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公开(公告)号：US12148597B2
公开(公告)日：2024-11-19
申请号：US18168467
申请日：2023-02-13
Applicant: Applied Materials, Inc.
Inventor： Saravjeet Singh , Kenneth D. Schatz , Alan Tso , Marlin Wijekoon , Dimitri Kioussis
IPC: H01L21/02 , H01J37/32 , H01L21/311
Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.
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公开(公告)号：US10903054B2
公开(公告)日：2021-01-26
申请号：US15847411
申请日：2017-12-19
Applicant: Applied Materials, Inc.
Inventor： Saravjeet Singh , Kenneth D. Schatz , Alan Tso , Marlin Wijekoon , Dimitri Kioussis
IPC: H01J37/32 , H01L21/02 , H01L21/311
Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.
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公开(公告)号：US20230005765A1
公开(公告)日：2023-01-05
申请号：US17366761
申请日：2021-07-02
Applicant: Applied Materials, Inc.
Inventor： Son T. Nguyen , Kenneth D. Schatz , Anh N. Nguyen , Soonwook Jung , Ryan Pakulski , Anchuan Wang , Zihui Li
Abstract: Exemplary semiconductor processing systems may include a processing chamber. The systems may include a remote plasma unit coupled with the processing chamber. The systems may include an adapter coupled between the remote plasma unit and the processing chamber. The adapter may be characterized by a first end and a second end opposite the first end. The remote plasma unit may be coupled with the adapter at the first end. The adapter may define a first central channel extending more than 50% of a length of the adapter from the first end of the adapter. The adapter may define a second central channel extending less than 50% of the length of the adapter from the second end of the adapter. The adapter may define a transition between the first central channel and the second central channel.
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公开(公告)号：US20210265134A1
公开(公告)日：2021-08-26
申请号：US17157224
申请日：2021-01-25
Applicant: Applied Materials, Inc.
Inventor： Saravjeet Singh , Kenneth D. Schatz , Alan Tso , Marlin Wijekoon , Dimitri Kioussis
Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.
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公开(公告)号：US10593560B2
公开(公告)日：2020-03-17
申请号：US15909812
申请日：2018-03-01
Applicant: Applied Materials, Inc.
Inventor： Tae Seung Cho , Soonwook Jung , Junghoon Kim , Satoru Kobayashi , Kenneth D. Schatz , Soonam Park , Dmitry Lubomirsky
IPC: C23C16/00 , H01L21/316 , H01L21/3213 , H01L21/67 , H01L21/3105 , H01J37/32 , H05H1/46
Abstract: Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.
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Patent Agency Ranking
公开(公告)号：US11915911B2
公开(公告)日：2024-02-27
申请号：US16915028
申请日：2020-06-29
Applicant: Applied Materials, Inc.
Inventor： Tien Fak Tan , Saravjeet Singh , Dmitry Lubomirsky , Tae Wan Kim , Kenneth D. Schatz , Tae Seung Cho , Lok Kee Loh
CPC classification number: H01J37/32091 , H01J37/04
Abstract: An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes.
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公开(公告)号：US11557464B2
公开(公告)日：2023-01-17
申请号：US16891803
申请日：2020-06-03
Applicant: Applied Materials, Inc.
Inventor： Laksheswar Kalita , Son Nguyen , Dmitry Lubomirsky , Kenneth D. Schatz
IPC: H01L21/67 , H01L21/3065 , H01J37/32 , C23C16/40
Abstract: Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp2 to sp3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.
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公开(公告)号：US20170011931A1
公开(公告)日：2017-01-12
申请号：US14793508
申请日：2015-07-07
Applicant: Applied Materials, Inc.
Inventor： Soonam Park , Kenneth D. Schatz , Soonwook Jung , Dmitry Lubomirsky
IPC: H01L21/311
CPC classification number: H01L21/31116 , H01J37/32357 , H01J37/3244 , H01J2237/334 , H01L21/3065 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/67069
Abstract: Methods of selectively etching an exposed portion of a patterned substrate relative to a second exposed portion are described. The etching process is a gas phase etch which uses an oxidizing precursor unexcited in any plasma prior to combination with plasma effluents formed in a remote plasma from an inert precursor. The plasma effluents may be combined with the oxidizing precursor in a plasma-free remote chamber region and/or in a plasma-free substrate processing region. The combination of the plasma effluents excites the oxidizing precursor and removes material from the exposed portion of the patterned substrate. The etch rate is controllable and selectable by adjusting the flow rate of the oxidizing precursor or the unexcited/plasma-excited flow rate ratio.
Abstract translation: 描述了相对于第二暴露部分选择性地蚀刻图案化衬底的暴露部分的方法。 蚀刻工艺是气相蚀刻，其在与来自惰性前体的远程等离子体中形成的等离子体流出物组合之前，使用在任何等离子体中未激发的氧化前体。 等离子体流出物可以在无等离子体的远程室区域和/或无等离子体的衬底处理区域中与氧化前体组合。 等离子体流出物的组合激发氧化前体并从图案化衬底的暴露部分去除材料。 蚀刻速率可以通过调节氧化前驱体的流量或者非激发/等离子体激发的流量比来控制和选择。
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公开(公告)号：US11894217B2
公开(公告)日：2024-02-06
申请号：US18112207
申请日：2023-02-21
Applicant: Applied Materials, Inc.
Inventor： Soonwook Jung , Kenneth D. Schatz
IPC: H01J37/32 , H01L21/311
CPC classification number: H01J37/32082 , H01J37/32926 , H01L21/31116 , H01J2237/334
Abstract: A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.
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公开(公告)号：US20230197416A1
公开(公告)日：2023-06-22
申请号：US18168467
申请日：2023-02-13
Applicant: Applied Materials, Inc.
Inventor： Saravjeet Singh , Kenneth D. Schatz , Alan Tso , Marlin Wijekoon , Dimitri Kioussis
CPC classification number: H01J37/32449 , H01J37/32862 , H01L21/02049 , H01L21/31116
Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.
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