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    Methods of forming films in semiconductor devices with solid state reactants
    1.
    发明授权
    Methods of forming films in semiconductor devices with solid state reactants 有权
    在具有固态反应物的半导体器件中形成膜的方法

    公开(公告)号：US07691750B2

    公开(公告)日：2010-04-06

    申请号：US11595441

    申请日：2006-11-09

    申请人： Ernest H. A. Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius A. van der Jeugd

    发明人： Ernest H. A. Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius A. van der Jeugd

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665

    摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

    摘要翻译： 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。

    Methods of forming silicide films in semiconductor devices
    2.
    发明授权
    Methods of forming silicide films in semiconductor devices 有权
    在半导体器件中形成硅化物膜的方法

    公开(公告)号：US07153772B2

    公开(公告)日：2006-12-26

    申请号：US10866643

    申请日：2004-06-10

    申请人： Ernst H. A. Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius A. van der Jeugd

    发明人： Ernst H. A. Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius A. van der Jeugd

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665

    摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

    摘要翻译： 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。

    Wafer support system
    4.
    发明授权
    Wafer support system 失效
    晶圆支撑系统

    公开(公告)号：US06692576B2

    公开(公告)日：2004-02-17

    申请号：US10243579

    申请日：2002-09-13

    申请人： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs

    发明人： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs

    IPC分类号： C23L1600

    CPC分类号： C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

    摘要翻译： 一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

    Process chamber with inner support
    5.
    发明授权
    Process chamber with inner support 失效
    具有内部支撑的过程室

    公开(公告)号：US06093252A

    公开(公告)日：2000-07-25

    申请号：US637616

    申请日：1996-04-25

    申请人： John F. Wengert ,  Loren R. Jacobs ,  Michael W. Halpin ,  Derrick W. Foster ,  Cornelius A. van der Jeugd ,  Robert M. Vyne ,  Mark R. Hawkins

    发明人： John F. Wengert ,  Loren R. Jacobs ,  Michael W. Halpin ,  Derrick W. Foster ,  Cornelius A. van der Jeugd ,  Robert M. Vyne ,  Mark R. Hawkins

    IPC分类号： B01J3/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  H01L21/00 ,  H01L21/205 ,  H01L21/687 ,  C23C16/00

    CPC分类号： B01J3/006 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/481 ,  H01L21/67115 ,  H01L21/68735 ,  H01L21/68785

    摘要： An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.

    摘要翻译： 改进的化学气相沉积反应室具有内部支撑板以实现减压处理。 该腔室具有垂直横向的透镜状横截面，在双凸上壁和下壁之间具有宽的水平尺寸和较短的垂直尺寸。 中央水平支撑板设置在腔室的两个侧向侧轨之间。 在支撑板中形成大的圆形矩形孔，用于定位其上放置晶片的可旋转基座。 基座的轴向下延伸穿过孔，并通过从腔室垂下的下管。 支撑板将反应室分离成上部区域和下部区域，其中吹扫气体通过下部管道被引入下部区域，以防止其中不希望的沉积。 温度补偿环设置在基座周围并由连接到支撑板的手指支撑。 温度补偿环可以是圆形的，或者可以被构造成符合支撑板孔的圆形矩形形状。 环可以比上游更远离基座延伸下游。 可以在环形温度补偿环和圆形矩形孔之间设置单独的牺牲石英板。 石英板可以具有与孔紧密邻接的水平部分和垂直唇缘，以防止支撑板的失透。 气体喷射器邻接室的入口凸缘并将工艺气体注入上部区域并将气体吹入下部区域。 气体喷射器包括跨过室横向设置的多个独立控制的通道，通道在喷射器的出口处汇合，以允许在到达晶片之前将分离的流的相邻纵向边缘混合。

    Low-mass susceptor
    6.
    发明授权
    Low-mass susceptor 失效
    低质量感受器

    公开(公告)号：US6086680A

    公开(公告)日：2000-07-11

    申请号：US621627

    申请日：1996-03-26

    申请人： Derrick W. Foster ,  Cornelius A. van der Jeugd ,  John F. Wengert

    发明人： Derrick W. Foster ,  Cornelius A. van der Jeugd ,  John F. Wengert

    IPC分类号： H01L21/205 ,  C23C16/458 ,  H01L21/26 ,  H01L21/687 ,  C23C16/00

    CPC分类号： H01L21/6875 ,  C23C16/4581 ,  H01L21/68757 ,  H01L21/68785

    摘要： A wafer susceptor for semiconductor processing devices, having a thermal mass which is close to that of the wafer. The similarity between the thermal masses of the susceptor and wafer enables a higher throughput and reduces temperature uniformities across the wafer. The low-mass susceptor may be made of a solid, thin disk with or without a central wafer support recess. A wafer temperature sensing aperture may be provided in the center of the susceptor. Alternatively, a low-mass susceptor is formed with an open-celled silicon carbide foam, with or without a thin skin of solid silicon carbide on the top forming a wafer support surface, or completely encapsulating the open-celled foam. The wafer is preferably supported on a plurality of pins extending upward from the susceptor. In a third embodiment, an ultra low-mass susceptor is formed as a ring with a central throughbore and a surrounding wafer support shelf below an outer ledge.

    摘要翻译： 一种用于半导体处理器件的晶片基座，具有接近晶片的热质量。 感受器和晶片的热质量之间的相似性使得能够实现更高的生产量并降低整个晶片的温度均匀性。 低质量基座可以由具有或不具有中央晶片支撑凹部的实心薄盘制成。 可以在基座的中心设置晶片温度感测孔。 或者，低质量基座形成有开孔碳化硅泡沫，顶部形成有或没有固体碳化硅的薄皮，形成晶片支撑表面，或完全封装开孔泡沫。 晶片优选地支撑在从基座向上延伸的多个销上。 在第三实施例中，超低质量基座形成为具有中央通孔和在外凸缘下方的周围晶片支撑架的环。

    Wafer support system
    7.
    发明授权
    Wafer support system 有权
    晶圆支撑系统

    公开(公告)号：US07186298B2

    公开(公告)日：2007-03-06

    申请号：US10642799

    申请日：2003-08-18

    申请人： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs

    发明人： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

    摘要翻译： 一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。