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公开(公告)号：US5280534A
公开(公告)日：1994-01-18
申请号：US22483
申请日：1993-02-25
申请人： Pavle Gavrilovic , Shobha Singh
发明人： Pavle Gavrilovic , Shobha Singh
摘要： A crystalline material for use in a solid state tunable laser is YAG:Mn wherein the Mn is predominantly trivalent. The laser is tunable in the yellow-orange range (0.59-0.63 .mu.m) and the near infrared range (1.04-1.2 .mu.m).
摘要翻译： 用于固态可调激光器的结晶材料是YAG：Mn，其中Mn主要是三价的。 激光可以在黄橙色范围（0.59-0.63（my）m）和近红外范围（1.04-1.2（my）m））内调节。
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公开(公告)号：US4332440A
公开(公告)日：1982-06-01
申请号：US131080
申请日：1980-03-17
CPC分类号： G02F1/1533 , G02F1/1521
摘要： Display devices are described in which certain structural features prevent cross-talk effects between individual display elements. This ensures sharp delineation between individual display elements which promotes high contrast and sharp displays. These structural features are particularly advantageous for multiplexed display systems so as to simplify circuit arrangements and ensure sharp, high-contrast displays.
摘要翻译： 描述了显示装置，其中某些结构特征防止各个显示元件之间的串扰效应。 这确保了各个显示元件之间的尖锐描绘，从而促进高对比度和尖锐的显示。 这些结构特征对于多路复用的显示系统特别有利，以便简化电路布置并确保清晰，高对比度的显示。
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公开(公告)号：US4163982A
公开(公告)日：1979-08-07
申请号：US792192
申请日：1977-04-29
IPC分类号： H01L45/00
CPC分类号： H01L45/1206 , H01L45/085 , H01L45/146
摘要： A solid state electrical switch is described which exhibits high off/on resistance ratios and low insertion loss. An additional advantage is that removal of the switching energy does not alter the status (off or on) of the switch. The active solid state material in the switch is an electrochromic material (e.g., tungsten trioxide) which undergoes a transformation from insulator to metallic conductor on injection of certain ions.
摘要翻译： 描述了一种固态电开关，其表现出高的断开/接通电阻比和低插入损耗。 另外的优点是切换能量的去除不会改变开关的状态（关闭或打开）。 开关中的活性固态材料是在注入某些离子时经历从绝缘体转变为金属导体的电致变色材料（例如三氧化钨）。
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公开(公告)号：US5166948A
公开(公告)日：1992-11-24
申请号：US718344
申请日：1991-06-19
申请人： Pavle Gavrilovic , Shobha Singh
发明人： Pavle Gavrilovic , Shobha Singh
CPC分类号： C09K11/7772 , C09K11/7771 , G02F2/02 , G06K15/1247
摘要： An up converting method and apparatus includes a crystalline structure responsive to light emitted from pump light for producing visible and/or ultraviolet light therefrom which is of a shorter wavelength than the pump light. This crystalline structure comprises a composition containing active ions of trivalent rare earth elements and a host material of either anhydrous rare earth halides or rare earth oxysulfides. This crystalline structure is represented by the atomic formula M.sub.(1-x) R.sub.x Z.sub.3 or M.sub.2(1-x) R.sub.2x O.sub.2 S where M comprises at least one rare earth element selected from the group comprising cerium, gadolinium, yttrium, lanthanum, and mixtures thereof, R is a dopant selected from the group comprising neodymium, thulium, erbium, holmium, samarium, and mixtures thereof, x is a value in the range from 0.005 to 1.0, and Z is a halogen selected from the group comprising chlorine, bromine, and iodine. When optically pumped, the crystalline structure produces visible and/or ultraviolet light by either a direct or indirect two step up conversion process. An electronic printing apparatus can also use the up converting crystalline structures to expose photosensitive media in the manner of this invention.
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公开(公告)号：US4738934A
公开(公告)日：1988-04-19
申请号：US864198
申请日：1986-05-16
申请人： Wilbur D. Johnston, Jr. , Judith A. Long , Albert T. Macrander , Bertram Schwartz , Shobha Singh
发明人： Wilbur D. Johnston, Jr. , Judith A. Long , Albert T. Macrander , Bertram Schwartz , Shobha Singh
IPC分类号： H01L27/14 , H01L21/205 , H01L21/265 , H01L21/322 , H01L21/324 , H01L21/337 , H01L21/338 , H01L27/15 , H01L29/78 , H01L29/808 , H01L29/812 , H01L31/10 , H01L21/24
CPC分类号： H01L21/26546 , H01L21/3245
摘要： Epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers make excellent substrates for III-V semiconductor devices. Particularly appealing is the low defect density obtained because of the conducting InP wafers and excellent insulating characteristics of the semi-insulating InP layer. The invention is a procedure for doping the insulating layer by ion implantation. Such a procedure is unusually advantageous for fabricating a variety of devices including MISFETs, MESFETs and JFETs.
