CMOS imaging device with three-dimensional architecture having reading circuits and an electronic processing circuit arranged on different substrates
    1.
    发明授权
    CMOS imaging device with three-dimensional architecture having reading circuits and an electronic processing circuit arranged on different substrates 有权
    具有三维结构的具有读取电路的CMOS成像装置和布置在不同基板上的电子处理电路

    公开(公告)号:US08969773B2

    公开(公告)日:2015-03-03

    申请号:US13637223

    申请日:2011-03-25

    IPC分类号: H01L27/00 H01L27/146

    摘要: An imaging device including: plural pixels each including a photodetector; plural reading circuits associated with the plural photodetectors, each reading circuit including a first MOS transistor charging/discharging a photodetector and a second MOS transistor converting charges to be output by the photodetector into voltage; an electronic processing circuit configured to process the voltages outputted by the reading circuits; a first substrate on which are formed the pixels and the reading circuits, and a second substrate, distinct from the first substrate, on which is formed the electronic processing circuit, the second substrate being linked electrically to the first substrate by an electrical interconnection forming an electrical link between the reading circuits and the electronic processing circuit.

    摘要翻译: 一种成像装置,包括:多个像素,每个像素包括光电检测器; 与多个光电检测器相关联的多个读取电路,每个读取电路包括对光电检测器进行充电/放电的第一MOS晶体管和将由光电检测器输出的电荷转换为电压的第二MOS晶体管; 电子处理电路,被配置为处理由所述读取电路输出的电压; 其上形成有像素和读取电路的第一衬底和与第一衬底不同的第二衬底,在其上形成电子处理电路,第二衬底通过电互连电连接到第一衬底,形成 读取电路和电子处理电路之间的电连接。

    CMOS IMAGING DEVICE WITH THREE-DIMENSIONAL ARCHITECTURE
    2.
    发明申请
    CMOS IMAGING DEVICE WITH THREE-DIMENSIONAL ARCHITECTURE 有权
    具有三维结构的CMOS成像装置

    公开(公告)号:US20130048832A1

    公开(公告)日:2013-02-28

    申请号:US13637223

    申请日:2011-03-25

    IPC分类号: H01L27/146

    摘要: An imaging device including: plural pixels each including a photodetector; plural reading circuits associated with the plural photodetectors, each reading circuit including a first MOS transistor charging/discharging a photodetector and a second MOS transistor converting charges to be output by the photodetector into voltage; an electronic processing circuit configured to process the voltages outputted by the reading circuits; a first substrate on which are formed the pixels and the reading circuits, and a second substrate, distinct from the first substrate, on which is formed the electronic processing circuit, the second substrate being linked electrically to the first substrate by an electrical interconnection forming an electrical link between the reading circuits and the electronic processing circuit.

    摘要翻译: 一种成像装置,包括:多个像素,每个像素包括光电检测器; 与多个光电检测器相关联的多个读取电路,每个读取电路包括对光电检测器进行充电/放电的第一MOS晶体管和将由光电检测器输出的电荷转换为电压的第二MOS晶体管; 电子处理电路,被配置为处理由所述读取电路输出的电压; 其上形成有像素和读取电路的第一衬底和与第一衬底不同的第二衬底,在其上形成电子处理电路,第二衬底通过电互连电连接到第一衬底,形成 读取电路和电子处理电路之间的电连接。

    Visible and near-infrared radiation detector

    公开(公告)号:US09880057B2

    公开(公告)日:2018-01-30

    申请号:US13882944

    申请日:2011-11-03

    摘要: The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.

    Image sensor
    4.
    发明授权
    Image sensor 有权
    图像传感器

    公开(公告)号:US07417268B2

    公开(公告)日:2008-08-26

    申请号:US11490308

    申请日:2006-07-20

    IPC分类号: H01L27/148

    摘要: An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit being formed in a second semiconductor substrate, the second substrate being placed above the first substrate and separated therefrom by an intermediary insulating layer covering the access transistor, the photodiode receiving incident photons on its lower surface side opposite to the intermediary insulating layer.

