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公开(公告)号：US06451766B1
公开(公告)日：2002-09-17
申请号：US09969851
申请日：2001-10-03
IPC分类号： C07D31500
CPC分类号： C07D309/28 , Y10S530/807
摘要： Compounds of formula (I) or their salts or esters: [wherein R1 is alkyl or haloalkyl; R2 and R3 each represents hydrogen or aliphatic acyl; X is hydroxy, halogen, alkoxy, or a group of formula RaO—, where Ra is aliphatic acyl; Y is a group of formula RbRcN— or RbRcN—O—, where Rb and Rc each is hydrogen or alkyl; and Z is oxygen or sulfur] have excellent sialidase inhibitory activity and are therefore useful for the treatment and prevention of influenza and other viral diseases where the replication of the virus is susceptible to sialidase inhibitors.
摘要翻译： 式（I）化合物或其盐或酯：[其中R1是烷基或卤代烷基; R2和R3各自表示氢或脂族酰基; X是羟基，卤素，烷氧基或式RaO-基团，其中Ra是脂族酰基; Y是式RbRcN-或RbRcN-O-的基团，其中Rb和Rc各自为氢或烷基; 和Z是氧或硫]具有优异的唾液酸酶抑制活性，因此可用于治疗和预防病毒复制对唾液酸酶抑制剂敏感的流行性感冒和其他病毒性疾病。
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公开(公告)号：US06340702B1
公开(公告)日：2002-01-22
申请号：US09301672
申请日：1999-04-28
IPC分类号： A01N4316
CPC分类号： C07D309/28
摘要： Compounds of formula (I) or their salts or esters: have excellent sialidase inhibitory activity and are therefore useful for the treatment and prevention of influenza and other viral diseases where the replication of the virus is susceptible to sialidase inhibitors.
摘要翻译： 式（I）化合物或其盐或酯：具有优异的唾液酸酶抑制活性，因此可用于治疗和预防病毒复制对唾液酸酶抑制剂敏感的流行性感冒和其他病毒性疾病。
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公开(公告)号：US08754112B2
公开(公告)日：2014-06-17
申请号：US13388218
申请日：2010-08-04
申请人： Shigeo Yamanoi , Hidenori Namiki , Takahiro Katagiri , Mayuko Akiu , Katsuji Kagechika , Takeshi Honda , Koji Matsumoto , Ryutaro Nakashima
发明人： Shigeo Yamanoi , Hidenori Namiki , Takahiro Katagiri , Mayuko Akiu , Katsuji Kagechika , Takeshi Honda , Koji Matsumoto , Ryutaro Nakashima
IPC分类号： A61K31/4245 , C07D271/06
CPC分类号： C07D271/06 , A61K31/4245 , A61K31/4439 , C07D413/12 , C07D413/14
摘要： Provided are a compound having an excellent hypoglycemic action, or a pharmaceutically acceptable salt thereof, and a pharmaceutical composition having an excellent therapeutic effect and/or prophylactic effect on type 1 diabetes, type 2 diabetes, and the like, which cause an increase in the blood sugar level due to abnormal sugar metabolism. A compound represented by general formula (I), or a pharmaceutically acceptable salt thereof, is disclosed.
摘要翻译： 提供具有优异的降血糖作用的化合物或其药学上可接受的盐，以及对1型糖尿病，2型糖尿病等具有优异的治疗效果和/或预防效果的药物组合物，其引起增加 血糖水平由于糖代谢异常。 公开了由通式（I）表示的化合物或其药学上可接受的盐。
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公开(公告)号：US08737119B2
公开(公告)日：2014-05-27
申请号：US13433895
申请日：2012-03-29
IPC分类号： G11C11/16
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 has a magnetization inversion region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30. The first magnetization fixed region 11 is connected with a first boundary B1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.
