公开(公告)号：US20090086353A1

公开(公告)日：2009-04-02

申请号：US12040162

申请日：2008-02-29

申请人： Lun Tsai ,  Chi-Sheng Chen ,  Po-Hua Lung ,  Wen-Bin Wu

发明人： Lun Tsai ,  Chi-Sheng Chen ,  Po-Hua Lung ,  Wen-Bin Wu

IPC分类号： G02B5/20 ,  G02B5/00 ,  G02B1/00

CPC分类号： G02B5/223 ,  G02B5/201 ,  G02F1/133516 ,  G02F2001/136236

摘要： A bank structure for a display panel is provided. The display panel comprises a substrate, and the bank structure is formed on the surface of the substrate. The bank structure comprises a periphery and a partition, wherein the periphery forms a receiving space with the substrate and the partition is disposed in the receiving space for separating the receiving space into two sub-spaces with fluid-communication. Therefore, the ink can be injected and uniformly distributed in the sub-spaces to overcome the disadvantages of poor injection precision and increasing the spray control of the ink.

摘要翻译： 提供了一种用于显示面板的银行结构。 显示面板包括衬底，并且衬底结构形成在衬底的表面上。 所述堤结构包括周边和隔板，其中所述周边与所述基板形成接收空间，并且所述隔板设置在所述接收空间中，用于将所述接收空间分离成具有流体连通的两个子空间。 因此，油墨可以注入并均匀分布在子空间中，以克服喷射精度差和油墨喷雾控制增加的缺点。

公开(公告)号：US20080220343A1

公开(公告)日：2008-09-11

申请号：US12031058

申请日：2008-02-14

申请人： Chi-Sheng Chen ,  Lun Tsai ,  Wen-Bin Wu ,  Shen-Jye Shieh ,  Shu-Chin Lee ,  Feng-Yuan Gan

发明人： Chi-Sheng Chen ,  Lun Tsai ,  Wen-Bin Wu ,  Shen-Jye Shieh ,  Shu-Chin Lee ,  Feng-Yuan Gan

IPC分类号： G03F1/00 ,  C08K5/05 ,  C08K5/053 ,  C08K5/13

CPC分类号： G03F7/0007 ,  C08K5/06 ,  C08K5/103

摘要： An ink composition for producing a color filter is provided. The ink composition comprises a colorant, a binder and plural solvents. A color filter production method using the above-mentioned ink composition is also provided. The ink composition is adhered to the designated light transmitting regions on the surface of a transparent substrate. Then, the ink composition adhered to the designated light transmitting regions is solidified.

摘要翻译： 提供了一种用于制造滤色器的油墨组合物。 油墨组合物包含着色剂，粘合剂和多种溶剂。 还提供了使用上述油墨组合物的滤色器制备方法。 油墨组合物粘附在透明基板的表面上的指定透光区域上。 然后，粘附到指定的透光区域上的油墨组合物被固化。

公开(公告)号：US07052810B2

公开(公告)日：2006-05-30

申请号：US10871755

申请日：2004-06-18

申请人： Tsan Lu ,  Wen-Bin Wu ,  Yung-Long Hung ,  Cheng-Kung Lu

发明人： Tsan Lu ,  Wen-Bin Wu ,  Yung-Long Hung ,  Cheng-Kung Lu

IPC分类号： G01F9/00

CPC分类号： G03F1/36 ,  G03F1/44 ,  G03F1/68

摘要： A method of correcting optical proximity effect of contact holes. Corresponding relations between mask critical dimensions (mCDs) and photoresist critical dimensions (pCDs) for each pitch (d) are formed. Correction of each mCD for each combination of pCDs and pitches is determined based on the corresponding relations. The correction is used first to correct each contact hole of a processing mask pattern. The first corrected contact hole of the processing mask pattern is corrected again to a square having the same area as the first corrected contact hole and the same center as the uncorrected contact hole.