    摘要翻译: 一种图像传感器,包括像素组件,每个像素包括光电二极管和连接到读取电路的存取晶体管,所述光电二极管和存取晶体管形成在第一半导体衬底中和上方,全部或部分读取电路形成为 第二半导体衬底,第二衬底被放置在第一衬底之上,并通过覆盖存取晶体管的中间绝缘层与其隔开,光电二极管在其与中间绝缘层相对的下表面侧接收入射光子。

    Analog image memory device using charge transfer
    5.
    发明授权
    Analog image memory device using charge transfer 失效
    使用电荷转移的模拟图像存储器件

    公开(公告)号:US4760558A

    公开(公告)日:1988-07-26

    申请号:US742617

    申请日:1985-06-07

    CPC分类号: H01L27/1057 G11C27/04

    摘要: An analog image memory device using charge transfer and comprising:a memory zone of N lines of M memory points, each memory point being formed by the integration on the same semiconductor substrate of an MIS capacity separated from a diode by a screen grid,means for selecting each memory point,means for writing in each memory point a charge amount corresponding to the analog signal to be stored andmeans for reading the memory zone line by line after writing.

    摘要翻译: 一种使用电荷转移的模拟图像存储器件,包括:M个存储点的N行的存储区,每个存储点通过在通过屏幕栅极与二极管分离的MIS容量的相同半导体衬底上的积分形成; 选择每个存储点,用于在每个存储器中写入与要存储的模拟信号相对应的电荷量的装置,以及用于在写入之后逐行读取存储区的装置。

    Analysis process of a line transfer photosensitive device and operating
device of such a process
    6.
    发明授权
    Analysis process of a line transfer photosensitive device and operating device of such a process 失效
    线路传输感光装置和操作装置的分析过程

    公开(公告)号:US4684993A

    公开(公告)日:1987-08-04

    申请号:US869133

    申请日:1986-05-30

    摘要: The present invention concerns an analysis process of a line transfer photosensitive device.The charge-signal and the charge noise transfers from the columns towards the memory have the same duration and are made by using a same training charge, stored in memory, that must be at least sufficient to allow to pass in high inversion at the beginning of the transfer from the columns towards the memory. The transfers of the charge-signal and the charge-noise from the memory towards the read-out register or the drain have the same duration and are made by using training charges at least sufficient to allow to pass in high inversion at the beginning of the transfer. These training charges are read with the charge-signal or collected with the charge-noise.

    摘要翻译: 本发明涉及一种线转印感光装置的分析方法。 从列到存储器的充电信号和充电噪声传输具有相同的持续时间,并且通过使用存储在存储器中的相同训练电荷来进行,其必须至少足以允许在开始时通过高反转 从列转移到记忆体。 电荷信号和充电噪声从存储器向读出寄存器或漏极的传输具有相同的持续时间,并且通过使用训练电荷至少足以允许在开始时的高反转中通过 转让。 这些培训费用是用充电信号读取的或用充电噪声收集的。

    Pinned photodiode CMOS image sensor with a low supply voltage
    7.
    发明授权
    Pinned photodiode CMOS image sensor with a low supply voltage 有权
    固定光电二极管CMOS图像传感器具有低电源电压

    公开(公告)号:US09191597B2

    公开(公告)日:2015-11-17

    申请号:US13605685

    申请日:2012-09-06

    IPC分类号: H04N3/14 H04N5/3745 H04N5/359

    CPC分类号: H04N5/3745 H04N5/3597

    摘要: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

    摘要翻译: 一种用于控制图像传感器的装置,包括至少一个感光单元,该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管,所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路,其能够在将光电二极管放电到感测节点期间增加源极的电压。

    Linear image sensor in CMOS technology
    8.
    发明授权
    Linear image sensor in CMOS technology 有权
    CMOS技术中的线性图像传感器

