公开(公告)号：US09845550B2

公开(公告)日：2017-12-19

申请号：US14613186

申请日：2015-02-03

Applicant: Applied Materials, Inc.

Inventor： Paul Brillhart ,  Anzhong Chang ,  Edric Tong ,  Kin Pong Lo ,  James Francis Mack ,  Zhiyuan Ye ,  Kartik Shah ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Satheesh Kuppurao ,  Joseph M. Ranish

IPC: C30B25/14 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

CPC classification number: C30B25/14 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67115

Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.

公开(公告)号：US20140261185A1

公开(公告)日：2014-09-18

申请号：US13846355

申请日：2013-03-18

Applicant: Applied Materials, Inc.

Inventor： STEVE ABOAGYE ,  Paul Brillhart ,  Surajit Kumar ,  Anzhong Chang ,  Satheesh Kuppurao ,  Mehmet Tugrul Samir ,  David K. Carlson

IPC: C23C16/455

CPC classification number: C23C16/45502 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45563 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/481

Abstract: Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial.

Abstract translation: 本文所述的实施例涉及用于衬底处理室中的基座环组件。 在一个实施例中，基环组件包括尺寸适于容纳在基板处理室的内圆周内的环体，环体包括用于通过基板的装载口，气体入口和气体出口，其中， 气体入口和气体出口设置在环体的相对端，并且配置成设置在环体的顶表面上的上环和被配置为设置在环体的底表面上的下环，其中， 一旦组装，上环，下环和环体大致同心或同轴。

公开(公告)号：US20130068390A1

公开(公告)日：2013-03-21

申请号：US13674421

申请日：2012-11-12

Applicant: Applied Materials, Inc.

Inventor： Errol Antonio C. SANCHEZ ,  Johanes S. Swenberg ,  David K. Carlson ,  Roison L. Doherty

IPC: H01L21/67

CPC classification number: H01L21/67017 ,  C30B25/08 ,  C30B29/06 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/31662 ,  H01L21/67028 ,  H01L21/67069 ,  Y10S438/976

Abstract: Embodiments described herein provide apparatus and methods for processing a substrate. One embodiment comprises a cleaning chamber. The cleaning chamber comprises one or more walls that form a low energy processing region, a plasma generating source to deliver electromagnetic energy to the low energy processing region, a first gas source to deliver a silicon containing gas or a germanium containing gas to the low energy processing region, a second gas source to deliver a oxidizing gas to the low energy processing region, an etching gas source to deliver a etching gas to the low energy processing region, and a substrate support having a substrate supporting surface, a biasing electrode, and a substrate support heat exchanging device to control the temperature of the substrate supporting surface.

Abstract translation: 本文描述的实施例提供了用于处理衬底的设备和方法。 一个实施例包括清洁室。 清洁室包括形成低能量处理区域的一个或多个壁，向低能量处理区域输送电磁能的等离子体发生源，将含硅气体或含锗气体输送到低能量的第一气体源 处理区域，将氧化气体输送到低能量处理区域的第二气体源，向低能量处理区域输送蚀刻气体的蚀刻气体源，以及具有基板支撑面的基板支撑体，偏置电极以及 基板支撑热交换装置，用于控制基板支撑表面的温度。