公开(公告)号：US08512540B2

公开(公告)日：2013-08-20

申请号：US13044222

申请日：2011-03-09

申请人： Akira Furuya ,  Yasuaki Tsuchiya

发明人： Akira Furuya ,  Yasuaki Tsuchiya

IPC分类号： C25D5/00 ,  C25D21/12

CPC分类号： C25D5/00 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76849 ,  H01L21/76877

摘要： An objective of this invention is to reliably form a plating film. The following two steps are sequentially conducted: a first step of connecting a film-formation surface of a wafer 109 to a cathode electrode 107, making the film-formation surface inclined from the surface of a plating solution 103 and immersing the wafer 109 into the plating solution 103 with applying a first current between the cathode electrode 107 and an Cu anode electrode 105 disposed in the plating solution 103, and second step of, after immersing the film-formation surface in the plating solution 103, applying a second current between the cathode electrode 107 and the Cu anode electrode 105 to form a metal film on the film-formation surface by electrolytic plating. In the first step, the first current is controlled on the basis of an inclination angle between the liquid surface and the film-formation surface.

摘要翻译： 本发明的目的是可靠地形成镀膜。 顺序进行以下两个步骤：将晶片109的成膜表面连接到阴极电极107的第一步骤，使得成膜表面从电镀液103的表面倾斜并将晶片109浸入 电镀液103，在阴极电极107和布置在电镀液103中的Cu阳极电极105之间施加第一电流，第二工序在将成膜面浸渍在电镀液103中之后，在第 阴极电极107和Cu阳极电极105，通过电解电镀在成膜面上形成金属膜。 在第一步骤中，基于液体表面和成膜表面之间的倾斜角来控制第一电流。

公开(公告)号：US08477474B2

公开(公告)日：2013-07-02

申请号：US12717643

申请日：2010-03-04

申请人： Toshiyuki Yoshizawa ,  Akira Furuya ,  Masaomi Ishikura ,  Keisuke Takasugi ,  Hiroshi Take

发明人： Toshiyuki Yoshizawa ,  Akira Furuya ,  Masaomi Ishikura ,  Keisuke Takasugi ,  Hiroshi Take

IPC分类号： H01G4/00 ,  H01G4/005

CPC分类号： H01G4/33 ,  H01G4/228 ,  H01L23/3142 ,  H01L23/3157 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： To provide a thin film capacitor having a device structure for suppressing peeling between an insulating film and a substrate. A thin film capacitor 100 has a laminate structure that is formed by laminating a lower electrode 20, a dielectric film 30, and an upper electrode 40 in sequence on a substrate 10. An adhesion layer 41 is formed on a side surface of the lower electrode 20 via the dielectric film 30, and an insulating film 50 in contact with the adhesion layer 41 covers the laminate structure. According to this device structure, the adhesion layer 41 having excellent adhesiveness to the insulating film 50 is disposed between the insulating film 50 and the dielectric film 30, so that peeling of the insulating film 50 can be suppressed.

摘要翻译： 提供具有抑制绝缘膜和基板之间剥离的器件结构的薄膜电容器。 薄膜电容器100具有依次在基板10上层叠下电极20，电介质膜30和上电极40而形成的层叠结构。在下电极的侧面形成有粘接层41 并且与粘合层41接触的绝缘膜50覆盖层叠结构。 根据该器件结构，在绝缘膜50和电介质膜30之间设置与绝缘膜50具有优异粘合性的粘合层41，从而能够抑制绝缘膜50的剥离。

公开(公告)号：US08222142B2

公开(公告)日：2012-07-17

申请号：US12898165

申请日：2010-10-05

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： H01L21/44

CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A generation of a void in a recessed section is inhibited. A method for manufacturing a semiconductor device includes: an operation of forming recessed sections in an insulating film, which is formed on a semiconductor substrate; an operation of forming a seed film in the recessed section; an operation of forming a cover metal film in the recessed section; an operation of selectively removing the cover metal film to expose the seed film over the bottom section of the recessed section; and an operation to carrying out a growth of a plated film to fill the recessed section by utilizing the seed film exposed in the bottom section of the recessed section as a seed.

