公开(公告)号：US20240372324A1

公开(公告)日：2024-11-07

申请号：US18143517

申请日：2023-05-04

Applicant: Apple Inc.

Inventor： Chin-Han Lin ,  Nicolas Hotellier ,  Alexander Hein ,  Siddharth Joshi ,  Fei Tan

IPC: H01S5/10 ,  H01S5/02 ,  H01S5/0237 ,  H01S5/183

Abstract: A laser assembly includes a set of one or more substrates having a first surface opposite a second surface. The set of one or more substrates defines a resonant cavity extension. The resonant cavity extension extends into the set of one or more substrates from an opening in the first surface. The laser assembly further includes a first reflector disposed within the resonant cavity extension and configured to reflect at least one wavelength of electromagnetic radiation received through the opening back through the opening; a laser having an active region configured to generate the at least one wavelength of electromagnetic radiation; and a second reflector. The active region is disposed in a resonant cavity extending between the first reflector and the second reflector. The resonant cavity includes the resonant cavity extension.

公开(公告)号：US20240006858A1

公开(公告)日：2024-01-04

申请号：US18142812

申请日：2023-05-03

Applicant: Apple Inc.

Inventor： Tong Chen ,  Pengfei Qiao ,  Fei Tan

IPC: H01S5/42 ,  H01S5/183 ,  H01S5/026 ,  H01S5/343

CPC classification number: H01S5/423 ,  H01S5/18394 ,  H01S5/0262 ,  H01S5/34313

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors that include a multi-junction (MJ) vertical-cavity surface-emitting laser (VCSEL) diode that emits laser light in two directions, one direction being directed toward a receiving photodiode and another toward an object. Reflections from the object induce self-mixing interference within a resonance cavity of the MJ-VCSEL altering a wavelength of the emitted laser light. The SMI may infer distance and/or motion of the object from the alterations in the wavelength. In various embodiments, the MJ-VCSEL and photodiode are successively formed as a single unit upon a single substrate. In other embodiments, the MJ-VCSEL and the photodiode may be formed on separate wafers or chips that are then joined at a common interface surface. Arrays of combinations of MJ-VCSELs and associated photodiodes may be included in an SMI.

公开(公告)号：US20230152081A1

公开(公告)日：2023-05-18

申请号：US18094255

申请日：2023-01-06

Applicant: Apple Inc.

Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chin Han Lin ,  Keith Lyon ,  Marc A. Drader ,  Weiping Li

IPC: G01B9/02097 ,  H01S5/026 ,  H01S5/343 ,  H01S5/183 ,  H01S5/30 ,  G01B9/02 ,  G01B11/02 ,  G01S17/34 ,  G01S7/4912

CPC classification number: G01B9/02097 ,  H01S5/0262 ,  H01S5/3432 ,  H01S5/18313 ,  H01S5/3095 ,  G01B9/02092 ,  G01B11/026 ,  H01S5/183 ,  G01S17/34 ,  G01S7/4916

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

公开(公告)号：US11549799B2

公开(公告)日：2023-01-10

申请号：US16913645

申请日：2020-06-26

Applicant: Apple Inc.

Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chin Han Lin ,  Keith Lyon ,  Marc A. Drader ,  Weiping Li

IPC: G01B9/02 ,  G01B9/02097 ,  H01S5/026 ,  H01S5/343 ,  H01S5/183 ,  H01S5/30 ,  G01B11/02 ,  G01S17/34 ,  G01S7/4912

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

公开(公告)号：US20220069545A1

公开(公告)日：2022-03-03

申请号：US17378711

申请日：2021-07-18

Applicant: Apple Inc.

Inventor： Harish Venkataraman ,  Chinhan Lin ,  Fei Tan ,  Ido Luft ,  Moshe Laifenfeld ,  Susan A. Thompson

IPC: H01S5/042 ,  H03K17/687

Abstract: An optoelectronic device includes a laser diode, a driver and a reverse-bias circuit. The laser diode has a first terminal and a second terminal. The driver is coupled to drive current pulses through the laser diode between the first and second terminals. The reverse-bias circuit is configured to reverse-bias the laser diode during time intervals derived from the current pulses.

公开(公告)号：US20210336422A1

公开(公告)日：2021-10-28

申请号：US17228742

申请日：2021-04-13

Applicant: Apple Inc.

Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chinhan Lin ,  Christophe Verove ,  Jae Y Park

IPC: H01S5/183 ,  H01S5/343 ,  H01S5/042

Abstract: An optoelectronic device includes: (i) a semiconductor substrate doped with a first level of n-type dopants, (ii) a contact semiconductor layer disposed over the semiconductor substrate and doped with a second level of n-type dopants, larger than the first level, (iii) an upper distributed Bragg-reflector (DBR) stack disposed over the contact semiconductor layer and including alternating first and second epitaxial semiconductor layers having respective first and second indexes of refraction that differ from one another in a predefined wavelength band, (iv) a set of epitaxial layers disposed over the upper DBR, the set of epitaxial layers includes one or more III-V semiconductor materials and defines: (a) a quantum well structure, and (b) a confinement layer, and (v) a lower DBR stack disposed over the set of epitaxial layers, opposite the upper DBR, and including alternating dielectric and semiconductor layers.