公开(公告)号：US20120257850A1

公开(公告)日：2012-10-11

申请号：US13395329

申请日：2010-06-08

Applicant: Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

Inventor： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

IPC: G02F1/035

CPC classification number: G02F1/2257 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/066 ,  G02F2201/07 ,  G02F2202/105

Abstract: A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.

Abstract translation: 提供了一种小型化的低功率电光调制器，其实现了减少调制部分中的附加电阻和由电极同时引起的光损耗。 电光调制器包括通过电介质膜层叠具有与第一半导体层8上的第一半导体层8不同的导电类型的第二半导体层9形成的肋波导，并且半导体层8和9可连接到 分别经由高掺杂部分4和10的外部端子。 在具有电介质膜11的半导体层8和9的接触表面附近的区域中，通过来自外部端子的电信号累积，去除或反转自由载流子，并且由此使自由载流子的浓度 调制光信号的电场区域，使得可以调制光信号的相位。 半导体层8和9中的至少一个比层叠部分宽。 高度掺杂部分4和10中的至少一个形成在堆叠部分的外部。

公开(公告)号：US08269303B2

公开(公告)日：2012-09-18

申请号：US12919638

申请日：2009-03-09

Applicant: Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

Inventor： Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

IPC: H01L31/105

CPC classification number: H01L31/105 ,  G02B6/12004 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03529 ,  Y02E10/547

Abstract: The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith.

Abstract translation: Ge层与Si层之间的晶格失配大至4％左右。 因此，当Ge层在Si层上生长时，引入穿透位错以在p-i-n结处引起漏电流。 因此，光检测灵敏度降低，并且元件的可靠性也降低。 此外，在与Si波导的连接中，还存在由于Si和Ge之间的折射率的差异以及由金属电极引起的吸收损耗的反射损耗的问题。 为了解决所述问题，根据本发明，提供了一种垂直型pin-SiGe光电二极管，其具有嵌入到形成在Si层的一部分中的凹槽中的结构，其中p型或n- 在沟槽的下部形成有型掺杂层，其中在通过层叠i-Si层和SiGe缓冲层而形成的层叠结构上形成具有矩形或倒锥形的i-SiGe层 凹槽的下部和侧壁。 此外，在具有Si波导的光学连接部中，通过由i-Si层和SiGe缓冲层构成的层叠结构实现阻抗匹配，并且将上部金属层与其分离，使得多Si桥结构 用于将上部金属层电连接到其上。

公开(公告)号：US07715665B2

公开(公告)日：2010-05-11

申请号：US12032392

申请日：2008-02-15

Applicant: Jun Ushida ,  Hirohito Yamada

Inventor： Jun Ushida ,  Hirohito Yamada

IPC: G02B6/12 ,  G02B6/00 ,  G02B6/26 ,  G02B6/28 ,  G02B6/30 ,  G02B6/02 ,  G02B6/10 ,  G02B1/10 ,  G02F1/00 ,  H01S3/00

CPC classification number: G02F1/365 ,  G02F1/3515 ,  G02F2202/32

Abstract: In an optical circuit including multi-dimensional photonic crystals, in which the optical circuit has a structure (33), such as a light emitting member or a light receiving member, having a natural resonance frequency, another structure (34) having a natural resonance frequency slightly differing from the natural resonance frequency of the structure (33) is arranged in the vicinity of the structure (33) to control the directivity of localization and propagation of an electromagnetic field, light emission and light reception in a spatial region including the above structures in the multi-dimensional photonic crystals, in order to permit functional operations to be realized.

Abstract translation: 在包括多维光子晶体的光电路中，其中光电路具有具有天然共振频率的诸如发光部件或光接收部件的结构（33），具有天然共振的另一结构（34） 与结构（33）的固有谐振频率稍微不同的频率被布置在结构（33）附近，以控制在包括上述的空间区域中的电磁场，发光和光接收的定位和传播的方向性 多维光子晶体中的结构，以便实现功能操作。

公开(公告)号：US09274280B2

公开(公告)日：2016-03-01

申请号：US14119746

申请日：2012-05-10

Applicant: Jun Ushida ,  Shigeru Nakamura ,  Shigeki Takahashi

Inventor： Jun Ushida ,  Shigeru Nakamura ,  Shigeki Takahashi

IPC: G02B6/10 ,  G02B6/24 ,  G02B6/12

CPC classification number: G02B6/243 ,  G02B6/12 ,  G02B2006/12126

Abstract: An optical waveguide type optical terminator forms an optical waveguide structure including at least an optical absorption core (103) which is formed on a clad layer (102) and includes a portion composed of silicon in which an impurity of 1019 cm−3 or more is doped, and is used by being optically connected in series with an optical waveguide including a core (105) composed of silicon. The optical absorption core (103) is sufficient provided that, at least, an impurity of around 1019 cm−3 is doped therein. For example, its impurity concentration is sufficient provided that it falls within a range of 1019-1020 cm−3. The existence of this impurity causes absorption of light in the optical absorption core (103).

