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公开(公告)号：US20120073651A1
公开(公告)日：2012-03-29
申请号：US13228754
申请日：2011-09-09
申请人： Akira Fujimoto , Eishi Tsutsumi , Tsutomu Nakanishi , Kumi Masunaga , Kenji Nakamura , Koji Asakawa
发明人： Akira Fujimoto , Eishi Tsutsumi , Tsutomu Nakanishi , Kumi Masunaga , Kenji Nakamura , Koji Asakawa
IPC分类号： H01L31/0368 , H01L31/02
CPC分类号： H01L31/0236 , H01L31/02168 , H01L31/02363 , H01L31/0543 , H01L31/055 , H01L31/068 , H01L31/073 , Y02E10/52 , Y02E10/543 , Y02E10/547
摘要： A photoelectric conversion element according to an embodiments includes: a first metal layer; a semiconductor layer formed on the first metal layer; a second metal layer formed on the semiconductor layer, the second metal layer comprising a porous thin film with a plurality of openings each having a mean area not smaller than 80 nm2 and not larger than 0.8 μm2 or miniature structures having a mean volume not smaller than 4 nm3 and not larger than 0.52 μm3; and a wavelength converting layer formed between the semiconductor layer and the second metal layer, at least a refractive index of a portion of the wavelength converting layer being lower than a refractive index of a material of the semiconductor layer, the portion being at a distance of 5 nm or shorter from an end portion of the second metal layer.
摘要翻译： 根据实施例的光电转换元件包括：第一金属层; 形成在所述第一金属层上的半导体层; 形成在所述半导体层上的第二金属层，所述第二金属层包括具有多个开口的多孔薄膜，每个开口的平均面积不小于80nm 2且不大于0.8μm2，或平均体积不小于 4nm3且不大于0.52μm3; 以及形成在所述半导体层和所述第二金属层之间的波长转换层，所述波长转换层的一部分的折射率的至少折射率低于所述半导体层的材料的折射率，所述部分距离 距第二金属层的端部为5nm以下。
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公开(公告)号：US08993869B2
公开(公告)日：2015-03-31
申请号：US13422728
申请日：2012-03-16
IPC分类号： H01L31/0232 , H01L31/0224 , H01L31/0216 , H01L31/0288
CPC分类号： H01L31/022425 , H01L31/02168 , H01L31/0288 , Y02E10/50
摘要： A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.
摘要翻译： 光电转换元件包括光电转换层，其包括第一金属层，半导体层和第二金属层，所有这些都被层压。 此外，第一金属层和第二金属层中的至少一个是具有多个通孔的纳米网状金属或具有在半导体层上彼此分开设置的多个金属点的点状金属。 光电转换层包括含有杂质的长波长吸收层，该杂质与p型掺杂和半导体层的n型掺杂不同。 长波长吸收层距离纳米网状金属或点状金属为5nm以下。
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公开(公告)号：US20120247552A1
公开(公告)日：2012-10-04
申请号：US13422728
申请日：2012-03-16
IPC分类号： H01L31/0224 , H01L31/036 , H01L31/0312 , H01L31/0376 , H01L31/0296 , H01L31/0304 , H01L31/0264 , H01L31/0368
CPC分类号： H01L31/022425 , H01L31/02168 , H01L31/0288 , Y02E10/50
摘要： A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.
摘要翻译： 光电转换元件包括光电转换层，其包括第一金属层，半导体层和第二金属层，所有这些都被层压。 此外，第一金属层和第二金属层中的至少一个是具有多个通孔的纳米网状金属或具有在半导体层上彼此分开设置的多个金属点的点状金属。 光电转换层包括含有杂质的长波长吸收层，该杂质与p型掺杂和半导体层的n型掺杂不同。 长波长吸收层距离纳米网状金属或点状金属为5nm以下。
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24.发明授权Displaying device and lighting device employing organic electroluminescence element 有权使用有机电致发光元件的显示装置和照明装置公开(公告)号：US07928353B2
公开(公告)日：2011-04-19
申请号：US12392691
申请日：2009-02-25
IPC分类号： H01J1/46
CPC分类号： H01L51/5203 , H01L51/5234 , H01L2251/5315
摘要： The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.
