公开(公告)号：US11373845B2

公开(公告)日：2022-06-28

申请号：US16894002

申请日：2020-06-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Tae Seung Cho ,  Saravana Kumar Natarajan ,  Kenneth D. Schatz ,  Dmitry Lubomirsky ,  Samartha Subramanya

IPC: H01J37/32 ,  H05H1/46

Abstract: Methods and apparatus for reducing particle generation in a remote plasma source (RPS) include an RPS having a first plasma source with a first electrode and a second electrode, wherein the first electrode and the second electrode are symmetrical with hollow cavities configured to induce a hollow cathode effect within the hollow cavities, and wherein the RPS provides radicals or ions into the processing volume, and a radio frequency (RF) power source configured to provide a symmetrical driving waveform on the first electrode and the second electrode to produce an anodic cycle and a cathodic cycle of the RPS, wherein the anodic cycle and the cathodic cycle operate in a hollow cathode effect mode.

公开(公告)号：US20220165539A1

公开(公告)日：2022-05-26

申请号：US17100927

申请日：2020-11-22

Applicant: Applied Materials, Inc.

Inventor： Soonwook Jung ,  Kenneth D. Schatz

IPC: H01J37/32 ,  H01L21/311

Abstract: A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.

公开(公告)号：US20210082665A1

公开(公告)日：2021-03-18

申请号：US17017495

申请日：2020-09-10

Applicant: Applied Materials, Inc.

Inventor： Greg Toland ,  Kenneth D. Schatz ,  Laksheswar Kalita ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67

Abstract: Exemplary semiconductor processing systems may include a pedestal configured to support a semiconductor substrate. The pedestal may be operable as a first plasma-generating electrode. The systems may include a lid plate defining a radial volume. The systems may include a faceplate supported with the lid plate. The faceplate may be operable as a second plasma-generating electrode. A plasma processing region may be defined between the pedestal and the faceplate within the radial volume defined by the faceplate. The faceplate may define a plurality of first apertures. The systems may include a showerhead positioned between the faceplate and the pedestal. The showerhead may define a plurality of second apertures comprising a greater number of apertures than the plurality of first apertures.

公开(公告)号：US20200328065A1

公开(公告)日：2020-10-15

申请号：US16915028

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Saravjeet Singh ,  Dmitry Lubomirsky ,  Tae Wan Kim ,  Kenneth D. Schatz ,  Tae Seung Cho ,  Lok Kee Loh

IPC: H01J37/32 ,  H01J37/04

Abstract: An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes.

公开(公告)号：US20190318911A1

公开(公告)日：2019-10-17

申请号：US15955588

申请日：2018-04-17

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Saravjeet Singh ,  Dmitry Lubomirsky ,  Tae Wan Kim ,  Kenneth D. Schatz ,  Tae Seung Cho ,  Lok Kee Loh

IPC: H01J37/32 ,  H01J37/04

Abstract: An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes, and the gap distance is between 0.005 inch and 0.050 inch.

公开(公告)号：US09922840B2

公开(公告)日：2018-03-20

申请号：US14793508

申请日：2015-07-07

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Kenneth D. Schatz ,  Soonwook Jung ,  Dmitry Lubomirsky

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/67069

Abstract: Methods of selectively etching an exposed portion of a patterned substrate relative to a second exposed portion are described. The etching process is a gas phase etch which uses an oxidizing precursor unexcited in any plasma prior to combination with plasma effluents formed in a remote plasma from an inert precursor. The plasma effluents may be combined with the oxidizing precursor in a plasma-free remote chamber region and/or in a plasma-free substrate processing region. The combination of the plasma effluents excites the oxidizing precursor and removes material from the exposed portion of the patterned substrate. The etch rate is controllable and selectable by adjusting the flow rate of the oxidizing precursor or the unexcited/plasma-excited flow rate ratio.