公开(公告)号：US20130284889A1

公开(公告)日：2013-10-31

申请号：US13882441

申请日：2011-11-03

Applicant: Benoit Giffard ,  Yvon Cazaux ,  Norbert Moussy

Inventor： Benoit Giffard ,  Yvon Cazaux ,  Norbert Moussy

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14649 ,  H01L27/14694 ,  H01L31/02165 ,  H01L31/18

Abstract: The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.

Abstract translation: 本发明涉及一种辐射检测装置，其包括硅基板和红外光电二极管，该红外光电二极管由优化用于红外检测的材料制成 衬底包括形成在电绝缘材料中的感光区域，读出电路和互连。 互连和金属触点连接读出电路，感光区域和红外光电二极管。 检测装置还包括覆盖感光区而不覆盖红外光电二极管的红外辐射滤波结构。

公开(公告)号：US20130214160A1

公开(公告)日：2013-08-22

申请号：US13882914

申请日：2011-11-03

Applicant: Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

Inventor： Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

IPC: G01J5/20 ,  H01L31/18 ,  H01L27/146

CPC classification number: G01J5/20 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/1469 ,  H01L31/18

Abstract: The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.

Abstract translation: 可见光和近红外辐射检测器包括近红外感光元件，用于读取近红外感光元件的读出电路，四个可见感光元件，其中一个面向近红外光敏元件放置，三个干涉滤光片 定义像素四元组。 包括近红外光敏元件和可见感光元件之一的第一像素没有滤光片。 分别包含三个可见感光元件的三个其他像素分别设置有与三原色相关联的滤光片。 每个干涉滤光器包括金属层和电介质层的交替。

公开(公告)号：US20130048832A1

公开(公告)日：2013-02-28

申请号：US13637223

申请日：2011-03-25

Applicant: Arnaud Peizerat ,  Yvon Cazaux ,  Michäel Tchagaspanian

Inventor： Arnaud Peizerat ,  Yvon Cazaux ,  Michäel Tchagaspanian

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469

Abstract: An imaging device including: plural pixels each including a photodetector; plural reading circuits associated with the plural photodetectors, each reading circuit including a first MOS transistor charging/discharging a photodetector and a second MOS transistor converting charges to be output by the photodetector into voltage; an electronic processing circuit configured to process the voltages outputted by the reading circuits; a first substrate on which are formed the pixels and the reading circuits, and a second substrate, distinct from the first substrate, on which is formed the electronic processing circuit, the second substrate being linked electrically to the first substrate by an electrical interconnection forming an electrical link between the reading circuits and the electronic processing circuit.

Abstract translation: 一种成像装置，包括：多个像素，每个像素包括光电检测器; 与多个光电检测器相关联的多个读取电路，每个读取电路包括对光电检测器进行充电/放电的第一MOS晶体管和将由光电检测器输出的电荷转换为电压的第二MOS晶体管; 电子处理电路，被配置为处理由所述读取电路输出的电压; 其上形成有像素和读取电路的第一衬底和与第一衬底不同的第二衬底，在其上形成电子处理电路，第二衬底通过电互连电连接到第一衬底，形成 读取电路和电子处理电路之间的电连接。

公开(公告)号：US20130009041A1

公开(公告)日：2013-01-10

申请号：US13605685

申请日：2012-09-06

Applicant: Frédéric Barbier ,  Yvon Cazaux

Inventor： Frédéric Barbier ,  Yvon Cazaux

IPC: H01L27/146

CPC classification number: H04N5/3745 ,  H04N5/3597

Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

Abstract translation: 一种用于控制图像传感器的装置，包括至少一个感光单元，该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管，所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路，其能够在将光电二极管放电到感测节点期间增加源极的电压。

公开(公告)号：US07935559B1

公开(公告)日：2011-05-03

申请号：US12913289

申请日：2010-10-27

Applicant: Benoît Giffard ,  Yvon Cazaux ,  Norbert Moussy

Inventor： Benoît Giffard ,  Yvon Cazaux ,  Norbert Moussy

IPC: H01L21/00

CPC classification number: H01L27/14683 ,  H01L27/14618 ,  H01L27/14627 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This method for producing a non-planar microelectronic component, especially a concave component, involves superposing a layer that contains an active flexible circuit above a cavity shaped according to the desired profile of said component, said cavity being formed in substrate; and applying a pressure difference either side of said layer thereby causing slumping of the flexible circuit into the cavity therefore causing the circuit to assume the shape of the cavity. Superposition of the flexible circuit and the cavity is realized by filling the cavity with a material capable of being selectively removed relative to the substrate and the flexible circuit; then fitting or forming the flexible circuit on the cavity thus filled; then forming at least one feedthrough to access the filled cavity; and by selectively etching the material that fills the cavity via at least one feedthrough in order to remove said material.