摘要翻译： 磁存储单元1设置有磁记录层10，磁记录层10是铁磁层，和通过非磁性层20与磁记录层10连接的钉扎层30.磁记录层10具有磁化反转区域13， 第一磁化固定区域11和第二磁化固定区域12.磁化反转区域13具有其取向可反转并与被钉扎层30重叠的磁化。第一磁化固定区域11与磁化反转中的第一边界B1连接 区域13和磁化取向在第一方向固定。 第二磁化固定区域12与磁化反转区域13中的第二边界B2连接，并且磁化取向固定在第二方向上。 第一方向和第二方向彼此相反。
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25.发明申请OPTICAL SCANNING DEVICE, IMAGE DISPLAY APPARATUS AND OPTICAL SCANNING METHOD 审中-公开光学扫描装置，图像显示装置和光学扫描方法公开(公告)号：US20140118809A1
公开(公告)日：2014-05-01
申请号：US14128512
申请日：2012-06-08
申请人： Takeshi Honda , Kenji Tagami , Nobuaki Takanashi
发明人： Takeshi Honda , Kenji Tagami , Nobuaki Takanashi
IPC分类号： G02B26/10
CPC分类号： G02B26/10 , G02B26/105
摘要： Provided is an optical scanning device capable of solving the problem of low driving efficiency. A pair of coupling parts 12 join both ends of movable mirror part 11 having a reflective plane that reflects light to respective supporting parts 13. Each coupling part 12 has magnet part 21 having a permanent magnet, first spring part 22 that couples magnet part 21 to supporting part 13 in an oscillatable manner, and a second spring part that couples movable mirror part 11 to magnet part 21 in an oscillatable manner. Driver 14 generates magnetic fields acting on magnet part 21 to oscillate magnetic part 21 and thereby oscillate movable mirror part 11.
摘要翻译： 提供了能够解决驾驶效率低的问题的光学扫描装置。 一对联接部件12将可反射镜部分11的两端连接成具有将光反射到相应的支撑部分13的反射平面。每个连接部分12具有具有永磁体的磁体部分21，将磁体部分21耦合到 支撑部件13以可振动的方式，以及第二弹簧部件，其以可振荡的方式将可动镜部件11耦合到磁体部件21。 驱动器14产生作用在磁体部分21上的磁场，以振荡磁性部分21，从而振动可动镜部分11。
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公开(公告)号：US08693238B2
公开(公告)日：2014-04-08
申请号：US12376925
申请日：2007-07-13
CPC分类号： G11C8/08 , G11C11/1659 , G11C11/1675
摘要： An MRAM of a spin transfer type is provided with a memory cell 10 and a word driver 30. The memory cell 10 has a magnetic resistance element 1 and a selection transistor TR having one of source/drain electrodes which is connected with one end of the magnetic resistance element 1. The word driver 30 drives a word line WL connected with a gate electrode of the selection transistor TR. The word driver 30 changes a drive voltage of the word line WL according to the write data DW to be written in the magnetic resistance element 1.
摘要翻译： 自旋转移型的MRAM具有存储单元10和字驱动器30.存储单元10具有磁阻元件1和选择晶体管TR，其具有与源极/漏极之一连接的源极/漏极之一 字驱动器30驱动与选择晶体管TR的栅电极连接的字线WL。 字驱动器30根据要写入磁阻元件1的写数据DW改变字线WL的驱动电压。
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27.发明授权Operation method of MRAM including correcting data for single-bit error and multi-bit error 有权MRAM的操作方法包括纠正单位错误和多位错误的数据公开(公告)号：US08281221B2
公开(公告)日：2012-10-02
申请号：US12083373
申请日：2006-10-17
IPC分类号： G06F11/00
CPC分类号： G11C11/16 , G06F11/1044 , G06F11/1076 , G11C11/1653 , G11C11/1673 , G11C11/1675 , G11C2029/0411 , G11C2211/5641
摘要： An operation method of a MRAM of the present invention stores in memory arrays, error correction codes, each of which comprises of symbols, each of which comprises bits, and to which an error correction is possible in units of symbols. In the operation method, the symbols are read by using the reference cells different from each other. Moreover, when a correctable error is detected in a read data of the error correction code from data cells corresponding to an input address, (A) a data in the data cell corresponding to an error bit is corrected, for a first error symbol as an error pattern of one bit, and (B) a data in the reference cell that is used to read a second error symbol is corrected for a second error symbol as en error pattern of the bits.