    公开(公告)号:US08817150B2

    公开(公告)日:2014-08-26

    申请号:US13152333

    申请日:2011-06-03

    摘要: A time-delay-integration image sensor comprises a matrix of pixels organized in rows and columns. Each pixel comprises a first photosensitive element, a storage node and a first transfer element connected between the first photosensitive element and the storage node, Each pixel further comprises a second photosensitive element, a second transfer element connected between the second photosensitive element and the storage node, and a third transfer element connected between the storage node and the second photosensitive element of an adjacent pixel of the column. A control circuit is configured to simultaneously command the first and second transfer elements to on state and the third transfer element to off state, and, in a distinct phase, to simultaneously command the first and third transfer elements to on state and the second transfer element to off state.

    摘要翻译: 时间延迟积分图像传感器包括以行和列组织的像素矩阵。 每个像素包括第一感光元件,存储节点和连接在第一感光元件和存储节点之间的第一传输元件。每个像素还包括第二感光元件,连接在第二感光元件和存储节点之间的第二传输元件 以及连接在该列的相邻像素的存储节点和第二感光元件之间的第三传送元件。 控制电路被配置为同时将第一和第二传递元件命令为导通状态,并将第三传递元件命令为断开状态,并且在不同的相位中,同时将第一和第三传递元件命令为接通状态,并且第二传递元件 关闭状态。

    VISIBLE AND NEAR-INFRARED RADIATION DETECTOR
    9.
    发明申请
    VISIBLE AND NEAR-INFRARED RADIATION DETECTOR 有权
    可见和近红外辐射探测器

    公开(公告)号:US20130214161A1

    公开(公告)日:2013-08-22

    申请号:US13882944

    申请日:2011-11-03

    IPC分类号: G01J5/08 H01L27/144

    摘要: The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.

    摘要翻译: 可见光和近红外辐射的检测器包括近红外光敏元件,用于读取近红外感光元件的读出电路,四个可见感光元件,其中一个面向近红外感光元件放置,四个着色 树脂过滤器来定义像素四元组。 包括近红外光敏元件和可见感光元件之一的第一像素设置有对可见光辐射不透明的树脂滤光片。 分别包含三个可见感光元件的三个其他像素分别设置有与三原色相关联的滤光片。

    TDI image sensor in CMOS technology with high video capture rate
    10.
    发明授权
    TDI image sensor in CMOS technology with high video capture rate 有权
    TDI图像传感器采用CMOS技术,视频采集率高

    公开(公告)号:US08451354B2

    公开(公告)日:2013-05-28

    申请号:US13103492

    申请日:2011-05-09

    IPC分类号: H04N3/14 H04N5/335

    CPC分类号: H04N5/3743

    摘要: An time-delay-integration image sensor comprises a matrix of photosensitive pixels organized in rows and columns, a first matrix of memory cells associated with control and adding means to store accumulated brightness levels of several rows of pixels in a row of memory cells. The first memory cell matrix is provided with the control and adding means to store in its rows accumulated brightness levels of the rows of a first half of the pixel matrix. The sensor comprises a second memory cell matrix associated with the control and adding means to store accumulated brightness levels of the rows of the second half of the pixel matrix in a row of the second memory cell matrix. Means are provided for adding the levels accumulated in a row of the first memory cell matrix to the levels accumulated in a corresponding row of the second memory cell matrix.

    摘要翻译: 时间延迟积分图像传感器包括以行和列组织的感光像素的矩阵,与控制相关联的存储器单元的第一矩阵和用于存储存储器单元行中的几行像素的累积亮度级别的附加装置。 第一存储单元矩阵设置有控制和加法装置,用于在其行中存储像素矩阵的前半部分的行的累积亮度级。 所述传感器包括与所述控制相关联的第二存储单元阵列和用于将所述像素矩阵的后半部分的行的累积亮度级别存储在所述第二存储单元矩阵的行中的相加装置。 提供了用于将第一存储单元矩阵的一行中累积的电平加到累积在第二存储单元矩阵的对应行中的电平的装置。