Abstract translation: 用于制造非平面微电子部件，特别是凹形部件的该方法涉及将包含活性柔性电路的层叠置在根据所述部件的所需轮廓成型的空腔上方，所述空腔形成在基板中; 并且在所述层的任一侧上施加压力差，从而导致柔性电路塌陷到空腔中，从而使电路呈现空腔的形状。 通过用能够相对于基板和柔性电路选择性地去除的材料填充空腔来实现柔性电路和空腔的叠加; 然后在如此填充的空腔上装配或形成柔性电路; 然后形成至少一个馈通以进入所述填充的空腔; 并且通过选择性地蚀刻通过至少一个馈通填充空腔的材料以便去除所述材料。

公开(公告)号：US20080170147A1

公开(公告)日：2008-07-17

申请号：US11959023

申请日：2007-12-18

Applicant: Frederic Barbier ,  Yvon Cazaux

Inventor： Frederic Barbier ,  Yvon Cazaux

IPC: H04N3/14

CPC classification number: H04N5/3745 ,  H04N5/3597

Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

Abstract translation: 一种用于控制图像传感器的装置，包括至少一个感光单元，该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管，所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路，其能够在将光电二极管放电到感测节点期间增加源极的电压。

公开(公告)号：US06984817B2

公开(公告)日：2006-01-10

申请号：US10142259

申请日：2002-05-09

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H01L31/00

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14643 ,  H01L31/0352

Abstract: A photodetector formed in an active area of a semiconductor substrate of a first conductivity type, including a MOS transistor and a photodiode formed of the junction between the substrate and a region of a second conductivity type also forming the source of the MOS transistor, a heavily-doped layer of the first conductivity type covering the source region and a portion of the substrate, said portion of the substrate being delimited by an opening of the source region extending in a centered manner from the side of the source region opposite to the channel region of the transistor, towards this channel region.

Abstract translation: 一种形成在第一导电类型的半导体衬底的有源区域中的光电探测器，包括MOS晶体管和由衬底和第二导电类型的区域之间的结的光电二极管形成的MOS光电二极管， 所述第一导电类型的覆盖所述源极区域和所述衬底的一部分的掺杂层的所述部分由所述源极区域的开口限定，所述源极区域以与所述沟道区域相反的所述源极区域的中心方式延伸 的晶体管。

公开(公告)号：US06831264B2

公开(公告)日：2004-12-14

申请号：US10142262

申请日：2002-05-08

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H01L3100

CPC classification number: B82Y20/00 ,  H01L27/1443 ,  H01L27/14609 ,  H01L27/14632 ,  H01L31/035245 ,  H01L31/03762 ,  H04N5/361 ,  Y02E10/548

Abstract: A photodetector including an amorphous silicon photodiode having its anode connected to a reference voltage, an initialization MOS transistor connected between the cathode of the photodiode and a first supply voltage to set the cathode to the first supply voltage during an initialization phase, and means for measuring the voltage of the photodiode cathode, including saturation means for bringing the photodiode cathode to a saturation voltage close to the reference voltage immediately before the initialization phase.

Abstract translation: 一种光电检测器，包括其阳极连接到参考电压的非晶硅光电二极管，连接在光电二极管的阴极之间的初始化MOS晶体管和在初始化阶段期间将阴极设置为第一电源电压的第一电源电压，以及用于测量 包括光电二极管阴极的电压，包括用于在初始化阶段之前使光电二极管阴极达到接近参考电压的饱和电压的饱和装置。

公开(公告)号：US5073908A

公开(公告)日：1991-12-17

申请号：US492753

申请日：1990-03-13

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: G11C19/28

CPC classification number: G11C19/285

Abstract: Disclosed is a reading register of the type formed, firstly, by a shift register of the charge-coupled device type working according to a mode other than a two-phase mode and, secondly, an output circuit. It is notably an object of the invention improve the dynamic range, in amplitude, of the output signal delivered by the output circuit for supply voltages. The reading register has a substrate, bearing a shift register and an output circuit, separated from each other by an output gate. The shift register includes a sequence of transfer stages, each having at least three electrodes receiving transfer pulses of different phases, this sequence of stages being separated from the output gate by a last transfer stage or output transfer stage having at least three successive electrodes. According to one characteristic of the invention, the last two electrodes of the transfer stage are connected to each other and receive one and the same voltage pulse. The invention can be applied to reading registers for memory devices, photosensitive devices for cameras, etc.

Abstract translation: 公开了一种读取寄存器，其首先由根据除了两相模式之外的模式工作的电荷耦合器件类型的移位寄存器形成，其次，输出电路。 特别地，本发明的目的是改善由输出电路为电源电压输出的输出信号的幅度的动态范围。 读取寄存器具有衬底，具有移位寄存器和输出电路，通过输出门彼此分开。 移位寄存器包括传送级序列，每个传输级具有至少三个电极接收不同相位的传输脉冲，该级序列由具有至少三个连续电极的最后传输级或输出传输级与输出门分离。 根据本发明的一个特征，传输级的最后两个电极彼此连接并接收一个和相同的电压脉冲。 本发明可以应用于存储器件的读取寄存器，用于照相机的光敏器件等。

公开(公告)号：US5055931A

公开(公告)日：1991-10-08

申请号：US599971

申请日：1990-10-19

Applicant: Yvon Cazaux ,  Gilles Boucharlat

Inventor： Yvon Cazaux ,  Gilles Boucharlat

IPC: H01L27/148

CPC classification number: H01L27/14831

Abstract: Disclosed is a charge-transfer or charge-coupled (CCD) type device, aimed at increasing the charge storage capacity. The disclosed photosensitive device includes a plurality of photosensitive cells. Each photosensitive cell includes an elementary photosensitive zone beneath which there is formed a potential well. According to one characteristic, the potential well has a surface area greater than the surface area of the elementary photosensitive zone. The disclosure can be applied to charge-couped devices that include a non-photosensitive zone between the pixels.

Abstract translation: 公开了一种旨在增加电荷存储容量的电荷转移或电荷耦合（CCD）型装置。 所公开的感光装置包括多个感光单元。 每个感光单元包括基本光敏区，在该基底下形成势阱。 根据一个特征，势阱具有大于基本光敏区的表面积的表面积。 本公开可以应用于在像素之间包括非感光区域的充电耦合器件。