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    MOVEMENT/POSITION MONITORING AND LINKING TO MEDIA CONSUMPTION
    21.
    发明申请
    MOVEMENT/POSITION MONITORING AND LINKING TO MEDIA CONSUMPTION 审中-公开
    移动/位置监测和链接到媒体消费

    公开(公告)号：US20130138386A1

    公开(公告)日：2013-05-30

    申请号：US13307634

    申请日：2011-11-30

    Applicant: Anand Jain ,  John Stavropoulos ,  Alan Neuhauser ,  Wendell Lynch ,  Vladimir Kuznetsov ,  Jack Crystal

    Inventor： Anand Jain ,  John Stavropoulos ,  Alan Neuhauser ,  Wendell Lynch ,  Vladimir Kuznetsov ,  Jack Crystal

    IPC: G06F15/00 ,  G01P15/00

    CPC classification number: G06Q30/02

    Abstract: Systems and methods are disclosed for identifying users of portable user devices according to one or more accelerometer profiles created for a respective user. During a media session, the portable computing device collects media exposure data, while at the same time, collects data from the accelerometer and compares it to the user profile. The comparison authenticates the user and determines the physical activity the user is engaged in. Additional data may be collected from the portable computing device to determine one or more operational conditions of the device itself. Accelerometer data may also be used to determine probabilities that one or more users were actually exposed to a media event.

    Abstract translation: 公开了根据为相应用户创建的一个或多个加速度计轮廓来识别便携式用户设备的用户的系统和方法。 在媒体会话期间，便携式计算设备收集媒体曝光数据，同时从加速度计收集数据并将其与用户简档进行比较。 比较验证用户并确定用户所参与的身体活动。可以从便携式计算设备收集附加数据，以确定设备本身的一个或多个操作条件。 加速度计数据也可用于确定一个或多个用户实际暴露于媒体事件的概率。

    Protective inserts to line holes in parts for semiconductor process equipment
    23.
    发明授权
    Protective inserts to line holes in parts for semiconductor process equipment 有权
    用于半导体工艺设备的部件中的线孔的保护插件

    公开(公告)号：US08034410B2

    公开(公告)日：2011-10-11

    申请号：US11779033

    申请日：2007-07-17

    Applicant: Vladimir Kuznetsov ,  Ernst H. A. Granneman

    Inventor： Vladimir Kuznetsov ,  Ernst H. A. Granneman

    IPC: C23C16/00

    CPC classification number: C23C16/4404

    Abstract: Inserts are used to line openings in parts that form a semiconductor processing reactor. In some embodiments, the reactor parts delimit a reaction chamber. The reactor parts may be formed of graphite. A layer of silicon carbide is deposited on surfaces of the openings in the reactor parts and the inserts are placed in the openings. The inserts are provided with a hole, which can accept another reactor part such as a thermocouple. The insert protects the walls of the opening from abrasion caused by insertion of the other reactor part into the opening.

    Abstract translation: 插入件用于在形成半导体处理反应器的部分中对开口进行排列。 在一些实施方案中，反应器部分限定反应室。 反应器部件可以由石墨形成。 在反应器部件的开口的表面上沉积一层碳化硅，并且将插入件放置在开口中。 插入件设置有孔，其可接受另一个反应器部件，例如热电偶。 插入物保护开口的壁免受另一反应器部件插入开口所引起的磨损。

    Methods of forming films in semiconductor devices with solid state reactants
    25.
    发明授权
    Methods of forming films in semiconductor devices with solid state reactants 有权
    在具有固态反应物的半导体器件中形成膜的方法

    公开(公告)号：US07691750B2

    公开(公告)日：2010-04-06

    申请号：US11595441

    申请日：2006-11-09

    Applicant: Ernest H. A. Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius A. van der Jeugd

    Inventor： Ernest H. A. Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius A. van der Jeugd

    IPC: H01L21/44

    CPC classification number: H01L21/28518 ,  H01L29/665

    Abstract: A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

    Abstract translation: 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。

    Method relating to the accurate positioning of a semiconductor wafer
    26.
    发明授权
    Method relating to the accurate positioning of a semiconductor wafer 有权
    关于半导体晶片的精确定位的方法

    公开(公告)号：US07651873B1

    公开(公告)日：2010-01-26

    申请号：US12168414

    申请日：2008-07-07

    Applicant: Vladimir Kuznetsov

    Inventor： Vladimir Kuznetsov

    IPC: H01L21/66 ,  G01R31/26

    CPC classification number: H01L21/67265 ,  H01L21/6838

    Abstract: Disclosed is a method involving repeatedly measuring a pressure within a flow of processing gas that is provided in a semiconductor processing apparatus for treatment of a semiconductor substrate, such as a semiconductor wafer. The flow of processing gas is made to extend between a surface of the substrate and a surface of a processing body. From the pressure measurements the occurrence of an event that is related to a variation in the position of the substrate's surface relative to the surface of the processing body is determined.

    Abstract translation: 公开了一种重复测量在用于处理半导体晶片等半导体衬底的半导体处理装置中的处理气体流中的压力的​​方法。 使处理气体的流动在基板的表面和加工体的表面之间延伸。 从压力测量中确定与衬底表面相对于处理体的表面的位置的变化相关的事件的发生。

    METHOD RELATING TO THE ACCURATE POSITIONING OF A SEMICONDUCTOR WAFER
    27.
    发明申请
    METHOD RELATING TO THE ACCURATE POSITIONING OF A SEMICONDUCTOR WAFER 有权
    关于半导体波形精确定位的方法

    公开(公告)号：US20100003769A1

    公开(公告)日：2010-01-07

    申请号：US12168414

    申请日：2008-07-07

    Applicant: Vladimir KUZNETSOV

    Inventor： Vladimir KUZNETSOV

    IPC: H01L21/66

    CPC classification number: H01L21/67265 ,  H01L21/6838

    Abstract: Disclosed is a method involving repeatedly measuring a pressure within a flow of processing gas that is provided in a semiconductor processing apparatus for treatment of a semiconductor substrate, such as a semiconductor wafer. The flow of processing gas is made to extend between a surface of the substrate and a surface of a processing body. From the pressure measurements the occurrence of an event that is related to a variation in the position of the substrate's surface relative to the surface of the processing body is determined.

    Abstract translation: 公开了一种重复测量在用于处理半导体晶片等半导体衬底的半导体处理装置中的处理气体流中的压力的​​方法。 使处理气体的流动在基板的表面和加工体的表面之间延伸。 从压力测量中确定与衬底表面相对于处理体的表面的位置的变化相关的事件的发生。

    METHOD AND DEVICE FOR DETERMINING THE TEMPERATURE OF A SUBSTRATE
    29.
    发明申请
    METHOD AND DEVICE FOR DETERMINING THE TEMPERATURE OF A SUBSTRATE 有权
    用于确定基板温度的方法和装置

    公开(公告)号：US20090310648A1

    公开(公告)日：2009-12-17

    申请号：US12138848

    申请日：2008-06-13

    Applicant: Ernst H.A. GRANNEMAN ,  Pascal VERMONT ,  Vladimir KUZNETSOV

    Inventor： Ernst H.A. GRANNEMAN ,  Pascal VERMONT ,  Vladimir KUZNETSOV

    IPC: G01K5/32 ,  C23C16/00 ,  C23C16/52

    CPC classification number: G01K5/32 ,  G01K5/28

    Abstract: The publication discloses a method for determining a temperature of a substrate, comprising: providing a gas channel that is confined by at least one wall having a certain wall temperature; providing a substrate in said gas channel, proximate to the at least one wall, such that a gap exists between a surface of the substrate and the at least one wall; providing a gas flow with a certain mass flow rate through said gas channel, which gas flow extends at least partially through said gap; determining a pressure drop in the gas flow along the gas channel; and deriving from said pressure drop the temperature of said substrate using a pre-determined relation between the pressure drop along the gas channel, the wall temperature and the temperature of the substrate, at said mass flow rate. Also disclosed is a device for implementing the disclosed method.

    Abstract translation: 该出版物公开了一种用于确定衬底的温度的方法，包括：提供由具有一定壁温度的至少一个壁限制的气体通道; 在所述气体通道中靠近所述至少一个壁提供衬底，使得在所述衬底的表面和所述至少一个壁之间存在间隙; 提供具有通过所述气体通道的一定质量流速的气流，所述气流至少部分地延伸通过所述间隙; 确定沿气体通道的气流中的压降; 并且以所述质量流率，使用沿着气体通道的压降，基板的壁温度和温度之间的预定关系，从所述压力导出所述基板的温度。 还公开了一种用于实现所公开的方法的装置。

    Method and device for rotating a wafer
    30.
    发明申请
    Method and device for rotating a wafer 有权
    用于旋转晶片的方法和装置

    公开(公告)号：US20050051101A1

    公开(公告)日：2005-03-10

    申请号：US10969256

    申请日：2004-10-19

    Applicant: Vladimir Kuznetsov ,  Sijbrand Radelaar ,  Jacobus Cornelis Van Der Sanden ,  Theo Anjes Ruijl

    Inventor： Vladimir Kuznetsov ,  Sijbrand Radelaar ,  Jacobus Cornelis Van Der Sanden ,  Theo Anjes Ruijl

    IPC: B65G49/07 ,  H01L21/027 ,  H01L21/677 ,  H01L21/68 ,  C23C16/00

    CPC classification number: H01L21/67784

    Abstract: Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.

    Abstract translation: 用于旋转布置在反应器中的晶片的方法和装置。 将晶片在这种性质的反应器中处理，并且对于该处理应尽可能均匀地进行是重要的。 为此目的，提出通过使气流垂直于晶片的表面出现，然后赋予该气体相对于晶片切向的部件，从而产生旋转来旋转晶片。 这种切向部件可以通过提供可以是螺旋形或圆形设计的凹槽产生。

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