Abstract translation: 光波导型光学终端器形成至少包括形成在包层（102）上的光吸收芯（103）的光波导结构，其包括由1019cm-3以上的杂质为硅的硅构成的部分 并且通过与包括由硅构成的芯（105）的光波导光学连接而被使用。 光吸收芯（103）足够，只要至少掺杂约1019cm-3的杂质即可。 例如，其杂质浓度足以在1019-1020cm-3的范围内。 这种杂质的存在导致光吸收芯（103）中的光的吸收。

公开(公告)号：US09020312B2

公开(公告)日：2015-04-28

申请号：US13378352

申请日：2010-04-14

Applicant: Jun Ushida ,  Junichi Fujikata

Inventor： Jun Ushida ,  Junichi Fujikata

IPC: G02B6/42 ,  G02B6/12 ,  G02B6/122 ,  G02F1/025 ,  G02F1/225

CPC classification number: G02B6/12004 ,  G02B6/122 ,  G02B2006/12097 ,  G02B2006/12195 ,  G02F1/025 ,  G02F1/2257 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/104 ,  Y10T29/49826

Abstract: Provided is a connecting channel that has manufacturing tolerance, can suppress light loses, improves reliability of the connecting channel, and connects an optical device and an optical waveguide. The connecting channel includes first silicon layer (3) that has rib-shaped part (3′) extending in a longitudinal direction of the connecting channel, and second silicon layer (6) that is stacked on first silicon layer (3) to partially overlap rib-shaped part 3′, and extends in the longitudinal direction. Second silicon layer (6) has tapered part (W) tapered toward one end in the longitudinal direction, and is located away from an upper portion of rib-shaped part (3′) at an end surface of one end in the longitudinal direction.

Abstract translation: 提供具有制造公差的连接通道，可以抑制光损失，提高连接通道的可靠性，并且连接光学装置和光波导。 连接通道包括：第一硅层（3），其具有在连接通道的纵向方向上延伸的肋状部分（3'），以及第二硅层（6），其堆叠在第一硅层（3）上以部分重叠 肋状部3'，并且在纵向方向上延伸。 第二硅层（6）具有沿长度方向的一端逐渐变细的锥形部（W），并且在长度方向的一端的端面处远离肋状部（3'）的上部。

公开(公告)号：US08913860B2

公开(公告)日：2014-12-16

申请号：US13823027

申请日：2011-09-21

Applicant: Jun Ushida ,  Shigeru Nakamura

Inventor： Jun Ushida ,  Shigeru Nakamura

IPC: G02B6/26 ,  G02B6/10 ,  G02B6/30 ,  G02B6/122

CPC classification number: G02B6/26 ,  G02B6/1228 ,  G02B6/305

Abstract: The present invention provides a small optical waveguide structure capable of converting the spot size of light, and capable of reducing the conversion loss when compared under the condition of the same waveguide length and performing an optical conversion with high efficiency. An optical waveguide structure (100) includes a base waveguide (110) including a taper section (111) whose width becomes continuously narrower from one side toward another side, and a narrow-width section (112) that is consecutively connected to a narrow-width side of the taper section (111) and extends toward the another side. In the optical waveguide structure (100), at least three-layered upper waveguides (121 to 123) each of which has a planar shape smaller than the taper section (111) and includes a planar-view-roughly-wedge-shaped section whose width becomes continuously narrower from the one side toward the another side at least on a tip side are stacked above the taper section (111) of the base waveguide (110) in such a manner that the planar shape becomes successively smaller from the base waveguide side (110).

Abstract translation: 本发明提供了一种能够转换光斑尺寸的小型光波导结构，并且在相同波导长度的条件下进行比较并能够以高效率进行光转换时，能够降低转换损耗。 光波导结构（100）包括：基底波导（110），其包括宽度从一侧朝向另一侧连续变窄的锥形部（111），以及窄宽度部（112），其连续地连接到狭窄部 锥形部分（111）的宽度侧并且朝向另一侧延伸。 在光波导结构（100）中，至少三层上波导（121〜123）具有比锥形部（111）小的平面形状，并且具有俯视大致楔形的截面， 宽度从一侧朝向另一侧连续变窄，至少在前端侧以基板波导（110）的锥形部（111）的上方层叠，使得平面形状从基底波导侧连续变小 （110）。

公开(公告)号：US08532440B2

公开(公告)日：2013-09-10

申请号：US13036244

申请日：2011-02-28

Applicant: Jun Ushida ,  Junichi Fujikata ,  Ming-Bin Yu ,  Liang Ding ,  ShiYang Zhu

Inventor： Jun Ushida ,  Junichi Fujikata ,  Ming-Bin Yu ,  Liang Ding ,  ShiYang Zhu

IPC: G02F1/025 ,  G02F1/035

CPC classification number: G02F1/025 ,  G02F2201/066 ,  G02F2201/12 ,  G02F2202/06 ,  G02F2202/105

Abstract: In an electro-optic device, a stack structure including a first silicon layer of a first conductivity type and a second silicon layer of a second conductivity type has a rib waveguide shape so as to form an optical confinement area, and a slab portion of a rib waveguide includes an area to which a metal electrode is connected. The slab portion in the area to which the metal electrode is connected is thicker than a surrounding slab portion. The area to which the metal electrode is connected is set so that a range of a distance from the rib waveguide to the area to which the metal electrode is connected is such that when the distance is changed, an effective refractive index of the rib waveguide in a zeroth-order mode does not change.

