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    Nucleic acid sequences showing enhanced expression in benign neuroblastoma compared with acritical human neuroblastoma
    22.
    发明授权
    Nucleic acid sequences showing enhanced expression in benign neuroblastoma compared with acritical human neuroblastoma 有权
    与临床人神经母细胞瘤相比，在良性成神经细胞瘤中显示出增强的表达的核酸序列

    公开(公告)号：US07087383B2

    公开(公告)日：2006-08-08

    申请号：US10220891

    申请日：2001-03-02

    申请人： Akira Nakagawara

    发明人： Akira Nakagawara

    IPC分类号： C12Q1/68 ,  C07H21/04

    CPC分类号： C07K14/47

    摘要： There are disclosed a nucleic acid which is derived from the gene expressed in human neuroblastoma, and which comprises any sequence selected from the group consisting of the nucleic acid sequences set forth SEQ ID NO:1 to NO:104 in the Sequence Listing, or its complementary nucleic acid; a fragment of the nucleic acid; their use as probes or primers; and the diagnosis of neuroblastoma prognosis using any of the foregoings.

    摘要翻译： 公开了衍生自在人神经母细胞瘤中表达的基因的核酸，其包含选自序列表中SEQ ID NO：1至NO：104所示的核酸序列的任何序列，或其序列 互补核酸; 核酸的片段; 它们用作探针或引物; 并使用任何放弃诊断神经母细胞瘤预后。

    Nucleic acids isolated in neuroblastoma
    24.
    发明申请
    Nucleic acids isolated in neuroblastoma 审中-公开
    神经母细胞瘤中分离的核酸

    公开(公告)号：US20050059001A1

    公开(公告)日：2005-03-17

    申请号：US10479081

    申请日：2002-05-30

    申请人： Akira Nakagawara

    发明人： Akira Nakagawara

    IPC分类号： C07K14/47 ,  C12N15/12 ,  C12Q1/68 ,  C07H21/04 ,  C12N9/64

    CPC分类号： C07K14/47

    摘要： There are disclosed a nucleic acid whose expression is enhanced in human neuroblastoma with favorable prognosis based on comparison between human neuroblastoma with favorable prognosis and human neuroblastoma with unfavorable prognosis, the nucleic acid comprising any one of base sequences set forth in SEQ ID NO:1 to NO:366 in the Sequence Listing, a nucleic acid comprising a portion of any of those base sequences, and an isolated nucleic acid capable of hybridizing to a complementary base sequence of the foregoing under stringent conditions. It discloses gene sequences relating to favorable or unfavorable prognosis of neuroblastoma and will enable the provision of their genetic information and the diagnosis of favorable or unfavorable prognosis.

    摘要翻译： 公开了基于具有良好预后的人神经母细胞瘤与具有不利预后的人神经母细胞瘤之间的比较，具有良好预后的人神经母细胞瘤的表达增强的核酸，所述核酸包含SEQ ID NO：1至SEQ ID NO：1所示的碱基序列 序列表中的NO：366，包含任何这些碱基序列的一部分的核酸，以及在严格条件下能够与前述互补碱基序列杂交的分离的核酸。 它公开了与神经母细胞瘤有利或不利预后相关的基因序列，并且能够提供其遗传信息和诊断有利或不利的预后。

    One time programmable semiconductor nonvolatile memory device and method for production of same
    25.
    发明授权
    One time programmable semiconductor nonvolatile memory device and method for production of same 有权
    一次可编程半导体非易失性存储器件及其制造方法

    公开(公告)号：US06800527B2

    公开(公告)日：2004-10-05

    申请号：US10366564

    申请日：2003-02-14

    申请人： Yoshiaki Hagiwara ,  Hideaki Kuroda ,  Michitaka Kubota ,  Akira Nakagawara

    发明人： Yoshiaki Hagiwara ,  Hideaki Kuroda ,  Michitaka Kubota ,  Akira Nakagawara

    IPC分类号： H01L218236

    CPC分类号： G11C17/16 ,  G11C2213/33 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/112 ,  H01L2224/48091 ,  H01L2225/06568 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.