摘要翻译： 凹陷部分中的空隙的产生被抑制。 一种制造半导体器件的方法包括：形成在半导体衬底上的绝缘膜中形成凹部的操作; 在凹部中形成种子膜的操作; 在凹部中形成覆盖金属膜的动作; 选择性地去除覆盖金属膜以将种子膜暴露在凹部的底部上的操作; 以及通过利用暴露在凹部的底部中的种子膜作为种子来进行镀膜的生长以填充凹部的操作。

公开(公告)号：US07745240B2

公开(公告)日：2010-06-29

申请号：US11826085

申请日：2007-07-12

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  H01L33/20 ,  H01L33/22

摘要： A manufacturing method of a light-emitting element includes emitting a laser light to a division region for separating a light-emitting element formed on a substrate, physically dividing the substrate along the division region, and removing a surface layer on at least one of the side faces of the substrate that is exposed by the dividing of the substrate.

摘要翻译： 发光元件的制造方法包括将激光发射到用于分离形成在基板上的发光元件的分割区域，沿着分割区域物理地分割基板，以及去除至少一个 通过基板的分割曝光的基板的侧面。

公开(公告)号：US07675136B2

公开(公告)日：2010-03-09

申请号：US11723925

申请日：2007-03-22

申请人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

发明人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

IPC分类号： H01L29/00

CPC分类号： H01L27/016

摘要： A thin-film device incorporates a device main body and four terminal electrodes. The device main body has four side surfaces. The terminal electrodes are disposed to touch respective portions of the side surfaces. The device main body includes a lower conductor layer used to form a first passive element and an upper conductor layer used to form a second passive element. At each side surface of the device main body, an end face of the lower conductor layer and an end face of the upper conductor layer are electrically and physically connected to each other. The terminal electrodes touch the end faces of the lower and upper conductor layers, and are thereby connected to the lower and upper conductor layers.

摘要翻译： 薄膜器件包括器件主体和四个端子电极。 装置主体具有四个侧面。 端子电极被设置成接触侧表面的相应部分。 器件主体包括用于形成第一无源元件的下导体层和用于形成第二无源元件的上导体层。 在器件主体的每个侧表面处，下导体层的端面和上导体层的端面彼此电气和物理地连接。 端子电极接触下导体层和上导体层的端面，从而连接到下导体层和上导体层。

公开(公告)号：US20090244809A1

公开(公告)日：2009-10-01

申请号：US12457296

申请日：2009-06-05

申请人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

发明人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

IPC分类号： H01G4/06 ,  H01G7/00

CPC分类号： H01G4/33 ,  H01G4/01 ,  H05K1/162 ,  H05K3/244 ,  H05K2201/0179 ,  H05K2201/0347 ,  Y10T29/435

摘要： A thin-film device includes a substrate, and a capacitor provided on the substrate. The capacitor incorporates a lower conductor layer having a top surface and a side surface; a flattening film disposed to cover the top and side surfaces of the lower conductor layer; a dielectric film disposed on the flattening film; and an upper conductor layer disposed on the dielectric film. The lower conductor layer is composed of an electrode film and a plating film disposed on the electrode film. The dielectric film has a thickness that falls within a range of 0.02 to 1 μm inclusive and that is smaller than a thickness of the lower conductor layer. A surface roughness in maximum height of a top surface of the flattening film is smaller than that of the top surface of the lower conductor layer and equal to or smaller than the thickness of the dielectric film.

摘要翻译： 薄膜器件包括衬底和设置在衬底上的电容器。 电容器包括具有顶表面和侧表面的下导体层; 布置成覆盖下导体层的顶表面和侧表面的平坦化膜; 设置在平坦化膜上的电介质膜; 以及设置在电介质膜上的上导体层。 下导体层由设置在电极膜上的电极膜和镀膜构成。 电介质膜的厚度为0.02〜1μm的范围，小于下导体层的厚度。 平坦化膜的上表面的最大高度的表面粗糙度小于下导体层的上表面的表面粗糙度，并且等于或小于电介质膜的厚度。

公开(公告)号：US20090242409A1

公开(公告)日：2009-10-01

申请号：US12414215

申请日：2009-03-30

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： C25D21/12

CPC分类号： C25D21/12 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76877

摘要： A plating film is formed by the steps of applying a direct current between a cathode and an anode (S10); superimposing an alternating current component on the direct current between the cathode and the anode and detecting a displacement current flowing between the cathode and the anode (S12 to S16); calculating a variation of a surface area of the plating film based on the displacement current (S18 and S20); and controlling the value of the direct current based on the variation of the surface area of the plating film so that the local area current density for the surface area does not change (S22 and S24). Consequently favorable film properties are provided to the plating film.