Abstract translation: 在电光装置中，包括第一导电类型的第一硅层和第二导电类型的第二硅层的堆叠结构具有肋波导形状以形成光限制区域，并且将板状部分 肋波导包括连接金属电极的区域。 金属电极连接的区域中的板坯部分比周围的板坯部分厚。 金属电极连接的区域被设定为使得从肋波导到连接金属电极的区域的距离的范围使得当距离变化时，肋波导的有效折射率在 零阶模式不会改变。

公开(公告)号：US20120134633A1

公开(公告)日：2012-05-31

申请号：US13378352

申请日：2010-04-14

Applicant: Jun Ushida ,  Junichi Fujikata

Inventor： Jun Ushida ,  Junichi Fujikata

IPC: G02B6/122 ,  B23P11/00

CPC classification number: G02B6/12004 ,  G02B6/122 ,  G02B2006/12097 ,  G02B2006/12195 ,  G02F1/025 ,  G02F1/2257 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/104 ,  Y10T29/49826

Abstract: Provided is a connecting channel that has manufacturing tolerance, can suppress light loses, improves reliability of the connecting channel, and connects an optical device and an optical waveguide. The connecting channel includes first silicon layer (3) that has rib-shaped part (3′) extending in a longitudinal direction of the connecting channel, and second silicon layer (6) that is stacked on first silicon layer (3) to partially overlap rib-shaped part 3′, and extends in the longitudinal direction. Second silicon layer (6) has tapered part (W) tapered toward one end in the longitudinal direction, and is located away from an upper portion of rib-shaped part (3′) at an end surface of one end in the longitudinal direction.

Abstract translation: 提供具有制造公差的连接通道，可以抑制光损失，提高连接通道的可靠性，并且连接光学装置和光波导。 连接通道包括：第一硅层（3），其具有在连接通道的纵向方向上延伸的肋状部分（3'），以及第二硅层（6），其堆叠在第一硅层（3）上以部分重叠 肋状部3'，并且在纵向方向上延伸。 第二硅层（6）具有沿长度方向的一端逐渐变细的锥形部（W），并且在长度方向的一端的端面处远离肋状部（3'）的上部。

公开(公告)号：US20120003767A1

公开(公告)日：2012-01-05

申请号：US13256087

申请日：2010-02-15

Applicant: Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

Inventor： Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

IPC: G02F1/025 ,  H01L33/00

CPC classification number: G02F1/025 ,  G02F1/2257

Abstract: An optical modulator according to the present invention is configured at least by a semiconductor layer subjected to a doping process so as to exhibit a first conductivity type, and a semiconductor layer subjected to a doping process so as to exhibit a second conductivity type. Further, in the optical modulator, at least the first conductivity type semiconductor layer, a dielectric layer, the second conductivity type semiconductor layer, and a transparent electrode optically transparent in at least a near-infrared wavelength region are laminated in order.

Abstract translation: 根据本发明的光调制器至少由经受掺杂工艺的半导体层构成以呈现第一导电类型，以及经受掺杂工艺以显示第二导电类型的半导体层。 此外，在光调制器中，依次层叠至少第一导电型半导体层，电介质层，第二导电型半导体层和在至少近红外波长区域中透光的透明电极。

公开(公告)号：US20110176762A1

公开(公告)日：2011-07-21

申请号：US13120625

申请日：2009-11-10

Applicant: Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

Inventor： Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

IPC: G02F1/025 ,  B05D5/12

CPC classification number: G02F1/025 ,  G02F2001/0152

Abstract: An optical modulator is formed with at least a portion of a semiconductor layer (8) that has undergone a doping process to exhibit a first conductivity and at least a portion of a semiconductor layer (9) that has undergone a doping process to exhibit a second conductivity overlapping with a dielectric layer (11) interposed. The surface of the semiconductor layer (8) of first conductivity has an uneven form in the portion in which the semiconductor layer (8) that exhibits first conductivity and the semiconductor layer (9) that exhibits second conductivity overlap with the dielectric layer (11) interposed. The dielectric layer (11) is formed on the semiconductor layer (8) of first conductivity that has the uneven form, and the semiconductor layer (9) of second conductivity is formed on the dielectric layer (11).

Abstract translation: 光调制器形成有至少部分已经经历掺杂工艺以显示第一导电性的半导体层（8）的至少一部分，以及已经经历掺杂工艺的半导体层（9）的至少一部分以显示第二导电性 导电性与介电层（11）重叠。 在具有第一导电性的半导体层（8）和表现出第二导电性的半导体层（9）与电介质层（11）重叠的部分中，第一导电性半导体层（8）的表面具有凹凸形状， 插入。 电介质层（11）形成在具有不平坦形状的第一导电性半导体层（8）上，并且在电介质层（11）上形成第二导电性半导体层（9）。