公开(公告)号：US20220220136A1

公开(公告)日：2022-07-14

申请号：US17146666

申请日：2021-01-12

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong

IPC: C07F11/00 ,  C23C16/455 ,  C23C16/18

Abstract: Dinuclear molybdenum coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a dinuclear molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20210280420A1

公开(公告)日：2021-09-09

申请号：US16807796

申请日：2020-03-03

Applicant: Applied Materials, Inc. ,  National university of Singapore

Inventor： Bhaskar Jyoti Bhuyan ,  Andrea Leoncini

IPC: H01L21/033 ,  C23C16/44 ,  C23C16/46 ,  C23C16/04 ,  C23C16/50 ,  C23C16/26 ,  C23C16/455

Abstract: Methods of forming graphene hard mask films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to an aromatic precursor to form the graphene hard mask film. The substrate comprises one or more of titanium nitride (TiN), tantalum nitride (TaN), silicon (Si), cobalt (Co), titanium (Ti), silicon dioxide (SiO2), copper (Cu), and low-k dielectric materials.

公开(公告)号：US12116376B2

公开(公告)日：2024-10-15

申请号：US18097406

申请日：2023-01-16

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong

IPC: C23C16/32 ,  C07F11/00 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/42

CPC classification number: C07F11/00 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/405 ,  C23C16/42

Abstract: Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20240279804A1

公开(公告)日：2024-08-22

申请号：US18108327

申请日：2023-02-10

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  Andrea Leoncini

IPC: C23C16/455 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/18

Abstract: Molybdenum(0) precursors and methods of forming molybdenum-containing films on a substrate surface are described. The molybdenum(0) precursors have a purity of greater than or equal to 90% molybdenum (Mo) on a molar basis. The substrate is exposed to a molybdenum(0) precursor and a reactant to form a molybdenum-containing film having greater than or equal to 80% molybdenum (Mo) on an atomic basis. In some embodiments, the molybdenum-containing film has greater than or equal to 80% molybdenum (Mo) on a molar basis. The exposures can be sequential or simultaneous.

公开(公告)号：US12060370B2

公开(公告)日：2024-08-13

申请号：US17146878

申请日：2021-01-12

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan

IPC: C07F11/00 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

CPC classification number: C07F11/00 ,  C23C16/0209 ,  C23C16/0227 ,  C23C16/0254 ,  C23C16/45527 ,  C23C16/56

Abstract: Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US11621161B2

公开(公告)日：2023-04-04

申请号：US17081482

申请日：2020-10-27

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Yong Wang ,  Andrea Leoncini ,  Doreen Wei Ying Yong ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC: H01L21/02 ,  C23C16/455

Abstract: Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film.

公开(公告)号：US11569088B2

公开(公告)日：2023-01-31

申请号：US17081498

申请日：2020-10-27

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Yong Wang ,  Andrea Leoncini ,  Doreen Wei Ying Yong ,  John Sudijono

IPC: H01L21/31 ,  H01L21/02

Abstract: Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.

公开(公告)号：US20220275012A1

公开(公告)日：2022-09-01

申请号：US17747044

申请日：2022-05-18

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong

IPC: C07F11/00 ,  C23C16/18 ,  C23C16/455

Abstract: Dinuclear molybdenum coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a dinuclear molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20220130664A1

公开(公告)日：2022-04-28

申请号：US17081482

申请日：2020-10-27

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Yong Wang ,  Andrea Leoncini ,  Doreen Wei Ying Yong ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC: H01L21/02 ,  C23C16/455

Abstract: Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film.

公开(公告)号：US20220130660A1

公开(公告)日：2022-04-28

申请号：US17081506

申请日：2020-10-27

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Yong Wang ,  Doreen Wei Ying Yong

IPC: H01L21/02 ,  H01L21/67

Abstract: Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface.