公开(公告)号：US07635614B1

公开(公告)日：2009-12-22

申请号：US11724622

申请日：2007-03-15

申请人： Vladimir Kuznetsov ,  Vladislav Vashchenko ,  Peter J. Hopper

发明人： Vladimir Kuznetsov ,  Vladislav Vashchenko ,  Peter J. Hopper

IPC分类号： H01L21/323 ,  H01L29/74

CPC分类号： H01L29/7436 ,  H01L29/7404 ,  H01L29/749

摘要： An NLDMOS SCR device based on an LDMOS fabrication process includes a dual gate to provide controllable switching characteristics to allow it to be used for ESD protection of fast switching voltage regulators.

摘要翻译： 基于LDMOS制造工艺的NLDMOS SCR器件包括提供可控开关特性以允许其用于快速开关电压调节器的ESD保护的双栅极。

公开(公告)号：US07800127B1

公开(公告)日：2010-09-21

申请号：US11503593

申请日：2006-08-14

申请人： Vladislav Vashchenko ,  Alexander Burinskiy ,  Peter J. Hopper ,  Vladimir Kuznetsov

发明人： Vladislav Vashchenko ,  Alexander Burinskiy ,  Peter J. Hopper ,  Vladimir Kuznetsov

IPC分类号： H01L23/62

CPC分类号： H01L29/7436 ,  H01L27/0262 ,  H01L29/87

摘要： In an ESD device for fast switching applications based on a BSCR or NLDMOS-SCR, an anode junction control electrode is provided by not connecting the anode electrode to the collector of the BSCR or to the drain of the NLDMOS-SCR, and a cathode junction control electrode is provided by forming an additional n+ region in the BSCR or an additional p+ region in the p-well of the NLDMOS-SCR. The triggering voltage of the ESD device is adjusted after a time delay by controlling one or both of the control electrodes using an RC-timer-driver circuit.

摘要翻译： 在用于基于BSCR或NLDMOS-SCR的快速切换应用的ESD装置中，阳极结控制电极通过不将阳极电极连接到BSCR的集电极或NLDMOS-SCR的漏极而提供，并且阴极结 通过在BSCR中的附加n +区域或NLDMOS-SCR的p阱中的附加p +区域形成控制电极。 通过使用RC定时器驱动器电路控制一个或两个控制电极，在延迟之后调整ESD装置的触发电压。

公开(公告)号：US07795102B1

公开(公告)日：2010-09-14

申请号：US11654735

申请日：2007-01-17

申请人： Vladislav Vashchenko ,  Vladimir Kuznetsov ,  Peter J. Hopper

发明人： Vladislav Vashchenko ,  Vladimir Kuznetsov ,  Peter J. Hopper

IPC分类号： H01L21/331

CPC分类号： H01L29/8611 ,  H01L27/0255 ,  H01L29/161 ,  H01L29/66128

摘要： In a SiGe BJT process, a diode is formed by defining a p-n junction between the BJT collector and BJT internal base, blocking the external gate regions of the BJT and doping the emitter poly of the BJT with the same dopant type as the internal base thereby using the emitter contact to define the contact to the internal base. Electrical contact to the collector is established through a sub-collector or by means of a second emitter poly and internal base both doped with the same dopant type as the collector.

摘要翻译： 在SiGe BJT工艺中，通过限定BJT集电极和BJT内部基极之间的pn结，形成二极管，阻挡BJT的外部栅极区域，并以与内部基底相同的掺杂剂类型掺杂BJT的发射极多晶， 使用发射极接触来定义与内部基座的接触。 通过子集电极或通过掺杂与收集器相同的掺杂剂类型的第二发射极多晶硅和内部基极建立与集电极的电接触。

公开(公告)号：US08497167B1

公开(公告)日：2013-07-30

申请号：US11654736

申请日：2007-01-17

申请人： Vladislav Vashchenko ,  Vladimir Kuznetsov ,  Peter J. Hopper

发明人： Vladislav Vashchenko ,  Vladimir Kuznetsov ,  Peter J. Hopper

IPC分类号： H01L31/107 ,  H01L23/60

CPC分类号： H01L27/0255 ,  H01L29/063 ,  H01L29/861

摘要： A high voltage ESD protection diode wherein the p-n junction is defined by a p-well and an n-well and includes a RESURF region, the diode including a field oxide layer formed on top of the p-well and n-well, wherein the parameters of the diode are adjustable by controlling one or more of the junction width, the length of the RESURF region, or the length of the field oxide layer.

摘要翻译： 一种高压ESD保护二极管，其中pn结由p阱和n阱限定并且包括RESURF区，所述二极管包括形成在p阱和n阱顶部的场氧化物层，其中， 通过控制一个或多个结宽度，RESURF区域的长度或场氧化物层的长度可以调节二极管的参数。

公开(公告)号：US07973386B1

公开(公告)日：2011-07-05

申请号：US11652982

申请日：2007-01-12

申请人： Vladislav Vashchenko ,  Vladimir Kuznetsov ,  Peter J. Hopper

发明人： Vladislav Vashchenko ,  Vladimir Kuznetsov ,  Peter J. Hopper

IPC分类号： H01L29/66

CPC分类号： H01L29/866 ,  H01L27/0259 ,  H01L29/7375

摘要： In a bipolar device an intrinsic Zener like diode is formed for controlling the triggering voltage and leakage current, the Zener-like diode being formed between the n-collector and the p-base, wherein the collector implant and base diffusion overlap at least partially.

摘要翻译： 在双极器件中，形成内部齐纳二极管，用于控制触发电压和漏电流，齐纳二极管形成在n极集电极和p基极之间，其中集电极注入和基极扩散至少部分重叠。

公开(公告)号：US20130199448A1

公开(公告)日：2013-08-08

申请号：US13808392

申请日：2011-07-06

申请人： Ernst Hendrik August Granneman ,  Vladimir Kuznetsov

发明人： Ernst Hendrik August Granneman ,  Vladimir Kuznetsov

IPC分类号： C23C16/455 ,  C23C16/54 ,  B65G51/02

CPC分类号： C23C16/455 ,  B65G51/02 ,  B65G51/03 ,  C23C16/4412 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/54 ,  H01L21/67784

摘要： A method of contactlessly advancing a substrate (140), comprising: —providing a process tunnel (102), extending in a longitudinal direction and bounded by at least a first (120) and a second (134) wall; —providing first and second gas bearings (124, 134) by providing substantially laterally flowing gas alongside the first and second walls respectively; —bringing about a first longitudinal division of the process tunnel into a plurality of pressure segments (116), wherein the gas bearings (124, 34) in a pressure segment have an average gas pressure that is different from an average gas pressure of the gas bearings in an adjacent pressure segment; —providing a substrate (140) in between the first wall (120) and the second wall (130); and 1—allowing differences in average gas pressure between adjacent pressure segments (116) to drive the substrate along the longitudinal direction of the process tunnel.

摘要翻译： 一种非接触地推进衬底（140）的方法，包括：提供在纵向方向上延伸并由至少第一（120）和第二（134）壁限定的工艺通道（102）; 通过分别在第一和第二壁旁边提供基本上横向流动的气体来提供第一和第二气体轴承（124,134）; 围绕加工隧道的第一纵向划分成多个压力段（116），其中压力段中的气体轴承（124,34）具有与气体的平均气体压力不同的平均气体压力 相邻压力段的轴承; - 在第一壁（120）和第二壁（130）之间提供衬底（140）; 和1-允许相邻压力段（116）之间的平均气体压力的差异，以沿着处理隧道的纵向方向驱动衬底。

公开(公告)号：US07807222B2

公开(公告)日：2010-10-05

申请号：US11856418

申请日：2007-09-17

申请人： Vladimir Kuznetsov

发明人： Vladimir Kuznetsov

IPC分类号： C23C16/32 ,  C23C16/42

CPC分类号： C30B23/005 ,  C23C16/045 ,  C23C16/4404 ,  C23C16/45565 ,  C30B35/002 ,  H01L21/67103 ,  H01L21/67109 ,  Y10T29/41

摘要： Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.

摘要翻译： 半导体处理反应器部件中的孔的尺寸适于促进保护涂层的沉积，例如通过大气压下的化学气相沉积。 在一些实施例中，孔各自具有流动收缩部，其使一部分中的孔变窄，并且还将孔分成一个或多个其它部分。 在一些实施例中，一个或多个其它部分的长宽比为约15:1或更小，或约7:1或更小，并且具有圆柱形或圆锥形横截面形状。 通过化学气相沉积（包括大气压下的化学气相沉积），用诸如碳化硅涂层的保护涂层涂覆孔。

公开(公告)号：US07427329B2

公开(公告)日：2008-09-23

申请号：US10410699

申请日：2003-04-08

申请人： Vladimir Kuznetsov ,  Ernst H. A. Granneman

发明人： Vladimir Kuznetsov ,  Ernst H. A. Granneman

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： C23C16/4583 ,  C23C16/46 ,  C23C16/52 ,  C30B33/02 ,  H01L21/67248

摘要： A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber during processing. Streams of gas may lift the substrate from the support structure so that the substrate floats. A plurality of heating elements is associated with at least one of the upper part and the bottom part and are arranged to define heating zones. A controller controls the heating elements individually so that each heating zone is configured to have a predetermined temperature determined by the controller. The heating zones provide for a non-uniform heating laterally across the substrate.

摘要翻译： 一种用于热处理在衬底封闭结构内具有处理室的衬底的反应器，以及支撑结构，其被配置为在处理期间将衬底定位在处理室内的上部和底部之间的预定间隔处。 气流可以从支撑结构提起衬底，使得衬底漂浮。 多个加热元件与上部和底部中的至少一个相关联并且被布置成限定加热区。 控制器分别控制加热元件，使得每个加热区被配置成具有由控制器确定的预定温度。 加热区域横跨衬底提供不均匀的加热。

公开(公告)号：US20060141808A1

公开(公告)日：2006-06-29

申请号：US11356697

申请日：2006-02-17

申请人： Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Pascal Vermont ,  Herbert Terhorst ,  Gert-Jan Snijders

发明人： Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Pascal Vermont ,  Herbert Terhorst ,  Gert-Jan Snijders

IPC分类号： H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC分类号： H01L21/324 ,  H01L21/42 ,  H01L21/477 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67784 ,  H01L21/6838

摘要： A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

摘要翻译： 衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。 通过在反应器的两个加热表面之间流动气体将基板保持悬浮。 将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到​​所需的温度。 然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。

公开(公告)号：US20050017310A1

公开(公告)日：2005-01-27

申请号：US10866643

申请日：2004-06-10

申请人： Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius van der Jeugd

发明人： Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius van der Jeugd

IPC分类号： H01L21/28 ,  H01L21/24 ,  H01L21/285 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L29/76

CPC分类号： H01L21/28518 ,  H01L29/665

摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

摘要翻译： 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。