摘要翻译： 通过在阴极和阳极之间施加直流电流的步骤形成电镀膜（S10）; 在阴极和阳极之间的直流上叠加交流分量并检测在阴极和阳极之间流动的位移电流（S12至S16）; 基于位移电流计算电镀膜的表面积的变化（S18和S20）; 并且基于镀膜的表面积的变化来控制直流电流的值，使得表面积的局部区域电流密度不变（S22和S24）。 因此，向镀膜提供有利的膜性质。

公开(公告)号：US07426914B2

公开(公告)日：2008-09-23

申请号：US11730047

申请日：2007-03-29

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： F02B75/22

CPC分类号： F02F7/0021

摘要： A crankcase of an engine having a crankshaft therein comprises a skirt part formed in the circumferential direction of the crankshaft and a stiffening rib provided on a wall surface of the skirt part as inclined at a predetermined degree angle to the axis of the crankshaft.

摘要翻译： 具有曲轴的发动机的曲轴箱包括沿曲轴的圆周方向形成的裙部和设置在裙部的壁面上的加强肋，该加强肋以与曲轴的轴线成预定角度倾斜。

公开(公告)号：US20070228512A1

公开(公告)日：2007-10-04

申请号：US11723925

申请日：2007-03-22

申请人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

发明人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

IPC分类号： H01L29/00

CPC分类号： H01L27/016

摘要： A thin-film device incorporates a device main body and four terminal electrodes. The device main body has four side surfaces. The terminal electrodes are disposed to touch respective portions of the side surfaces. The device main body includes a lower conductor layer used to form a first passive element and an upper conductor layer used to form a second passive element. At each side surface of the device main body, an end face of the lower conductor layer and an end face of the upper conductor layer are electrically and physically connected to each other. The terminal electrodes touch the end faces of the lower and upper conductor layers, and are thereby connected to the lower and upper conductor layers.

摘要翻译： 薄膜器件包括器件主体和四个端子电极。 装置主体具有四个侧面。 端子电极被设置成接触侧表面的相应部分。 器件主体包括用于形成第一无源元件的下导体层和用于形成第二无源元件的上导体层。 在器件主体的每个侧表面处，下导体层的端面和上导体层的端面彼此电气和物理地连接。 端子电极接触下导体层和上导体层的端面，从而连接到下导体层和上导体层。

公开(公告)号：US20070037304A1

公开(公告)日：2007-02-15

申请号：US11496399

申请日：2006-08-01

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： H01L21/00

CPC分类号： H01L21/31116 ,  H01L21/76831

摘要： In a method for manufacturing a semiconductor device, insulation resistance of the porous film is stabilized, and leakage current between adjacent interconnects provides an improved reliability in signal propagation therethrough. The method includes: sequentially forming over a semiconductor substrate a porous film and a patterned resist film; forming a concave exposed surface of the substrate; forming a non-porous film covering the interior wall of the concave portion and the porous film; selectively removing the non-porous film from the bottom of the concave portion and the non-porous film by anisotropic etch; forming a barrier metal film covering the porous film and the interior wall; and forming a metallic film on the barrier metal film to fill the concave portion. The anisotropic etch process uses an etching gas with mixing ratio MR, 45≦MR≦100, where MR=((gaseous “nitrogen” containing compound)+(inert gas))/(gaseous “fluorine” containing compound).

摘要翻译： 在制造半导体器件的方法中，多孔膜的绝缘电阻稳定，相邻互连线之间的漏电流提高了信号传播的可靠性。 该方法包括：在半导体衬底上顺序形成多孔膜和图案化抗蚀剂膜; 形成衬底的凹入的暴露表面; 形成覆盖所述凹部的内壁和所述多孔膜的无孔膜; 通过各向异性蚀刻从凹部的底部和非多孔膜选择性地去除无孔膜; 形成覆盖多孔膜和内壁的阻挡金属膜; 并在阻挡金属膜上形成金属膜以填充凹部。 各向异性蚀刻工艺使用具有混合比MR，45 <= MR <= 100的蚀刻气体，其中MR =（（含氮气体的化合物）+（惰性气体））/（气态“含氟化合物”）。