摘要翻译： 修正接触孔的光学邻近效应的方法。 形成每个间距（d）的掩模临界尺寸（mCD）和光刻胶临界尺寸（pCD）之间的对应关系。 基于相应的关系确定每个组合的pCD和间距的每个mCD的校正。 首先使用校正来校正处理掩模图案的每个接触孔。 将处理掩模图案的第一校正接触孔再次校正为具有与第一校正接触孔相同的面积和与未校正的接触孔相同的中心的正方形。

公开(公告)号：US20050048654A1

公开(公告)日：2005-03-03

申请号：US10792345

申请日：2004-03-03

申请人： Wen-Bin Wu ,  Chih-Yuan Hsiao ,  Hui-Min Mao

发明人： Wen-Bin Wu ,  Chih-Yuan Hsiao ,  Hui-Min Mao

IPC分类号： G03F7/20 ,  G03F9/00 ,  G01N31/00

CPC分类号： G03F9/7019 ,  G03F7/70633 ,  G03F9/7011

摘要： A method for evaluating reticle registration between two reticle patterns. A wafer is defined and etched to form a first exposure pattern, by photolithography with a first reticle having a first reticle pattern thereon. A photoresist layer is formed over the wafer and defined as a second exposure pattern, by photolithography with a second reticle having a second reticle pattern thereon. A deviation value between the first and second exposure patterns is measured by a CD-SEM. The deviation value is calibrated according to the scaling degree and the overlay offset to obtain a registration data. The reticle registration between the two reticle patterns is evaluated based on the registration data.

公开(公告)号：US20050003284A1

公开(公告)日：2005-01-06

申请号：US10871755

申请日：2004-06-18

申请人： Tsan Lu ,  Wen-Bin Wu ,  Yung-Long Hung ,  Cheng-Kung Lu

发明人： Tsan Lu ,  Wen-Bin Wu ,  Yung-Long Hung ,  Cheng-Kung Lu

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/00 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F1/36 ,  G03F1/44 ,  G03F1/68

摘要： A method of correcting optical proximity effect of contact holes. Corresponding relations between mask critical dimensions (mCDs) and photoresist critical dimensions (pCDs) for each pitch (d) are formed. Correction of each mCD for each combination of pCDs and pitches is determined based on the corresponding relations. The correction is used first to correct each contact hole of a processing mask pattern. The first corrected contact hole of the processing mask pattern is corrected again to a square having the same area as the first corrected contact hole and the same center as the uncorrected contact hole.

摘要翻译： 修正接触孔的光学邻近效应的方法。 形成每个间距（d）的掩模临界尺寸（mCD）和光刻胶临界尺寸（pCD）之间的对应关系。 基于相应的关系确定每个组合的pCD和间距的每个mCD的校正。 首先使用校正来校正处理掩模图案的每个接触孔。 将处理掩模图案的第一校正接触孔再次校正为具有与第一校正接触孔相同的面积和与未校正的接触孔相同的中心的正方形。

公开(公告)号：US08658051B2

公开(公告)日：2014-02-25

申请号：US12119275

申请日：2008-05-12

申请人： Kuo-Yao Cho ,  Wen-Bin Wu ,  Ya-Chih Wang ,  Chiang-Lin Shih ,  Chao-Wen Lay ,  Chih-Huang Wu

发明人： Kuo-Yao Cho ,  Wen-Bin Wu ,  Ya-Chih Wang ,  Chiang-Lin Shih ,  Chao-Wen Lay ,  Chih-Huang Wu

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/306

CPC分类号： H01L21/32139 ,  H01L21/0337 ,  H01L21/0338

摘要： A method of improving lithography resolution on a semiconductor, including the steps of providing a substrate on which a protecting layer, a first etching layer and a photoresist layer are sequentially formed; patterning the photoresist layer to form an opening so as to partially reveal the first etching layer; implanting a first ion into the revealed first etching layer to form a first doped area; and implanting a second ion into the revealed first etching layer to form a second doped area, wherein the first doped area is independent from the second doped area is provided.

摘要翻译： 一种改善半导体上的光刻分辨率的方法，包括提供其上依次形成保护层，第一蚀刻层和光致抗蚀剂层的基板的步骤; 图案化光致抗蚀剂层以形成开口，以便部分地露出第一蚀刻层; 将第一离子注入到所揭示的第一蚀刻层中以形成第一掺杂区域; 以及将第二离子注入到所揭示的第一蚀刻层中以形成第二掺杂区域，其中所述第一掺杂区域与所述第二掺杂区域无关。

公开(公告)号：US20080034344A1

公开(公告)日：2008-02-07

申请号：US11513196

申请日：2006-08-31

申请人： Chui-fu Chiu ,  Wen-Bin Wu

发明人： Chui-fu Chiu ,  Wen-Bin Wu

IPC分类号： G06F17/50

CPC分类号： G03F9/7076 ,  G03F1/42 ,  G03F7/70633 ,  G03F7/70683

摘要： An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuration on the substrate was damaged during process.

