公开(公告)号：US10707106B2

公开(公告)日：2020-07-07

申请号：US15060412

申请日：2016-03-03

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori ,  Takayuki Yamagishi

IPC: H01L21/67 ,  H01L21/677 ,  C23C16/50 ,  C23C16/52 ,  G05B19/418

Abstract: A wafer-processing apparatus includes: multiple discrete units of reactors disposed on the same plane; a wafer-handling chamber having a polygonal shape having multiple sides corresponding to and being attached to the multiple discrete units, respectively, and one additional side for a load lock chamber; a load lock chamber attached to the one additional side of the wafer-handling chamber; multiple discrete gas boxes for controlling gases corresponding to and being connected to the multiple discrete units, respectively; and multiple discrete electric boxes for controlling electric systems corresponding to and being detachably connected to the multiple discrete units, respectively, wherein the gas boxes and the electric boxes are arranged alternately as viewed from above under the multiple discrete units, and the electric boxes can be pulled out outwardly without being disconnected from the corresponding units so that sides of the gas boxes are accessible.

公开(公告)号：US10204790B2

公开(公告)日：2019-02-12

申请号：US14811370

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: H01L21/02 ,  H01L21/285 ,  C23C16/04 ,  C23C16/455 ,  C23C16/54 ,  H01L21/768

Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

公开(公告)号：US20250011927A1

公开(公告)日：2025-01-09

申请号：US18889542

申请日：2024-09-19

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  René Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US20240420931A1

公开(公告)日：2024-12-19

申请号：US18817577

申请日：2024-08-28

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus for processing a substrate may comprise a reaction chamber, a substrate support disposed within the reaction chamber and provided with a support surface to support the substrate, and a motor to provide a rotary movement, wherein the motor is controlled and configured to create a bidirectional rotary movement between the reaction chamber and the substrate support around an axis perpendicular to the support surface.

公开(公告)号：US12129546B2

公开(公告)日：2024-10-29

申请号：US17451299

申请日：2021-10-18

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  Rene Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US12106944B2

公开(公告)日：2024-10-01

申请号：US17334007

申请日：2021-05-28

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01J37/32715 ,  C23C16/45536 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/68764 ,  H01J2237/20214 ,  H01J2237/3321

Abstract: An apparatus for processing a substrate may comprise a reaction chamber, a substrate support disposed within the reaction chamber and provided with a support surface to support the substrate, and a motor to provide a rotary movement, wherein the motor is controlled and configured to create a bidirectional rotary movement between the reaction chamber and the substrate support around an axis perpendicular to the support surface.

公开(公告)号：US20230137187A1

公开(公告)日：2023-05-04

申请号：US18046302

申请日：2022-10-13

Applicant: ASM IP HOLDING B.V.

Inventor： Yukihiro Mori

IPC: C23C16/46 ,  C23C16/52 ,  C23C16/458 ,  H01L21/67

Abstract: Described herein are reactor chamber configurations in which susceptors are provided with one or more that or heaters equipped with fan-shaped separational temperature control functions. In some embodiments, the heaters, in conjunction with an active cooling mechanism may be configured to compensate for temperature non-uniformity caused by, for example, adjacent structures including heat sources and heat sinks. In some embodiments, separate temperature control may be achieved by multi-zone independent heating or cooling elements within each susceptor.

公开(公告)号：US11600503B2

公开(公告)日：2023-03-07

申请号：US17317794

申请日：2021-05-11

Applicant: ASM IP HOLDING B.V.

Inventor： Yukihiro Mori

IPC: H01L21/67

Abstract: A semiconductor processing system comprises a first, a second, and a third process module assembly. The third process module assembly is between the first and the second process module assemblies, and includes an opening for providing substrates to be processed in the various process module assemblies. The process modules are arranged laterally relative to the opening. The first and second process module assemblies each include an associated transfer chamber, an associated substrate transfer device, and a plurality of associated process modules attached the associated transfer chamber. The third process module assembly may include an associated transfer chamber, an associated substrate transfer device, and a single associated process module attached to the associated transfer chamber. The processing system is configured to sequentially load substrates into the process module assemblies neighboring the third process module assembly, and lastly load substrates into the process module of the third process module assembly.

公开(公告)号：US20210375598A1

公开(公告)日：2021-12-02

申请号：US17334007

申请日：2021-05-28

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  C23C16/455 ,  C23C16/505 ,  C23C16/458 ,  C23C16/52 ,  C23C16/46

Abstract: An apparatus for processing a substrate may comprise a reaction chamber, a substrate support disposed within the reaction chamber and provided with a support surface to support the substrate, and a motor to provide a rotary movement, wherein the motor is controlled and configured to create a bidirectional rotary movement between the reaction chamber and the substrate support around an axis perpendicular to the support surface.

公开(公告)号：US20200071828A1

公开(公告)日：2020-03-05

申请号：US16677446

申请日：2019-11-07

Applicant: ASM IP Holding B.V.

Inventor： Bert Jongbloed ,  Delphine Longrie ,  Robin Roelofs ,  Lucian Jdira ,  Suvi Haukka ,  Antti Niskanen ,  Jun Kawahara ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/02 ,  H01L21/285 ,  C23C16/54

Abstract: In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided. In some embodiments, a deposition reactor is provided comprising: a first station configured to contain a substrate, the first station comprising a first heating element; a second station configured to contain the substrate, the second station comprising a second heating element, wherein the first station is configured to contact the substrate with a first reactant in the first station in substantial isolation from the second station such that a layer of the first reactant is deposited on the substrate, wherein the first heating element is configured to heat the first station to a first station temperature during contacting of the substrate with the first reactant, wherein the second station is configured to contact the substrate with a second reactant in the second station substantially in the absence of the first reactant, and wherein the second heating element is configured to heat the second station to a second station temperature during contacting of the substrate with the second reactant, a transfer system; and a controller set to control a cycle of: moving the substrate via the transfer system to the first station, directing the first station to contact the substrate with the first reactant at the first station temperature, moving the substrate to the second station via the transfer system, and directing the second station to contact the substrate with the second reactant at the second station temperature, and further set to repeat the cycle until a film of desired thickness is formed on a surface of the substrate.