公开(公告)号：US12142477B2

公开(公告)日：2024-11-12

申请号：US18134802

申请日：2023-04-14

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US20240279804A1

公开(公告)日：2024-08-22

申请号：US18108327

申请日：2023-02-10

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  Andrea Leoncini

IPC: C23C16/455 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/18

Abstract: Molybdenum(0) precursors and methods of forming molybdenum-containing films on a substrate surface are described. The molybdenum(0) precursors have a purity of greater than or equal to 90% molybdenum (Mo) on a molar basis. The substrate is exposed to a molybdenum(0) precursor and a reactant to form a molybdenum-containing film having greater than or equal to 80% molybdenum (Mo) on an atomic basis. In some embodiments, the molybdenum-containing film has greater than or equal to 80% molybdenum (Mo) on a molar basis. The exposures can be sequential or simultaneous.

公开(公告)号：US11658025B2

公开(公告)日：2023-05-23

申请号：US17151240

申请日：2021-01-18

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/02211 ,  C23C16/345 ,  C23C16/4408 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/0228

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US11760768B2

公开(公告)日：2023-09-19

申请号：US17236020

申请日：2021-04-21

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC: C07F11/00 ,  C23C16/455 ,  C23C16/44 ,  C23C16/02 ,  C23C16/18 ,  C23C16/56

CPC classification number: C07F11/005 ,  C23C16/0272 ,  C23C16/18 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/56 ,  C23C16/0209 ,  C23C16/0227

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20230253201A1

公开(公告)日：2023-08-10

申请号：US18134802

申请日：2023-04-14

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02211 ,  H01L21/0217 ,  C23C16/4408 ,  C23C16/345 ,  C23C16/45553 ,  H01L21/0228

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US20230382933A1

公开(公告)日：2023-11-30

申请号：US18232421

申请日：2023-08-10

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC: C07F11/00 ,  C23C16/455 ,  C23C16/44 ,  C23C16/02 ,  C23C16/18 ,  C23C16/56

CPC classification number: C07F11/005 ,  C23C16/45553 ,  C23C16/4408 ,  C23C16/0272 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56 ,  C23C16/0227 ,  C23C16/0209

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20220406595A1

公开(公告)日：2022-12-22

申请号：US17355154

申请日：2021-06-22

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Doreen Wei Ying Yong ,  John Sudijono ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  Michael Haverty ,  Muthukumar Kaliappan ,  Yingqian Chen ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20220356197A1

公开(公告)日：2022-11-10

申请号：US17236020

申请日：2021-04-21

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC: C07F11/00 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56 ,  C23C16/02 ,  C23C16/44

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20220230874A1

公开(公告)日：2022-07-21

申请号：US17151240

申请日：2021-01-18

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/44

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).