摘要翻译： 形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的 所述第一矩形区域和所述第三矩形区域具有相同的第一图案构造，所述第一图案构造具有第一图案元素，所述第二矩形区域的长边和所述第四矩形区域的长边平行 并且第二和第四矩形区域具有相同的具有第二图案元素的第二图案构造，第一矩形区域的长边与第二矩形区域的长边垂直; 其中，所述第一图案元件与所述第二图案元件不同，用于当所述基板上的所述第一图案配置在处理期间被损坏时，所述第二图案构造被选择为对齐。

公开(公告)号：US07090965B2

公开(公告)日：2006-08-15

申请号：US10611196

申请日：2003-07-01

申请人： Wen-Bin Wu ,  Yuan-Shan Wu ,  Yi-Nan Chen ,  Teng-Yen Huang

发明人： Wen-Bin Wu ,  Yuan-Shan Wu ,  Yi-Nan Chen ,  Teng-Yen Huang

IPC分类号： G03F7/00

CPC分类号： H01L21/0276 ,  G03F7/085 ,  G03F7/11

摘要： A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.

摘要翻译： 一种用于增强再加工的光致抗蚀剂和潜在的氮氧化合物膜之间的粘合性的方法。 在衬底上的氧氮化物层上形成光致抗蚀剂图案层。 通过酸性溶液或含氧等离子体去除光致抗蚀剂图案层。 使用显影液在氧氮化物层上进行表面处理，以通过除去上覆的光致抗蚀剂图案层来修复损坏的氮氧化物层。 在氧氮化物层上形成再加工的光致抗蚀剂图案层。

公开(公告)号：US20050168740A1

公开(公告)日：2005-08-04

申请号：US11090643

申请日：2005-03-25

申请人： Wen-Bin Wu ,  Chih-Yuan Hsiao ,  Hui-Min Mao

发明人： Wen-Bin Wu ,  Chih-Yuan Hsiao ,  Hui-Min Mao

IPC分类号： G03F7/20 ,  G03F9/00 ,  G01B11/00 ,  G06F17/50

CPC分类号： G03F9/7019 ,  G03F7/70633 ,  G03F9/7011

摘要： A method for evaluating reticle registration between two reticle patterns. A wafer is defined and etched to form a first exposure pattern, by photolithography with a first reticle having a first reticle pattern thereon. A photoresist layer is formed over the wafer and defined as a second exposure pattern, by photolithography with a second reticle having a second reticle pattern thereon. A deviation value between the first and second exposure patterns is measured by a CD-SEM. The deviation value is calibrated according to the scaling degree and the overlay offset to obtain a registration data. The reticle registration between the two reticle patterns is evaluated based on the registration data.

摘要翻译： 一种用于评估两个掩模版图案之间的掩模版配准的方法。 通过用其上具有第一掩模版图案的第一掩模版通过光刻来限定和蚀刻晶片以形成第一曝光图案。 在晶片上形成光致抗蚀剂层，并通过光刻法将其定义为第二曝光图案，其上具有第二掩模版图案的第二掩模版。 通过CD-SEM测量第一和第二曝光图案之间的偏差值。 根据缩放程度和覆盖偏移校正偏差值，以获得注册数据。 基于登记数据评价两个掩模图案之间的掩模版登记。

公开(公告)号：US20050022150A1

公开(公告)日：2005-01-27

申请号：US10707244

申请日：2003-12-01

申请人： Shu-Hui Liu ,  Wen-Bin Wu

发明人： Shu-Hui Liu ,  Wen-Bin Wu

IPC分类号： G03C5/00 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F9/00 ,  G06F17/50

CPC分类号： G03F1/36

摘要： An optical proximity correction (OPC) method for correcting a photomask layout. The photomask layout has at least a photomask pattern. The steps of the OPC method include collecting an assist feature bias of a predetermined assist feature, performing a rule-based OPC by taking account of the assist feature bias to compute a target bias of the photomask layout, outputting a corrected photomask layout according to the target bias, and adding the predetermined assist feature to the corrected photomask layout.

摘要翻译： 一种用于校正光掩模布局的光学邻近校正（OPC）方法。 光掩模布局至少具有光掩模图案。 OPC方法的步骤包括收集预定辅助特征的辅助特征偏差，通过考虑辅助特征偏差来执行基于规则的OPC，以计算光掩模布局的目标偏置，根据该方法输出校正的光掩模布局 目标偏置，并将预定的辅助特征添加到校正的光掩模布局。