    摘要翻译： 一种提高氧化硅膜的绝缘破坏的再现性和可靠性的能够降低制造成本的半导体非易失性存储器件及其制造方法，其中以矩阵形式布置的每个存储单元具有绝缘膜破损型 保险丝，其包括形成在半导体衬底上的第一导电类型的杂质区，形成在所述半导体衬底上的第一绝缘膜，同时覆盖所述杂质区;形成在所述第一绝缘膜中的开口以到达所述杂质区;以及第一绝缘膜 第一导电类型的半导体层，第二绝缘膜和第二导电类型的第二半导体层，其从杂质区侧连续地堆叠在开口中，或者具有包含第一导电性的杂质区的绝缘膜断裂型熔丝 键入具有SOI结构的第一半导体层，第一绝缘膜 在SOI层上，到达杂质区的开口，以及层叠在开口中的第二绝缘膜和第二导电类型的第二半导体层。

    Nonvolatile semiconductor flash memory
    26.
    发明授权
    Nonvolatile semiconductor flash memory 失效
    非易失性半导体闪存

    公开(公告)号：US5561632A

    公开(公告)日：1996-10-01

    申请号：US375700

    申请日：1995-01-20

    申请人： Kenshiro Arase ,  Akira Nakagawara

    发明人： Kenshiro Arase ,  Akira Nakagawara

    IPC分类号： G06F11/00 ,  G11C16/26 ,  G11C16/34 ,  G11C29/00 ,  G11C7/00

    CPC分类号： G11C29/765 ,  G11C16/26 ,  G11C16/349 ,  G11C16/3495 ,  G11C29/82 ,  G11C29/88 ,  G06F11/076 ,  G06F2201/81

    摘要： A flash EEPROM, wherein provision is made of an auxiliary bit portion connecting nonvolatile memories in parallel with bit lines of a memory array portion and a spare row decoder for controlling addresses of a redundant memory portion, which records the cumulative number of cycles of rewriting and erasure for each word line in the nonvolatile memories, judges from the stored cumulative number of cycles if the number of cycles of a sector has reached a limit value, and, when reaching it, replaces the word line with a redundant word line so as to prolong the life of the memory even when the cumulative number of cycles of a specific word line has reached a limit value and which stores the data in accordance with different phases when the number of the data "1" or "0" is greater than or less than a predetermined number at the time of writing data and fetches the stored information based on the phase information at the time of reading data so as to reduce the drain disturbances.

    摘要翻译： 一种快闪EEPROM，其中提供了一个辅助位部分，该辅助位部分与存储器阵列部分的位线并行地连接非易失性存储器，以及备用行解码器，用于控制冗余存储器部分的地址，该冗余存储器部分记录重写循环的累积次数， 擦除非易失性存储器中的每个字线，如果扇区的周期数达到极限值，则从所存储的累积循环次数判断，并且当到达时，用冗余字线替换字线，以便 即使当特定字线的累积循环数达到极限值并且当数据“1”或“0”的数目大于或等于或等于或等于0时，根据不同的相位存储数据，也延长存储器的使用寿命 在写入数据时小于预定数量，并且在读取数据时基于相位信息取出所存储的信息，以便减少漏极干扰。

    METHOD FOR SCREENING OF THERAPEUTIC AGENT FOR CANCER
    27.
    发明申请
    METHOD FOR SCREENING OF THERAPEUTIC AGENT FOR CANCER 审中-公开
    用于筛选癌症治疗剂的方法

    公开(公告)号：US20110124006A1

    公开(公告)日：2011-05-26

    申请号：US12921015

    申请日：2009-02-27

    申请人： Akira Nakagawara ,  Atsushi Takatori

    发明人： Akira Nakagawara ,  Atsushi Takatori

    IPC分类号： G01N33/53 ,  G01N33/566 ,  C07K16/00

    CPC分类号： G01N33/574 ,  C07K16/18 ,  C07K16/2863 ,  G01N33/5011 ,  G01N2333/71 ,  G01N2500/00

    摘要： A screening method for a therapeutic agent for cancer, the method including: a step of measuring an interaction between NLRR1 and EGFR under each condition of being in the presence of a test substance and in the absence of a test substance; and a step of determining that the test substance is a therapeutic agent for cancer when the interaction between NLRR1 and EGFR in the presence of the test substance is weaker than the interaction between NLRR1 and EGFR in the absence of the test substance.

    摘要翻译： 一种癌症治疗剂的筛选方法，所述方法包括：在存在测试物质的情况下和在不存在检验物质的条件下测量NLRR1与EGFR之间的相互作用的步骤; 在测试物质存在的情况下当NLRR1和EGFR之间的相互作用弱于NLRR1和EGFR之间的相互作用时，确定测试物质是癌症治疗剂的步骤。