中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

53 records (took 0.026 seconds)

    PLASMA CHAMBER AND CHAMBER COMPONENT CLEANING METHODS
    21.
    发明申请
    PLASMA CHAMBER AND CHAMBER COMPONENT CLEANING METHODS 有权

    公开(公告)号：US20220399194A1

    公开(公告)日：2022-12-15

    申请号：US17562467

    申请日：2021-12-27

    Applicant: Applied Materials, Inc.

    Inventor： Rajinder DHINDSA ,  Linying CUI ,  James ROGERS

    IPC: H01J37/32

    Abstract: Embodiments provided herein generally include plasma processing systems configured to preferentially clean desired surfaces of a substrate support assembly by manipulating one or more characteristics of an in-situ plasma and related methods. In one embodiment, a plasma processing method includes generating a plasma in a processing region defined by a chamber lid and a substrate support assembly, exposing an edge ring and a substrate supporting surface to the plasma, and establishing a pulsed voltage (PV) waveform at the edge control electrode.

    PLASMA CHAMBER AND CHAMBER COMPONENT CLEANING METHODS
    22.
    发明申请
    PLASMA CHAMBER AND CHAMBER COMPONENT CLEANING METHODS 有权

    公开(公告)号：US20220399185A1

    公开(公告)日：2022-12-15

    申请号：US17562442

    申请日：2021-12-27

    Applicant: Applied Materials, Inc.

    Inventor： Rajinder DHINDSA ,  Linying CUI ,  James ROGERS

    IPC: H01J37/32 ,  H01L21/02

    Abstract: Embodiments provided herein generally include plasma processing systems configured to preferentially clean desired surfaces of a substrate support assembly by manipulating one or more characteristics of an in-situ plasma and related methods. In one embodiment, a plasma processing method includes generating a plasma in a processing region defined by a chamber lid and a substrate support assembly, exposing an edge ring and a substrate supporting surface to the plasma, and establishing a pulsed voltage (PV) waveform at the edge control electrode.

    METHOD OF ENHANCING ETCHING SELECTIVITY USING A PULSED PLASMA
    23.
    发明申请
    METHOD OF ENHANCING ETCHING SELECTIVITY USING A PULSED PLASMA 有权

    公开(公告)号：US20220336222A1

    公开(公告)日：2022-10-20

    申请号：US17244873

    申请日：2021-04-29

    Applicant: Applied Materials, Inc.

    Inventor： Hailong ZHOU ,  Sean KANG ,  Kenji TAKESHITA ,  Rajinder DHINDSA ,  Taehwan LEE ,  Iljo KWAK

    IPC: H01L21/311

    Abstract: Embodiments of this disclosure include a method of processing a substrate that includes etching a first dielectric material formed on a substrate that is disposed on a substrate supporting surface of a substrate support assembly disposed within a processing region of a plasma processing chamber. The etching process may include delivering a process gas to the processing region, wherein the process gas comprises a first fluorocarbon containing gas and a first process gas, delivering, by use of a radio frequency generator, a radio frequency signal to a first electrode to form a plasma in the processing region, and establishing, by use of a first pulsed-voltage waveform generator, a first pulsed voltage waveform at a biasing electrode disposed within the substrate support assembly. The first pulsed voltage waveform comprises a series of repeating pulsed waveform cycles that each include a first portion that occurs during a first time interval, a second portion that occurs during a second time interval, and a peak-to-peak voltage. The pulsed voltage waveform is substantially constant during at least a portion of the second time interval.

    TEMPERATURE AND BIAS CONTROL OF EDGE RING
    25.
    发明申请
    TEMPERATURE AND BIAS CONTROL OF EDGE RING 有权

    公开(公告)号：US20210313156A1

    公开(公告)日：2021-10-07

    申请号：US17351977

    申请日：2021-06-18

    Applicant: Applied Materials, Inc.

    Inventor： James ROGERS ,  Linying CUI ,  Rajinder DHINDSA

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065

    Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma-assisted processing thereof. In one embodiment, a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate, and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded in the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

    APPARATUS AND METHOD FOR CONTROLLING EDGE RING VARIATION
    26.
    发明申请
    APPARATUS AND METHOD FOR CONTROLLING EDGE RING VARIATION 有权

    公开(公告)号：US20210254957A1

    公开(公告)日：2021-08-19

    申请号：US17161271

    申请日：2021-01-28

    Applicant: Applied Materials, Inc.

    Inventor： Sathyendra GHANTASALA ,  Leonid DORF ,  Evgeny KAMENETSKIY ,  Peter MURAOKA ,  Denis M. KOOSAU ,  Rajinder DHINDSA ,  Andreas SCHMID

    IPC: G01B7/06 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

    Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.

    METHODS FOR FORMING AND ETCHING STRUCTURES FOR PATTERNING PROCESSES
    28.
    发明申请
    METHODS FOR FORMING AND ETCHING STRUCTURES FOR PATTERNING PROCESSES 审中-公开

    公开(公告)号：US20200058503A1

    公开(公告)日：2020-02-20

    申请号：US16521306

    申请日：2019-07-24

    Applicant: Applied Materials, Inc.

    Inventor： Vinay Shankar VIDYARTHI ,  Rajinder DHINDSA

    IPC: H01L21/033 ,  H01L21/311 ,  H01L21/02

    Abstract: Embodiments of the present disclosure provide methods and apparatus for forming and patterning a spacer layer for multi-patterning processes. In one embodiment, a method for patterning a spacer layer on a substrate includes forming a protective layer on a spacer layer disposed on a structure disposed on a substrate, wherein the protective layer is formed predominately on a top surface of the spacer layer, than a bottom surface of the spacer layer, etching the spacer layer from the bottom surface, forming a polymer layer on the substrate, etching a top portion of the polymer layer and a first portion the spacer layer located the top surface of the structure, and removing the structure from the substrate and leaving a second portion the spacer layer on the substrate.

Patent Agency Ranking