公开(公告)号：US10458040B2

公开(公告)日：2019-10-29

申请号：US15809088

申请日：2017-11-10

Applicant: Applied Materials, Inc.

Inventor： Paul Brillhart ,  Anzhong Chang ,  Edric Tong ,  Kin Pong Lo ,  James Francis Mack ,  Zhiyuan Ye ,  Kartik Shah ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Satheesh Kuppurao ,  Joseph M. Ranish

IPC: C23C16/40 ,  C30B25/14 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.

公开(公告)号：USD858192S1

公开(公告)日：2019-09-03

申请号：US29645683

申请日：2018-04-27

Applicant: Applied Materials, Inc.

Designer： Kin Pong Lo

公开(公告)号：US20140376898A1

公开(公告)日：2014-12-25

申请号：US14258410

申请日：2014-04-22

Applicant: Applied Materials, Inc.

Inventor： Kin Pong Lo ,  Paul Brillhart ,  Balasubramanian Ramachandran ,  Satheesh Kuppurao ,  Daniel Redfield ,  Joseph M. Ranish ,  James Francis Mack ,  Kailash Kiran Patalay ,  Michael Olsen ,  Eddie Feigel ,  Richard Halpin ,  Brett Vetorino

IPC: H05B3/00 ,  H01L21/67

CPC classification number: H05B3/0047 ,  H01L21/67115

Abstract: Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.

Abstract translation: 本公开的实施例一般涉及用于热处理室的反射器。 在一个实施例中，热处理室通常包括上圆顶，与上圆顶相对的下圆顶，上圆顶和下圆顶，其限定处理室的内部体积，设置在内部体积内的基板支撑件和反射器 定位在上部圆顶上方并且靠近上部圆顶，其中反射器具有沉积在面向基板支撑件的反射器的侧面上的热吸收涂层。

公开(公告)号：US12266560B2

公开(公告)日：2025-04-01

申请号：US17832775

申请日：2022-06-06

Applicant: Applied Materials, Inc.

Inventor： Kin Pong Lo ,  Vladimir Nagorny ,  Wei Liu ,  Theresa Kramer Guarini ,  Bernard L. Hwang ,  Malcolm J. Bevan ,  Jacob Abraham ,  Swayambhu Prasad Behera

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L21/67

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

公开(公告)号：US11848226B2

公开(公告)日：2023-12-19

申请号：US17183146

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu Ngo ,  Zuoming Zhu ,  Balasubramanian Ramachandran ,  Paul Brillhart ,  Edric Tong ,  Anzhong Chang ,  Kin Pong Lo ,  Kartik Shah ,  Schubert S. Chu ,  Zhepeng Cong ,  James Francis Mack ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Xuebin Li ,  Yi-Chiau Huang ,  Zhiyuan Ye

IPC: H01L21/687 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  H01L21/673 ,  C23C16/458

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785 ,  C23C16/4585

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US11380575B2

公开(公告)日：2022-07-05

申请号：US16939898

申请日：2020-07-27

Applicant: Applied Materials, Inc.

Inventor： Kin Pong Lo ,  Vladimir Nagorny ,  Wei Liu ,  Theresa Kramer Guarini ,  Bernard L. Hwang ,  Malcolm J. Bevan ,  Jacob Abraham ,  Swayambhu Prasad Behera

IPC: H01L21/687 ,  H01J37/32 ,  C23C16/458 ,  C23C16/455 ,  H01L21/67

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

公开(公告)号：US10971357B2

公开(公告)日：2021-04-06

申请号：US16152395

申请日：2018-10-04

Applicant: Applied Materials, Inc.

Inventor： Wei Liu ,  Theresa Kramer Guarini ,  Linlin Wang ,  Malcolm Bevan ,  Johanes S. Swenberg ,  Vladimir Nagorny ,  Bernard L. Hwang ,  Kin Pong Lo ,  Lara Hawrylchak ,  Rene George

IPC: H01L21/02

Abstract: A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.

公开(公告)号：US10727093B2

公开(公告)日：2020-07-28

申请号：US14645883

申请日：2015-03-12

Applicant: Applied Materials, Inc.

Inventor： Paul Brillhart ,  Joseph M. Ranish ,  Aaron Muir Hunter ,  Edric Tong ,  James Francis Mack ,  Kin Pong Lo ,  Errol Antonio C. Sanchez ,  Zhiyuan Ye ,  Anzhong Chang

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/687 ,  G02B6/08 ,  H05B3/00

Abstract: Embodiments disclosed herein relate to a light pipe structure for thermal processing of semiconductor substrates. In one embodiment, a light pipe window structure for use in a thermal process chamber includes a transparent plate, and a plurality of light pipe structures formed in a transparent material that is coupled to the transparent plate, each of the plurality of light pipe structures comprising a reflective surface and having a longitudinal axis disposed in a substantially perpendicular relation to a plane of the transparent plate.

公开(公告)号：US10930543B2

公开(公告)日：2021-02-23

申请号：US16109945

申请日：2018-08-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu Ngo ,  Zuoming Zhu ,  Balasubramanian Ramachandran ,  Paul Brillhart ,  Edric Tong ,  Anzhong Chang ,  Kin Pong Lo ,  Kartik Shah ,  Schubert S. Chu ,  Zhepeng Cong ,  James Francis Mack ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Xuebin Li ,  Yi-Chiau Huang ,  Zhiyuan Ye

IPC: H01L21/687 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  H01L21/673 ,  C23C16/458

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US10306708B2

公开(公告)日：2019-05-28

申请号：US15824489

申请日：2017-11-28

Applicant: Applied Materials, Inc.

Inventor： Kin Pong Lo ,  Paul Brillhart ,  Balasubramanian Ramachandran ,  Satheesh Kuppurao ,  Daniel Redfield ,  Joseph M. Ranish ,  James Francis Mack ,  Kailash Kiran Patalay ,  Michael Olsen ,  Eddie Feigel ,  Richard Halpin ,  Brett Vetorino

IPC: G02B5/08 ,  H05B3/00 ,  H01L21/67

Abstract: Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.