnetic track and an operating unit. The magnetic track includes a plurality of magnetic domains separated by magnetic domain walls. The size of the operating unit is sufficient to cover at least two adjacent magnetic domains. And, the operating unit may be configured to write/read information to/from a single magnetic domain as well as a plurality of magnetic domains of the magnetic track.

Abstract translation: 提供了使用磁畴壁移动的信息存储装置和操作信息存储装置的方法。 信息存储装置包括磁道和操作单元。 磁道包括由磁畴壁分开的多个磁畴。 操作单元的尺寸足以覆盖至少两个相邻的磁畴。 并且，操作单元可以被配置为向/从单个磁畴以及磁道的多个磁畴写入/读取信息。