摘要翻译： 本发明提供一种高效率的有机EL显示器和照明装置。 有机EL显示器包括基板，像素驱动电路单元和在基板上以矩阵形式布置的像素。 像素包括发光部分，并且发光部分由放置在基板附近的第一电极，远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。 第二电极具有厚度为10nm至200nm的金属电极层，并且金属电极层包括金属部分和贯穿该层的多个开口。 金属部件是无缝的，并且由连续连接的金属形成，其中任何点之间没有断裂。 开口的平均开口直径为10nm〜780nm，并且周期性地布置，使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。
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公开(公告)号：US08450768B2
公开(公告)日：2013-05-28
申请号：US13335984
申请日：2011-12-23
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2933/0091
摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％或更多的金属部分在直线上不间断地继续直线而不断裂，直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。
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公开(公告)号：US08101964B2
公开(公告)日：2012-01-24
申请号：US12363198
申请日：2009-01-30
IPC分类号： H01L30/00
CPC分类号： H01L33/38 , H01L2933/0091
摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续连接而不断裂，并且整个区域的95％或更多的金属部分线性地继续而不断开，直线距离不大于 从有源层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。
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公开(公告)号：US20090242925A1
公开(公告)日：2009-10-01
申请号：US12363198
申请日：2009-01-30
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2933/0091
摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％以上的金属部分直线地继续而不断开，直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。
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公开(公告)号：US20120091499A1
公开(公告)日：2012-04-19
申请号：US13335984
申请日：2011-12-23
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L2933/0091
摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续连接而不断裂，并且整个区域的95％或更多的金属部分线性地继续而不断开，直线距离不大于 从有源层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。
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29.发明申请SOLAR CELL AND METHOD FOR MANUFACTURING METAL ELECTRODE LAYER TO BE USED IN THE SOLAR CELL 审中-公开用于制造在太阳能电池中使用的金属电极层的太阳能电池和方法公开(公告)号：US20100175749A1
公开(公告)日：2010-07-15
申请号：US12441036
申请日：2009-01-29
申请人： Eishi Tsutsumi , Tsutomu Nakanishi , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Satoshi Mikoshiba
发明人： Eishi Tsutsumi , Tsutomu Nakanishi , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Satoshi Mikoshiba
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022433 , H01L31/03682 , H01L31/03762 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes: a first electrode layer formed on a substrate; a generating layer formed on the first electrode layer; and a second electrode layer formed on the generating layer, at least one of the first electrode layer and the second electrode layer being a metal electrode layer having optical transparency, the metal electrode layer having a plurality of openings that penetrate through the metal electrode layer. The metal electrode layer includes metal parts, any two metal parts of the metal electrode layer continues to each other without a cut portion, the metal electrode layer has a film thickness in the range of 10 nm to 200 nm, and sizes of the openings are equal to or smaller than ½ of the wavelength of light to be used for generating electricity.
摘要翻译： 太阳能电池包括：形成在基板上的第一电极层; 形成在所述第一电极层上的发生层; 以及形成在所述发生层上的第二电极层，所述第一电极层和所述第二电极层中的至少一个是具有透光性的金属电极层，所述金属电极层具有贯穿所述金属电极层的多个开口。 金属电极层包括金属部件，金属电极层的任意两个金属部分彼此连续而没有切割部分，金属电极层的膜厚度在10nm至200nm范围内，并且开口尺寸为 等于或小于用于发电的光的波长的1/2。
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30.发明申请DISPLAYING DEVICE AND LIGHTING DEVICE EMPLOYING ORGANIC ELECTROLUMINESCENCE ELEMENT 有权显示设备和照明设备使用有机电致发光元件公开(公告)号：US20090236962A1
公开(公告)日：2009-09-24
申请号：US12392691
申请日：2009-02-25
CPC分类号： H01L51/5203 , H01L51/5234 , H01L2251/5315
摘要： The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.
摘要翻译： 本发明提供一种高效率的有机EL显示器和照明装置。 有机EL显示器包括基板，像素驱动电路单元和在基板上以矩阵形式布置的像素。 像素包括发光部分，并且发光部分由放置在基板附近的第一电极，远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。 第二电极具有厚度为10nm至200nm的金属电极层，并且金属电极层包括金属部分和贯穿该层的多个开口。 金属部件是无缝的，并且由连续连接的金属形成，其中任何点之间没有断裂。 开口的平均开口直径为10nm〜780nm，并且周期性地布置，使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。
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