摘要翻译： 通过MOCVD在导电InP晶片上生长的半绝缘InP的外延层为III-V半导体器件提供了优异的基板。 由于导电InP晶片获得的低缺陷密度和半绝缘InP层的优异的绝缘特性，特别吸引人。 本发明是通过离子注入来掺杂绝缘层的方法。 这种方法对于制造包括MISFET，MESFET和JFET的各种器件是非常有利的。
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公开(公告)号：US4374391A
公开(公告)日：1983-02-15
申请号：US190342
申请日：1980-09-24
IPC分类号： C03C3/064 , C03C3/089 , C23C14/10 , H01L21/314 , H01L21/316 , H01L21/56 , H01L31/0216 , C23C15/00 , H01L31/00
CPC分类号： H01L21/02271 , C03C3/064 , C03C3/089 , C23C14/10 , H01L21/02129 , H01L21/31625 , H01L21/56 , H01L31/02161 , H01L2924/0002
摘要： A fabrication technique is described for making various devices in which a type of glass is used as a surface protection layer. The glass layers are put down by particle bombardment (generally sputtering) of a borosilicate glass target. Devices with such surface layers are also described. Such glass layers are highly advantageous as encapsulating material, diffusion barrier layers, etc., particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc.
摘要翻译： 描述了一种制造技术，用于制造其中使用一种类型的玻璃作为表面保护层的各种装置。 通过硼硅酸盐玻璃靶的粒子轰击（通常是溅射）来放下玻璃层。 还描述了具有这种表面层的装置。 这样的玻璃层作为封装材料，扩散阻挡层等是非常有利的，特别是对于光学类型器件和某些半导体器件。 特别重要的是用于轰击过程中的玻璃靶的制备方法。 玻璃层是湿气稳定的，作为阻止扩散的优良屏障，并且可以在相当高的温度下使用，而不会开裂或剥落。 玻璃层还可以长期保护大气成分，包括水蒸气，氧气，大气污染物等。
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公开(公告)号：US5388114A
公开(公告)日：1995-02-07
申请号：US210037
申请日：1994-03-17
CPC分类号： H01S3/109 , G02F1/37 , H01S2302/00 , H01S3/0604 , H01S3/0627 , H01S3/1095 , H01S3/113
摘要： A diode-pumped monolithic laser is fabricated from a self-doubling host material co-doped with two ionic species, where one ionic dopant converts pump radiation to continuous radiation at a fundamental frequency and the other dopant acts as a saturable absorber to Q-switch the fundamental radiation which is then frequency doubled to produce pulsed high-intensity green light, the green light being either outputted or further frequency-doubled, into pulsed coherent UV radiation, by means of a non-linear crystal.
摘要翻译： 二极管泵浦的单片激光器由共同掺杂两种离子物质的自加倍主体材料制成，其中一个离子掺杂剂将泵浦辐射转换成基频的连续辐射，另一个掺杂剂作为Q开关的饱和吸收剂 基本辐射然后被倍频以产生脉冲高强度绿光，绿色光被输出或进一步加倍，通过非线性晶体进入脉冲相干UV辐射。
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公开(公告)号：US4245883A
公开(公告)日：1981-01-20
申请号：US973162
申请日：1978-12-26
摘要： Electrically activated components such as switches, modulators, attenuators, and mode selectors are disclosed which can be used in networks of waveguides in optical communications systems. Disclosed components comprise an electrochromic medium in combination with a suitable ion source and means for producing a variable electric field across the medium. A change of color in the medium in response to variation of the electric field strength is instrumental in influencing direction and intensity of light propagating in a network.
摘要翻译： 公开了诸如开关，调制器，衰减器和模式选择器的电激活组件，其可以用在光通信系统中的波导网络中。 公开的组分包括与合适的离子源组合的电致变色介质和用于在整个介质上产生可变电场的装置。 响应于电场强度的变化，介质中的颜色变化有助于影响在网络中传播的光的方向和强度。
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