公开(公告)号：US10522371B2

公开(公告)日：2019-12-31

申请号：US15159478

申请日：2016-05-19

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Lok Kee Loh ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Martin Yue Choy ,  Soonam Park

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065

Abstract: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

公开(公告)号：US10699879B2

公开(公告)日：2020-06-30

申请号：US15955588

申请日：2018-04-17

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Saravjeet Singh ,  Dmitry Lubomirsky ,  Tae Wan Kim ,  Kenneth D. Schatz ,  Tae Seung Cho ,  Lok Kee Loh

IPC: H01J37/32 ,  H01J37/04

Abstract: An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes, and the gap distance is between 0.005 inch and 0.050 inch.

公开(公告)号：US20250095968A1

公开(公告)日：2025-03-20

申请号：US18370132

申请日：2023-09-19

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Nitin K. Ingle ,  Nilesh Mistry ,  Jonathan J. Strahle ,  Christopher L. Beaudry ,  Lok Kee Loh

IPC: H01J37/32

Abstract: Exemplary methods for a coating a component of a semiconductor processing system may include forming a nickel-containing alloy on an exposed surface the component of the semiconductor processing system. The methods may include forming plasma effluents of a fluorine-containing precursor. The methods may include contacting the nickel-containing alloy with the plasma effluents of the fluorine-containing precursor. The contacting may fluorinate a portion of the nickel-containing alloy to form a nickel-and-fluorine-containing material overlying the nickel-containing alloy.

公开(公告)号：US11915911B2

公开(公告)日：2024-02-27

申请号：US16915028

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Saravjeet Singh ,  Dmitry Lubomirsky ,  Tae Wan Kim ,  Kenneth D. Schatz ,  Tae Seung Cho ,  Lok Kee Loh

IPC: H01J37/32 ,  H01J37/04

CPC classification number: H01J37/32091 ,  H01J37/04

Abstract: An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes.

公开(公告)号：US20170338133A1

公开(公告)日：2017-11-23

申请号：US15159478

申请日：2016-05-19

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Lok Kee Loh ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Martin Yue Choy ,  Soonam Park

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32513 ,  H01J37/32807 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/6719

Abstract: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

公开(公告)号：US11735441B2

公开(公告)日：2023-08-22

申请号：US16707379

申请日：2019-12-09

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Lok Kee Loh ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Martin Yue Choy ,  Soonam Park

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/324

CPC classification number: H01L21/67069 ,  H01J37/3244 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32495 ,  H01J37/32513 ,  H01J37/32816 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/6719 ,  H01L21/67109 ,  H01J2237/334

Abstract: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

公开(公告)号：US20200328065A1

公开(公告)日：2020-10-15

申请号：US16915028

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Saravjeet Singh ,  Dmitry Lubomirsky ,  Tae Wan Kim ,  Kenneth D. Schatz ,  Tae Seung Cho ,  Lok Kee Loh

IPC: H01J37/32 ,  H01J37/04

Abstract: An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes.

公开(公告)号：US20190318911A1

公开(公告)日：2019-10-17

申请号：US15955588

申请日：2018-04-17

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Saravjeet Singh ,  Dmitry Lubomirsky ,  Tae Wan Kim ,  Kenneth D. Schatz ,  Tae Seung Cho ,  Lok Kee Loh

IPC: H01J37/32 ,  H01J37/04

Abstract: An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes, and the gap distance is between 0.005 inch and 0.050 inch.

公开(公告)号：US20170338134A1

公开(公告)日：2017-11-23

申请号：US15159530

申请日：2016-05-19

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Lok Kee Loh ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Martin Yue Choy ,  Soonam Park

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/324

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J37/32513 ,  H01J37/32816 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/6719

Abstract: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.