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公开(公告)号:US10964864B2
公开(公告)日:2021-03-30
申请号:US16546046
申请日:2019-08-20
Applicant: Apple Inc.
Inventor: James Michael Perkins , Sergei Y. Yakovenko , Dmitry S. Sizov
Abstract: A light emitting structure including mixing cups are described. In an embodiment, a light emitting structure includes a light emitting diode (LED) bonded to a substrate, a diffuser layer adjacent the LED, an angular filter directly over the diffuser layer and the LED, and an overcoat layer directly over the angular filter and the LED.
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公开(公告)号:US10923626B2
公开(公告)日:2021-02-16
申请号:US16547166
申请日:2019-08-21
Applicant: Apple Inc.
Inventor: David P. Bour , Dmitry S. Sizov , Daniel A. Haeger , Xiaobin Xin
Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
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公开(公告)号:US10591774B2
公开(公告)日:2020-03-17
申请号:US15693305
申请日:2017-08-31
Applicant: Apple Inc.
Inventor: Jean-Jacques P. Drolet , Yuan Chen , Jonathan S. Steckel , Ion Bita , Dmitry S. Sizov , Chia Hsuan Tai , John T. Leonard , Lai Wang , Ove Lyngnes , Xiaobin Xin , Zhibing Ge
IPC: G02F1/1335 , G02F1/1343 , F21V8/00 , G06F3/044 , G02F1/1368 , G02F1/1333 , G06F3/041
Abstract: A display may have display layers that form an array of pixels. The display layers may include a first layer that includes a light-blocking matrix and a second layer that overlaps the first layer. The first layer may include quantum dot elements formed in openings in the light-blocking matrix. The light-blocking matrix may be formed from a reflective material such as metal. The second layer may include color filter elements that overlap corresponding quantum dot elements in the first layer. Substrate layers may be used to support the first and second layers and to support thin-film transistor circuitry that is used in controlling light transmission through the array of pixels. The display layers may include a liquid crystal layer, polarizer layers, filter layers for reflecting red and green light and/or other light to enhance light recycling, and layers with angularly dependent transmission characteristics.
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公开(公告)号:US10516081B1
公开(公告)日:2019-12-24
申请号:US15908492
申请日:2018-02-28
Applicant: Apple Inc.
Inventor: Xiaobin Xin , Dmitry S. Sizov , Andreas Bibl , Ion Bita , Yuan Chen , Lai Wang , Zhibing Ge
Abstract: Light emitting structures are described in which vertical inorganic semiconductor-based light emitting diodes (LEDs) with hexagon shaped sidewalls are mounted within corresponding circular reflective well structures. Diffuser layers may additionally laterally surround the hexagon shaped sidewalls within the circular reflective well structures.
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公开(公告)号:US10431723B2
公开(公告)日:2019-10-01
申请号:US15842603
申请日:2017-12-14
Applicant: Apple Inc.
Inventor: James Michael Perkins , Sergei Y. Yakovenko , Dmitry S. Sizov
Abstract: A light emitting structure including mixing cups are described. In an embodiment, a light emitting structure includes a light emitting diode (LED) bonded to a substrate, a diffuser layer adjacent the LED, an angular filter directly over the diffuser layer and the LED, and an overcoat layer directly over the angular filter and the LED.
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公开(公告)号:US20190115495A1
公开(公告)日:2019-04-18
申请号:US16219897
申请日:2018-12-13
Applicant: Apple Inc.
Inventor: David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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公开(公告)号:US20180097145A1
公开(公告)日:2018-04-05
申请号:US15828081
申请日:2017-11-30
Applicant: Apple Inc.
Inventor: David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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公开(公告)号:US09865772B2
公开(公告)日:2018-01-09
申请号:US15444218
申请日:2017-02-27
Applicant: Apple Inc.
Inventor: David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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公开(公告)号:US20170170360A1
公开(公告)日:2017-06-15
申请号:US15444218
申请日:2017-02-27
Applicant: Apple Inc.
Inventor: David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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