摘要:
An imaging device including: plural pixels each including a photodetector; plural reading circuits associated with the plural photodetectors, each reading circuit including a first MOS transistor charging/discharging a photodetector and a second MOS transistor converting charges to be output by the photodetector into voltage; an electronic processing circuit configured to process the voltages outputted by the reading circuits; a first substrate on which are formed the pixels and the reading circuits, and a second substrate, distinct from the first substrate, on which is formed the electronic processing circuit, the second substrate being linked electrically to the first substrate by an electrical interconnection forming an electrical link between the reading circuits and the electronic processing circuit.
摘要:
An imaging device including: plural pixels each including a photodetector; plural reading circuits associated with the plural photodetectors, each reading circuit including a first MOS transistor charging/discharging a photodetector and a second MOS transistor converting charges to be output by the photodetector into voltage; an electronic processing circuit configured to process the voltages outputted by the reading circuits; a first substrate on which are formed the pixels and the reading circuits, and a second substrate, distinct from the first substrate, on which is formed the electronic processing circuit, the second substrate being linked electrically to the first substrate by an electrical interconnection forming an electrical link between the reading circuits and the electronic processing circuit.
摘要:
The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.
摘要:
An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit being formed in a second semiconductor substrate, the second substrate being placed above the first substrate and separated therefrom by an intermediary insulating layer covering the access transistor, the photodiode receiving incident photons on its lower surface side opposite to the intermediary insulating layer.
摘要:
An analog image memory device using charge transfer and comprising:a memory zone of N lines of M memory points, each memory point being formed by the integration on the same semiconductor substrate of an MIS capacity separated from a diode by a screen grid,means for selecting each memory point,means for writing in each memory point a charge amount corresponding to the analog signal to be stored andmeans for reading the memory zone line by line after writing.
摘要:
The present invention concerns an analysis process of a line transfer photosensitive device.The charge-signal and the charge noise transfers from the columns towards the memory have the same duration and are made by using a same training charge, stored in memory, that must be at least sufficient to allow to pass in high inversion at the beginning of the transfer from the columns towards the memory. The transfers of the charge-signal and the charge-noise from the memory towards the read-out register or the drain have the same duration and are made by using training charges at least sufficient to allow to pass in high inversion at the beginning of the transfer. These training charges are read with the charge-signal or collected with the charge-noise.
摘要:
A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.
摘要:
A time-delay-integration image sensor comprises a matrix of pixels organized in rows and columns. Each pixel comprises a first photosensitive element, a storage node and a first transfer element connected between the first photosensitive element and the storage node, Each pixel further comprises a second photosensitive element, a second transfer element connected between the second photosensitive element and the storage node, and a third transfer element connected between the storage node and the second photosensitive element of an adjacent pixel of the column. A control circuit is configured to simultaneously command the first and second transfer elements to on state and the third transfer element to off state, and, in a distinct phase, to simultaneously command the first and third transfer elements to on state and the second transfer element to off state.
摘要:
The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.
摘要:
An time-delay-integration image sensor comprises a matrix of photosensitive pixels organized in rows and columns, a first matrix of memory cells associated with control and adding means to store accumulated brightness levels of several rows of pixels in a row of memory cells. The first memory cell matrix is provided with the control and adding means to store in its rows accumulated brightness levels of the rows of a first half of the pixel matrix. The sensor comprises a second memory cell matrix associated with the control and adding means to store accumulated brightness levels of the rows of the second half of the pixel matrix in a row of the second memory cell matrix. Means are provided for adding the levels accumulated in a row of the first memory cell matrix to the levels accumulated in a corresponding row of the second memory cell matrix.