摘要翻译： 本发明的MRAM的操作方法存储在存储器阵列中，每个都包括符号，每个符号包括位，并且可以以符号为单位进行纠错。 在操作方法中，通过使用彼此不同的参考单元来读取符号。 此外，当在对应于输入地址的数据单元的错误校正码的读取数据中检测到可校正错误时，（A）对与错误位对应的数据单元中的数据进行校正，对于第一错误符号，作为 一个比特的错误模式和（B）用于读取第二错误符号的参考小区中的数据被校正为第二个错误符号作为比特的错误模式。
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公开(公告)号：US20090161423A1
公开(公告)日：2009-06-25
申请号：US12066926
申请日：2006-09-07
IPC分类号： G11C11/14 , G11C11/416
CPC分类号： B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , G11C11/1693
摘要： An MRAM having a first cell array group (2-0) and a second cell array group (2-1) containing a plurality of cell arrays (21) is used. Each of the first cell array group (2-0) and the second cell array group (2-1) includes a first current source unit for supplying a first write current IWBL to a bit line WBL of the cell array (21) and a first current waveform shaping unit having a first capacitor requiring precharge and shaping the waveform of the first write current IWBL. When the cell array (21) performs write into a magnetic memory (24), the first current waveform shaping unit of the first cell array group (2-0) and the first current waveform shaping unit of the second cell array group (2-1) charges and discharges electric charge accumulated in the first capacitor to wiring toward the bit line WBL at different periods from each other.
摘要翻译： 使用具有包含多个单元阵列（21）的第一单元阵列组（2-0）和第二单元阵列组（2-1）的MRAM。 第一单元阵列组（2-0）和第二单元阵列组（2-1）中的每一个包括用于将第一写入电流IWBL提供给单元阵列（21）的位线WBL的第一电流源单元和 第一电流波形整形单元，其具有需要预充电的第一电容器并且对第一写入电流IWBL的波形进行整形。 当单元阵列（21）对磁存储器（24）进行写入时，第一单元阵列组（2-0）的第一电流波形整形单元和第二单元阵列组（2- 1）对在第一电容器中累积的电荷进行充电和放电，以不同的周期向位线WBL布线。
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公开(公告)号：US07472847B2
公开(公告)日：2009-01-06
申请号：US10736544
申请日：2003-12-17
申请人： Hiroshi Mukai , Keiichi Honma , Takeshi Honda , Tetsuo Kimiya
发明人： Hiroshi Mukai , Keiichi Honma , Takeshi Honda , Tetsuo Kimiya
IPC分类号： B05B1/08
CPC分类号： B05B1/005 , B05B1/08 , Y10S239/03 , Y10T137/2104 , Y10T137/2185
摘要： For achieving a fluidic device, being able to be made small in sizes, comprising a fluid inflow opening 1, a connector duct 2, and a fluid jet nozzle, wherein the connector duct 2 is constructed with curves, and is further constructed with two (2) pieces of flow passages, being symmetric on both sides. Constructing the connector duct with the curves reduces resistance of fluid within the duct, and further dividing the connector duct into two (2) parts in both side enhances the flows at confluent point in the duct (increase of the flow velocity).
摘要翻译： 为了实现能够制造尺寸较小的流体装置，包括流体流入开口1，连接器管道2和流体喷射喷嘴，其中连接器管道2构成曲线，并且进一步构造为具有两个 2）流动通道，两侧对称。 用曲线构造连接器导管可以降低管道内流体的阻力，并进一步将连接管道分成两侧（2）部分，以增加管道汇流点的流量（增加流速）。
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公开(公告)号：US07453719B2
公开(公告)日：2008-11-18
申请号：US10553998
申请日：2004-04-13
IPC分类号： G11C11/15
CPC分类号： G11C11/15 , G11C11/1673
摘要： An MRAM has a plurality of bit lines, a reference bit line, a plurality of memory cells and reference cells and a read section. The memory cells are provided along the bit lines and the reference cells along the reference bit line. The memory cell and reference cell have a tunneling magnetic resistance and a reference tunneling magnetic resistance, each of which has a spontaneous magnetization whose direction is reversed in accordance with data stored therein. The read section has a first resistance section which contains a ninth terminal connected with a bit line and a tenth terminal connected with the first power supply, a second resistance section which contains an eleventh terminal connected with the reference bit line and a twelfth terminal connected with the first power supply, and a comparing section which compares a sense voltage on the ninth terminal and a reference voltage of the eleventh terminal.
摘要翻译： MRAM具有多个位线，参考位线，多个存储单元和参考单元以及读取部分。 沿着位线和参考单元沿着参考位线提供存储单元。 存储单元和参考单元具有隧道磁阻和参考隧道磁阻，每个具有根据存储在其中的数据方向反转的自发磁化。 读取部分具有包含与位线连接的第九端子和与第一电源连接的第十端子的第一电阻部分，包含与参考位线连接的第十一端子的第二电阻部分和与参考位线连接的第十二端子 第一电源以及比较第九端子的感测电压与第十一端子的基准电压的比较部。
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